Mots-clés

Nom des revues

Identifiants chercheur

Nombre de documents

133

Sylvie Schamm-Chardon


Article dans une revue94 documents

  • B. Negulescu, J. Wolfman, C. Daumont, N. Jaber, P. Andreazza, et al.. Structural and chemical investigation of interface related magnetoelectric effect in Ni/BiFe0.95Mn0.05O3 heterostructures. Applied Surface Science, Elsevier, 2019, 481, pp.234-240. 〈https://www.sciencedirect.com/science/article/pii/S0169433219305896〉. 〈10.1016/j.apsusc.2019.02.232〉. 〈hal-02070799〉
  • F. Stumpf, A. A. Abu Quba, P. Singer, M. Rumler, Nikolay Cherkashin, et al.. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy. Journal of Applied Physics, American Institute of Physics, 2018, 123 (12), pp.125104. 〈10.1063/1.5022558〉. 〈hal-01745004〉
  • Celia Castro, Gérard Benassayag, Béatrice Pécassou, Andrea Andreozzi, Gabriele Seguini, et al.. Nanoscale control of Si nanoparticles within a 2D hexagonal array embedded in SiO2 thin films. Nanotechnology, Institute of Physics, 2017, 28 (1), 〈10.1088/0957-4484/28/1/014001〉. 〈hal-01745005〉
  • Sang Mo Yang, Lucie Mazet, M. Baris Okatan, Stephen Jesse, Gang Niu, et al.. Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy. Applied Physics Letters, American Institute of Physics, 2016, 108 (25), pp.252902 - 252902. 〈10.1063/1.4954276〉. 〈hal-01720447〉
  • Bin Han, Yasuo Shimizu, Gabriele Seguini, Elisa Arduca, Celia Castro, et al.. Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography. RSC Advances, Royal Society of Chemistry, 2016, 6 (5), pp.3617-3622. 〈10.1039/c5ra26710b〉. 〈hal-01720446〉
  • Lama Yaacoub, Sylvie Schamm-Chardon, N.N. Ovsyuk, Antoine Zwick, Jesse Groenen. Studying Thin Ge films and Ge/GeO2 interfaces by means of raman–brillouin scattering. Bulletin of the Russian Academy of Sciences: Physics, 2015, 79 (11), pp.1397-1401. 〈10.3103/S1062873815110246〉. 〈hal-01720450〉
  • Anna Maria Beltrán, Sébastien Duguay, Christian Strenger, Anton J Bauer, Fuccio Cristiano, et al.. Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Solid State Communications, 2015, 221, pp.28-32. 〈10.1016/j.ssc.2015.08.017〉. 〈hal-01720451〉
  • Lucie Mazet, Sang Mo Yang, Sergei Kalinin, Sylvie Schamm-Chardon, Catherine Dubourdieu. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications. Science and Technology of Advanced Materials, National Institute for Materials Science, 2015, 16 (3), pp.036005. 〈10.1088/1468-6996/16/3/036005〉. 〈hal-01489400〉
  • I.Z. Mitrovic, S. Hall, M. Althobaiti, D. Hesp, V.R. Dhanak, et al.. Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, American Institute of Physics, 2015, 117 (21), pp.214104. 〈10.1063/1.4922121〉. 〈hal-01720449〉
  • E. Martinez, B. Saidi, M. Veillerot, P. Caubet, J.-M. Fabbri, et al.. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks. Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2015, 203, pp.1-7. 〈10.1016/j.elspec.2015.04.022〉. 〈hal-01720448〉
  • Lama Yaacoub, Sylvie Schamm-Chardon, N.N. Ovsyuk, Antoine Zwick, Jesse Groenen. Raman-Brillouin scattering from a thin Ge layer: Acoustic phonons for probing Ge/GeO2 interfaces. Applied Physics Letters, American Institute of Physics, 2014, 104 (6), pp.061601. 〈10.1063/1.4864790〉. 〈hal-01720453〉
  • Michele Perego, Andrea Andreozzi, Gabriele Seguini, Sylvie Schamm-Chardon, Celia Castro, et al.. Silicon crystallization in nanodot arrays organized by block copolymer lithography. Journal of Nanoparticle Research, 2014, 16 (12), 〈10.1007/s11051-014-2775-6〉. 〈hal-01718638〉
  • Lucie Mazet, Romain Bachelet, Lamis Louahadj, David Albertini, Brice Gautier, et al.. Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy. Journal of Applied Physics, American Institute of Physics, 2014, 116 (21), pp.214102. 〈10.1063/1.4902165〉. 〈hal-01489886〉
  • Celia Castro, Sylvie Schamm-Chardon, Béatrice Pécassou, A. Andreozzi, G. Seguini, et al.. In-plane organization of silicon nanocrystals embedded in SiO2 thin films. Nanotechnology, Institute of Physics, 2013, 24 (7), 〈10.1088/0957-4484/24/7/075302〉. 〈hal-01745011〉
  • G. Seguini, Celia Castro, Sylvie Schamm-Chardon, Gérard Benassayag, P. Pellegrino, et al.. Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon. Applied Physics Letters, American Institute of Physics, 2013, 103 (2), pp.023103. 〈10.1063/1.4813743〉. 〈hal-01745007〉
  • P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Quantumdots for memory applications. physica status solidi (a), Wiley, 2013, 210 (8), pp.1490-1504. 〈10.1002/pssa.201300029〉. 〈hal-01745006〉
  • Paolo Pellegrino, Michele Perego, Sylvie Schamm-Chardon, Gabriele Seguini, Andrea Andreozzi, et al.. Fabrication of well-ordered arrays of silicon nanocrystals using a block copolymer mask. physica status solidi (a), Wiley, 2013, 210 (8), pp.1477-1484. 〈10.1002/pssa.201300030〉. 〈hal-01745010〉
  • M. Hackenberg, P. Pichler, S. Baudot, Z. Essa, M. Gro-Jean, et al.. Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts. Microelectronic Engineering, Elsevier, 2013, 109, pp.200-203. 〈10.1016/j.mee.2013.03.071〉. 〈hal-01745012〉
  • R. Diaz, J. Grisolia, Gérard Benassayag, Sylvie Schamm-Chardon, Celia Castro, et al.. Extraction of the characteristics of Si nanocrystals by the charge pumping technique. Nanotechnology, Institute of Physics, 2012, 23 (8), 〈10.1088/0957-4484/23/8/085206〉. 〈hal-01745017〉
  • Caroline Bonafos, Marzia Carrada, Gérard Benassayag, Sylvie Schamm-Chardon, Jesse Groenen, et al.. Si and Ge nanocrystals for future memory devices. Materials Science in Semiconductor Processing, Elsevier, 2012, 15 (6), pp.615-626. 〈10.1016/j.mssp.2012.09.004〉. 〈hal-01745013〉
  • R. Diaz, C. Suarez, Arnaud Arbouet, Renaud Marty, Vincent Paillard, et al.. Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 272, pp.53-56. 〈10.1016/j.nimb.2011.01.031〉. 〈hal-01745016〉
  • Anna Maria Beltrán, Sylvie Schamm-Chardon, Vincent Mortet, Matthieu Lefebvre, Eléna Bedel-Pereira, et al.. Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2012, 711, pp.134-138. 〈10.4028/www.scientific.net/MSF.711.134〉. 〈hal-01745014〉
  • C. Strenger, V. Haeublein, T. Enbacher, A. J. Bauer, H. Ryssel, et al.. Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.437-440. 〈10.4028/www.scientific.net/MSF.717-720.437〉. 〈hal-01745018〉
  • A. Andreozzi, L. Lamagna, G. Seguini, M. Fanciulli, Sylvie Schamm-Chardon, et al.. The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition. Nanotechnology, Institute of Physics, 2011, 22 (33), 〈10.1088/0957-4484/22/33/335303〉. 〈hal-01745020〉
  • G. Seguini, Sylvie Schamm-Chardon, P. Pellegrino, M. Perego. The energy band alignment of Si nanocrystals in SiO2. Applied Physics Letters, American Institute of Physics, 2011, 99 (8), pp.082107. 〈10.1063/1.3629813〉. 〈hal-01745021〉
  • Lionel Calmels, Pierre-Eugène Coulon, Sylvie Schamm-Chardon. Calculated and experimental electron energy-loss spectra of La2O3, La(OH)(3), and LaOF nanophases in high permittivity lanthanum-based oxide layers. Applied Physics Letters, American Institute of Physics, 2011, 98 (24), pp.243116. 〈10.1063/1.3600783〉. 〈hal-01745023〉
  • L. Khomenkova, X. Portier, B. Sahu, A. Slaoui, Caroline Bonafos, et al.. Silicon nanoclusters embedded into oxide host for non-volatile memory applications. ECS Transactions, Electrochemical Society, Inc., 2011, 35, pp. 37-45. 〈hal-00647540〉
  • Sylvie Schamm-Chardon, Pierre-Eugène Coulon, L. Lamagna, C. Wiemer, S. Baldovino, et al.. Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics. Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.419-422. 〈10.1016/j.mee.2010.10.012〉. 〈hal-01745022〉
  • C. Wiemer, S. Baldovino, L. Lamagna, M. Perego, Sylvie Schamm-Chardon, et al.. Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001). Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.415-418. 〈10.1016/j.mee.2010.10.032〉. 〈hal-01745019〉
  • Magali Brunet, Hicham Mafhoz Kotb, Laurent Bouscayrol, Emmanuel Scheid, Michel Andrieux, et al.. Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors. Thin Solid Films, Elsevier, 2011, 519 (16), pp.5638-5644. 〈10.1016/j.tsf.2011.03.006〉. 〈hal-01443083〉
  • C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, Sylvie Schamm-Chardon, et al.. Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks. Applied Physics Letters, American Institute of Physics, 2010, 96 (18), pp.182901. 〈10.1063/1.3400213〉. 〈hal-01745025〉
  • Caroline Bonafos, F. Gloux, Pierre-Eugène Coulon, Jesse Groenen, Sylvie Schamm-Chardon, et al.. Ultra-low energy ion implantation of Si into HfO2 and HfSiO-based structures for non volatile memory applications. Materials Research Society Symposia Proceedings, 2010, 1250, p. G01-07. 〈hal-00562346〉
  • L. Lamagna, C. Wiemer, M. Perego, S. N. Volkos, S. Baldovino, et al.. O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates. Journal of Applied Physics, American Institute of Physics, 2010, 108 (8), pp.084108 〈10.1063/1.3499258〉. 〈hal-01745024〉
  • Pierre-Eugène Coulon, K. Chan Shin Yu, Sylvie Schamm-Chardon, Gérard Benassayag, Béatrice Pécassou, et al.. Ultra-low energy ion implantation of Si into HfO2-based structures for non volatile memory applications. Materials Research Society Symposia Proceedings, 2009, 1160, pp.H01-03. 〈hal-00697605〉
  • N. Nikolaou, P. Dimitrakis, P. Normand, Sylvie Schamm-Chardon, Caroline Bonafos, et al.. Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide-nitride-oxide dielectric stacks. Nanotechnology, Institute of Physics, 2009, 20 (30), 〈10.1088/0957-4484/20/30/305704〉. 〈hal-01745029〉
  • L. Lamagna, C. Wiemer, S. Baldovino, A. Molle, M. Perego, et al.. Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100). Applied Physics Letters, American Institute of Physics, 2009, 95 (12), pp.122902. 〈10.1063/1.3227669〉. 〈hal-01745026〉
  • D. Tsoutsou, L. Lamagna, S. N. Volkos, A. Molle, S. Baldovino, et al.. Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks. Applied Physics Letters, American Institute of Physics, 2009, 94 (5), pp.53504 - 53504. 〈10.1063/1.3075609〉. 〈hal-01745031〉
  • F. Delachat, Marzia Carrada, G. Ferblantier, A. Slaoui, Caroline Bonafos, et al.. Structural and optical properties of Si nanocrystals embedded in SiO2/SiNx multilayers. Physica E, 2009, pp. 994-997. 〈hal-00408918〉
  • Karolina Galicka-Fau, Michel Andrieux, Corinne Legros, Michaële Herbst-Ghysel, Isabelle Gallet, et al.. ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices. ECS Transactions, Electrochemical Society, Inc., 2009, 25 (8), pp.1121-1128. 〈10.1149/1.3207715 〉. 〈hal-01745028〉
  • Sylvie Schamm-Chardon, Pierre-Eugène Coulon, S. Miao, S. N. Volkos, L. H. Lu, et al.. Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks. Journal of The Electrochemical Society, Electrochemical Society, 2009, 156 (1), pp.H1-H6. 〈10.1149/1.3000594 〉. 〈hal-01745032〉
  • Magali Brunet, Emmanuel Scheid, Karolina Galicka-Fau, Michel Andrieux, Corinne Legros, et al.. Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materials. Microelectronic Engineering, Elsevier, 2009, 86 (10), pp.2034-2037. 〈10.1016/j.mee.2009.01.034〉. 〈hal-01443057〉
  • D. Tsoutsou, G. Scarel, A. Debernardi, S. C. Capelli, S. N. Volkos, et al.. Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing (vol 85, pg 2411, 2008). Microelectronic Engineering, Elsevier, 2009, 86 (10), pp.2138. 〈10.1016/j.mee.2008.09.033〉. 〈hal-01745033〉
  • P. Dimitrakis, A. Mouti, Caroline Bonafos, Sylvie Schamm-Chardon, Gérard Benassayag, et al.. Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications. Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. 〈10.1016/j.mee.2009.03.074〉. 〈hal-01745030〉
  • Marzia Carrada, A. Zerga, A. Amann, J.J. Grob, J.P. Stoquert, et al.. Structural and optical properties of high density Si-ncs synthezised in SiNx:H by remote PECVD and annealing. Mater. Sci. Eng. B, 2008, 147, pp.218-221. 〈hal-00250450〉
  • J. Grisolia, C. Dumas, Gérard Benassayag, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Silicon nanoparticles synthesized in SiO2 pockets by stencil-masked low energy ion implantation and thermal annealing. Superlattices and Microstructures, Elsevier, 2008, 44 (4-5), pp.395-401. 〈10.1016/j.spmi.2007.12.013〉. 〈hal-01745035〉
  • Marzia Carrada, A. Zerga, A. Amann, J. J. Grob, J. P. Stoquert, et al.. Structural and optical properties of high density Si-ncs synthesized in SiNx : H by remote PECVD and annealing. Materials Science and Engineering: B, Elsevier, 2008, 147 (2-3), pp.218-221. 〈10.1016/j.mseb.2007.09.042〉. 〈hal-01745037〉
  • D. Tsoutsou, G. Scarel, A. Debernardi, S. C. Capelli, S. N. Volkos, et al.. Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing. Microelectronic Engineering, Elsevier, 2008, 85 (12), pp.2411-2413. 〈10.1016/j.mee.2008.09.033〉. 〈hal-01745039〉
  • C. Dumas, L. Ressier, J. Grisolia, Arnaud Arbouet, Vincent Paillard, et al.. KFM detection of charges injected by AFM into a thin SiO2 layer containing Si nanocrystals. Microelectronic Engineering, Elsevier, 2008, 85 (12), pp.2358-2361. 〈10.1016/j.mee.2008.09.027〉. 〈hal-01745038〉
  • Sylvie Schamm-Chardon, Caroline Bonafos, H. Coffin, Nikolay Cherkashin, Marzia Carrada, et al.. Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS. Ultramicroscopy, Elsevier, 2008, 108 (4), pp.346--357. 〈10.1016/j.ultramic.2007.05.008〉. 〈hal-01736064〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V. Em Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis. Nanotechnology, Institute of Physics, 2007, 18 (21), 〈10.1088/0957-4484/18/21/215204〉. 〈hal-01745043〉
  • O. Jambois, Josep Carreras, A. Perez-Rodriguez, B. Garrido, Caroline Bonafos, et al.. Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich SiO2 layers. Applied Physics Letters, American Institute of Physics, 2007, 91 (21), pp.211105 - 253124. 〈10.1063/1.2807281〉. 〈hal-01745044〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks. Applied Physics Letters, American Institute of Physics, 2007, 90 (26), pp.263513. 〈10.1063/1.2752769〉. 〈hal-01736066〉
  • C. Dumas, J. Grisolia, Gérard Benassayag, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2007, 38 (1-2), pp.80-84. 〈10.1016/j.physe.2006.12.026〉. 〈hal-01745045〉
  • D. Wu, Philippe Sciau, Sylvie Schamm-Chardon, F. Gloux, M. Varela Fernandez. Preparation and microstructures of BaTi1-xZrxO3 hetero-epitaxial thin films on SrTiO3 substrates. Journal of Physics D: Applied Physics, IOP Publishing, 2007, 40 (15), pp.4701-4706. 〈10.1088/0022-3727/40/15/052〉. 〈hal-01745042〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation. Microelectronic Engineering, Elsevier, 2007, 84 (9-10), pp.1986--1989. 〈10.1016/j.mee.2007.04.068〉. 〈hal-01736069〉
  • A. Claverie, Caroline Bonafos, Gérard Benassayag, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation. Defect Diffus. Forum, 2006, 258-260, pp.531-541. 〈hal-00204809〉
  • O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, A. Perez-Rodriguez, et al.. White electroluminescence from C- and Si-rich thin silicon oxides. Applied Physics Letters, American Institute of Physics, 2006, 89 (25), pp.253124 - 253124. 〈10.1063/1.2423244〉. 〈hal-01745047〉
  • Arnaud Arbouet, Marzia Carrada, François Demangeot, Vincent Paillard, Gérard Benassayag, et al.. Photoluminescence characterization of few-nanocrystals electronic devices. Journal of Luminescence, Elsevier, 2006, 121 (2), pp.340-343. 〈10.1016/j.jlumin.2006.08.070〉. 〈hal-01745048〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag, et al.. Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers . Journal of Applied Physics, American Institute of Physics, 2006, 99 (4), pp.044302. 〈10.1063/1.2171785〉. 〈hal-01736074〉
  • J Grisolia, M Shalchian, Gérard Benassayag, H. Coffin, Caroline Bonafos, et al.. The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation. Nanotechnology, Institute of Physics, 2005, 16 (12), pp.2987-2992. 〈10.1088/0957-4484/16/12/043〉. 〈hal-01745049〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Marzia Carrada, Nikolay Cherkashin, et al.. Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications. Materials Science and Engineering: B, Elsevier, 2005, 124-125, pp.499--503. 〈10.1016/j.mseb.2005.08.129〉. 〈hal-01736081〉
  • J Grisolia, M Shalchian, Gérard Benassayag, H. Coffin, Caroline Bonafos, et al.. Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation. Materials Science and Engineering: B, Elsevier, 2005, 124, pp.494-498. 〈10.1016/j.mseb.2005.08.082〉. 〈hal-01745050〉
  • Nicolas Joffin, Bruno Caillier, Jeannette Dexpert-Ghys, Marc Verelst, Guy Baret, et al.. Elaboration by spray pyrolysis and characterization in the VUV range of phosphor particles with spherical shape and micronic size. Journal of Physics D: Applied Physics, IOP Publishing, 2005, 38 (17), pp.3261-3268. 〈10.1088/0022-3727/38/17/S30〉. 〈hal-00359209〉
  • Nikolay Cherkashin, Caroline Bonafos, H. Coffin, Marzia Carrada, Sylvie Schamm-Chardon, et al.. Fabrication of nanocrystal memories by ultra low energy ion implantation. physica status solidi (c), Wiley, 2005, 2 (6), pp.1907--1911. 〈10.1002/pssc.200460523〉. 〈hal-01736090〉
  • Caroline Bonafos, H. Coffin, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag, et al.. Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications. Solid-State Electronics, Elsevier, 2005, 49 (11), pp.1734--1744. 〈10.1016/j.sse.2005.10.001〉. 〈hal-01736088〉
  • T. Müller, K.-H. Heinig, W. Möller, Caroline Bonafos, H. Coffin, et al.. Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology. Applied Physics Letters, American Institute of Physics, 2004, 85 (12), pp.2373-2375. 〈hal-01736097〉
  • Sylvie Schamm-Chardon, R Berjoan, P Barathieu. Study of the chemical and structural organization of SIPOS films at the nanometer scale by TEM-EELS and XPS. Materials Science and Engineering: B, Elsevier, 2004, 107 (1), pp.58-65. 〈10.1016/j.mseb.2003.10.010〉. 〈hal-01745051〉
  • V Vamvakas, D Davazoglou, R Berjoan, Sylvie Schamm-Chardon, C Vahlas. Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures. Thin Solid Films, Elsevier, 2003, 429 (1-2), pp.77-83. 〈10.1016/S0040-6090(03)00061-0〉. 〈hal-01745054〉
  • T. Müller, K.-H. Heinig, Caroline Bonafos, H. Coffin, Nikolay Cherkashin, et al.. Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology. Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. 〈10.1557/PROC-792-R8.7〉. 〈hal-01736111〉
  • S. Paciornik, O. Da Fonseca Martins Gomes, Arnaud Delarue, Sylvie Schamm-Chardon, Dominique Jeulin, et al.. Multi-scale analysis of the dielectric properties and structure of resin/carbon-black nanocomposites. European Physical Journal: Applied Physics, EDP Sciences, 2003, 21, pp.17-26. 〈10.1051/epjap:2002107〉. 〈hal-00166093〉
  • Sylvie Schamm-Chardon, G. Zanchi. Study of the dielectric properties near the band gap by VEELS: gap measurement in bulk materials. Ultramicroscopy, Elsevier, 2003, 96 (3-4), pp.559-564. 〈10.1016/S0304-3991(03)00116-5〉. 〈hal-01745053〉
  • V Vamvakas, R Berjoan, Sylvie Schamm-Chardon, D Davazoglou, C Vahlas. Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures. JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3), pp.231-238. 〈10.1051/jp4:2001329〉. 〈hal-01745057〉
  • Sylvie Schamm-Chardon, G. Zanchi. Contamination and the quantitative exploitation of EELS low-loss experiments. Ultramicroscopy, Elsevier, 2001, 88 (3), pp.211-217. 〈10.1016/S0304-3991(01)00070-5〉. 〈hal-01745056〉
  • B Moine, J Mugnier, D Boyer, R Mahiou, Sylvie Schamm-Chardon, et al.. VUV absorption coefficient measurements of borate matrices. Journal of Alloys and Compounds, Elsevier, 2001, 323, pp.816-819. 〈10.1016/S0925-8388(01)01151-3〉. 〈hal-01745055〉
  • C Grigis, Sylvie Schamm-Chardon, Dominique Dorignac. High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films. Journal of Materials Research, Cambridge University Press (CUP), 1999, 14 (7), pp.2732-2738. 〈10.1557/JMR.1999.0366〉. 〈hal-01745058〉
  • C Labatut, R Berjoan, B Armas, Sylvie Schamm-Chardon, Jean Sévely, et al.. Studies of LPCVD Al–Fe–O deposits by XPS, EELS and Mössbauer spectroscopies. Surface and Coatings Technology, Elsevier, 1998, 105 (1-2), pp.31-37. 〈10.1016/S0257-8972(97)00562-8〉. 〈hal-01745059〉
  • C Grigis, Sylvie Schamm-Chardon. Element and phase identification via fine structure analysis in EELS: application to MOCVD-Y1Ba2Cu3O7-delta thin films. Ultramicroscopy, Elsevier, 1998, 74 (3), pp.159-167. 〈10.1016/S0304-3991(98)00040-0〉. 〈hal-01745060〉
  • A Bendeddouche, R Berjoan, E Beche, T Merlemejean, Sylvie Schamm-Chardon, et al.. Structural characterization of amorphous SiCxNy chemical vapor deposited coatings. Journal of Applied Physics, American Institute of Physics, 1997, 81 (9), pp.6147-6154. 〈10.1063/1.364396〉. 〈hal-01745062〉
  • A Bendeddouche, R Berjoan, E Beche, Sylvie Schamm-Chardon, Virginie Serin, et al.. SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System. JOURNAL DE PHYSIQUE IV, 1995, 5 (C5), pp.793-800. 〈10.1051/jphyscol:1995594〉. 〈hal-01745065〉
  • G Garcia, J Casado, J Llibre, M Doudkowski, J Santiso, et al.. Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film. JOURNAL DE PHYSIQUE IV, 1995, Proceedings of the Tenth European Conference on Chemical Vapour Deposition, 5 (C5), pp.439-445. 〈10.1051/jphyscol:1995551 〉. 〈hal-01745063〉
  • D Lespiaux, F Langlais, R Naslain, Sylvie Schamm-Chardon, Jean Sévely. Chlorine and oxygen inhibition effects in the deposition of SiC-based ceramics from the Si-C-H-Cl system. Journal of the European Ceramic Society, Elsevier, 1995, 15 (1), pp.81-88. 〈10.1016/0955-2219(95)91303-6〉. 〈hal-01745066〉
  • F. Langlais, F. Loumagne, D. Lespiaux, Sylvie Schamm-Chardon, R. Naslain. Kinetic Processes in the CVD of SiC from CH3SiCl3-H2 in a Vertical Hot-Wall Reactor. Journal de Physique IV Colloque, 1995, 05 (C5), pp.C5-105-C5-112. 〈10.1051/jphyscol:1995510〉. 〈jpa-00253766〉
  • Dominique Dorignac, Sylvie Schamm-Chardon, Ch. Grigis, J. Santiso, G. Garcia, et al.. HREM Characterization of Interfaces in Thin MOCVD Superconducting Films. Journal de Physique IV Colloque, 1995, 05 (C5), pp.C5-927-C5-934. 〈10.1051/jphyscol:19955110〉. 〈jpa-00253779〉
  • G. Garcia, J. Casado, J. Llibre, M. Doudkowski, J. Santiso, et al.. Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film. Journal de Physique IV Colloque, 1995, 05 (C5), pp.C5-439-C5-447. 〈10.1051/jphyscol:1995551〉. 〈jpa-00253913〉
  • F Loumagne, F Langlais, R Naslain, Sylvie Schamm-Chardon, Dominique Dorignac, et al.. Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2. Thin Solid Films, Elsevier, 1995, 254 (1-2), pp.75-82. 〈10.1016/0040-6090(94)06237-F〉. 〈hal-01745064〉
  • A. Bendeddouche, R. Berjoan, E. Bêche, Sylvie Schamm-Chardon, V. Serin, et al.. SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System. Journal de Physique IV Colloque, 1995, 05 (C5), pp.C5-793-C5-800. 〈10.1051/jphyscol:1995594〉. 〈jpa-00253957〉
  • D Lespiaux, F Langlais, R Naslain, Sylvie Schamm-Chardon, Jean Sévely. Correlations between gas phase supersaturation, nucleation process and physico-chemical characteristics of silicon carbide deposited from Si-C-H-Cl system on silica substrates. Journal of Materials Science, Springer Verlag, 1995, 30 (6), pp.1500-1510. 〈10.1007/BF00375255〉. 〈hal-01745067〉
  • J Santiso, A Figueras, Sylvie Schamm-Chardon, C Grigis, Dominique Dorignac, et al.. Y2O3 nanoprecipitates in YBCO thin films obtained by thermal- MOCVD. Physica C: Superconductivity and its Applications, Elsevier, 1994, 235, pp.619-620. 〈10.1016/0921-4534(94)91533-4〉. 〈hal-01745068〉
  • Dominique Dorignac, Sylvie Schamm-Chardon, C Grigis, Jean Sévely, J Santiso, et al.. Y2O3 nanoprecipitate/YBaCuO matrix interfaces: HREM study. Physica C: Superconductivity and its Applications, Elsevier, 1994, 235, pp.617-618. 〈10.1016/0921-4534(94)91532-6〉. 〈hal-01745069〉
  • Sylvie Schamm-Chardon, R Fedou, Jp Rocher, Jm Quenisset, R Naslain. The K2ZrF6 wetting process: Effect of surface chemistry on the ability of a SiC-Fiber preform to be impregnated by aluminum. Metallurgical Transactions a-Physical Metallurgy and Materials Science, 1991, 22 (9), pp.2133-2139. 〈10.1007/BF02669881〉. 〈hal-01745070〉
  • Sylvie Schamm-Chardon, Y Lepetitcorps, R Naslain. Compatibility between SiC filaments and aluminim in the K2ZrF6 wetting process and its effect on filament strength. Composites Science and Technology, Elsevier, 1991, 40 (2), pp.193-211. 〈10.1016/0266-3538(91)90097-9〉. 〈hal-01745072〉
  • Sylvie Schamm-Chardon, Annie Mazel, Dominique Dorignac, Jean Sévely. HREM identification of "one-dimensionally-disordered" polytypes in the SiC (CVI) matrix of SiC/SiC composites. Microscopy Microanalysis Microstructures, EDP Sciences, 1991, 2 (1), pp.59-73. 〈10.1051/mmm:019910020105900 〉. 〈hal-01745071〉
  • Sylvie Schamm-Chardon, L Rabardel, J Grannec, R Naslain, C Bernard, et al.. Partial phase diagram of the ternary reciprocal system KF-AlF3-Al2O3-K2O. Calphad, Elsevier, 1990, 14 (4), pp.385-402. 〈10.1016/0364-5916(90)90006-L〉. 〈hal-01745073〉
  • Sylvie Schamm-Chardon, Jp Rocher, R Naslain. Liquid-process production of composite-materials with aluminum-based matrix reinforced by fibers of carbon or silicon-carbide. Memoires et Etudes Scientifiques de la revue de Metallurgie, 1988, 85 (9), pp.483. 〈hal-01745074〉

Communication dans un congrès32 documents

  • Sylvie Schamm-Chardon. Microscopie électronique en transmission avancée pour l’étude des oxydes fonctionnels. AFC 2016 , Jul 2016, Marseille, France. 〈http://afc2016.afc.asso.fr/〉. 〈hal-01763015〉
  • Sylvie Schamm-Chardon, C. Magen, R. Guzman, Lucie Mazet, R. Cours, et al.. Strain and Cation Stoichiometry in Epitaxial BaTiO3 Thin Films Grown on Silicon. MRS 2015 Fall Meeting, Nov 2015, Boston, United States. 〈hal-01965445〉
  • Lucie Mazet, Claude Botella, R. Cours, Romain Bachelet, Guillaume Saint-Girons, et al.. Structural study of BaTiO3 films grown on Si1-xGex substrates by molecular beam epitaxy: role of passivation. MRS 2015 Fall Meeting, Nov 2015, Boston, United States. 〈hal-01965449〉
  • Catherine Dubourdieu, Lucie Mazet, S. Yang, R. Cours, Romain Bachelet, et al.. Molecular beam epitaxy of ferroelectric complex oxides on silicon. 19th Conference on "Insulating Films on Semiconductors (INFOS), 2015, Udine, Italy. 2015. 〈hal-01489594〉
  • Lucie Mazet, Romain Bachelet, Guillaume Saint-Girons, Martin Hÿtch, Sylvie Schamm-Chardon, et al.. Complex oxides on semiconductors for nanoelectronic applications. TMS 2015 144th Annual Meeting, 2015, Orlando, Fl, USA, United States. 2015. 〈hal-01489569〉
  • David Albertini, Brice Gautier, J. Jordan-Sweet, M. Frank, V. Narayanan, et al.. Epitaxy of ferroelectric complex oxides on semiconductors for field-effect devices. 10th International Conference on Physics of Advanced Materials, Sep 2014, Lasi, Romania. 2014, 〈https://www.materialstoday.com/materials-chemistry/events/10th-conference-on-physics-of-advanced-materials/〉. 〈hal-01490287〉
  • Lucie Mazet, Romain Bachelet, Guillaume Saint-Girons, Lamis Louahadj, David Albertini, et al.. Epitaxy of ferroelectric complex oxides on semiconductors for field-effect devices. 10th International Conference on Physics of Advanced Materials, Sep 2014, Iasi, Romania. 〈hal-01965375〉
  • Lucie Mazet, Romain Bachelet, Guillaume Saint-Girons, M. Yang, S. Kalinin, et al.. Epitaxial growth by molecular beam epitaxy of ferroelectric BaTiO3 on silicon. Workshop “Les oxydes pour l’optique et la photonique”, 2014, Meudon, France. 2014. 〈hal-01489873〉
  • Sylvie Schamm-Chardon, T. Denneulin, Martin Hÿtch, Lucie Mazet, Romain Bachelet, et al.. Local tetragonality of epitaxial BaTiO3 thin films on Si for ferroelectric applications. 18th international Microscopy congress, 2014, Prague, Czech Republic. 2014. 〈hal-01489876〉
  • Lucie Mazet, Romain Bachelet, Lamis Louahadj, Sylvie Schamm-Chardon, Martin Hÿtch, et al.. Epitaxial growth of BaTiO3 on Si and SOI by molecular beam epitaxy for ferroelectric applications. ISAF 2014, 2014, Penn State University in State College, PA, USA, United States. 2014. 〈hal-01489874〉
  • Lucie Mazet, Romain Bachelet, Guillaume Saint-Girons, David Albertini, Brice Gautier, et al.. Monolithic integration of epitaxial BaTiO3 on Si and SiGe for ferroelectric devices. AVS 61st International Symposium, 2014, Baltimore, USA, United States. 2014. 〈hal-01490296〉
  • Lucie Mazet, Romain Bachelet, Lamis Louahadj, Claude Botella, M. Frank, et al.. Epitaxial growth of BaTiO3 on semiconductor substrates by molecular beam epitaxy for ferroelectric devices. EMRS 2014 Fall meeting, 2014, Warsaw, Poland. 2014. 〈hal-01489916〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, P. Normand, N. Nikolaou, D. Simatos, et al.. Modifications of silicon nitride materials for SONOS memories. 2013 International Semiconductor Conference (CAS), Oct 2013, Sinaia, Romania. pp.3-10, 2013, 〈10.1109/SMICND.2013.6688073〉. 〈hal-01745076〉
  • Ana Beltran, H. Tan, Sylvie Schamm-Chardon, C. Strenger, Aj Bauer. Nano-analytical investigation of 4H-SiC interfaces. Abstract book of EDGE 2013, May 2013, Sainte Maxime, France. 〈hal-00842516〉
  • Celia Castro, A. Andreozzi, Gérard Benassayag, Ana Beltran, G. Seguini, et al.. EFTEM studies on the localization of silicon nanocrystals embedded in SiO2 for nano-devices. Proceeding of the 15th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 〈hal-00720334〉
  • Ana Beltran, Sylvie Schamm-Chardon, Vincent Mortet, Eléna Bedel-Pereira, Fuccio Cristiano, et al.. Compositional characterization of SiC-SiO2 interfaces in MOSFETs. 15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p., 2012. 〈hal-00720226〉
  • L. Khomenkova, X. Portier, B. Sahu, A. Slaoui, Caroline Bonafos, et al.. Silicon nanoclusters embedded into oxide host for non-volatile memory applications. 219th ECS Meeting, May 2011, Montreal, Canada. 〈hal-00647561〉
  • Caroline Bonafos, F. Gloux, Pierre-Eugène Coulon, Jesse Groenen, Sylvie Schamm-Chardon, et al.. Ultra-low energy ion implantation of Si into HfO2 and HfSiO-based structures for non volatile memory applications. Material Research Society (MRS) Spring Meeting, Symposium on Materials and Physics for Nonvolatile Memories II, Apr 2010, San Francisco, United States. pp.ISBN 978-1-60511-226-8, 2010. 〈hal-00590517〉
  • Pierre-Eugène Coulon, Kristel Chan Shin Yu, Sylvie Schamm-Chardon, Gérard Benassayag, Béatrice Pécassou, et al.. Ultra-Low Energy Ion Implantation of Si Into HfO(2)-Based Layers for Non Volatile Memory Applications. Symposium H – Materials and Physics for Nonvolatile Memories, Apr 2009, San Francisco, United States. 1160, pp.3-10, 2009, 〈10.1557/PROC-1160-H01-03〉. 〈hal-01745027〉
  • Régis Diaz, Carine Dumas, Jérémie Grisolia, Thierry Ondarçuhu, Sylvie Schamm-Chardon, et al.. Localized Silicon Nanocrystals Fabricated by Stencil Masked Low Energy Ion Implantation: Effect of the Stencil Aperture Size on the Implanted Dose. Symposium H – Materials and Physics for Nonvolatile Memories) , 2009, indéterminée, Unknown Region. 1160, pp.61-66, 2009, 〈10.1557/PROC-1160-H04-05〉. 〈hal-01745034〉
  • Pierre-Eugène Coulon, B.S. Sahu, Marzia Carrada, Sylvie Schamm-Chardon, Gérard Benassayag, et al.. Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications. 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009), Sep 2009, ATHENES, Greece. 〈hal-00463965〉
  • F. Delachat, Marzia Carrada, G. Ferblantier, A. Slaoui, Caroline Bonafos, et al.. Structural and optical properties of Si nanocrystals embedded in SiO2/SiNx multilayers. ScienceDirect. European Material Research Society (E-MRS) Spring Conference, Symposium on Frontiers in Silicon-Based Photonics, May 2008, STRASBOURG, France. 41, pp.994-997, 2009. 〈hal-00408922〉
  • Sandrine Lhostis, Clement Gaumer, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Crystalline Structure of HfZrO Thin Films and ZrO2 / HfO2 bi-Layers Grown by AVD for MOS Applications. ECS Transactions, 2008, Unknown, Unknown Region. The Electrochemical Society, 2008, 〈10.1149/1.2911489〉. 〈hal-01736062〉
  • Vassilios Ioannou-Sougleridis, Panagiotis Dimitrakis, Vassilios Em. Vamvakas, Pascal Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide dielectric stacks with embedded Si-nanoparticles fabricated by low-energy ion-beam-synthesis. Material Research Society 2007, Apr 2007, San Francisco, United States. 997, pp. 121-125, 2007, 〈10.1557/PROC-0997-I03-10 〉. 〈hal-01745041〉
  • Caroline Bonafos, Sylvie Schamm-Chardon, A. Mouti, P. Dimitrakis, V. Ioannou-Sougleridis, et al.. Low-Energy Ion-Beam-Synthesis of Semiconductor Nanocrystals in Very Thin High-k Layers for Memory Applications. 15th Conference on Microscopy of Semiconducting Materials, Apr 2007, Cambridge, United Kingdom. 120, pp.321-324, 2008, 〈10.1007/978-1-4020-8615-1_70〉. 〈hal-01745036〉
  • O. Jambois, A. Perez-Rodriguez, P. Pellegrino, Josep Carreras, M. Peralvarez, et al.. Electroluminescence from C- and Si- rich silicon oxides in continuous wave and pulsed excitation. 2007 Spanish Conference on Electron Devices, Jan 2007, Madrid, Spain. pp.1-4, 2007, 〈10.1109/SCED.2007.383982〉. 〈hal-01745077〉
  • Marzia Carrada, A. Zerga, A. Amann, J.J. Grob, J.P. Stoquert, et al.. Structural and optical properties of high density Si-ncs synthezised in SiNx:H by remote PECVD and annealing. European Material Research Society (E-MRS) Spring Conference, Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications, May 2007, Strasbourg, France. 〈hal-00250454〉
  • A. Claverie, Caroline Bonafos, Gérard Benassayag, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation. 2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal. 2006. 〈hal-00115744〉
  • Caroline Bonafos, Nikolay Cherkashin, Marzia Carrada, H. Coffin, Gérard Benassayag, et al.. Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. 830, pp.217-222, 2005, 〈10.1557/PROC-830-D5.2〉. 〈hal-01736091〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, M. Respaud, et al.. Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. 830, pp.281-286, 2005, 〈10.1557/PROC-830-D6.6〉. 〈hal-01736087〉
  • Nicolas Joffin, Jeannette Dexpert-Ghys, A Garcia, Marc Verelst, Sylvie Schamm-Chardon, et al.. Elaboration of phosphor particles with spherical shape and micronic size. Light sources 2004 – Tenth International Symposium on the Science and Technology of Light Sources, Institute of Physics, 2004, Bristol, United Kingdom. 182, pp. 165-166, 2004, CONFERENCE SERIES- INSTITUTE OF PHYSICS. 〈hal-01745052〉
  • Sylvie Schamm-Chardon, C Grigis, D Lessik, Jean Sévely. Study of oxygen content and dielectric function of YBCO7-delta by EELS. Electron Microscopy and Analysis Group Conference, EMAG’97, Sep 1997, Cambridge, United Kingdom. pp. 335-338, 1997, Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference. 〈10.1046/j.1365-2818.1998.0381b.x〉. 〈hal-01745061〉

Chapitre d'ouvrage5 documents

  • Sylvie Schamm-Chardon. Interdiffusion and Chemical Reaction at Interfaces by TEM/EELS. in Transmission Electron Microscopy in Micro-Nanoelectronics, Nanoscience and Nanotechnology Series, ISTE Ltd and John Wiley & Sons, Inc., UK, pp. 135-163, 2013, 〈10.1002/9781118579022.ch6〉. 〈hal-01745009〉
  • Alain Claverie, Caroline Bonafos, Robert Carles, Sylvie Schamm-Chardon, Arnaud Arbouet, et al.. Synthesis and Packaging of Nanocrystals by Ultra Low Energy Ion Implantation for Applications in Electronics, Optics and Plasmonics. Synthesis and Engineering of Nanostructures by Energetic Ions, Nova Science, Chap. 9, pp. 153-172, 2011. 〈hprints-01745455〉
  • Sylvie Schamm-Chardon, Giovanna Scarel, Marco Fanciulli. Local structure, composition and electronic properties of rare earth oxide thin films studied using advanced transmission electron microscopy techniques (TEM-EELS). Rare Earth Oxide Thin Films: Growth Characterization and Applications, 106, pp.153-177, 2007, 〈10.1007/11499893_11〉. 〈hal-01745046〉
  • C. Dumas, J. Grisolia, Marzia Carrada, Arnaud Arbouet, Vincent Paillard, et al.. Photoluminescence spectroscopy and transport electrical measurements reveal the quantized features of Si nanocrystals embedded in an ultra thin SiO2 layer. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 2, 4, pp.311-315, 2007, 〈10.1002/pssc.200673272〉. 〈hal-01745040〉
  • J. Caro, M. Doudkowsky, A. Figueras, J. Praxedas, G. Garcia, et al.. Morphological and Structural Aspects of Thin Films Prepared by Vapor Deposition. Handbook of Surfaces and Interfaces of Materials, Elsevier, Vol. 4, Chap. 4, pp. 229-280, 2001, 〈10.1016/B978-012513910-6/50050-5〉. 〈hprints-01745420〉

Thèse1 document

  • Sylvie Schamm-Chardon. Sur l'élaboration des composites SiC/Al par le procédé au K2ZrF6 bases physico-chimiques et incidence sur la résistance des fibres. Matériaux. Université Sciences et Technologies - Bordeaux I, 1989. Français. 〈tel-00374529〉

Direction d'ouvrage, Proceedings, Dossier1 document

  • Michele Perego, Sylvie Schamm-Chardon, Paolo Pellegrino. Organized Nanostructures and Nano-objects : Fabrication, characterization and applications - Preface. France. 210 (8), pp.1476, 2013, 〈10.1002/pssa.201370052 〉. 〈hal-01745008〉