Co-auteurs

Réseaux sociaux

Nombre de documents

169

Chargé de recherche CNRS


Article dans une revue48 documents

  • Meriem Bouchilaoun, Ali Soltani, Ahmed Chakroun, Abdelatif Jaouad, Maxime Darnon, et al.. A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching. physica status solidi (a), Wiley, 2018, pp.1700658. 〈10.1002/pssa.201700658〉. 〈hal-01760514〉
  • Mathieu De Lafontaine, Maxime Darnon, Clément Colin, Boussairi Bouzazi, Maité Volatier, et al.. Impact of Via Hole Integration on Multijunction Solar Cells for Through Cell Via Contacts and Associated Passivation Treatment. IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 7 (5), pp.1456 - 1461. 〈10.1109/JPHOTOV.2017.2711423〉. 〈hal-01760501〉
  • Bruno Lee Sang, Marie-Josée Gour, Maxime Darnon, Serge Ecoffey, Abdelatif Jaouad, et al.. Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2016, 34 (2), 〈10.1116/1.4936885〉. 〈hal-01701405〉
  • Odile Mourey, Camille Petit-Etienne, Gilles Cunge, Maxime Darnon, Emilie Despiau-Pujo, et al.. Roughness generation during Si etching in Cl 2 pulsed plasma. Journal of Vacuum Science and Technology A, American Vacuum Society, 2016, 34 (4), 〈10.1116/1.4951694〉. 〈hal-01881982〉
  • G. Cunge, Maxime Darnon, J Dubois, P. Bézard, O Mourey, et al.. Measuring ion velocity distribution functions through high-aspect ratio holes in inductively coupled plasmas. Applied Physics Letters, American Institute of Physics, 2016, 108, pp.93109 - 32108. 〈10.1063/1.4942892〉. 〈hal-01865123〉
  • M. Haass., M. Darnon., G. Cunge., O Joubert., D. Gahan.. Silicon etching in a pulsed HBr/O−2 plasma. I. Ion flux and energy analysis.. Journal of Vacuum Science and Technology B, 2015, 33 (3). 〈hal-01878009〉
  • Moritz Haass, M. Darnon, Gilles Cunge, Olivier Joubert. Silicon etching in a pulsed HBr/O−2 plasma. II. Pattern transfer. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures / Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structure; Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures;, American Vacuum Society (AVS), 2015, 12 (118). 〈hal-01878012〉
  • Maxime Darnon, Mathieu De Lafontaine, Maité Volatier, Simon Fafard, Richard Arès, et al.. Deep germanium etching using time multiplexed plasma etching. Journal of Vacuum Science and Technology B, 2015, 33, pp.060605. 〈10.1116/1.4936112〉. 〈hal-01916768〉
  • Maxime Darnon, Névine Rochat, Christophe Licitra. Modification of porous SiOCH by first contact with water vapor after plasma process. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2015, 33 (6), pp.061205. 〈10.1116/1.4932533〉. 〈hal-01916773〉
  • Maxime Darnon, Gilles Cunge, Nicholas St J Braithwaite. Time-resolved ion flux, electron temperature and plasma density measurements in a pulsed Ar plasma using a capacitively coupled planar probe. Plasma Sources Science and Technology, IOP Publishing, 2014, 23 (2), 〈10.1088/0963-0252/23/2/025002〉. 〈hal-01798624〉
  • Emilie Despiau-Pujo, Melisa Brihoum, Paul Bodart, M Darnon, Gilles Cunge. Pulsed Cl2/Ar inductively coupled plasma processing: 0D model versus experiments. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (45), pp.16276 - 16282. 〈10.1088/0022-3727/47/45/455201〉. 〈hal-01798618〉
  • K. Lionti, W. Volksen, T. Magbitang, Maxime Darnon, G. Dubois. Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage. ECS Journal of Solid State Science and Technology, 2014, 4 (1), pp.N3071 - N3083. 〈10.1149/2.0081501jss〉. 〈hal-01916807〉
  • R. Blanc, F. Leverd, Maxime Darnon, G. Cunge, S. David, et al.. Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas. J. Vac. Sci. Technol, 2014, B 32 ,, pp.021807. 〈10.1116/1.4867357〉. 〈hal-00968799〉
  • E. Despiau-Pujo, M. Brihoum, P. Bodart, M. Darnon, G. Cunge. Pulsed Cl2/Ar inductively coupled plasmas processing: 0D model vs. experiments. J. Phys. D: Appl. Phys, 2014, 47, pp.455201. 〈hal-01798423〉
  • C. Petit-Etienne, Maxime Darnon, P. Bodart, M. Fouchier, G. Cunge, et al.. Atomic-scale silicon etching control using pulsed Cl2 plasma. J. Vac. Sci. Technol, 2013, pp.B 31, 011201. 〈10.1116/1.4768717〉. 〈hal-00777318〉
  • R.L. Bruce, S. Engelmann, S. Purushothaman, W. Volksen, T.J. Frot, et al.. Investigation of plasma etch damage to porous oxycarbosilane ultra low- k dielectric. Journal of Physics D: Applied Physics, IOP Publishing, 2013, 46(26), pp.265303. 〈10.1088/0022-3727/46/26/265303〉. 〈hal-00860913〉
  • Maxime Darnon, C. Licitra, N. Rochat, J. Zocco, T. Chevolleau. Analysis of water adsorption in plasma-damaged porous low-k dielectric by controlled-atmosphere infrared spectroscopy. J. Vac. Sci. Technol, 2013, pp.B 31(6). 〈10.1116/1.4827252〉. 〈hal-00925515〉
  • Maxime Darnon, N. Casiez, T. Chevolleau, G. Dubois, W. Volksen, et al.. Impact of low-k structure and porosity on etch processes. Journal of Vacuum Science and Technology B, 2013, pp.B 31, 011207. 〈10.1116/1.4770505〉. 〈hal-00808847〉
  • M. Brihoum, G. Cunge, Maxime Darnon, D. Gahan, O. Joubert, et al.. Ion flux and ion distribution function measurements in synchronously pulsed inductively coupled plasmas. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2013, A 31(2), pp.020604. 〈10.1116/1.4790364〉. 〈hal-00860915〉
  • C. Petit-Etienne, Maxime Darnon, P. Bodart, M. Fouchier, G. Cunge, et al.. Atomic-scale silicon etching control using pulsed Cl-2 plasma. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 2013, 31 Issue: 1, pp.011201. 〈10.1116/1.47687〉. 〈hal-00944924〉
  • Willi Volksen, Sampath Purushothaman, Maxime Darnon, Mike Lofaro, Stephan Cohen, et al.. Integration of a manufacturing grade, k = 2.0 spin-on material in a single damascene structure. ECS J. Solid State Sci. Technol,, 2012, 1 (5), pp.N85-N90. 〈10.1149/2.013205jss〉. 〈hal-00808848〉
  • M. Haass, Maxime Darnon, O. Joubert. Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis. Journal of Applied Physics, American Institute of Physics, 2012, pp.111- 124905. 〈hal-00755597〉
  • C. Petit-Etienne, E. Pargon, S. David, Maxime Darnon, L. Vallier, et al.. Silicon recess minimization during gate patterning using synchronous plasma pulsing. J. Vac. Sci. Technol, 2012, pp.B 30, 040604. 〈10.1116/1.4737125〉. 〈hal-00777317〉
  • S. Banna, A. Ankargul, G. Cunge, Maxime Darnon, E. Pargon, et al.. Pulsed high-density plasmas for advanced dry etching processes. Journal of Vacuum Science and Technology A, American Vacuum Society, 2012, pp.A 30(4). 〈hal-00808849〉
  • S. Banna, A. Agarwal, T. Lill, G. Cunge, Maxime Darnon, et al.. Critical Review: Pulsed High-Density Plasmas for Advanced Dry Etching Processes. Journal of Vacuum Science and Technology A, American Vacuum Society, 2012, pp.30, 040801. 〈10.1116/1.4716176〉. 〈hal-00808668〉
  • N. Posseme, T. David, T. Chevolleau, Maxime Darnon, F. Bailly, et al.. Study of Porous SiOCH Patterning Using Metallic Hard Mask: Challenges and Solutions. ECS Transactions, Electrochemical Society, Inc., 2011, pp.35 (4), 667-685. 〈hal-00629313〉
  • C. Licitra, T. Chevolleau, R. Bouyssou, M. El Kodadi, G. Haberfehlner, et al.. Development of Porosimetry Techniques for the Characterization of Plasma-Treated Porous Ultra Low-K Materials. ECS Transactions, Electrochemical Society, Inc., 2011. 〈hal-00625361〉
  • F. Bailly, T. David, T. Chevolleau, Maxime Darnon, N. Posseme, et al.. Roughening of porous SiCOH materials in fluorocarbon plasmas. Journal of Applied Physics, American Institute of Physics, 2011, pp.108, June 2010, 014906. 〈hal-00625289〉
  • C. Petit-Etienne, Maxime Darnon, L. Vallier, E. Pargon, G. Cunge, et al.. Etching mechanisms of thin SiO2 exposed to Cl2 plasma. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2011, B 29(5), Sep/Oct 2011. 〈hal-00629230〉
  • T. David, N. Posseme, Maxime Darnon, T. Chevolleau. Porous SiOCH Integration: Etch Challenges With a Metallic Hard Mask Approach. Future Fab Intl, 2011, pp.Volume 37. 〈hal-00647490〉
  • N. Posseme, R. Bouyssou, T. Chevolleau, T. David, V. Arnal, et al.. Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions. Vac. Sci. Technol., 2011, pp.B 29 (1), Jan/Feb 2011, 011018. 〈hal-00625286〉
  • F. Bailly, T. David, T. Chevolleau, Maxime Darnon, N. Posseme, et al.. Roughening of porous SiCOH materials in fluorocarbon plasmas. Journal of Applied Physics, American Institute of Physics, 2010, 108 (1), pp.014906. 〈10.1063/1.3446820〉. 〈hal-00848955〉
  • C. Petit-Etienne, Maxime Darnon, L. Vallier, E. Pargon, G. Cunge, et al.. Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2010, doi: 10.1116/1.3483165, pp.B 28, (2010), 926-935. 〈hal-00623374〉
  • Maxime Darnon, C. Petit-Etienne, E. Pargon, G. Cunge, L. Vallier, et al.. Synchronous Pulsed Plasma for Silicon Etch Applications. ECS Trans, 2010, pp.27 (1), 717-723. 〈hal-00625292〉
  • Maxime Darnon, T. Chevolleau, T. David, J. Ducote, N. Posseme, et al.. Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2010, B28 (1), pp 149-156. 〈hal-00461126〉
  • M. Guillorn, J. Chang, N. Fuller, J. Patel, Maxime Darnon, et al.. Hydrogen Silsesquioxane-Based Hybrid Electron Beam And Optical Lithography For High Density Circuit Prototyping. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2009, B, 27(6), Nov/Dec 2009, pp 2568-2592. 〈hal-00461129〉
  • S. Demuynck, H. Kim, C. Huffman, Maxime Darnon, H. .Struyf, et al.. Dielectric Reliability of 50nm Half Pitch Structures in Aurora® LK. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2009, 48, April 2009, 04C018. 〈hal-00625298〉
  • Maxime Darnon, T. Chevolleau, D. Eon, R. Bouyssou, B. Pelissier, et al.. Patterning of narrow porous SiOCH trenches using a TiN hard mask. Microelectronic Engineering, Elsevier, 2008, pp.85, (2008) 2226-2235. 〈hal-00387506〉
  • Maxime Darnon, T. Chevolleau, T. David, N. Posseme, J. Ducote, et al.. Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2008, pp.B 26, 1964-1970. 〈hal-00385675〉
  • C. Licitra, F. Bertin, Maxime Darnon, T. Chevolleau, C. Guedj, et al.. Evaluation of Ellipsometric porosimetry for in-line characterization of ultra-low-k dielectrics. physica status solidi (c), Wiley, 2008, 5 (5), pp 1278-1282. 〈hal-00461584〉
  • C. Licitra, F. Bertin, Maxime Darnon, T. Chevolleau, C. Guedj, et al.. Evaluation of ellipsometric porosimetry for in-line characterization of ultra low-k dielectrics. Physica Status Solidi, 2008, pp.5, 1278 (2008). 〈hal-00387517〉
  • N. Posseme, T. Chevolleau, T. David, Maxime Darnon, J.P. Barnes, et al.. Efficiency of reducing and oxidizing ash plasmas in preventing metallic barrier diffusion into porous SiOCH. Microelectronic Engineering, Elsevier, 2008, 85, pp.1842-1849. 〈hal-00387514〉
  • T. Chevolleau, Maxime Darnon, T. David, N. Posseme, J. Torres, et al.. Analysis of chamber wall coatings during the patterning of ultralow-k materials with a metal hard mask: Consequences on cleaning strategies. Journal of Vacuum Science and Technology B, 2007, Vol 25, pp. 886-892. 〈hal-00461587〉
  • Maxime Darnon, T. Chevolleau, O. Joubert, S. Maitrejean, J.C. Barbe, et al.. Undulation of sub-100 nm porous dielectric structures: A mechanical analysis. Applied Physics Letters, American Institute of Physics, 2007, pp.91. 〈hal-00397092〉
  • N. Posseme, T. Chevolleau, T. David, Maxime Darnon, O. Louveau, et al.. Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas in high-density plasmas. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2007, pp.B 25, (2007) 1928-1940. 〈hal-00397094〉
  • D. Eon, Maxime Darnon, T. Chevolleau, T. David, L. Vallier, et al.. Etch mechanisms of hybrid low-k material (SiOCH with porogen) in fluorocarbon based plasma. J. Vac Sc. Technol., 2007, pp.B 25, (2007), 715-720. 〈hal-00397077〉
  • Maxime Darnon, T. Chevolleau, D. Eon, L. Vallier, J. Torres, et al.. Etching characteristics of TiN used as hard mask in dielectric etch process. J. Vac. Sc. Technol., 2006, B 24, pp.2262-2270. 〈hal-00397064〉
  • E. Pargon, Maxime Darnon, O. Joubert, T. Chevolleau, L. Vallier, et al.. Towards a controlled patterning of 10 nm silicon gates in high density plasmas. Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2005, B 23, pp.1913-1923. 〈hal-00397042〉

Communication dans un congrès111 documents

  • Clément Laucher, Maxime Darnon, Clément Colin, Mathieu De Lafontaine, Franck Melul, et al.. Permanent bonding process for III-V/Ge multijunction solar cell integration. 14TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-14), Apr 2018, Puertollano, Spain. 2012, pp.090004, 2018, AIP Conference Proceedings. 〈10.1063/1.5053542〉. 〈hal-01877145〉
  • Maxime Darnon, Gerard Laguna, Montse Vilarrubí, Álvaro Fernández, Gonzalo Sisó, et al.. Dense array CPV receivers: Impact of the cooling device on the net PV output for different illumination profiles. 14TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-14), Apr 2018, Puertollano, Spain. 2012, pp.080008, 2018, AIP conference proceedings. 〈10.1063/1.5053536〉. 〈hal-01877143〉
  • Maxime Darnon, Maxime Godard, Dominique Drouin, Serge Martel, Clément Fortin. Plasma Treatment for Fluxless Flip-Chip Chip-Joining Process. 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, United States. IEEE, 〈10.1109/ECTC.2018.00069〉. 〈hal-01870584〉
  • Pierre Albert, Abdelatif Jaouad, Maxime Darnon, Yannick Deshayes, Laurent Bechou, et al.. Submillimeter Multijunction Solar Cells: Impact of Dimension, Design and Architecture on Electrical Performances. 13th International conference on Concentrator Photovoltaic Systems (CPV 13), May 2017, Otawa, Canada. 〈hal-01716137〉
  • G. Cunge., M. Darnon., J Dubois., P Bezard., O Mourey., et al.. Measuring IVDF through high−aspect holes in ICP plasmas. PESM 2015 (Plasma Etch and Strip in Microtechnology), 2015, Louvain, Belgium. 〈hal-01878112〉
  • G. Cunge, M Darnon, J Dubois, P. Bézard, O. Mourey, et al.. Measuring IVDF through high-aspect holes in pulsed ICP plasma. 68th Gaseous Electronics Conference (GEC), Oct 2015, Honolulu, United States. 〈hal-01878046〉
  • E. Despiau-Pujo, G. Cunge, M Darnon, N. Sadeghi, N Braithwaite. Producing ion waves from acoustic pressure waves in pulsed ICP: Modelling vs. Experiments. 68th Gaseous Electronics Conference (GEC), Oct 2015, Honolulu, United States. 〈hal-01878115〉
  • G. Cunge., M. Darnon., J Dubois., P Bezard., O Mourey., et al.. Measuring IVDF through high−aspect holes in pulsed ICP plasmas. 68th GEC / ICRP−9, Oct 2015, Honolulu, United States. 〈hal-01878113〉
  • E. Despiau-Pujo, G. Cunge, M Darnon, N. Sadeghi, Ns Braithwaite. Producing ion waves from acoustic pressure waves in pulsed ICP: Modelling vs. Experiments. 68th Gaseous Electronics Conference (GEC), Oct 2015, Honolulu, United States. 〈hal-01878049〉
  • G. Cunge., M. Darnon., J Dubois., P Bezard., O Mourey., et al.. RFEA analyzers to measure IVDF through high−aspect holes in pulsed ICP plasmas. Frontiers in Low Temperature Plasma Diagnostics XI, 2015, Porquerolles, France. 〈hal-01878109〉
  • Qinghuang Lin, Sebastian Engelmann, Ying Zhang, E. Dupuy, E. Pargon, et al.. Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach. SPIE Advanced Lithography, 2015, San Jose, France. 〈10.1117/12.2085812〉. 〈hal-01869175〉
  • P. Brichon, E. Despiau-Pujo, O Mourey, C. Petit-Etienne, M Darnon, et al.. MD simulations of chlorine plasmas interaction with ultrathin Si films for advanced etch processes. 2014 Silicon Nanoelectronics Workshop (SNW), Jun 2014, Honolulu (USA), United States. 〈hal-01798393〉
  • E. Despiau-Pujo, M. Brihoum, G. Cunge, M Darnon, N Braithwaite, et al.. Pulsed ICP plasmas processing: 0D Model vs. Experiments. Plasma Etch and Strip in Microelectronics (PESM), 6th International Workshop, May 2014, grenoble, France. 〈hal-01798532〉
  • E. Despiau-Pujo, M. Brihoum, G. Cunge, M. Darnon, N. Braithwaite, et al.. Pulsed Cl2/Ar ICP plasmas processing : 0D Model vs. Experiments. Plasma Etch and Strip in Microelectronics (PESM), May 2014, grenoble, France. 〈hal-01798564〉
  • E. Despiau-Pujo, M. Brihoum, G. Cunge, M Darnon, N Braithwaite, et al.. Pulsed Cl2/Ar ICP plasmas processing : 0D Model vs. Experiments. Plasma Etch and Strip in Microelectronics (PESM), May 2014, grenoble, France. 〈hal-01798407〉
  • C. Chanson, E. Pargon, M. Darnon, . C Petit Etienne, M. Foucher, et al.. Reactor wall plasma cleaning processes after InP etching in Cl2/CH4/Ar ICP discharge. Plasma Etch and Strip in Microelectronics (PESM), 7th International Workshop, May 2014, grenoble, France. 〈hal-01798099〉
  • G. Cunge, E. Despiau-Pujo, M Darnon, Ns Braithwaite, N. Sadeghi, et al.. Producing ion waves from acoustic pressure waves in pulsed inductive plasmas. Plasma Etch and Strip in Microelectronics (PESM), May 2014, Grenoble (France), France. 〈hal-01798411〉
  • Odile Mourey, C. Petit-Etienne, G. Cunge, M. Darnon, E. Despiau-Pujo, et al.. Silicon etching using CW, synchronized pulsed and bias pulsed Cl2 plasma. AVS 2014, , 2014, Baltimore, United States. 〈hal-01798348〉
  • P. Brichon, E. Despiau-Pujo, O Mourey, C. Petit-Etienne, G. Cunge, et al.. MD simulations of Cl2 plasmas interaction with ultrathin Si films for advanced etch processes”. Plasma Etch and Strip in Microelectronics (PESM), May 2014, Grenoble (France), France. 〈hal-01798396〉
  • P. Brichon, E. Despiau-Pujo, O Mourey, C. Petit-Etienne, G. Cunge, et al.. MD simulations of chlorine plasmas interaction with ultrathin silicon films for advanced etch processes.. Plasma Etch and Strip in Microelectronics (PESM), 6th International Workshop, May 2014, grenoble, France. 〈hal-01798524〉
  • Maxime Darnon, G. Cunge, C. Petit-Etienne, M. Haass, P. Bodart, et al.. Pulsed plasmas for etching in microelectronics. Journées du réseau plasma froids, 2013, La Rochelle, France. 〈hal-00925769〉
  • Maxime Darnon, M. Haass, M. Brihoum, G. Cunge, S. Banna, et al.. Pulsed plasmas: from plasma parameters to pattern transfer. Plasma Etch and Strip in Microtechnologies conference, 2013, leuven, Belgium. 〈hal-00860925〉
  • R. Blanc, Maxime Darnon, G. Cunge, E. Latu-Romain, F. Leverd, et al.. Si3N4 spacers etching in synchronized pulsed CH3F/O2/He/SiF4 plasmas. AVS 60h international symposium, Oct 2013, Long Beach, United States. 〈hal-00925775〉
  • Maxime Darnon, G. Cunge, C. Petit Etienne, E. Pargon, L. Vallier, et al.. Pulsed plasmas for etching at the nanoscale. Journées Nationales des Technologies Émergentes, May 2013, Evian les bains, France. 〈hal-00860922〉
  • G. Cunge, Maxime Darnon, M. Brihoum, E. Despiau-Pujo, A. Davydova, et al.. Optical and Electrical Diagnostics of Pulsed Plasmas Etching Processes. AVS 60h international symposium, Oct 2013, Long Beach, United States. 〈hal-00925763〉
  • E. Despiau-Pujo, M. Brihoum, G. Cunge, Maxime Darnon, N.S. Braithwaite, et al.. Pulsed ICP chlorine plasmas : Numerical simulations versus Experiments. 4th Workshop on Radio Frequency Discharges, May 2013, giens, France. 〈hal-00860934〉
  • E. Despiau-Pujo, M. Brihoum, G. Cunge, Maxime Darnon, N. Braithwaite, et al.. Pulsed plasma processing: A combined modelling and experimental study. 31st International Conference on Phenomena in Ionized Gases (ICPIG), Jul 2013, Granada, Spain. 〈hal-00904428〉
  • P. Brichon, E. Despiau-Pujo, G. Cunge, Maxime Darnon, O. Joubert. MD Simulations of Pulsed Chlorine Plasmas Interaction with Ultrathin Silicon Films for Advanced Etch Processes. American Vacuum Society 60th International Symposium, Oct 2013, Long beach, United States. 〈hal-00904431〉
  • G. Cunge, M. Brihoum, Maxime Darnon, E. Despiau-Pujo, A. Davydova, et al.. Time-resolved Optical and Electrical Diagnostics of Pulsed Plasmas Etching. American Vacuum Society 60th International Symposium, Oct 2013, Long beach, United States. 〈hal-00904432〉
  • Maxime Darnon, M. Haass, G. Cunge, O. Joubert, S. Banna. Characterization of silicon etching in synchronized pulsed plasma. SPIE, 2013, United States. pp.86850J, 2013, 〈10.1117/12.2011462〉. 〈hal-00860917〉
  • P. Brichon, E. Despiau-Pujo, G. Cunge, Maxime Darnon, O. Joubert. MD simulations of chlorine plasmas interaction with ultrathin silicon films for advanced etch processes. AVS 2013, Oct 2013, Long beach, United States. 〈hal-00919179〉
  • E. Despiau-Pujo, M. Brihoum, G. Cunge, Maxime Darnon, N.S. Braithwaite, et al.. Pulsed ICP plasmas processing : A combined modelling and experimental study. 31st International Conference on Phenomena in Ionized Gases (ICPIG), Jul 2013, Granada, Spain. 〈hal-00925794〉
  • O. Joubert, Maxime Darnon, G. Cunge, E. Pargon, T. David, et al.. Towards new plasma technologies for 22 nm gate etch processes and beyond. SPIE Advanced Lithography, 2012, San Jose, United States. 8328, pp.83280D, 2012, 〈10.1117/12.920312〉. 〈hal-00808682〉
  • T. Chevolleau, Maxime Darnon, N. Posseme, T. David, R. Bouyssou, et al.. Plasmas Processes Challenges for Porous SiCOH Integration in Advanced Interconnects. Materials Research Society spring meeting, Apr 2012, San francisco, United States. 〈hal-00808861〉
  • T. Chevolleau, G. Cunge, X. Chevalier, R. Tiron, Maxime Darnon, et al.. Self assembly patterning using block copolymer for advanced CMOS technology. Plasma Etch and Strip in Microelectronics conference, 2012, Grenoble, France. 〈hal-00808857〉
  • M. Haass, Maxime Darnon, E. Pargon, C. Petit-Etienne, L. Vallier, et al.. Analysis of Passivation Layer Composition and Thickness on Silicon Patterns Etched by Synchronously Pulsed Plasmas. 5th Plasma Etch and Strip in Microelectronics Workshop (PESM), Mar 2012, Grenoble, France. 〈hal-00755594〉
  • T. Chevolleau, G. Cunge, M. Delalande, X. Chevalier, R. Tiron, et al.. Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process. SPIE, 2012, United States. Volume: 8328 Pages: 83280M (6 pp.), 2012, 〈10.1117/12.91639〉. 〈hal-00808850〉
  • G. Cunge, Maxime Darnon, N. Braithwaite, E. Despiau-Pujo, P. Bodart, et al.. Time resolved ion flux measurement in pulsed ICP plasmas. Tampa, Oct 2012, Tampa, United States. 〈hal-00762123〉
  • O. Joubert, Maxime Darnon, G. Cunge, E. Pargon, T. David, et al.. Towards new plasma technologies for 22nm gate etch processes and beyond. SPIE-AL, 2012, San Jose, CA, United States. 〈hal-00808670〉
  • O. Joubert, N. Posseme, T. Chevolleau, T. David, Maxime Darnon. Low-k integration using metallic hard masks. UCPSS, 2012, Ghent, Belgium. 187, pp.195, 193-195, 2012, 〈10.4028/www.scientific.net/SSP.187.193〉. 〈hal-00925747〉
  • G. Cunge, P. Bodart, M. Brihoum, M. Haas, Maxime Darnon, et al.. Time-resolved diagnostics of reactive pulsed plasmas by absorption spectroscopy, modulated beam Mass spectrometry, ion flux probes and RFEA analyzers. First Pulsed Plasma Diagnostics Workshop (PPDW), 2012, dublin, Ireland. 〈hal-00808856〉
  • R. Blanc, F. Leverd, Maxime Darnon, S. David, T. David, et al.. Investigation of synchronized pulsed plasmas for highly selective etching of Si3N4 spacers. Pacific Rim Meeting of the Electrochemical and Solid State Society (PRiME), 2012, Hawai, United States. 〈hal-00808854〉
  • T. Chevolleau, G. Cunge, M. Delalande, X. Chevalier, R. Tiron, et al.. Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process. SPIE-AL, 2012, San Jose, CA, United States. 〈hal-00808863〉
  • G. Cunge, P. Bodart, M. Brihoum, M. Haas, Maxime Darnon, et al.. Time-resolved diagnostics of pulsed plasma etching processes. 1st pulsed plasma diagnostic workshop, Sep 2012, Dublin, Ireland. 〈hal-00808669〉
  • P. Bodart, G. Cunge, C. Petit-Etienne, Maxime Darnon, M. Haass, et al.. SiCl4/Cl2 plasmas: a new chemistry to etch high-k material selectively to Si-based Alloys. Plasma Etch and Strip in Microelectronics conference, 2012, Grenoble, France. 〈hal-00808860〉
  • Maxime Darnon, T. Chevolleau, T. David, N. Posseme, R. Bouyssou, et al.. Plasma Etching for Back End Of Line Applications. China Semiconductor Technology International Conference (CSTIC), Mar 2012, Shanghaï, China. 〈hal-00808862〉
  • T. Chevolleau, G. Cunge, M. Delalande, X. Chevalier, R. Tiron, et al.. Self assembly patterning using block copolymer for advanced CMOS Technology : optimisation of plasma etching processes. SPIE, 2012, United States. 8328, pp.83280M, 2012, 〈10.1117/12.916399〉. 〈hal-00944979〉
  • Nicolas Possémé, Thibaut David, Thierry Chevolleau, Maxime Darnon, Philippe Brun, et al.. Porous SiOCH integration: Etch challenges with a trench first metal hard mask approach. Chinese Semiconductor Technology International Conference (CSTIC), Mar 2011, Shanghaï, China. ECS Transactions, 34 (1), pp.389-394, 〈10.1149/1.3567609〉. 〈hal-00625347〉
  • N. Posseme, T. David, T. Chevolleau, Maxime Darnon, F. Bailly, et al.. Porous SiCOH Patterning for Advanced Interconnects: Challenges and Solutions. Electrochem. 219th Soc. Meeting, 2011, Montreal, Canada. 〈hal-00625357〉
  • M. Haass, Maxime Darnon, G. Cunge, P. Bodart, C. Petit-Etienne, et al.. Impact of Synchronized Plasma Pulsing Technologies on Key Parameters Governing STI Etch Processes. AVS 58h international symposium, Oct 2011, Nashville, United States. 〈hal-00647636〉
  • Maxime Darnon, T. Chevolleau, T. David, N. Posseme, R. Bouyssou, et al.. Impact of ambient atmosphere on plasma-damaged porous low-k characterization. IEEE International Interconnect Technology Conference / Materials for Advanced Metallization, May 2011, Dresde, Germany. 〈hal-00647635〉
  • S. Banna, A. Agarwal, T. Lill, Maxime Darnon, G. Cunge, et al.. Time-Modulation of High density Plasmas for Advanced Dry Etching Processes. 4th Plasma Etch and Strip in Microelectronics Workshop, May 2011, Mechelen, Belgium. 〈hal-00647608〉
  • G. Cunge, P. Bodart, M. Brihoum, M. Fouchier, Maxime Darnon, et al.. Time-resolved diagnostics of pulsed plasmas by UV and VUV absorption spectroscopy and by modulated beam Mass spectrometry. 64th Gaseous Electronic Conference, 2011, Salt lake city, United States. 〈hal-00647602〉
  • G. Cunge, P. Bodart, M. Brihoum, M. Fouchier, Maxime Darnon, et al.. Diagnostics of reactive pulsed plasmas by UV and VUV absorption spectroscopy and by modulated beam Mass spectrometry. IX workshop on frontiers in low temperature plasma diagnostics, 2011, zinowitz, Germany. 〈hal-00641436〉
  • R. Hurand, Maxime Darnon, T. Chevolleau, D. Fuard, F. Bailly, et al.. Characterization of Plasma-Induced Damages on low-k during Interconnection Integration by Scatterometric Porosimetry. AVS 58h international symposium, Oct 2011, Nashville, United States. 〈hal-00647640〉
  • Maxime Darnon, P. Bodart, M. Haass, C. Petit-Etienne, M. Brihoum, et al.. Etch processes with pulsed plasmas for advanced CMOS technologies. 3rd International Conference on Microelectronics and Plasma Technology, Jul 2011, Dalian, China. 〈hal-00647643〉
  • P. Bodart, C. Petit-Etienne, G. Cunge, F. Boulard, L. Vallier, et al.. HfO2 etching by pulsed BCl3/Ar plasma. 4th PESM workshop, May 2011, Belgium. 〈hal-00641438〉
  • T. Lill, O. Joubert, Maxime Darnon, S. Banna, A. Agarwal. Angstrom Level Resolution Etch. China Semiconductor Technology International Conference (CSTIC), Mar 2011, Shanghaï, China. 〈hal-00625350〉
  • R. Hurand, R. Bouyssou, Maxime Darnon, C. Tiphine, C. Licitra, et al.. Scatterometric Porosimetry for porous low-k patterns characterization. Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM), May 2011, Dresde, Germany. 〈hal-00647417〉
  • O. Joubert, Maxime Darnon, G. Cunge, E. Pargon, L. Vallier, et al.. Interest of synchronized pulsed plasmas for next CMOS technologies. China Semiconductor Technology International Conference (CSTIC) 2011, Mar 2011, Shanghaï, China. 〈hal-00625345〉
  • Maxime Darnon, M. Haass, P. Bodart, G. Cunge, C. Petit-Etienne, et al.. Improving Etch Processes by Using Pulsed Plasmas. AVS 58h international symposium, Oct 2011, Nashville, United States. 〈hal-00647630〉
  • O. Joubert, N. Possémé, T. David, T. Chevolleau, Maxime Darnon. Low k Integration Using Metallic Hard Masks. Materials Research Society spring meeting (MRS) 2011, Apr 2011, San Francisco, United States. 〈hal-00647612〉
  • G. Cunge, P. Bodart, M. Brihoum, M. Fouchier, Maxime Darnon, et al.. Time-resolved diagnostics of pulsed HBr and Cl2 plasmas. 64rd Gaseous Electronics Conference, Nov 2011, Salt Lake City, United States. 〈hal-00944932〉
  • Maxime Darnon, T. Chevolleau, N. Possémé, T. David, O. Joubert. Challenges of porous SiCOH dielectric material integration for advanced interconnect technology nodes. CMOS Emerging Technologies, Jun 2011, Whistler, Canada. 〈hal-00647646〉
  • Maxime Darnon, T. Chevolleau, T. David, N. Posseme, R. Bouyssou, et al.. Characterizing plasma-damaged porous low-k. 4th Plasma Etch and Strip in Microelectronics Workshop, May 2011, Mechelen, Belgium. 〈hal-00647611〉
  • Maxime Darnon, T. Chevolleau, T. David, N. Posseme, R. Bouyssou, et al.. Characterizing Plasma Induced Damage to Ultra Low-k. China Semiconductor Technology International Conference (CSTIC), Mar 2011, Shanghaï, China. 〈hal-00625356〉
  • T. Chevolleau, N. Posseme, T. David, R. Bouyssou, J. Ducote, et al.. Plasma Etching Process Scalability and challenges for ULK Materials. IITC 2010, Jun 2010, Burlingame USA., United States. 〈hal-00623452〉
  • M. Haass, Maxime Darnon, E. Pargon, C. Petit-Etienne, L. Vallier, et al.. Synchronous Plasma Pulsing For Etch Applications. AVS 57th international symposium, Oct 2010, Albuquerque, United States. 〈hal-00625368〉
  • E. Pargon, G. Cunge, Maxime Darnon, L. Vallier, P. Bodart, et al.. Plasma etching processes for nanoCMOS and nanoelectronics devices. Minatech upstream crossroad, 2010, Grenoble, France. 〈hal-00643917〉
  • Maxime Darnon, C. Petit-Etienne, F. Boulard, E. Pargon, L. Vallier, et al.. Reduction of Plasma Induced Silicon-Recess During Gate Over-Etch Using Synchronous Pulsed Plasmas. AVS 57th international symposium, Oct 2010, Albuquerque, United States. 〈hal-00625366〉
  • T. Chevolleau, N. Posseme, T. David, R. Bouyssou, J. Ducote, et al.. Etching Process Scalability and Challenges for ULK Materials. Proceeding of IEEE International Interconnect Technology Conference, IITC, Jun 2010, DRESDE, Germany. 〈hal-00625314〉
  • O. Joubert, E. Pargon, G. Cunge, Maxime Darnon, L. Vallier, et al.. Challenges and future prospects in plasma etching processes. 3rd International Conference on PLAsma NanoTechnology and Science, Mar 2010, Nagoya,, Japan. 〈hal-00625378〉
  • W. Volksen, G. Dubois, T. Magbitang, V. Lee, R.D. Miller, et al.. Molecularly Reinforced Sol-gel Glasses: Preparation, Characterization and Integration Studies. Material Research Society Spring Meeting, Nov 2010, United States. 〈hal-00625377〉
  • G. Cunge, E. Pargon, Maxime Darnon, L. Vallier, P. Bodart, et al.. Pulsed plasma for nanoCMOS and nanoelectronic device elaboration. The Second International Symposium on Plasma Nanoscience (iPlasmaNano-II), Dec 2010, Sydney, Australia. 〈hal-00643911〉
  • S. Engelmann, S. Purushothaman, T.J. Frot, Maxime Darnon, M. Lofaro, et al.. Challenges in sub-100 nm Dual Damascene Etch of Porous Oxycarbosilane Ultra Low-k Dielectrics for BEOL Integration. AVS 57th international symposium, Oct 2010, Albuquerque, United States. 〈hal-00625371〉
  • Maxime Darnon, C. Petit-Etienne, E. Pargon, G. Cunge, L. Vallier, et al.. Synchronous Plasma Pulsing for silicon Etch Applications. China Semiconductor Technology International Conference (CSTIC), 2010, Shangai, China. 〈hal-00643921〉
  • N. Posseme, T. Chevolleau, T. David, Maxime Darnon, F. Bailly, et al.. Plasma Processes Challenges for Porous SiOCH Patterning in Advanced Interconnects. AVS 57th international symposium, 2010, Albuquerque, United States. 〈hal-00625365〉
  • M. Haass, Maxime Darnon, E. Pargon, G. Cunge, S. Banna, et al.. Synchronized pulsed plasmas: potential process improvements for patterning technologies. 63rd Gaseous Electronic Conference and 7th International Conference on Reactive Plasmas, Oct 2010, Paris, France. 〈hal-00625370〉
  • R. Bouyssou, T. Chevolleau, M. El Kodadi, M. Besacier, N. Possémé, et al.. Sidewall Modification of Porous SiOCH Induced by Etching and Post Etching Plasma Treatments. 3rd Plasma Etch and Strip in Microelectronics Workshop, Mar 2010, Grenoble, France. 〈hal-00625382〉
  • E. Pargon, G. Cunge, Maxime Darnon, L. Vallier, P. Bodart, et al.. Pulsed plasmas for nanoCMOS and nanoelectronics devices elaboration. 2nd International Conference on Plasma Nanoscience (iPlasma Nano-II), 2010, Bateman's Bay, Australia. 〈hal-00944937〉
  • Maxime Darnon, C. Petit-Etienne, E. Pargon, G. Cunge, L. Vallier, et al.. Synchronous Plasma Pulsing for Etch Applications. China Semiconductor Technology International Conference (CSTIC), Mar 2010, Shanghaï, China. 〈hal-00647616〉
  • P. Bodart, C. Petit-Etienne, G. Cunge, L. Vallier, Maxime Darnon, et al.. Plasma Pulsing for Atomic Layer Etching Application. 3rd Plasma Etch and Strip in Microelectronics Workshop, Mar 2010, Grenoble, France. 〈hal-00625384〉
  • M. Guillorn, J. Chang, N. Fuller, J. Patel, J. Ott, et al.. Hydrogen Silsesquioxane-Based Hybrid Electron Beam And Optical Lithography For High Density CMOS Prototyping. 53rd Iinternational Conference on Electron, Ion, and Photon Beam Technology & Nanoffabrication, 2009, United States. 〈hal-00461591〉
  • S. Banna, A. Agarwal, V. Todorow, S. Rauf, K. Ramaswamy, et al.. Inductively-Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Advanced Gate Etching. AVS 56th international symposium, Nov 2009, San José, United States. 〈hal-00461590〉
  • M. Guillorn, J. Chang, A. Pyzyna, S. Engelmann, E. Joseph, et al.. Trigate 6T SRAM scaling to 0.06 μm2. Proceeding of 2009 International Electron Devices Meeting, IEDM 2009, Dec 2009, San Francisco, United States. 〈hal-00625310〉
  • T. Chevolleau, T. David, N. Posseme, Maxime Darnon, F. Bailly, et al.. Plasma Etching Challenges for Porous SiOCH Integration in Advanced Interconnect Levels. 30th Symposium on Dry Process (DPS), 2008, tokyo, Japan. 〈hal-00397846〉
  • Maxime Darnon, D. Neumayer, G. Gibson, Y. Zhang. Deposition and Etching of Hexagonal and Cubic Boron Nitride. AVS 55th international symposium, October 2008, 2008, United States. 〈hal-00461592〉
  • T. Chevolleau, T. David, N. Posseme, Maxime Darnon, F. Bailly, et al.. Plasma challenges of porous SiOCH patterning for advanced interconnect levels. 55th American Vacuum Society Symposium, 2008, boston, United States. 〈hal-00397847〉
  • T. Chevolleau, Maxime Darnon, T. David, N. Posseme, J. Torres, et al.. Chamber Walls Coatings during hard mask patterning of Ultra Low-k Materials: Consequences on Cleaning Strategies. AVS 54th international symposium, 2007, United States. 〈hal-00461594〉
  • T. Chevolleau, Maxime Darnon, T. David, D. Perret, J. Torres, et al.. Metallic versus Organic Hard Mask Strategies for Advanced Dielectric Trenches Patterning. Proceeding of DPS, Symposium on Dry Process, 2007, tokyo, Japan. 〈hal-00399993〉
  • A. Lagha, L. Broussous, D. Pepper, C. Maurice, N. Cabuil, et al.. Comprehensive study of metal-fluoride crystals issues with trench first hard mask back end architecture. Surface Preparation and Cleaning Conference, 2007, United States. 〈hal-00461607〉
  • Maxime Darnon, T. Chevolleau, N. Posseme, T. David, C. Licitra, et al.. Porous SiOCH Modification by O2, NH3 and CH4 plasmas Used as ashing and Pore sealing Steps. Proceeding of PESM, Plasma Etch and Strip in Microelectronics (Workshop), 2007, leuven, Belgium. 〈hal-00398871〉
  • C. Licitra, Maxime Darnon, T. Chevolleau, S. Cetre, H. Fontaine, et al.. Evaluation of ellipsometric porosimetry for in-line characterization of low- dielectrics. ISCE, 4th International Conference on Spectroscopic Ellipsometry, 2007, stockolm, Sweden. 〈hal-00398872〉
  • T. Chevolleau, Maxime Darnon, T. David, N. Posseme, O. Joubert. Chamber Walls Coatings During Patterning of Dielectric Damascene Structures With a Metallic Hard Mask: Consequences on Cleaning Strategies. Proceeding of PESM, Plasma Etch and Strip in Microelectronics (Workshop), 2007, leuven, Belgium. 〈hal-00398870〉
  • Maxime Darnon, T. Chevolleau, L. Vallier, J. Torres, O. Joubert. Ash Plasma Exposure of Hybrid Material (SiOCH and porogen): Comparisaon with Porous SiOCH. AVS 54th, 2007, United States. 〈hal-00461593〉
  • Maxime Darnon, T. Chevolleau, T. David, L. Vallier, J. Torres, et al.. Ash plasma exposure of hybrid material (SiOCH and porogen). 54th International AVS symposium, 2007, seattle, United States. 〈hal-00400650〉
  • T. Chevolleau, Maxime Darnon, T. David, N. Posseme, O. Joubert. Chamber walls coating during patterning of dielectric damascene structures with a metal hard mask: consequence on cleaning strategies. Plasma Etch and Strip in Microelectronics Workshop, 2007, United States. 〈hal-00461598〉
  • Maxime Darnon, T. Chevolleau, T. David, D. Perret, J. Torres, et al.. Dielectric Trenches Patterning: Metallic Vs Organic Hard Mask. Proceeding of MAM, Metal Advanced Metallization (Workshop), 2007, bruges, Belgium. 〈hal-00398866〉
  • L. Vallier, T. Chevolleau, O. Joubert, Maxime Darnon, D. Eon, et al.. Challenges of Plasma Processes for Advanced ULK Patterning. Materials for Advanced Metallization 2006 Conference (MAM 2006), 2006, grenoble, France. 〈hal-00397760〉
  • Maxime Darnon, T. Chevolleau, N. Posseme, T. David, L. Vallier, et al.. Critical Dimensions Control of Narrow Low-k Trenches. Materials for Advanced Metallization, 2006, grenoble, France. 〈hal-00461614〉
  • T. Chevolleau, D. Eon, Maxime Darnon, T. David, L. Vallier, et al.. Patterning of narrow SiOCH trenches using the late porogen removal process. AVS, 53rd International AVS Symposium, 2006, san francisco, United States. 〈hal-00400477〉
  • Maxime Darnon, T. Chevolleau, D. Eon, F. Bailly, B. Pelissier, et al.. Profile control and sidewall modifications of narrow porous ULK trenches after plasma etching and pore sealing treatments. AVS, 53rd International AVS Symposium, 2006, san francisco, United States. 〈hal-00400479〉
  • F. Bailly, T. David, A. Jacquier, Maxime Darnon, Christophe Cardinaud. Material Modifications and Surface Roughness during Porous SiOCH Etching Processes. AVS 53rd international symposium, 2006, United States. 〈hal-00461612〉
  • T. Chevolleau, G. Cunge, Maxime Darnon, R. Ramos, L. Vallier, et al.. Emerging Application of Fluorocarbon Plasmas for Integrated Circuits Fabrication. 8th International workshop on fluorocarbon plasma, 2006, autrans, France. 〈hal-00400476〉
  • T. Chevolleau, D. Eon, Maxime Darnon, L. Vallier, O. Joubert. Etching Mechanisms of Low-k Materials with the Solid FirstTM ILD Process in Fluorocarbon Based Plasma. AVS 52nd international symposium, 2005, United States. 〈hal-00461617〉
  • T. David, N. Possémé, T. Chevolleau, Maxime Darnon, O. Louveau, et al.. A Study of Plasma Treatments Limiting Metal Barrier Diffusion into Porous Low-k Materials. Proceeding of ADMETA, Advanced Metallization Asian Session, 2005, tokyo, Japan. 〈hal-00398855〉
  • Maxime Darnon, N. Posseme, D. Eon, T. David, T. Chevolleau, et al.. Etching of Narrow Porous SiOCH Trenches Using a TiN Metallic Hard Mask. AVS 52nd international symposium, Oct 2005, Boston, United States. 〈hal-00647625〉
  • Maxime Darnon, T. Chevolleau, N. Posseme, T. David, L. Vallier, et al.. Comparison between metallic and inorganic hard masks used for advanced porous low k patterning. 15th International Colloquium on Plasma Processes (CIP), 2005, autrans, France. 〈hal-00398848〉
  • Maxime Darnon, T. Chevolleau, N. Posseme, T. David, L. Vallier, et al.. Comparison Between Metallic and Inorganic Hard Masks Used for Advanced Porous Low-k Patterning. 15th International Colloquium on Plasma Processes, 2005, Autrans, France. 〈hal-00461955〉
  • N. Posseme, T. David, Maxime Darnon, T. Chevolleau, O. Joubert. Impact of Hard Mask Composition and Etching Chemistry on Porous Ultra Low-k Material Modification. 6th International Conference on Microelectronics and Interfaces, 2005, United States. 〈hal-00649906〉
  • S. Banna, A. Agarwal, T. Lill, Maxime Darnon, G. Cunge, et al.. Time−Modulation of High density Plasmas for Advanced Dry Etching Processes. 4th PESM workshop, May 2001, Belgium. 〈hal-00944972〉

Brevet9 documents

  • O. Joubert, B. Schwarz, J. Pereira, K. Menguelti, E. Pargon, et al.. Method of patterning of magnetic tunnel junctions. Patent n° : US 8,546,263,. 2013. 〈hal-00925756〉
  • O Desplats, T. Chevolleau, M. Darnon, C. Gourgon. Procédé de gravure autolimitant à base de niveaux multiples. France, Patent n° : DD 13 51606. 2013. 〈hal-01905068〉
  • Maxime Darnon, P. P. Joshi, Q. Lin. Method of patterning photosensitive material on a substrate containing a latent acid generator. Patent n° : US 8,475,667. 2013. 〈hal-00925758〉
  • Maxime Darnon, G.W. Gibson, P.P. Joshi, R.M. Martin, Y. Zang. Selective etch back process for carbon nanotubes integration. Patent n° : US 8,449,781. 2013. 〈hal-00860918〉
  • L.A. Clevenger, Maxime Darnon, A. D. Lisi, S. V. Nitta. Reversing tone of patterns on integrated circuit and nanoscale fabrication. Patent n° : US 8,183,694. 2012. 〈hal-00808853〉
  • Maxime Darnon, J. P. Gambino, E. E. Huang, Q. Lin. Interconnect structure fabricated without dry plasma etch processing. Patent n° : US 8,298,937. 2012. 〈hal-00808851〉
  • L.A. Clevenger, Maxime Darnon, Q. Lin, A. D. Lisi, S. V. Nitta. Method for air gap interconnect integration using photo-patternable low k material. Patent n° : US 8,241,992. 2012. 〈hal-00808852〉
  • L.A Clevenger, Maxime Darnon, A.D Lisi, S.N. Nitta. Process for reversing tone of patterning on integrated circuit and structural process for nanoscale fabrication. Patent n° : US 2011/0108989 A1 US7939446. 2011. 〈hal-00647704〉
  • S.S. Choi, L.A Clevenger, Maxime Darnon, D.C. Edelstein, S.V. Nitta, et al.. Forming Interconnects with Air Gaps. Patent n° : US7,790,601B1 12/561,651. 2010. 〈hal-00647715〉

Thèse1 document

  • Maxime Darnon. Les Procédés par Plasmas Impliqués dans l'Intégration des Matériaux SiOCH Poreux pour les Interconnexions en Microélectronique. Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2007. Français. 〈tel-00181477v2〉