Nikolay Cherkashin

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nikolay-cherkashin
0000-0002-0322-0864
IdRef : 183426924

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Publications

martin-hytch

	Electron microscopy by specimen design: application to strain measurements Nikolay Cherkashin , Thibaud Denneulin , Martin Hÿtch Scientific Reports, 2017, 7 (1), pp.12394 - 12394. ⟨10.1038/s41598-017-12695-8⟩ Article dans une revue hal-01707848v1
	Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes Daniele Barettin , Matthias auf Der Maur , Aldo Di Carlo , Alessandro Pecchia , Andrei F Tsatsulnikov Nanotechnology, 2017, 28 (27), ⟨10.1088/1361-6528/aa75a8⟩ Article dans une revue hal-01736017v1
	Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes D. Barettin , M.A.D. Maur , A.D. Di Carlo , A. Pecchia , A.F. Tsatsulnikov Nanotechnology, 2017, 28 (1), ⟨10.1088/0957-4484/28/1/015701⟩ Article dans une revue hal-01736015v1
	Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach Andrei F. F Tsatsulnikov , Wsevolod V. V Lundin , Alexei V. V Sakharov , Andrey E. E Nikolaev , E.E. E Zavarin Science of advanced materials, 2015, 7 (8), pp.1629-1635. ⟨10.1166/sam.2015.2277⟩ Article dans une revue hal-01721151v1
	Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys Konstantinos Pantzas , Gilles Patriarche , David Troadec , Mathieu Kociak , Nikolay Cherkashin Journal of Applied Physics, 2015, 117 (5), pp.55705. ⟨10.1063/1.4907210⟩ Article dans une revue hal-01721149v1
	Dynamical effects in strain measurements by dark-field electron holography Elsa Javon , Axel Lubk , Robin Cours , Shay Reboh , Nikolay Cherkashin Ultramicroscopy, 2014, 147, pp.70-85. ⟨10.1016/j.ultramic.2014.06.005⟩ Article dans une revue hal-01721158v1
	Dynamic scattering theory for dark-field electron holography of 3D strain fields Axel Lubk , Elsa Javon , Nikolay Cherkashin , Shay Reboh , Christophe Gatel Ultramicroscopy, 2014, 136, pp.42-49. ⟨10.1016/j.ultramic.2013.07.007⟩ Article dans une revue hal-01721153v1
	Local strain measurements at dislocations, disclinations and domain boundaries Martin Hÿtch , Christophe Gatel , Axel Lubk , Thibaud Denneulin , Lise Durand Microscopy and Microanalysis, 2014, 20 (3), pp.1044-1045. ⟨10.1017/S1431927614006941⟩ Article dans une revue hal-01721157v1
	Strain in hydrogen-implanted si investigated using dark-field electron holography Nikolay Cherkashin , Shay Reboh , Axel Lubk , Martin Hÿtch , Alain Claverie Applied Physics Express, 2013, 6 (9), ⟨10.7567/APEX.6.091301⟩ Article dans une revue hal-01736022v1
	Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy Nikolay Cherkashin , Shay Reboh , Martin Hÿtch , Alain Claverie , V.V. Preobrazhenskii Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩ Article dans une revue hal-01736028v1
	Monolithic white LEDs: Approaches, technology, design V.M. Ustinov , A.F. Tsatsulnikov , V.V. Lundin , A.V. Sakharov , A.E. Nikolaev Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩ Article dans une revue hal-01736030v1
	Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov physica status solidi (c), 2012, 9 (3-4), pp.774-777. ⟨10.1002/pssc.201100339⟩ Article dans une revue hal-01736032v1
	Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy L. Vincent , F. Fossard , T. Kociniewski , L. Largeau , Nikolay Cherkashin Applied Surface Science, 2012, 258 (23), pp.9208-9212. ⟨10.1016/j.apsusc.2011.07.074⟩ Article dans une revue hal-01736031v1
	Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding Nikolay Cherkashin , O. Kononchuk , Shay Reboh , Martin Hÿtch Acta Materialia, 2012, 60 (3), pp.1161-1173. ⟨10.1016/j.actamat.2011.10.054⟩ Article dans une revue hal-01736034v1
	Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory Nikolay Cherkashin , O. Kononchuk , Martin Hÿtch Solid State Phenomena, 2011, 178-179, pp.489-494. ⟨10.4028/www.scientific.net/SSP.178-179.489⟩ Article dans une revue hal-01736039v1
	Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice W.V. Lundin , A.E. Nikolaev , A.V. Sakharov , E.E. Zavarin , G.A. Valkovskiy Journal of Crystal Growth, 2011, 315 (1), pp.267--271. ⟨10.1016/j.jcrysgro.2010.09.043⟩ Article dans une revue hal-01736042v1
	InGaN/GaN short-period superlattices: synthesis, properties, applications A. F. Tsatsulnikov , W. V. Lundin , A. V. Sakharov , E. E. Zavarin , S. O. Usov physica status solidi (c), 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩ Article dans une revue hal-01736040v1
	Strain mapping in layers and devices by electron holography Martin Hÿtch , Nikolay Cherkashin , Shay Reboh , Florent Houdellier , Alain Claverie physica status solidi (a), 2011, 208 (3), pp.580-583. ⟨10.1002/pssa.201000281⟩ Article dans une revue hal-01736038v1
	Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs J.M. Hartmann , M. Py , P.H. Morel , T. Ernst , B. Prévitali ECS Transactions, 2010, 33 (6), pp.391-407. ⟨10.1149/1.3487570⟩ Article dans une revue hal-01736046v1
	The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes V.S. Sizov , A.F. Tsatsulnikov , A.V. Sakharov , W.V. Lundin , E.E. Zavarin Semiconductors, 2010, 44 (7), pp.924-930. ⟨10.1134/S106378261007016X⟩ Article dans une revue hal-01736047v1
	Formation of composite InGaN/GaN/InAlN quantum dots A.F. Tsatsul'Nikov , E.E. Zavarin , N.V. Kryzhanovskaya , W.V. Lundin , A.V. Saharov Semiconductors, 2010, 44 (10), pp.1338-1341. ⟨10.1134/S1063782610100167⟩ Article dans une revue hal-01736045v1
	Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates. M. Hartmann , L. Sanchez , W. van den Daele , A. Abadie , L. Baud Semiconductor Science & Technology, 2010, 25, pp.075010 Article dans une revue hal-00596336v1
	Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov Semiconductors, 2010, 44 (1), pp.93-97. ⟨10.1134/S1063782610010161⟩ Article dans une revue hal-01736052v1
	On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates Nikolay Cherkashin , Martin Hÿtch , Florent Houdellier , Florian Hüe , Vincent Paillard Applied Physics Letters, 2009, 94 (14), pp.141910. ⟨10.1063/1.3116648⟩ Article dans une revue hal-00417300v1
	Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs A.V. Sakharov , W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , A.E. Nikolaev Semiconductors, 2009, 43 (6), pp.812-817. ⟨10.1134/S1063782609060232⟩ Article dans une revue hal-01736055v1
	End of range defects in Ge S. Koffel , Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Gérard Benassayag Journal of Applied Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩ Article dans une revue hal-01736054v1
	Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Florian Hüe , J.M. Hartmann Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩ Article dans une revue hal-01736071v1
	Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate Nikolay Cherkashin , Martin Hÿtch , Etienne Snoeck , Alain Claverie , J.M. Hartmann Materials Science and Engineering: B, 2005, 124-125, pp.118--122. ⟨10.1016/j.mseb.2005.08.054⟩ Article dans une revue hal-01736084v1
	Structure determination of clusters formed in ultra-low energy high-dose implanted silicon Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩ Article dans une revue hal-01736085v1

	MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs Nikolay Cherkashin , Martin Hÿtch , Maxim Korytov , Daniele Barettin , A. V. Sakharov Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia Communication dans un congrès hal-01763074v1
	Advanced characterization of semiconductors Nikolay Cherkashin , François-Xavier Darras , Maxim Korytov , Christophe Gatel , Martin Hÿtch XV B-MRS, Sep 2016, Campinas, Brazil Communication dans un congrès hal-01767758v1
	Realistic model of LED structure with InGaN quantum-dots active region Daniele Barettin , Matthias auf Der Maur , Alessandro Pecchia , Walter Rodrigues , Andrei F. Tsatsulnikov Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩ Communication dans un congrès hal-01721150v1
	Measurement of crystalline lattice strain by transmission electron microscopy” Nikolay Cherkashin , Florent Houdellier , Martin Hÿtch , Maxim Korytov 14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France Communication dans un congrès hal-01763051v1
	Strain imaging of processed layers and devices by dark field electron holography Alain Claverie , Victor Boureau , Martin Hÿtch , Nikolay Cherkashin Congress of the Electron Microscopy Society of India, Jul 2014, ??, India Communication dans un congrès hal-01763638v1
	Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs A.F. Tsatsulnikov , W.V. Lundin , A.V. Sakharov , E.E. Zavarin , S.O. Usov PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩ Communication dans un congrès hal-01736043v1
	Optoelectronic structures with InAlN layers grown by MOVPE A.V. Sakharov , W.V. Lundin , E.E. Zavarin , M.A. Sinitsyn , S.O. Usov 30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩ Communication dans un congrès hal-01736041v1
	Strain Mapping of Layers and Devices Using Electron Holography Alain Claverie , Nikolay Cherkashin , Florian Hüe , Shay Reboh , Florent Houdellier ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩ Communication dans un congrès hal-01736051v1
	Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate Nikolay Cherkashin , Adrien Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩ Communication dans un congrès hal-01736065v1
	Determination of strain within Si1-yCy layers grown by CVD on a Si substrate Nikolay Cherkashin , A. Gouye , Florian Hüe , Florent Houdellier , Martin Hÿtch Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩ Communication dans un congrès hal-01736057v1
	Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS O. Weber , Y. Bogumilowicz , T. Ernst , J.-M. Hartmann , F. Ducroquet IEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩ Communication dans un congrès hal-01736083v1

	Dark-Field Electron Holography for Strain Mapping Martin Hÿtch , Florent Houdellier , Nikolay Cherkashin , Shay Reboh , Elsa Javon Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩ Chapitre d'ouvrage hal-01736026v1

Nikolay Cherkashin

Présentation

Publications

Electron microscopy by specimen design: application to strain measurements

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Dynamical effects in strain measurements by dark-field electron holography

Dynamic scattering theory for dark-field electron holography of 3D strain fields

Local strain measurements at dislocations, disclinations and domain boundaries

Strain in hydrogen-implanted si investigated using dark-field electron holography

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Monolithic white LEDs: Approaches, technology, design

Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding

Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

InGaN/GaN short-period superlattices: synthesis, properties, applications

Strain mapping in layers and devices by electron holography

Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

Formation of composite InGaN/GaN/InAlN quantum dots

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

End of range defects in Ge

Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Structure determination of clusters formed in ultra-low energy high-dose implanted silicon

MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs

Advanced characterization of semiconductors

Realistic model of LED structure with InGaN quantum-dots active region

Measurement of crystalline lattice strain by transmission electron microscopy”

Strain imaging of processed layers and devices by dark field electron holography

Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs

Optoelectronic structures with InAlN layers grown by MOVPE

Strain Mapping of Layers and Devices Using Electron Holography

Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate

Determination of strain within Si1-yCy layers grown by CVD on a Si substrate

Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS

Dark-Field Electron Holography for Strain Mapping