Remi Dussart
14
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Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etchingJournal of Micromechanics and Microengineering, 2011, 21, pp.065015
Article dans une revue
hal-00655003v1
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Neutral species in inductively coupled SF6/SiCl4 plasmasJournal of Physics D: Applied Physics, 2009, 42, pp.115206
Article dans une revue
hal-00396438v1
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Cryogenic etching of n-type silicon with p+ doped walls with the TGZM process through the Al/Si eutectic alloyMicroelectronic Engineering, 2009, 86, pp.2262. ⟨10.1016/j.mee.2009.04.002⟩
Article dans une revue
hal-00413753v1
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Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasmaApplied Physics Letters, 2008, 93, pp.131502. ⟨10.1063/1.2995988⟩
Article dans une revue
hal-00336392v1
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STiGer cryoetching process of silicon: passivation mechanisms, enhanced robustness and performancesPlasma Etch and Strip in Microelectronics 2nd International Workshop, Feb 2009, Louvain, Belgium
Communication dans un congrès
hal-00444370v1
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Formation of Columnar MicroStructures of silicon (CMS) in SF6/O2 plasma in cryogenic conditions17th International Colloquium on Plasma Processes, Jun 2009, Marseille, France
Communication dans un congrès
hal-00444402v1
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STiGer cryoetching process on silicon : results on performances for 0.8 um trenches17th International Colloquium on Plasma Processes, Jun 2009, Marseille, France
Communication dans un congrès
hal-00444466v1
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Study of SiOxFy passivation layer deposited in SiF4/O2 ICP dischargeAVS 55th International Symposium & Exhibition, Oct 2008, Boston, United States
Communication dans un congrès
hal-00444361v1
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SiOxFy film deposited by SiF4/O2 plasma on silicon at low temperature16th International Colloquium on Plasma Processes, Jun 2007, Toulouse, France
Communication dans un congrès
hal-00444198v1
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Neutral production in SF6/SiCl4 inductively coupled plasmas60th Gaseous Electronics Conference, Oct 2007, Arlington, United States
Communication dans un congrès
hal-00444252v1
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A robust passivation-enhanced cryogenic process used for deep silicon etchingAVS 54th International Symposium & Exhibition, Oct 2007, Seattle, United States
Communication dans un congrès
hal-00444264v1
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A study on SF6/SiCl4 inductively coupled plasma by mass spectrometry and optical emission spectroscopy16th International Colloquium on Plasma Processes, Jun 2007, France
Communication dans un congrès
hal-00444208v1
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SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105
Communication dans un congrès
hal-00444241v1
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Enhanced robustness of the cryogenic process for silicon deep etchingMicro- and Nano-Engineering, Sep 2007, Copenhague, Denmark
Communication dans un congrès
hal-00444248v1
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