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Remi Dussart

18
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Publications et communications

Publications

corinne-y-duluard

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

Corinne Y. Duluard , Pierre Ranson , Laurianne E. Pichon , Jeremy Pereira , El-Houcine Oubensaid
Journal of Micromechanics and Microengineering, 2011, 21, pp.065015
Article dans une revue hal-00655003v1

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process

J. Pereira , L.E. Pichon , R. Dussart , Christophe Cardinaud , C.Y. Duluard
Applied Physics Letters, 2009, 94 (7), pp.071501. ⟨10.1063/1.3085957⟩
Article dans une revue hal-00432322v1

Cryogenic etching of n-type silicon with p+ doped walls with the TGZM process through the Al/Si eutectic alloy

El-Houcine Oubensaid , Corinne Y. Duluard , Laurianne E. Pichon , B. Morillon , Mohamed Boufnichel
Microelectronic Engineering, 2009, 86, pp.2262. ⟨10.1016/j.mee.2009.04.002⟩
Article dans une revue hal-00413753v1

Neutral species in inductively coupled SF6/SiCl4 plasmas

Corinne Y. Duluard , Pierre Ranson , Laurianne E. Pichon , El-Houcine Oubensaid , Jeremy Pereira
Journal of Physics D: Applied Physics, 2009, 42, pp.115206
Article dans une revue hal-00396438v1

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Jeremy Pereira , Laurianne E. Pichon , Remi Dussart , Christophe Cardinaud , Corinne Y. Duluard
Applied Physics Letters, 2009, 94, pp.071501. ⟨10.1063/1.3085957⟩
Article dans une revue hal-00365892v1

Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

El-Houcine Oubensaid , Corinne Y. Duluard , Laurianne E. Pichon , Jeremy Pereira , Mohamed Boufnichel
Semiconductor Science & Technology, 2009, 24, pp.075022. ⟨10.1088/0268-1242/24/7/075022⟩
Article dans une revue hal-00400936v1

SO2 passivating chemistry for silicon cryogenic deep etching

Corinne Y. Duluard , Remi Dussart , Thomas Tillocher , Laurianne E. Pichon , Philippe Lefaucheux
Plasma Sources Science and Technology, 2008, 17, pp.045008. ⟨10.1088/0963-0252/17/4/045008⟩
Article dans une revue hal-00349344v1

STiGer cryoetching process of silicon: passivation mechanisms, enhanced robustness and performances

Jeremy Pereira , Hao Jiang , Laurianne E. Pichon , Remi Dussart , Corinne Y. Duluard
Plasma Etch and Strip in Microelectronics 2nd International Workshop, Feb 2009, Louvain, Belgium
Communication dans un congrès hal-00444370v1

A comparative study on O2 and SO2 passivating chemistry for silicon deep cryogenic etching

Corinne Y. Duluard , Thomas Tillocher , Laurianne E. Pichon , Remi Dussart , Philippe Lefaucheux
AVS 53rd International Symposium & Exhibition, Nov 2009, San Francisco, United States
Communication dans un congrès hal-00442683v1

Study of SiOxFy passivation layer deposited in SiF4/O2 ICP discharge

Jeremy Pereira , Laurianne E. Pichon , Remi Dussart , Corinne Y. Duluard , El-Houcine Oubensaid
AVS 55th International Symposium & Exhibition, Oct 2008, Boston, United States
Communication dans un congrès hal-00444361v1

A study on SF6/SiCl4 inductively coupled plasma by mass spectrometry and optical emission spectroscopy

Corinne Y. Duluard , Remi Dussart , Laurianne E. Pichon , Philippe Lefaucheux , Michel Puech
16th International Colloquium on Plasma Processes, Jun 2007, France
Communication dans un congrès hal-00444208v1

SiOxFy film deposited by SiF4/O2 plasma on silicon at low temperature

Remi Dussart , Laurianne E. Pichon , Corinne Y. Duluard , Philippe Lefaucheux , Mohamed Boufnichel
16th International Colloquium on Plasma Processes, Jun 2007, Toulouse, France
Communication dans un congrès hal-00444198v1

Neutral production in SF6/SiCl4 inductively coupled plasmas

Corinne Y. Duluard , Remi Dussart , Laurianne E. Pichon , El-Houcine Oubensaid , Philippe Lefaucheux
60th Gaseous Electronics Conference, Oct 2007, Arlington, United States
Communication dans un congrès hal-00444252v1

SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature

Laurianne E. Pichon , Corinne Y. Duluard , Thomas Tillocher , Remi Dussart , Philippe Lefaucheux
18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105
Communication dans un congrès hal-00444241v1

Enhanced robustness of the cryogenic process for silicon deep etching

Remi Dussart , Thomas Tillocher , El-Houcine Oubensaid , Philippe Lefaucheux , Pierre Ranson
Micro- and Nano-Engineering, Sep 2007, Copenhague, Denmark
Communication dans un congrès hal-00444248v1

Cryoetching of silicon for MEMS and microelectronic components

Remi Dussart , Philippe Lefaucheux , Pierre Ranson , Laurianne E. Pichon , Corinne Y. Duluard
16th International Colloquium on Plasma Processes, Jun 2007, France
Communication dans un congrès hal-00442662v1

A robust passivation-enhanced cryogenic process used for deep silicon etching

Laurianne E. Pichon , El-Houcine Oubensaid , Corinne Y. Duluard , Remi Dussart , Philippe Lefaucheux
AVS 54th International Symposium & Exhibition, Oct 2007, Seattle, United States
Communication dans un congrès hal-00444264v1

A new generation of cryogenic processes for silicon deep etching

Remi Dussart , Philippe Lefaucheux , Pierre Ranson , Laurianne E. Pichon , Corinne Y. Duluard
60th Gaseous Electronics Conference, Oct 2007, Arlington, United States
Communication dans un congrès hal-00442668v1