MD
Maxime Darnon
3
Documents
Identifiants chercheurs
maxime-darnon-
0000-0002-6188-7157
- Google Scholar : https://scholar.google.fr/citations?user=ZRXEV4AAAAAJ&hl=fr
- IdRef : 124051758
Présentation
Publications
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Plasma Induced Damage on AlGaN/GaN Heterostructure During Gate Opening for Power DevicesJournal of Vacuum Science & Technology A, 2023, 41 (3), ⟨10.1116/6.0002339⟩
Article dans une revue
hal-04030008v1
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A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etchingphysica status solidi (a), 2018, pp.1700658. ⟨10.1002/pssa.201700658⟩
Article dans une revue
hal-01760514v1
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Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs)Journées nationales sur les technologies émergentes en micro-nano fabrication, (JNTE2019), Nov 2019, Grenoble, France
Communication dans un congrès
hal-02916150v1
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