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166

Nikolay Cherkashin


Article dans une revue126 documents

  • Nikolay Cherkashin, Nabil Daghbouj, Grégory Seine, Alain Claverie. Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon. Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161556 - 161559. 〈10.1063/1.5012505〉. 〈hal-01736014〉
  • F. Stumpf, A. A. Abu Quba, P. Singer, M. Rumler, Nikolay Cherkashin, et al.. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy. Journal of Applied Physics, American Institute of Physics, 2018, 123 (12), pp.125104. 〈10.1063/1.5022558〉. 〈hal-01745004〉
  • Marie Coste, T. Molière, Nikolay Cherkashin, G. Hallais, L. Vincent, et al.. Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding. Thin Solid Films, Elsevier, 2018, 647, pp.13-18. 〈10.1016/j.tsf.2017.12.015〉. 〈hal-01736186〉
  • Nabil Daghbouj, Nikolay Cherkashin, Alain Claverie. A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon. Microelectronic Engineering, Elsevier, 2018, 190, pp.54-56. 〈10.1016/j.mee.2018.01.006〉. 〈hal-01736187〉
  • Nikolay Cherkashin, Thibaud Denneulin, Martin Hÿtch. Electron microscopy by specimen design: application to strain measurements. Scientific Reports, Nature Publishing Group, 2017, 7 (1), pp.12394 - 12394. 〈10.1038/s41598-017-12695-8〉. 〈hal-01707848〉
  • N.N. Ledentsov, V.A. Shchukin, Y.M. Shernyakov, M.M. Kulagina, A.S. Payusov, et al.. (In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (2), 〈10.1088/1361-6641/aa5144〉. 〈hal-01736018〉
  • D. Barettin, M.A.D. Maur, A.D. Di Carlo, A. Pecchia, A.F. Tsatsulnikov, et al.. Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes. Nanotechnology, Institute of Physics, 2017, 28 (1), 〈10.1088/0957-4484/28/1/015701〉. 〈hal-01736015〉
  • Daniele Barettin, Matthias Auf Der Maur, Aldo Di Carlo, Alessandro Pecchia, Andrei F Tsatsulnikov, et al.. Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes. Nanotechnology, Institute of Physics, 2017, 28 (27), 〈10.1088/1361-6528/aa75a8〉. 〈hal-01736017〉
  • V.G. Tikhomirov, V.E. Zemlyakov, V.V. Volkov, Y.M. Parnes, V.N. Vyuginov, et al.. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation. Semiconductors, 2016, 50 (2), pp.244-248. 〈10.1134/S1063782616020263〉. 〈hal-01721147〉
  • Andrei F. Tsatsulnikov, Wsevolod V. Lundin, Alexei V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs. Semiconductors, 2016, 50 (9), pp.1241-1247. 〈10.1134/S1063782616090232〉. 〈hal-01721148〉
  • Nikolay Cherkashin, François-Xavier Darras, Alain Claverie. Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing. Solid State Phenomena, 2016, 242, pp.190-195. 〈10.4028/www.scientific.net/SSP.242.190〉. 〈hal-01719486〉
  • Alain Claverie, Nikolay Cherkashin. On the origin of dislocation loops in irradiated materials: A point of view from silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2016, 374, pp.82-89. 〈10.1016/j.nimb.2015.09.011〉. 〈hal-01719487〉
  • S.Y. Karpov, Nikolay Cherkashin, Wsevolod V. Lundin, Andrey E. Nikolaev, Alexei V. Sakharov, et al.. Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency. Physica Status Solidi (A) Applications and Materials Science, 2016, 213 (1), pp.19-29. 〈10.1002/pssa.201532491〉. 〈hal-01721146〉
  • Charles Renard, Timothée Molière, Nikolay Cherkashin, José Alvarez, Laetitia Vincent, et al.. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed. Scientific Reports, Nature Publishing Group, 2016, 6, pp.25328. 〈10.1038/srep25328〉. 〈hal-01316731〉
  • Nabil Daghbouj, Nikolay Cherkashin, François-Xavier Darras, Vincent Paillard, M. Fnaiech, et al.. Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon. Journal of Applied Physics, American Institute of Physics, 2016, 119 (13), pp.135308 - 245301. 〈10.1063/1.4945032〉. 〈hal-01719485〉
  • Andrei F. Tsatsulnikov, Wsevolod V. Lundin, Alexei V. Sakharov, Andrey E. Nikolaev, E.E. Zavarin, et al.. Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach. SCIENCE OF ADVANCED MATERIALS, 2015, 7 (8), pp.1629-1635. 〈10.1166/sam.2015.2277〉. 〈hal-01721151〉
  • Andrei F. Tsatsulnikov, Wsevolod V. Lundin, Alexei V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency. Semiconductors, 2015, 49 (11), pp.1516-1521. 〈10.1134/S1063782615110238〉. 〈hal-01721152〉
  • Nikolay Cherkashin, François-Xavier Darras, P. Pochet, S. Reboh, Nicolas Ratel-Ramond, et al.. Modelling of point defect complex formation and its application to H+ ion implanted silicon. Acta Materialia, Elsevier, 2015, 99, pp.187-195. 〈10.1016/j.actamat.2015.07.078〉. 〈hal-01736020〉
  • Nikolay Cherkashin, Nabil Daghbouj, François-Xavier Darras, M. Fnaiech, Alain Claverie. Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy. Journal of Applied Physics, American Institute of Physics, 2015, 118 (24), pp.245301 - 135308. 〈10.1063/1.4938108〉. 〈hal-01719496〉
  • Konstantinos Pantzas, Gilles Patriarche, David Troadec, Mathieu Kociak, Nikolay Cherkashin, et al.. Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys. Journal of Applied Physics, American Institute of Physics, 2015, 117 (5), pp.55705. 〈10.1063/1.4907210〉. 〈hal-01721149〉
  • Larbi Laânab, Amine Belafhaili, Filadelfo Cristiano, Nikolay Cherkashin, Alain Claverie. The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys. Physica Status Solidi (C) Current Topics in Solid State Physics, 2014, 11 (1), pp.20-23. 〈10.1002/pssc.201300177〉. 〈hal-01719497〉
  • François-Xavier Darras, Nikolay Cherkashin, Filadelfo Cristiano, Emmanuel Scheid, Oleg Kononchuk, et al.. Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. 〈10.1016/j.nimb.2013.09.045〉. 〈hal-01719500〉
  • Wsevolod V. Lundin, Andrey E. Nikolaev, A.V. Sakharov, S.O. Usov, E.E. Zavarin, et al.. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers. Semiconductors, 2014, 48 (1), pp.53-57. 〈10.1134/S1063782614010199〉. 〈hal-01721154〉
  • Elsa Javon, Axel Lubk, Robin Cours, Shay Reboh, Nikolay Cherkashin, et al.. Dynamical effects in strain measurements by dark-field electron holography. Ultramicroscopy, Elsevier, 2014, 147, pp.70-85. 〈10.1016/j.ultramic.2014.06.005〉. 〈hal-01721158〉
  • Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro, et al.. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon. Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. 〈10.1021/nl4042438〉. 〈hal-01659180〉
  • Charles Renard, Nikolay Cherkashin, Alexandre Jaffré, Timothée Molière, Géraldine Hallais, et al.. Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2. Journal of Crystal Growth, Elsevier, 2014, 401, pp.554-558. 〈10.1016/j.jcrysgro.2014.01.065〉. 〈hal-01721160〉
  • Viktor S. Kopp, Vladimir M. Kaganer, Marina V. Baidakova, Wsevolod V. Lundin, Andrey E. Nikolaev, et al.. X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, American Institute of Physics, 2014, 115 (7), pp.073507. 〈10.1063/1.4865502〉. 〈hal-01721159〉
  • Fares Chouchane, Guilhem Almuneau, Nikolay Cherkashin, Alexandre Arnoult, Guy Lacoste, et al.. Local stress-induced effects on AlGaAs/AlOx oxidation front shape. Applied Physics Letters, American Institute of Physics, 2014, 105 (4), pp.41909 - 41909. 〈10.1063/1.4892094〉. 〈hal-01721161〉
  • Axel Lubk, Elsa Javon, Nikolay Cherkashin, Shay Reboh, Christophe Gatel, et al.. Dynamic scattering theory for dark-field electron holography of 3D strain fields. Ultramicroscopy, Elsevier, 2014, 136, pp.42-49. 〈10.1016/j.ultramic.2013.07.007〉. 〈hal-01721153〉
  • Martin Hÿtch, Christophe Gatel, Axel Lubk, Thibaud Denneulin, Lise Durand, et al.. Local strain measurements at dislocations, disclinations and domain boundaries. Microscopy and Microanalysis, Cambridge University Press (CUP), 2014, 20 (3), pp.1044-1045. 〈10.1017/S1431927614006941〉. 〈hal-01721157〉
  • Nikolay Cherkashin, Shay Reboh, Axel Lubk, Martin Hÿtch, Alain Claverie. Strain in hydrogen-implanted si investigated using dark-field electron holography. Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2013, 6 (9), 〈10.7567/APEX.6.091301〉. 〈hal-01736022〉
  • A. Belafhaili, L. Laânab, F. Cristiano, Nikolay Cherkashin, Alain Claverie. Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation. Materials Science in Semiconductor Processing, Elsevier, 2013, 16 (6), pp.1655-1658. 〈10.1016/j.mssp.2013.04.014〉. 〈hal-01736024〉
  • Shay Reboh, J.F. Barbot, Maxime Vallet, M.F. Beaufort, F. Rieutord, et al.. Nanoscale organization by elastic interactions between H and He platelets in Si. Journal of Applied Physics, American Institute of Physics, 2013, 114 (7), pp.073517. 〈10.1063/1.4818812〉. 〈hal-01736021〉
  • Nikolay Cherkashin, Shay Reboh, Martin Hÿtch, Alain Claverie, V.V. Preobrazhenskii, et al.. Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy. Applied Physics Letters, American Institute of Physics, 2013, 102 (17), pp.173115. 〈10.1063/1.4804380〉. 〈hal-01736028〉
  • Shay Reboh, F. Rieutord, L. Vignoud, F. Mazen, Nikolay Cherkashin, et al.. Effect of H-implantation in the local elastic properties of silicon crystals. Applied Physics Letters, American Institute of Physics, 2013, 103 (18), pp.181911. 〈10.1063/1.4828659〉. 〈hal-01736023〉
  • A.F. Tsatsulnikov, W.V. Lundin, E.E. Zavarin, A.V. Sakharov, Y.G. Musikhin, et al.. InGaN/GaN heterostructures grown by submonolayer deposition. Semiconductors, 2012, 46 (10), pp.1335-1340. 〈10.1134/S106378261210017X〉. 〈hal-01736029〉
  • A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs. Physica Status Solidi (C) Current Topics in Solid State Physics, 2012, 9 (3-4), pp.774-777. 〈10.1002/pssc.201100339〉. 〈hal-01736032〉
  • A.F. Tsatsulnikov, W.V. Lundin, E.E. Zavarin, A.E. Nikolaev, A.V. Sakharov, et al.. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region. Semiconductors, 2012, 46 (10), pp.1281-1285. 〈10.1134/S1063782612100168〉. 〈hal-01736035〉
  • V.M. Ustinov, A.F. Tsatsulnikov, V.V. Lundin, A.V. Sakharov, A.E. Nikolaev, et al.. Monolithic white LEDs: Approaches, technology, design. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, Springer Verlag, 2012, 6 (3), pp.501-504. 〈10.1134/S1027451012060237〉. 〈hal-01736030〉
  • L. Vincent, F. Fossard, T. Kociniewski, L. Largeau, Nikolay Cherkashin, et al.. Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy. Applied Surface Science, Elsevier, 2012, 258 (23), pp.9208-9212. 〈10.1016/j.apsusc.2011.07.074〉. 〈hal-01736031〉
  • Nikolay Cherkashin, O. Kononchuk, Shay Reboh, Martin Hÿtch. Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding. Acta Materialia, Elsevier, 2012, 60 (3), pp.1161-1173. 〈10.1016/j.actamat.2011.10.054〉. 〈hal-01736034〉
  • Nikolay Cherkashin, Alain Claverie, D. Sotta, J.-M. Bethoux, L. Capello, et al.. Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices. Applied Physics Letters, American Institute of Physics, 2012, 101 (2), pp.023105. 〈10.1063/1.4733619〉. 〈hal-01736033〉
  • L. Vincent, R. Boukhicha, Nikolay Cherkashin, Shay Reboh, G. Patriarche, et al.. Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires. Nanotechnology, Institute of Physics, 2012, 23 (39), 〈10.1088/0957-4484/23/39/395701〉. 〈hal-01736036〉
  • Martin Hÿtch, Nikolay Cherkashin, Shay Reboh, Florent Houdellier, Alain Claverie. Strain mapping in layers and devices by electron holography. Physica Status Solidi (A) Applications and Materials Science, 2011, 208 (3), pp.580-583. 〈10.1002/pssa.201000281〉. 〈hal-01736038〉
  • A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, et al.. InGaN/GaN short-period superlattices: synthesis, properties, applications. physica status solidi (c), Wiley, 2011, 8 (7-8), pp.2308--2310. 〈10.1002/pssc.201001040〉. 〈hal-01736040〉
  • Nikolay Cherkashin, O. Kononchuk, Martin Hÿtch. Reconstruction of a high angle tilt (110)/(001) boundary in Si using O-lattice theory. Solid State Phenomena, 2011, 178-179, pp.489-494. 〈10.4028/www.scientific.net/SSP.178-179.489〉. 〈hal-01736039〉
  • A.A. Achkeev, R.I. Khaibullin, L.R. Tagirov, A. Mackova, V. Hnatowicz, et al.. Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO 2. Physics of the Solid State, American Institute of Physics, 2011, 53 (3), pp.543-553. 〈10.1134/S1063783411030024〉. 〈hal-01736037〉
  • W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, E.E. Zavarin, G.A. Valkovskiy, et al.. Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice. Journal of Crystal Growth, Elsevier, 2011, 315 (1), pp.267--271. 〈10.1016/j.jcrysgro.2010.09.043〉. 〈hal-01736042〉
  • V.S. Sizov, A.F. Tsatsulnikov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, et al.. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes. Semiconductors, 2010, 44 (7), pp.924-930. 〈10.1134/S106378261007016X〉. 〈hal-01736047〉
  • A.F. Tsatsul'Nikov, E.E. Zavarin, N.V. Kryzhanovskaya, W.V. Lundin, A.V. Saharov, et al.. Formation of composite InGaN/GaN/InAlN quantum dots. Semiconductors, 2010, 44 (10), pp.1338-1341. 〈10.1134/S1063782610100167〉. 〈hal-01736045〉
  • W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.V. Sakharov, S.O. Usov, et al.. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes. Semiconductors, 2010, 44 (1), pp.123-126. 〈10.1134/S1063782610010215〉. 〈hal-01736044〉
  • M. Hartmann, L. Sanchez, W. Van den Daele, A. Abadie, L. Baud, et al.. Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates.. Semiconductor Science & Technology, 2010, 25, pp.075010. 〈hal-00596336〉
  • A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes. Semiconductors, 2010, 44 (1), pp.93-97. 〈10.1134/S1063782610010161〉. 〈hal-01736052〉
  • Alain Claverie, S. Koffel, Nikolay Cherkashin, Gérard Benassayag, P. Scheiblin. Amorphization, recrystallization and end of range defects in germanium. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2307--2313. 〈10.1016/j.tsf.2009.09.162〉. 〈hal-01736049〉
  • Shay Reboh, F. Schaurich, A. Declemy, J.F. Barbot, M.F. Beaufort, et al.. On the microstructure of Si coimplanted with H+ and He + ions at moderate energies. Journal of Applied Physics, American Institute of Physics, 2010, 108 (2), pp.023502. 〈10.1063/1.3459884〉. 〈hal-01736048〉
  • J.M. Hartmann, M. Py, P.H. Morel, T. Ernst, B. Prévitali, et al.. Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs. ECS Transactions, Electrochemical Society, Inc., 2010, 33 (6), pp.391-407. 〈10.1149/1.3487570 〉. 〈hal-01736046〉
  • F. Okba, Nikolay Cherkashin, Z. Di, M. Nastasi, F. Rossi, et al.. Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer. Applied Physics Letters, American Institute of Physics, 2010, 97 (3), pp.31917-31917. 〈10.1063/1.3467455〉. 〈hal-01736050〉
  • Nikolay Cherkashin, Martin Hÿtch, Florent Houdellier, Florian Hüe, Vincent Paillard, et al.. On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates. Applied Physics Letters, American Institute of Physics, 2009, 94 (14), pp.141910. 〈10.1063/1.3116648〉. 〈hal-00417300〉
  • S. Koffel, Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, Gérard Benassayag, et al.. End of range defects in Ge. Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. 〈10.1063/1.3153985〉. 〈hal-01736054〉
  • A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.E. Nikolaev, et al.. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs. Semiconductors, 2009, 43 (6), pp.812-817. 〈10.1134/S1063782609060232〉. 〈hal-01736055〉
  • P. Tsouroutas, D. Tsoukalas, I. Zergioti, Nikolay Cherkashin, Alain Claverie. Modeling and experiments on diffusion and activation of phosphorus in germanium. Journal of Applied Physics, American Institute of Physics, 2009, 105 (9), pp.094910. 〈10.1063/1.3117485〉. 〈hal-01736053〉
  • J M Hartmann, A Abbadie, Nikolay Cherkashin, H Grampeix, L Clavelier. Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)\mathsemicolon Ge surface passivation by Si. Semiconductor Science and Technology, IOP Publishing, 2009, 24 (5), pp.055002. 〈10.1088/0268-1242/24/5/055002〉. 〈hal-01736056〉
  • J.M. Hartmann, F. Andrieu, D. Lafond, T. Ernst, Y. Bogumilowicz, et al.. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2008, 154-155 (1-3), pp.76-84. 〈10.1016/j.mseb.2008.08.009〉. 〈hal-01736060〉
  • P. Tsouroutas, D. Tsoukalas, I. Zergioti, Nikolay Cherkashin, Alain Claverie. Diffusion and activation of phosphorus in germanium. Materials Science in Semiconductor Processing, Elsevier, 2008, 11 (5-6), pp.372--377. 〈10.1016/j.mssp.2008.09.005〉. 〈hal-01736063〉
  • S. Personnic, K.K. Bourdelle, F. Letertre, A. Tauzin, Nikolay Cherkashin, et al.. Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001). Journal of Applied Physics, American Institute of Physics, 2008, 103 (2), pp.23508-1 - 23508-9. 〈10.1063/1.2829807〉. 〈hal-01736058〉
  • P. Nguyen, K.K. Bourdelle, C. Aulnette, F. Lallement, N. Daix, et al.. Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H . Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.113526. 〈10.1063/1.3033555〉. 〈hal-01736059〉
  • S. Boninelli, G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, et al.. Formation and evolution of F nanobubbles in amorphous and crystalline Si. Applied Physics Letters, American Institute of Physics, 2008, 93 (6), pp.61906 - 171916. 〈10.1063/1.2969055〉. 〈hal-01736061〉
  • Sylvie Schamm-Chardon, Caroline Bonafos, H. Coffin, Nikolay Cherkashin, Marzia Carrada, et al.. Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS. Ultramicroscopy, Elsevier, 2008, 108 (4), pp.346--357. 〈10.1016/j.ultramic.2007.05.008〉. 〈hal-01736064〉
  • Xavier Hebras, P. Nguyen, K.K. Bourdelle, F. Letertre, Nikolay Cherkashin, et al.. Comparison of platelet formation in hydrogen and helium-implanted silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2007, 262 (1), pp.24-28. 〈10.1016/j.nimb.2007.04.158〉. 〈hal-01736070〉
  • Nikolay Cherkashin, Alain Claverie, Caroline Bonafos, V.V. Chaldyshev, N.A. Bert, et al.. Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism. Journal of Applied Physics, American Institute of Physics, 2007, 102 (2), pp.023520. 〈10.1063/1.2749303〉. 〈hal-01736067〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks. Applied Physics Letters, American Institute of Physics, 2007, 90 (26), pp.263513. 〈10.1063/1.2752769〉. 〈hal-01736066〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation. Microelectronic Engineering, Elsevier, 2007, 84 (9-10), pp.1986--1989. 〈10.1016/j.mee.2007.04.068〉. 〈hal-01736069〉
  • A. Claverie, C. Bonafos, Gérard Benassayag, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation. Defect Diffus. Forum, 2006, 258-260, pp.531-541. 〈hal-00204809〉
  • Nikolay Cherkashin, Martin Hÿtch, Etienne Snoeck, Florian Hüe, J.M. Hartmann, et al.. Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. 〈10.1016/j.nimb.2006.10.051〉. 〈hal-01736071〉
  • S. Boninelli, Nikolay Cherkashin, Alain Claverie, Fuccio Cristiano. Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. 〈10.1016/j.nimb.2006.10.019〉. 〈hal-01736073〉
  • Fuccio Cristiano, Y. Lamrani, F. Severac, M. Gavelle, S. Boninelli, et al.. Defects evolution and dopant activation anomalies in ion implanted silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. 〈10.1016/j.nimb.2006.10.046〉. 〈hal-01736079〉
  • M. Perego, M. Fanciulli, Caroline Bonafos, Nikolay Cherkashin. Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films. Materials Science and Engineering: C, Elsevier, 2006, 26 (5-7), pp.835--839. 〈10.1016/j.msec.2005.09.058〉. 〈hal-01736077〉
  • P. Tsouroutas, D. Tsoukalas, A. Florakis, I. Zergioti, A.A. Serafetinides, et al.. Laser annealing for n+/p junction formation in germanium. Materials Science in Semiconductor Processing, Elsevier, 2006, 9 (4-5), pp.644--649. 〈10.1016/j.mssp.2006.08.013〉. 〈hal-01736078〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag, et al.. Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers . Journal of Applied Physics, American Institute of Physics, 2006, 99 (4), pp.044302. 〈10.1063/1.2171785〉. 〈hal-01736074〉
  • S. Boninelli, Nikolay Cherkashin, Alain Claverie, Fuccio Cristiano. Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops . Applied Physics Letters, American Institute of Physics, 2006, 89 (16), pp.161904. 〈10.1063/1.2361178〉. 〈hal-01736076〉
  • Nikolay Cherkashin, Caroline Bonafos, H. Coffin, Marzia Carrada, Sylvie Schamm-Chardon, et al.. Fabrication of nanocrystal memories by ultra low energy ion implantation. physica status solidi (c), Wiley, 2005, 2 (6), pp.1907--1911. 〈10.1002/pssc.200460523〉. 〈hal-01736090〉
  • Nikolay Cherkashin, Martin Hÿtch, Fuccio Cristiano, A. Claverie. Structure determination of clusters formed in ultra-low energy high-dose implanted silicon. Solid State Phenomena, 2005, 108-109, pp.303-308. 〈10.4028/www.scientific.net/SSP.108-109.303〉. 〈hal-01736085〉
  • Y. Bogumilowicz, J.M. Hartmann, Nikolay Cherkashin, Alain Claverie, G. Rolland, et al.. SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2005, 124-125 (SUPPL.), pp.113-117. 〈10.1016/j.mseb.2005.08.052〉. 〈hal-01736080〉
  • A. Kanjilal, J.L. Hansen, P. Gaiduk, A.N. Larsen, P. Normand, et al.. Size and aerial density distributions of Ge nanocrystals in a SiO 2 layer produced by molecular beam epitaxy and rapid thermal processing. Applied Physics A: Materials Science and Processing, 2005, 81 (2), pp.363-366. 〈10.1007/s00339-004-2924-3〉. 〈hal-01736082〉
  • Y. Bogumilowicz, J.M. Hartmann, F. Laugier, G. Rolland, T. Billon, et al.. High germanium content SiGe virtual substrates grown at high temperatures. Journal of Crystal Growth, Elsevier, 2005, 283 (3-4), pp.346--355. 〈10.1016/j.jcrysgro.2005.06.036〉. 〈hal-01736086〉
  • Caroline Bonafos, H. Coffin, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag, et al.. Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications. Solid-State Electronics, Elsevier, 2005, 49 (11), pp.1734--1744. 〈10.1016/j.sse.2005.10.001〉. 〈hal-01736088〉
  • W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani, et al.. Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions. Journal of The Electrochemical Society, Electrochemical Society, 2005, 152 (10), pp.G787. 〈10.1149/1.2018176〉. 〈hal-01736089〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Marzia Carrada, Nikolay Cherkashin, et al.. Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications. Materials Science and Engineering: B, Elsevier, 2005, 124-125, pp.499--503. 〈10.1016/j.mseb.2005.08.129〉. 〈hal-01736081〉
  • Nikolay Cherkashin, Martin Hÿtch, Etienne Snoeck, Alain Claverie, J.M. Hartmann, et al.. Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate. Materials Science and Engineering: B, Elsevier, 2005, 124-125, pp.118--122. 〈10.1016/j.mseb.2005.08.054〉. 〈hal-01736084〉
  • P. Calvo, Alain Claverie, Nikolay Cherkashin, B. Colombeau, Y. Lamrani, et al.. Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. 〈10.1016/j.nimb.2003.11.075〉. 〈hal-01736098〉
  • M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan, et al.. Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures. Semiconductors, 2004, 38 (10), pp.1207--1211. 〈10.1134/1.1808830〉. 〈hal-01736102〉
  • Silke Paul, Wilfried Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano. Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle. MRS Proceedings, 2004, 810, 〈10.1557/proc-810-c5.4〉. 〈hal-01736104〉
  • P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, et al.. Capacitance study of electron traps in low-temperature-grown GaAs. Semiconductors, 2004, 38 (4), pp.387--392. 〈10.1134/1.1734663〉. 〈hal-01736105〉
  • Y. Bogumilowicz, J.M. Hartmann, J.F. Damlencourt, B. Vandelle, A. Abbadie, et al.. High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes. Proceedings - Electrochemical Society, 2004, 7, pp.665-679. 〈hal-01736107〉
  • P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, et al.. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.228-238. 〈10.1016/j.nimb.2003.11.039〉. 〈hal-01736094〉
  • B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Y. Lamrani, et al.. Depth dependence of defect evolution and TED during annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216, pp.90-94. 〈hal-00140976〉
  • T. Müller, K.-H. Heinig, W. Möller, Caroline Bonafos, H. Coffin, et al.. Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology. Applied Physics Letters, American Institute of Physics, 2004, 85 (12), pp.2373-2375. 〈hal-01736097〉
  • Fuccio Cristiano, Nikolay Cherkashin, P. Calvo, Y. Lamrani, Xavier Hebras, et al.. Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. 〈10.1016/j.mseb.2004.07.049〉. 〈hal-01736096〉
  • Fuccio Cristiano, Nikolay Cherkashin, Xavier Hebras, P. Calvo, Y. Lamrani, et al.. Ion beam induced defects in crystalline silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.46-56. 〈10.1016/j.nimb.2003.11.019〉. 〈hal-01736101〉
  • Caroline Bonafos, Marzia Carrada, Nikolay Cherkashin, H. Coffin, D. Chassaing, et al.. Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation. Journal of Applied Physics, American Institute of Physics, 2004, 95 (10), pp.5696-5702. 〈10.1063/1.1695594〉. 〈hal-01736103〉
  • A. Wellner, Vincent Paillard, H. Coffin, Nikolay Cherkashin, Caroline Bonafos. Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate. Journal of Applied Physics, American Institute of Physics, 2004, 96 (4), pp.2403-2405. 〈10.1063/1.1765853〉. 〈hal-01736095〉
  • T. Müller, K.-H. Heinig, Caroline Bonafos, H. Coffin, Nikolay Cherkashin, et al.. Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology. Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. 〈10.1557/PROC-792-R8.7〉. 〈hal-01736111〉
  • T.V. Shubina, V.N. Jmerik, S.V. Ivanov, D.D. Solnyshkov, Nikolay Cherkashin, et al.. Polarized micro-photoluminescence spectroscopy of GaN nanocolumns. physica status solidi (c), Wiley, 2003, pp.2602-2605. 〈10.1002/pssc.200303330〉. 〈hal-01736108〉
  • Nikolay Cherkashin, M. V. Maksimov, A. G. Makarov, V. A. Shchukin, V. M. Ustinov, et al.. Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode. Semiconductors, 2003, 37 (7), pp.861--865. 〈10.1134/1.1592865〉. 〈hal-01736113〉
  • Marzia Carrada, Nikolay Cherkashin, Caroline Bonafos, Gérard Benassayag, D. Chassaing, et al.. Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2003, 101 (1-3), pp.204-207. 〈10.1016/S0921-5107(02)00724-9〉. 〈hal-01736116〉
  • A. Kanjilal, J.L. Hansen, P. Gaiduk, A.N. Larsen, Nikolay Cherkashin, et al.. Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy. Applied Physics Letters, American Institute of Physics, 2003, 82 (8), pp.1212-1214. 〈10.1063/1.1555709〉. 〈hal-01736109〉
  • F. Cristiano, Xavier Hebras, Nikolay Cherkashin, Alain Claverie, W. Lerch, et al.. Clusters formation in ultralow-energy high-dose boron-implanted silicon. Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. 〈10.1063/1.1637440〉. 〈hal-01736115〉
  • P. Normand, E. Kapetanakis, P. Dimitrakis, D. Tsoukalas, K. Beltsios, et al.. Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis. Applied Physics Letters, American Institute of Physics, 2003, 83 (1), pp.168-170. 〈10.1063/1.1588378〉. 〈hal-01736112〉
  • B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Nikolay Cherkashin, et al.. Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon . Applied Physics Letters, American Institute of Physics, 2003, 83 (10), pp.1953-1955. 〈10.1063/1.1608489〉. 〈hal-01736110〉
  • P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, D. Tsoukalas, et al.. Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis. Microelectronic Engineering, Elsevier, 2003, 67-68, pp.629-634. 〈10.1016/S0167-9317(03)00124-2〉. 〈hal-01736114〉
  • N.A. Bert, Nikolay Cherkashin, V.V. Chaldyshev, A. Claverie, V.V. Preobrazhenskii, et al.. Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 2002, pp.233-236. 〈10.1109/SIM.2002.1242762〉. 〈hal-01736118〉
  • A.A. Tonkikh, V.A. Egorov, N.K. Polyakov, G.?. Tsyrlin, B.V. Volovik, et al.. Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures. Technical Physics Letters, 2002, 28 (3), pp.191-193. 〈10.1134/1.1467272〉. 〈hal-01736119〉
  • B. Bayha, S. Paul, W. Lerch, D.F. Downey, E.A. Arevalo, et al.. Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime. Proceedings of the International Conference on Ion Implantation Technology, 2002, 22-27-September-2002, pp.618-621. 〈10.1109/IIT.2002.1258081〉. 〈hal-01736121〉
  • D. S. Sizov, M. V. Maksimov, A. F. Tsatsul'Nikov, Nikolay Cherkashin, N. V. Kryzhanovskaya, et al.. The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix. Semiconductors, 2002, 36 (9), pp.1020--1026. 〈10.1134/1.1507285〉. 〈hal-01736122〉
  • V. V. Mamutin, Nikolay Cherkashin, V. A. Vekshin, V. N. Zhmerik, S. V. Ivanov. Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy. Physics of the Solid State, American Institute of Physics, 2001, 43 (1), pp.151--156. 〈10.1134/1.1340201〉. 〈hal-01736127〉
  • N.D. Zakharov, P. Werner, U. GÖsele, N.N. Ledentsov, D. Bimberg, et al.. Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 ?m range. Materials Research Society Symposium - Proceedings, 2001, 672, pp.O8.5.1-O8.5.6. 〈hal-01736124〉
  • I.L. Krestnikov, Nikolay Cherkashin, D.S. Sizov, D.A. Bedarev, I.V. Kochnev, et al.. InGaAs nanodomains formed in situ on the surface of (Al,Ga)As. Technical Physics Letters, 2001, 27 (3), pp.233-235. 〈10.1134/1.1359837〉. 〈hal-01736125〉
  • V.A. Egorov, N.K. Polyakov, A.A. Tonkikh, V.N. Petrov, G.E. Cirlin, et al.. Photoluminescence emission (1.3-1.4 ?m) from quantum dots heterostructures based on GaAs. Applied Surface Science, Elsevier, 2001, 175-176, pp.243-248. 〈hal-01736123〉
  • N N Ledentsov, V A Shchukin, D Bimberg, V M Ustinov, Nikolay Cherkashin, et al.. Reversibility of the island shape, volume and density in Stranski-Krastanow growth. Semiconductor Science and Technology, IOP Publishing, 2001, 16 (6), pp.502--506. 〈10.1088/0268-1242/16/6/316〉. 〈hal-01736128〉
  • B V Volovik, A R Kovsh, W Passenberg, H Kuenzel, N Grote, et al.. Optical and structural properties of self-organized InGaAsN/GaAs nanostructures. Semiconductor Science and Technology, IOP Publishing, 2001, 16 (3), pp.186--190. 〈10.1088/0268-1242/16/3/312〉. 〈hal-01736129〉
  • Nikolay Cherkashin, N.A. Bert, N.N. Ledentsov, I.V. Kochnev, V.M. Lantratov, et al.. Influence of annealing on the formation of inGaAs quantum dots in GaAs matrix during metal organic chemical vapor deposition. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.117-120. 〈hal-01736134〉
  • M.M. Sobolev, I.V. Kochnev, V.M. Lantratov, N.A. Bert, Nikolay Cherkashin, et al.. Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands. Semiconductors, 2000, 34 (2), pp.195-204. 〈10.1134/1.1187932〉. 〈hal-01736130〉
  • Nikolay Cherkashin, N.A. Bert, Yu.G. Musikhin, S.V. Novikov, T.S. Cheng, et al.. TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate. Semiconductors, 2000, 34 (8), pp.867-871. 〈10.1134/1.1188090〉. 〈hal-01736131〉
  • I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, D. Bimberg, D.A. Bedarev, et al.. Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358. 〈hal-01736132〉
  • N N Ledentsov, M V Maximov, D Bimberg, T Maka, C M Sotomayor Torres, et al.. 1.3 \mathrmμm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition. Semiconductor Science and Technology, IOP Publishing, 2000, 15 (6), pp.604--607. 〈10.1088/0268-1242/15/6/320〉. 〈hal-01736135〉
  • M.M. Sobolev, I.V. Kochnev, V.M. Lantratov, Nikolay Cherkashin, V.V. Emtsev. Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots. Physica B: Condensed Matter, Elsevier, 1999, 273-274, pp.959-962. 〈hal-01736136〉

Communication dans un congrès38 documents

  • Nikolay Cherkashin. Strain measurements and mapping with a nanometer resolution and high precision at the most basic conventional TEM: moiré based technique by specimen design. Energy Materials Nanotechnology (EMN 2018), May 2018, Heraklion, Greece. 〈http://emnmeeting.org/2018/heraklion-crete/〉. 〈hal-01763087〉
  • Alain Claverie, Nikolay Cherkashin. New developments of the SmartCut process for slicing thin layers. EMN Conference, May 2018, Héraklion, Greece. 〈hal-01767500〉
  • Nikolay Cherkashin. Advanced methods for strain measurements in crystalline materials by transmission electron microscopy”, Nanostructures: Physics and Technology. 26th Intern. Symposium, Jun 2018, Minsk, Belarus. 〈http://www.ioffe.ru/NANO2018/〉. 〈hal-01767536〉
  • Nikolay Cherkashin, François-Xavier Darras, Nabil Daghbouj, Alain Claverie. Materials science behind the Smart Cut process. 22nd Intern. Conf. on Ion Implantation Technology (IIT 2018), Sep 2018, Würzburg, Germany. 〈https://www.iit2018.org/〉. 〈hal-01767778〉
  • Nikolay Cherkashin, Nabil Daghbouj, Alain Claverie. Sequential He++H+ ion implantation in silicon: factors affecting blistering”. 4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India. 〈https://www.facebook.com/ICNIB2017/〉. 〈hal-01763083〉
  • N.N. Ledentsov, V.A. Shchukin, Y.M. Shernyakov, M.M. Kulagina, A.S. Payusov, et al.. Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates. SPIE LASE 2017, High-Power Diode Laser Technology XV, Jan 2017, San Francisco, United States. 10086, 2017, 〈10.1117/12.2252957〉. 〈hal-01736016〉
  • Alain Claverie, Nikolay Cherkashin. The materials science behind the Smart Cut process. IWPSD 2017, 2017, New Delhi, India. 〈hal-01763588〉
  • Alain Claverie, Nikolay Cherkashin. . Effect of the Order of He and H Ion Sequential Implantations on Damage Generation and Subsequent Thermal Evolution of Defects in Silicon. SMMIB 2017, 2017, Lisbonne, Portugal. 〈hal-01763581〉
  • Alain Claverie, Nabil Daghbouj, Nikolay Cherkashin. Blistering of silicon surfaces due to very low energy H and He co-implantation. EMN Conference, May 2016, Dubrovnic, Croatia. 〈hal-01763096〉
  • Nikolay Cherkashin, François-Xavier Darras, Maxim Korytov, Christophe Gatel, Martin Hÿtch. Advanced characterization of semiconductors. XV B-MRS, Sep 2016, Campinas, Brazil. 〈hal-01767758〉
  • Nikolay Cherkashin, Martin Hÿtch, M Korytov, Daniele Barettin, A. V. Sakharov, et al.. MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs . Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia. 〈http://emnmeeting.org/croatia/〉. 〈hal-01763074〉
  • Daniele Barettin, Matthias Auf Der Maur, Alessandro Pecchia, Walter Rodrigues, Andrei F. Tsatsulnikov, et al.. Realistic model of LED structure with InGaN quantum-dots active region. Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown or Invalid Region. pp.1543-1546, 2015, 〈10.1109/NANO.2015.7388939〉. 〈hal-01721150〉
  • Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, M Korytov. Measurement of crystalline lattice strain by transmission electron microscopy”. 14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France. 〈http://www.crhea.cnrs.fr/sfmu2015/ 〉. 〈hal-01763051〉
  • N.N. Ledentsov, V.A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Nikolay Cherkashin, et al.. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces. SPIE OPTO 2015, Feb 2015, San Francisco, United States. 9383, 2015, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. 〈10.1117/12.2083953〉. 〈hal-01736019〉
  • Filadelfo Cristiano, Y. Qiu, Eléna Bedel-Pereira, Karim Huet, Fulvio Mazzamuto, et al.. Extended defects in ion-implanted si during nanosecond laser annealing. Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, 2014, 〈10.1109/IWJT.2014.6842019〉. 〈hal-01721156〉
  • Timothée Molière, Charles Renard, Alexandre Jaffré, Laetitia Vincent, Daniel Bouchier, et al.. Route toward III-V multispectral solar cells on silicon. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014. 〈hal-01099576〉
  • Alain Claverie, Nikolay Cherkashin. Defects and Strain imaging of ion implanted materials. Ion Implantation Technology 2014, Jun 2014, Portland, United States. 〈hal-01763647〉
  • Alain Claverie, Victor Boureau, Martin Hÿtch, Nikolay Cherkashin. Strain imaging of processed layers and devices by dark field electron holography. Congress of the Electron Microscopy Society of India, Jul 2014, ??, India. 〈hal-01763638〉
  • A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs. PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. AIP conference proceedings, 1399, pp.253-254, 2011, PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. 〈10.1063/1.3666350〉. 〈hal-01736043〉
  • Alain Claverie, Nikolay Cherkashin, Florian Hüe, Shay Reboh, Florent Houdellier, et al.. Strain Mapping of Layers and Devices Using Electron Holography. ECS Trans. 2010, 2010, Unknown, Unknown or Invalid Region. The Electrochemical Society, 2010, 〈10.1149/1.3487533〉. 〈hal-01736051〉
  • A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, S.O. Usov, et al.. Optoelectronic structures with InAlN layers grown by MOVPE. Jisoon Ihm, Hyeonsik Cheong. 30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. AIP, AIP Conference Proceedings, 1399, pp.107-108, 2011, 〈10.1063/1.3666279〉. 〈hal-01736041〉
  • Nikolay Cherkashin, Adrien Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch, et al.. Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate. ECS Transactions, May 2008, Unknown, Unknown or Invalid Region. The Electrochemical Society, 2008, 〈10.1149/1.2911510〉. 〈hal-01736065〉
  • Sandrine Lhostis, Clement Gaumer, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Crystalline Structure of HfZrO Thin Films and ZrO2 / HfO2 bi-Layers Grown by AVD for MOS Applications. ECS Transactions, 2008, Unknown, Unknown or Invalid Region. The Electrochemical Society, 2008, 〈10.1149/1.2911489〉. 〈hal-01736062〉
  • Nikolay Cherkashin, A. Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch, et al.. Determination of strain within Si1-yCy layers grown by CVD on a Si substrate. Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. 1026, pp.12-19, 2011, 〈10.1557/PROC-1026-C07-03〉. 〈hal-01736057〉
  • A. Claverie, C. Bonafos, Gérard Benassayag, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation. 2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal. 2006. 〈hal-00115744〉
  • S. Personnic, A. Tauzin, K.K. Bourdelle, F. Letertre, N. Kernevez, et al.. Time dependence study of hydrogen-induced defects in silicon during thermal anneals. 16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. AIP, AIP Conference Proceedings, 866 (1), pp.65-68, 2006, 〈10.1063/1.2401463〉. 〈hal-01736075〉
  • L. Clavelier, C. Deguet, C. Le Royer, B. Vincent, J.-F. Damlencourt, et al.. Review of some critical aspects of Ge and GeOI substrates. Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown or Invalid Region. 3 (7), pp.789-805, 2006, 〈10.1149/1.2355874 〉. 〈hal-01736072〉
  • A.N. Larsen, A. Kanjilal, J.L. Hansen, P. Gaiduk, P. Normand, et al.. Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown or Invalid Region. 830, pp.263-267, 2005, 〈10.1557/PROC-830-D6.2〉. 〈hal-01736092〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, M. Respaud, et al.. Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown or Invalid Region. 830, pp.281-286, 2005, 〈10.1557/PROC-830-D6.6〉. 〈hal-01736087〉
  • Caroline Bonafos, Nikolay Cherkashin, Marzia Carrada, H. Coffin, Gérard Benassayag, et al.. Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown or Invalid Region. 830, pp.217-222, 2005, 〈10.1557/PROC-830-D5.2〉. 〈hal-01736091〉
  • O. Weber, Y. Bogumilowicz, T. Ernst, J.-M. Hartmann, F. Ducroquet, et al.. Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS. IEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. 2005, pp.137-140, 2005, 〈10.1109/IEDM.2005.1609288〉. 〈hal-01736083〉
  • Nikolay Cherkashin, P. Calvo, Fuccio Cristiano, B. De Mauduit, Alain Claverie. On the “Life” of {113} Defects. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown or Invalid Region. 810, pp.103-108, 2004, 〈10.1557/PROC-810-C3.7〉. 〈hal-01736093〉
  • W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani, et al.. Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions. Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown or Invalid Region. 1, pp.90-105, 2004, Advanced short-time thermal processing for Si-based CMOS devices II : proceedings of the international symposium. 〈hal-01736100〉
  • R. El Farhane, C. Laviron, Fuccio Cristiano, Nikolay Cherkashin, P. Morin, et al.. Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown or Invalid Region. 810, pp.21-27, 2004, 〈10.1557/PROC-810-C1.4〉. 〈hal-01736099〉
  • S. Paul, W. Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown or Invalid Region. 810, pp.215-221, 2004, 〈10.1557/PROC-810-C5.4〉. 〈hal-01736106〉
  • A. Claverie, Fuccio Cristiano, B. Colombeau, Xavier Hebras, P. Calvo, et al.. Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon. 2003, The Electrochemical Society Inc, Pennington, NJ, USA, pp.73, 2003. 〈hal-00146421〉
  • Victor M. Ustinov, Alexey E. Zhukov, Nikolay A. Maleev, Anton Y. Egorov, Alexey R. Kovsh, et al.. 1.3-\upmum edge- and surface-emitting quantum dot lasers grown on GaAs substrates. Peter Blood and Marek Osinski and Yasuhiko Arakawa. Physics and Simulation of Optoelectronic Devices X, 2002, Unknown, Unknown or Invalid Region. SPIE-Intl Soc Optical Eng, 2002, 〈10.1117/12.470541〉. 〈hal-01736120〉
  • V.M. Ustinov, Nikolay Cherkashin, N.A. Bert, A.F. Tsatsul'Nikov, A.R. Kovsh, et al.. High luminescence efficiency from GaAsN layers grown by MBE with RF nitrogen plasma source. Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications, 2001, Boston, United States. 692, pp.35-40, 2002, 〈10.1557/PROC-692-H1.10.1〉. 〈hal-01736117〉

Chapitre d'ouvrage2 documents

  • Martin Hÿtch, Florent Houdellier, Nikolay Cherkashin, Shay Reboh, Elsa Javon, et al.. Dark-Field Electron Holography for Strain Mapping. Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, 〈10.1002/9781118579022.ch4〉. 〈hal-01736026〉
  • Nikolay Cherkashin, Alain Claverie. Characterization of Process-Induced Defects. Alain Claverie ; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.165--198, 2013, 〈10.1002/9781118579022.ch7〉. 〈hal-01736027〉