Remi Dussart
6
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Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etchingJournal of Micromechanics and Microengineering, 2011, 21, pp.065015
Article dans une revue
hal-00655003v1
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In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching processApplied Physics Letters, 2009, 94, pp.071501. ⟨10.1063/1.3085957⟩
Article dans une revue
hal-00365892v1
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STiGer cryoetching process of silicon: passivation mechanisms, enhanced robustness and performancesPlasma Etch and Strip in Microelectronics 2nd International Workshop, Feb 2009, Louvain, Belgium
Communication dans un congrès
hal-00444370v1
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STiGer cryoetching process on silicon : results on performances for 0.8 um trenches17th International Colloquium on Plasma Processes, Jun 2009, Marseille, France
Communication dans un congrès
hal-00444466v1
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Formation of Columnar MicroStructures of silicon (CMS) in SF6/O2 plasma in cryogenic conditions17th International Colloquium on Plasma Processes, Jun 2009, Marseille, France
Communication dans un congrès
hal-00444402v1
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Study of SiOxFy passivation layer deposited in SiF4/O2 ICP dischargeAVS 55th International Symposium & Exhibition, Oct 2008, Boston, United States
Communication dans un congrès
hal-00444361v1
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