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Nikolay Cherkashin


Article dans une revue8 documents

  • Nikolay Cherkashin, Thibaud Denneulin, Martin Hÿtch. Electron microscopy by specimen design: application to strain measurements. Scientific Reports, Nature Publishing Group, 2017, 7 (1), pp.12394 - 12394. 〈10.1038/s41598-017-12695-8〉. 〈hal-01707848〉
  • Charles Renard, Timothée Molière, Nikolay Cherkashin, José Alvarez, Laetitia Vincent, et al.. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed. Scientific Reports, Nature Publishing Group, 2016, 6, pp.25328. 〈10.1038/srep25328〉. 〈hal-01316731〉
  • Nikolay Cherkashin, F. X. Darras, Pascal Pochet, S. Reboh, N. Ratel-Ramond, et al.. Modelling of point defect complex formation and its application to H+ ion implanted silicon. Acta Materialia, Elsevier, 2015, 99, pp.187-195. 〈10.1016/j.actamat.2015.07.078〉. 〈hal-01588204〉
  • Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro, et al.. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon. Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. 〈10.1021/nl4042438〉. 〈hal-01659180〉
  • M. Hartmann, L. Sanchez, W. Van den Daele, A. Abadie, L. Baud, et al.. Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.. Semiconductor Science & Technology, 2010, 25, pp.075010. 〈hal-00596336〉
  • Nikolay Cherkashin, Martin Hÿtch, Florent Houdellier, F. Hüe, V. Paillard, et al.. On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates. Applied Physics Letters, American Institute of Physics, 2009, 94 (14), p. 141910(3 p.). 〈10.1063/1.3116648〉. 〈hal-00417300〉
  • A. Claverie, C. Bonafos, Assayag G. Ben, S. Schamm, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation. Defect Diffus. Forum, 2006, 258-260, pp.531-541. 〈hal-00204809〉
  • B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Y. Lamrani, et al.. Depth dependence of defect evolution and TED during annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216, pp.90-94. 〈hal-00140976〉

Communication dans un congrès3 documents

  • Timothée Molière, Charles Renard, Alexandre Jaffré, Laetitia Vincent, Daniel Bouchier, et al.. Route toward III-V multispectral solar cells on silicon. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014. 〈hal-01099576〉
  • A. Claverie, C. Bonafos, Assayag G. Ben, S. Schamm, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation. 2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal. 2006. 〈hal-00115744〉
  • A. Claverie, Fuccio Cristiano, B. Colombeau, X. Hebras, P. Calvo, et al.. Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon. 2003, The Electrochemical Society Inc, Pennington, NJ, USA, pp.73, 2003. 〈hal-00146421〉