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Number of documents

8

Sylvie Schamm-Chardon


712580   

Journal articles8 documents

  • C. Wiemer, S. Baldovino, L. Lamagna, M. Perego, Sylvie Schamm-Chardon, et al.. Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001). Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.415-418. ⟨10.1016/j.mee.2010.10.032⟩. ⟨hal-01745019⟩
  • Sylvie Schamm-Chardon, Pierre-Eugène Coulon, L. Lamagna, C. Wiemer, S. Baldovino, et al.. Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics. Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.419-422. ⟨10.1016/j.mee.2010.10.012⟩. ⟨hal-01745022⟩
  • C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, Sylvie Schamm-Chardon, et al.. Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks. Applied Physics Letters, American Institute of Physics, 2010, 96 (18), pp.182901. ⟨10.1063/1.3400213⟩. ⟨hal-01745025⟩
  • L. Lamagna, C. Wiemer, M. Perego, S. N. Volkos, S. Baldovino, et al.. O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates. Journal of Applied Physics, American Institute of Physics, 2010, 108 (8), pp.084108. ⟨10.1063/1.3499258⟩. ⟨hal-01745024⟩
  • L. Lamagna, C. Wiemer, S. Baldovino, A. Molle, M. Perego, et al.. Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100). Applied Physics Letters, American Institute of Physics, 2009, 95 (12), pp.122902. ⟨10.1063/1.3227669⟩. ⟨hal-01745026⟩
  • D. Tsoutsou, L. Lamagna, S. N. Volkos, A. Molle, S. Baldovino, et al.. Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks. Applied Physics Letters, American Institute of Physics, 2009, 94 (5), pp.53504 - 53504. ⟨10.1063/1.3075609⟩. ⟨hal-01745031⟩
  • Sylvie Schamm-Chardon, Pierre-Eugène Coulon, S. Miao, S. N. Volkos, L. H. Lu, et al.. Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks. Journal of The Electrochemical Society, Electrochemical Society, 2009, 156 (1), pp.H1-H6. ⟨10.1149/1.3000594⟩. ⟨hal-01745032⟩
  • D. Tsoutsou, G. Scarel, A. Debernardi, S. C. Capelli, S. N. Volkos, et al.. Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing. Microelectronic Engineering, Elsevier, 2008, 85 (12), pp.2411-2413. ⟨10.1016/j.mee.2008.09.033⟩. ⟨hal-01745039⟩