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	SO2 passivating chemistry for silicon cryogenic deep etching Corinne Y. Duluard , Remi Dussart , Thomas Tillocher , Laurianne E. Pichon , Philippe Lefaucheux Plasma Sources Science and Technology, 2008, 17, pp.045008. ⟨10.1088/0963-0252/17/4/045008⟩ Article dans une revue hal-00349344v1

	A comparative study on O2 and SO2 passivating chemistry for silicon deep cryogenic etching Corinne Y. Duluard , Thomas Tillocher , Laurianne E. Pichon , Remi Dussart , Philippe Lefaucheux AVS 53rd International Symposium & Exhibition, Nov 2009, San Francisco, United States Communication dans un congrès hal-00442683v1
	Cryoetching of silicon for MEMS and microelectronic components Remi Dussart , Philippe Lefaucheux , Pierre Ranson , Laurianne E. Pichon , Corinne Y. Duluard 16th International Colloquium on Plasma Processes, Jun 2007, France Communication dans un congrès hal-00442662v1
	SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature Laurianne E. Pichon , Corinne Y. Duluard , Thomas Tillocher , Remi Dussart , Philippe Lefaucheux 18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105 Communication dans un congrès hal-00444241v1
	Enhanced robustness of the cryogenic process for silicon deep etching Remi Dussart , Thomas Tillocher , El-Houcine Oubensaid , Philippe Lefaucheux , Pierre Ranson Micro- and Nano-Engineering, Sep 2007, Copenhague, Denmark Communication dans un congrès hal-00444248v1
	A new generation of cryogenic processes for silicon deep etching Remi Dussart , Philippe Lefaucheux , Pierre Ranson , Laurianne E. Pichon , Corinne Y. Duluard 60th Gaseous Electronics Conference, Oct 2007, Arlington, United States Communication dans un congrès hal-00442668v1

Remi Dussart