Nombre de documents

93

Sylvie Schamm-Chardon


Article dans une revue93 documents

  • F. Stumpf, A. A. Abu Quba, P. Singer, M. Rumler, Nikolay Cherkashin, et al.. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy. Journal of Applied Physics, American Institute of Physics, 2018, 123 (12), pp.125104. 〈10.1063/1.5022558〉. 〈hal-01745004〉
  • Celia Castro, Gérard Benassayag, Béatrice Pécassou, Andrea Andreozzi, Gabriele Seguini, et al.. Nanoscale control of Si nanoparticles within a 2D hexagonal array embedded in SiO2 thin films. Nanotechnology, Institute of Physics, 2017, 28 (1), 〈10.1088/0957-4484/28/1/014001〉. 〈hal-01745005〉
  • Sang Mo Yang, Lucie Mazet, M. Baris Okatan, Stephen Jesse, Gang Niu, et al.. Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy. Applied Physics Letters, American Institute of Physics, 2016, 108 (25), pp.252902 - 252902. 〈10.1063/1.4954276〉. 〈hal-01720447〉
  • Bin Han, Yasuo Shimizu, Gabriele Seguini, Elisa Arduca, Celia Castro, et al.. Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography. RSC Advances, Royal Society of Chemistry, 2016, 6 (5), pp.3617-3622. 〈10.1039/c5ra26710b〉. 〈hal-01720446〉
  • Lucie Mazet, Sang Mo Yang, Sergei Kalinin, Sylvie Schamm-Chardon, Catherine Dubourdieu. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications. Science and Technology of Advanced Materials, National Institute for Materials Science, 2015, 16 (3), pp.036005. 〈10.1088/1468-6996/16/3/036005〉. 〈hal-01489400〉
  • Lama Yaacoub, Sylvie Schamm-Chardon, N.N. Ovsyuk, Antoine Zwick, Jesse Groenen. Studying Thin Ge films and Ge/GeO2 interfaces by means of raman–brillouin scattering. Bulletin of the Russian Academy of Sciences: Physics, 2015, 79 (11), pp.1397-1401. 〈10.3103/S1062873815110246〉. 〈hal-01720450〉
  • Anna Maria Beltrán, Sébastien Duguay, Christian Strenger, Anton J Bauer, Filadelfo Cristiano, et al.. Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Solid State Communications, 2015, 221, pp.28-32. 〈10.1016/j.ssc.2015.08.017〉. 〈hal-01720451〉
  • E. Martinez, B. Saidi, M. Veillerot, P. Caubet, J.-M. Fabbri, et al.. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks. Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2015, 203, pp.1-7. 〈10.1016/j.elspec.2015.04.022〉. 〈hal-01720448〉
  • I.Z. Mitrovic, S. Hall, M. Althobaiti, D. Hesp, V.R. Dhanak, et al.. Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, American Institute of Physics, 2015, 117 (21), pp.214104. 〈10.1063/1.4922121〉. 〈hal-01720449〉
  • Lama Yaacoub, Sylvie Schamm-Chardon, N.N. Ovsyuk, Antoine Zwick, Jesse Groenen. Raman-Brillouin scattering from a thin Ge layer: Acoustic phonons for probing Ge/GeO2 interfaces. Applied Physics Letters, American Institute of Physics, 2014, 104 (6), pp.061601. 〈10.1063/1.4864790〉. 〈hal-01720453〉
  • Michele Perego, Andrea Andreozzi, Gabriele Seguini, Sylvie Schamm-Chardon, Celia Castro, et al.. Silicon crystallization in nanodot arrays organized by block copolymer lithography. Journal of Nanoparticle Research, 2014, 16 (12), 〈10.1007/s11051-014-2775-6〉. 〈hal-01718638〉
  • Lucie Mazet, Romain Bachelet, Lamis Louahadj, David Albertini, Brice Gautier, et al.. Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy. Journal of Applied Physics, American Institute of Physics, 2014, 116 (21), pp.214102. 〈10.1063/1.4902165〉. 〈hal-01489886〉
  • M. Hackenberg, P. Pichler, S. Baudot, Z. Essa, M. Gro-Jean, et al.. Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts. Microelectronic Engineering, Elsevier, 2013, 109, pp.200-203. 〈10.1016/j.mee.2013.03.071〉. 〈hal-01745012〉
  • G. Seguini, Celia Castro, Sylvie Schamm-Chardon, Gérard Benassayag, P. Pellegrino, et al.. Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon. Applied Physics Letters, American Institute of Physics, 2013, 103 (2), pp.023103. 〈10.1063/1.4813743〉. 〈hal-01745007〉
  • Paolo Pellegrino, Michele Perego, Sylvie Schamm-Chardon, Gabriele Seguini, Andrea Andreozzi, et al.. Fabrication of well-ordered arrays of silicon nanocrystals using a block copolymer mask. physica status solidi (a), Wiley, 2013, 210 (8), pp.1477-1484. 〈10.1002/pssa.201300030〉. 〈hal-01745010〉
  • P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Quantumdots for memory applications. physica status solidi (a), Wiley, 2013, 210 (8), pp.1490-1504. 〈10.1002/pssa.201300029〉. 〈hal-01745006〉
  • Celia Castro, Sylvie Schamm-Chardon, Béatrice Pécassou, A. Andreozzi, G. Seguini, et al.. In-plane organization of silicon nanocrystals embedded in SiO2 thin films. Nanotechnology, Institute of Physics, 2013, 24 (7), 〈10.1088/0957-4484/24/7/075302〉. 〈hal-01745011〉
  • R. Diaz, J. Grisolia, Gérard Benassayag, Sylvie Schamm-Chardon, Celia Castro, et al.. Extraction of the characteristics of Si nanocrystals by the charge pumping technique. Nanotechnology, Institute of Physics, 2012, 23 (8), 〈10.1088/0957-4484/23/8/085206〉. 〈hal-01745017〉
  • R. Diaz, C. Suarez, Arnaud Arbouet, Renaud Marty, Vincent Paillard, et al.. Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 272, pp.53-56. 〈10.1016/j.nimb.2011.01.031〉. 〈hal-01745016〉
  • Anna Maria Beltrán, Sylvie Schamm-Chardon, Vincent Mortet, Matthieu Lefebvre, Eléna Bedel-Pereira, et al.. Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2012, 711, pp.134-138. 〈10.4028/www.scientific.net/MSF.711.134〉. 〈hal-01745014〉
  • C. Strenger, V. Haeublein, T. Enbacher, A. J. Bauer, H. Ryssel, et al.. Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.437-440. 〈10.4028/www.scientific.net/MSF.717-720.437〉. 〈hal-01745018〉
  • Caroline Bonafos, Marzia Carrada, Gérard Benassayag, Sylvie Schamm-Chardon, Jesse Groenen, et al.. Si and Ge nanocrystals for future memory devices. Materials Science in Semiconductor Processing, Elsevier, 2012, 15 (6), pp.615-626. 〈10.1016/j.mssp.2012.09.004〉. 〈hal-01745013〉
  • Sylvie Schamm-Chardon, Pierre-Eugène Coulon, L. Lamagna, C. Wiemer, S. Baldovino, et al.. Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics. Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.419-422. 〈10.1016/j.mee.2010.10.012〉. 〈hal-01745022〉
  • C. Wiemer, S. Baldovino, L. Lamagna, M. Perego, Sylvie Schamm-Chardon, et al.. Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001). Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.415-418. 〈10.1016/j.mee.2010.10.032〉. 〈hal-01745019〉
  • G. Seguini, Sylvie Schamm-Chardon, P. Pellegrino, M. Perego. The energy band alignment of Si nanocrystals in SiO2. Applied Physics Letters, American Institute of Physics, 2011, 99 (8), pp.082107. 〈10.1063/1.3629813〉. 〈hal-01745021〉
  • Lionel Calmels, Pierre-Eugène Coulon, Sylvie Schamm-Chardon. Calculated and experimental electron energy-loss spectra of La2O3, La(OH)(3), and LaOF nanophases in high permittivity lanthanum-based oxide layers. Applied Physics Letters, American Institute of Physics, 2011, 98 (24), pp.243116. 〈10.1063/1.3600783〉. 〈hal-01745023〉
  • A. Andreozzi, L. Lamagna, G. Seguini, M. Fanciulli, Sylvie Schamm-Chardon, et al.. The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition. Nanotechnology, Institute of Physics, 2011, 22 (33), 〈10.1088/0957-4484/22/33/335303〉. 〈hal-01745020〉
  • L. Khomenkova, X. Portier, B. Sahu, A. Slaoui, Caroline Bonafos, et al.. Silicon nanoclusters embedded into oxide host for non-volatile memory applications. ECS Transactions, Electrochemical Society, Inc., 2011, 35, pp. 37-45. 〈hal-00647540〉
  • Magali Brunet, Hicham Mafhoz Kotb, Laurent Bouscayrol, Emmanuel Scheid, Michel Andrieux, et al.. Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors. Thin Solid Films, Elsevier, 2011, 519 (16), pp.5638-5644. 〈10.1016/j.tsf.2011.03.006〉. 〈hal-01443083〉
  • Caroline Bonafos, F. Gloux, Pierre-Eugène Coulon, Jesse Groenen, Sylvie Schamm-Chardon, et al.. Ultra-low energy ion implantation of Si into HfO2 and HfSiO-based structures for non volatile memory applications. Materials Research Society Symposia Proceedings, 2010, 1250, p. G01-07. 〈hal-00562346〉
  • C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, Sylvie Schamm-Chardon, et al.. Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks. Applied Physics Letters, American Institute of Physics, 2010, 96 (18), pp.182901. 〈10.1063/1.3400213〉. 〈hal-01745025〉
  • L. Lamagna, C. Wiemer, M. Perego, S. N. Volkos, S. Baldovino, et al.. O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates. Journal of Applied Physics, American Institute of Physics, 2010, 108 (8), pp.084108 〈10.1063/1.3499258〉. 〈hal-01745024〉
  • F. Delachat, Marzia Carrada, G. Ferblantier, A. Slaoui, Caroline Bonafos, et al.. Structural and optical properties of Si nanocrystals embedded in SiO2/SiNx multilayers. Physica E, 2009, pp. 994-997. 〈hal-00408918〉
  • Pierre-Eugène Coulon, K. Chan Shin Yu, Sylvie Schamm-Chardon, Gérard Benassayag, Béatrice Pécassou, et al.. Ultra-low energy ion implantation of Si into HfO2-based structures for non volatile memory applications. Materials Research Society Symposia Proceedings, 2009, 1160, pp.H01-03. 〈hal-00697605〉
  • P. Dimitrakis, A. Mouti, Caroline Bonafos, Sylvie Schamm-Chardon, Gérard Benassayag, et al.. Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications. Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. 〈10.1016/j.mee.2009.03.074〉. 〈hal-01745030〉
  • D. Tsoutsou, G. Scarel, A. Debernardi, S. C. Capelli, S. N. Volkos, et al.. Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing (vol 85, pg 2411, 2008). Microelectronic Engineering, Elsevier, 2009, 86 (10), pp.2138. 〈10.1016/j.mee.2008.09.033〉. 〈hal-01745033〉
  • D. Tsoutsou, L. Lamagna, S. N. Volkos, A. Molle, S. Baldovino, et al.. Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks. Applied Physics Letters, American Institute of Physics, 2009, 94 (5), pp.53504 - 53504. 〈10.1063/1.3075609〉. 〈hal-01745031〉
  • L. Lamagna, C. Wiemer, S. Baldovino, A. Molle, M. Perego, et al.. Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100). Applied Physics Letters, American Institute of Physics, 2009, 95 (12), pp.122902. 〈10.1063/1.3227669〉. 〈hal-01745026〉
  • Sylvie Schamm-Chardon, Pierre-Eugène Coulon, S. Miao, S. N. Volkos, L. H. Lu, et al.. Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks. Journal of The Electrochemical Society, Electrochemical Society, 2009, 156 (1), pp.H1-H6. 〈10.1149/1.3000594 〉. 〈hal-01745032〉
  • Magali Brunet, Emmanuel Scheid, Karolina Galicka-Fau, Michel Andrieux, Corinne Legros, et al.. Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materials. Microelectronic Engineering, Elsevier, 2009, 86 (10), pp.2034-2037. 〈10.1016/j.mee.2009.01.034〉. 〈hal-01443057〉
  • N. Nikolaou, P. Dimitrakis, P. Normand, Sylvie Schamm-Chardon, Caroline Bonafos, et al.. Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide-nitride-oxide dielectric stacks. Nanotechnology, Institute of Physics, 2009, 20 (30), 〈10.1088/0957-4484/20/30/305704〉. 〈hal-01745029〉
  • Karolina Galicka-Fau, Michel Andrieux, Corinne Legros, Michaële Herbst-Ghysel, Isabelle Gallet, et al.. ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices. ECS Transactions, Electrochemical Society, Inc., 2009, 25 (8), pp.1121-1128. 〈10.1149/1.3207715 〉. 〈hal-01745028〉
  • Marzia Carrada, A. Zerga, A. Amann, J.J. Grob, J.P. Stoquert, et al.. Structural and optical properties of high density Si-ncs synthezised in SiNx:H by remote PECVD and annealing. Mater. Sci. Eng. B, 2008, 147, pp.218-221. 〈hal-00250450〉
  • C. Dumas, L. Ressier, J. Grisolia, Arnaud Arbouet, Vincent Paillard, et al.. KFM detection of charges injected by AFM into a thin SiO2 layer containing Si nanocrystals. Microelectronic Engineering, Elsevier, 2008, 85 (12), pp.2358-2361. 〈10.1016/j.mee.2008.09.027〉. 〈hal-01745038〉
  • D. Tsoutsou, G. Scarel, A. Debernardi, S. C. Capelli, S. N. Volkos, et al.. Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing. Microelectronic Engineering, Elsevier, 2008, 85 (12), pp.2411-2413. 〈10.1016/j.mee.2008.09.033〉. 〈hal-01745039〉
  • Marzia Carrada, A. Zerga, A. Amann, J. J. Grob, J. P. Stoquert, et al.. Structural and optical properties of high density Si-ncs synthesized in SiNx : H by remote PECVD and annealing. Materials Science and Engineering: B, Elsevier, 2008, 147 (2-3), pp.218-221. 〈10.1016/j.mseb.2007.09.042〉. 〈hal-01745037〉
  • J. Grisolia, C. Dumas, Gérard Benassayag, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Silicon nanoparticles synthesized in SiO2 pockets by stencil-masked low energy ion implantation and thermal annealing. Superlattices and Microstructures, Elsevier, 2008, 44 (4-5), pp.395-401. 〈10.1016/j.spmi.2007.12.013〉. 〈hal-01745035〉
  • Sylvie Schamm-Chardon, Caroline Bonafos, H. Coffin, Nikolay Cherkashin, Marzia Carrada, et al.. Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS. Ultramicroscopy, Elsevier, 2008, 108 (4), pp.346--357. 〈10.1016/j.ultramic.2007.05.008〉. 〈hal-01736064〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation. Microelectronic Engineering, Elsevier, 2007, 84 (9-10), pp.1986--1989. 〈10.1016/j.mee.2007.04.068〉. 〈hal-01736069〉
  • O. Jambois, Josep Carreras, A. Perez-Rodriguez, B. Garrido, Caroline Bonafos, et al.. Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich SiO2 layers. Applied Physics Letters, American Institute of Physics, 2007, 91 (21), pp.211105 - 253124. 〈10.1063/1.2807281〉. 〈hal-01745044〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks. Applied Physics Letters, American Institute of Physics, 2007, 90 (26), pp.263513. 〈10.1063/1.2752769〉. 〈hal-01736066〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V. Em Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis. Nanotechnology, Institute of Physics, 2007, 18 (21), 〈10.1088/0957-4484/18/21/215204〉. 〈hal-01745043〉
  • C. Dumas, J. Grisolia, Gérard Benassayag, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2007, 38 (1-2), pp.80-84. 〈10.1016/j.physe.2006.12.026〉. 〈hal-01745045〉
  • D. Wu, Philippe Sciau, Sylvie Schamm-Chardon, F. Gloux, M. Varela Fernandez. Preparation and microstructures of BaTi1-xZrxO3 hetero-epitaxial thin films on SrTiO3 substrates. Journal of Physics D: Applied Physics, IOP Publishing, 2007, 40 (15), pp.4701-4706. 〈10.1088/0022-3727/40/15/052〉. 〈hal-01745042〉
  • A. Claverie, Caroline Bonafos, Gérard Benassayag, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation. Defect Diffus. Forum, 2006, 258-260, pp.531-541. 〈hal-00204809〉
  • O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, A. Perez-Rodriguez, et al.. White electroluminescence from C- and Si-rich thin silicon oxides. Applied Physics Letters, American Institute of Physics, 2006, 89 (25), pp.253124 - 253124. 〈10.1063/1.2423244〉. 〈hal-01745047〉
  • Arnaud Arbouet, Marzia Carrada, François Demangeot, Vincent Paillard, Gérard Benassayag, et al.. Photoluminescence characterization of few-nanocrystals electronic devices. Journal of Luminescence, Elsevier, 2006, 121 (2), pp.340-343. 〈10.1016/j.jlumin.2006.08.070〉. 〈hal-01745048〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag, et al.. Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers . Journal of Applied Physics, American Institute of Physics, 2006, 99 (4), pp.044302. 〈10.1063/1.2171785〉. 〈hal-01736074〉
  • J Grisolia, M Shalchian, Gérard Benassayag, H. Coffin, Caroline Bonafos, et al.. Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation. Materials Science and Engineering: B, Elsevier, 2005, 124, pp.494-498. 〈10.1016/j.mseb.2005.08.082〉. 〈hal-01745050〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Marzia Carrada, Nikolay Cherkashin, et al.. Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications. Materials Science and Engineering: B, Elsevier, 2005, 124-125, pp.499--503. 〈10.1016/j.mseb.2005.08.129〉. 〈hal-01736081〉
  • Caroline Bonafos, H. Coffin, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag, et al.. Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications. Solid-State Electronics, Elsevier, 2005, 49 (11), pp.1734--1744. 〈10.1016/j.sse.2005.10.001〉. 〈hal-01736088〉
  • Nikolay Cherkashin, Caroline Bonafos, H. Coffin, Marzia Carrada, Sylvie Schamm-Chardon, et al.. Fabrication of nanocrystal memories by ultra low energy ion implantation. physica status solidi (c), Wiley, 2005, 2 (6), pp.1907--1911. 〈10.1002/pssc.200460523〉. 〈hal-01736090〉
  • J Grisolia, M Shalchian, Gérard Benassayag, H. Coffin, Caroline Bonafos, et al.. The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation. Nanotechnology, Institute of Physics, 2005, 16 (12), pp.2987-2992. 〈10.1088/0957-4484/16/12/043〉. 〈hal-01745049〉
  • Nicolas Joffin, Bruno Caillier, Jeannette Dexpert-Ghys, Marc Verelst, Guy Baret, et al.. Elaboration by spray pyrolysis and characterization in the VUV range of phosphor particles with spherical shape and micronic size. Journal of Physics D: Applied Physics, IOP Publishing, 2005, 38 (17), pp.3261-3268. 〈10.1088/0022-3727/38/17/S30〉. 〈hal-00359209〉
  • Sylvie Schamm-Chardon, R Berjoan, P Barathieu. Study of the chemical and structural organization of SIPOS films at the nanometer scale by TEM-EELS and XPS. Materials Science and Engineering: B, Elsevier, 2004, 107 (1), pp.58-65. 〈10.1016/j.mseb.2003.10.010〉. 〈hal-01745051〉
  • T. Müller, K.-H. Heinig, W. Möller, Caroline Bonafos, H. Coffin, et al.. Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology. Applied Physics Letters, American Institute of Physics, 2004, 85 (12), pp.2373-2375. 〈hal-01736097〉
  • S. Paciornik, O. Da Fonseca Martins Gomes, Arnaud Delarue, Sylvie Schamm-Chardon, Dominique Jeulin, et al.. Multi-scale analysis of the dielectric properties and structure of resin/carbon-black nanocomposites. European Physical Journal: Applied Physics, EDP Sciences, 2003, 21, pp.17-26. 〈10.1051/epjap:2002107〉. 〈hal-00166093〉
  • V Vamvakas, D Davazoglou, R Berjoan, Sylvie Schamm-Chardon, C Vahlas. Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures. Thin Solid Films, Elsevier, 2003, 429 (1-2), pp.77-83. 〈10.1016/S0040-6090(03)00061-0〉. 〈hal-01745054〉
  • T. Müller, K.-H. Heinig, Caroline Bonafos, H. Coffin, Nikolay Cherkashin, et al.. Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology. Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. 〈10.1557/PROC-792-R8.7〉. 〈hal-01736111〉
  • Sylvie Schamm-Chardon, G. Zanchi. Study of the dielectric properties near the band gap by VEELS: gap measurement in bulk materials. Ultramicroscopy, Elsevier, 2003, 96 (3-4), pp.559-564. 〈10.1016/S0304-3991(03)00116-5〉. 〈hal-01745053〉
  • B Moine, J Mugnier, D Boyer, R Mahiou, Sylvie Schamm-Chardon, et al.. VUV absorption coefficient measurements of borate matrices. Journal of Alloys and Compounds, Elsevier, 2001, 323, pp.816-819. 〈10.1016/S0925-8388(01)01151-3〉. 〈hal-01745055〉
  • V Vamvakas, R Berjoan, Sylvie Schamm-Chardon, D Davazoglou, C Vahlas. Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures. JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3), pp.231-238. 〈10.1051/jp4:2001329〉. 〈hal-01745057〉
  • Sylvie Schamm-Chardon, G. Zanchi. Contamination and the quantitative exploitation of EELS low-loss experiments. Ultramicroscopy, Elsevier, 2001, 88 (3), pp.211-217. 〈10.1016/S0304-3991(01)00070-5〉. 〈hal-01745056〉
  • C Grigis, Sylvie Schamm-Chardon, Dominique Dorignac. High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films. Journal of Materials Research, Cambridge University Press (CUP), 1999, 14 (7), pp.2732-2738. 〈10.1557/JMR.1999.0366〉. 〈hal-01745058〉
  • C Labatut, R Berjoan, B Armas, Sylvie Schamm-Chardon, Jean Sévely, et al.. Studies of LPCVD Al–Fe–O deposits by XPS, EELS and Mössbauer spectroscopies. Surface and Coatings Technology, Elsevier, 1998, 105 (1-2), pp.31-37. 〈10.1016/S0257-8972(97)00562-8〉. 〈hal-01745059〉
  • C Grigis, Sylvie Schamm-Chardon. Element and phase identification via fine structure analysis in EELS: application to MOCVD-Y1Ba2Cu3O7-delta thin films. Ultramicroscopy, Elsevier, 1998, 74 (3), pp.159-167. 〈10.1016/S0304-3991(98)00040-0〉. 〈hal-01745060〉
  • A Bendeddouche, R Berjoan, E Beche, T Merlemejean, Sylvie Schamm-Chardon, et al.. Structural characterization of amorphous SiCxNy chemical vapor deposited coatings. Journal of Applied Physics, American Institute of Physics, 1997, 81 (9), pp.6147-6154. 〈10.1063/1.364396〉. 〈hal-01745062〉
  • Dominique Dorignac, Sylvie Schamm-Chardon, Ch. Grigis, J. Santiso, G. Garcia, et al.. HREM Characterization of Interfaces in Thin MOCVD Superconducting Films. Journal de Physique IV Colloque, 1995, 05 (C5), pp.C5-927-C5-934. 〈10.1051/jphyscol:19955110〉. 〈jpa-00253779〉
  • F. Langlais, F. Loumagne, D. Lespiaux, Sylvie Schamm-Chardon, R. Naslain. Kinetic Processes in the CVD of SiC from CH3SiCl3-H2 in a Vertical Hot-Wall Reactor. Journal de Physique IV Colloque, 1995, 05 (C5), pp.C5-105-C5-112. 〈10.1051/jphyscol:1995510〉. 〈jpa-00253766〉
  • A. Bendeddouche, R. Berjoan, E. Bêche, Sylvie Schamm-Chardon, V. Serin, et al.. SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System. Journal de Physique IV Colloque, 1995, 05 (C5), pp.C5-793-C5-800. 〈10.1051/jphyscol:1995594〉. 〈jpa-00253957〉
  • G. Garcia, J. Casado, J. Llibre, M. Doudkowski, J. Santiso, et al.. Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film. Journal de Physique IV Colloque, 1995, 05 (C5), pp.C5-439-C5-447. 〈10.1051/jphyscol:1995551〉. 〈jpa-00253913〉
  • D Lespiaux, F Langlais, R Naslain, Sylvie Schamm-Chardon, Jean Sévely. Correlations between gas phase supersaturation, nucleation process and physico-chemical characteristics of silicon carbide deposited from Si-C-H-Cl system on silica substrates. Journal of Materials Science, Springer Verlag, 1995, 30 (6), pp.1500-1510. 〈10.1007/BF00375255〉. 〈hal-01745067〉
  • F Loumagne, F Langlais, R Naslain, Sylvie Schamm-Chardon, Dominique Dorignac, et al.. Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2. Thin Solid Films, Elsevier, 1995, 254 (1-2), pp.75-82. 〈10.1016/0040-6090(94)06237-F〉. 〈hal-01745064〉
  • A Bendeddouche, R Berjoan, E Beche, Sylvie Schamm-Chardon, Virginie Serin, et al.. SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System. JOURNAL DE PHYSIQUE IV, 1995, 5 (C5), pp.793-800. 〈10.1051/jphyscol:1995594〉. 〈hal-01745065〉
  • D Lespiaux, F Langlais, R Naslain, Sylvie Schamm-Chardon, Jean Sévely. Chlorine and oxygen inhibition effects in the deposition of SiC-based ceramics from the Si-C-H-Cl system. Journal of the European Ceramic Society, Elsevier, 1995, 15 (1), pp.81-88. 〈10.1016/0955-2219(95)91303-6〉. 〈hal-01745066〉
  • G Garcia, J Casado, J Llibre, M Doudkowski, J Santiso, et al.. Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film. JOURNAL DE PHYSIQUE IV, 1995, Proceedings of the Tenth European Conference on Chemical Vapour Deposition, 5 (C5), pp.439-445. 〈10.1051/jphyscol:1995551 〉. 〈hal-01745063〉
  • J Santiso, A Figueras, Sylvie Schamm-Chardon, C Grigis, Dominique Dorignac, et al.. Y2O3 nanoprecipitates in YBCO thin films obtained by thermal- MOCVD. Physica C: Superconductivity and its Applications, Elsevier, 1994, 235, pp.619-620. 〈10.1016/0921-4534(94)91533-4〉. 〈hal-01745068〉
  • Dominique Dorignac, Sylvie Schamm-Chardon, C Grigis, Jean Sévely, J Santiso, et al.. Y2O3 nanoprecipitate/YBaCuO matrix interfaces: HREM study. Physica C: Superconductivity and its Applications, Elsevier, 1994, 235, pp.617-618. 〈10.1016/0921-4534(94)91532-6〉. 〈hal-01745069〉
  • Sylvie Schamm-Chardon, Annie Mazel, Dominique Dorignac, Jean Sévely. HREM identification of "one-dimensionally-disordered" polytypes in the SiC (CVI) matrix of SiC/SiC composites. Microscopy Microanalysis Microstructures, EDP Sciences, 1991, 2 (1), pp.59-73. 〈10.1051/mmm:019910020105900 〉. 〈hal-01745071〉
  • Sylvie Schamm-Chardon, R Fedou, Jp Rocher, Jm Quenisset, R Naslain. The K2ZrF6 wetting process: Effect of surface chemistry on the ability of a SiC-Fiber preform to be impregnated by aluminum. Metallurgical Transactions a-Physical Metallurgy and Materials Science, 1991, 22 (9), pp.2133-2139. 〈10.1007/BF02669881〉. 〈hal-01745070〉
  • Sylvie Schamm-Chardon, Y Lepetitcorps, R Naslain. Compatibility between SiC filaments and aluminim in the K2ZrF6 wetting process and its effect on filament strength. Composites Science and Technology, Elsevier, 1991, 40 (2), pp.193-211. 〈10.1016/0266-3538(91)90097-9〉. 〈hal-01745072〉
  • Sylvie Schamm-Chardon, L Rabardel, J Grannec, R Naslain, C Bernard, et al.. Partial phase diagram of the ternary reciprocal system KF-AlF3-Al2O3-K2O. Calphad, Elsevier, 1990, 14 (4), pp.385-402. 〈10.1016/0364-5916(90)90006-L〉. 〈hal-01745073〉
  • Sylvie Schamm-Chardon, Jp Rocher, R Naslain. Liquid-process production of composite-materials with aluminum-based matrix reinforced by fibers of carbon or silicon-carbide. Memoires et Etudes Scientifiques de la revue de Metallurgie, 1988, 85 (9), pp.483. 〈hal-01745074〉