Remi Dussart
18
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Présentation
Publications et communications
Publications
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STiGer cryoetching process of silicon: passivation mechanisms, enhanced robustness and performancesPlasma Etch and Strip in Microelectronics 2nd International Workshop, Feb 2009, Louvain, Belgium
Communication dans un congrès
hal-00444370v1
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A comparative study on O2 and SO2 passivating chemistry for silicon deep cryogenic etchingAVS 53rd International Symposium & Exhibition, Nov 2009, San Francisco, United States
Communication dans un congrès
hal-00442683v1
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Study of SiOxFy passivation layer deposited in SiF4/O2 ICP dischargeAVS 55th International Symposium & Exhibition, Oct 2008, Boston, United States
Communication dans un congrès
hal-00444361v1
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A study on SF6/SiCl4 inductively coupled plasma by mass spectrometry and optical emission spectroscopy16th International Colloquium on Plasma Processes, Jun 2007, France
Communication dans un congrès
hal-00444208v1
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SiOxFy film deposited by SiF4/O2 plasma on silicon at low temperature16th International Colloquium on Plasma Processes, Jun 2007, Toulouse, France
Communication dans un congrès
hal-00444198v1
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Neutral production in SF6/SiCl4 inductively coupled plasmas60th Gaseous Electronics Conference, Oct 2007, Arlington, United States
Communication dans un congrès
hal-00444252v1
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SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105
Communication dans un congrès
hal-00444241v1
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Enhanced robustness of the cryogenic process for silicon deep etchingMicro- and Nano-Engineering, Sep 2007, Copenhague, Denmark
Communication dans un congrès
hal-00444248v1
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Cryoetching of silicon for MEMS and microelectronic components16th International Colloquium on Plasma Processes, Jun 2007, France
Communication dans un congrès
hal-00442662v1
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A robust passivation-enhanced cryogenic process used for deep silicon etchingAVS 54th International Symposium & Exhibition, Oct 2007, Seattle, United States
Communication dans un congrès
hal-00444264v1
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A new generation of cryogenic processes for silicon deep etching60th Gaseous Electronics Conference, Oct 2007, Arlington, United States
Communication dans un congrès
hal-00442668v1
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