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Nikolay Cherkashin

23

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nikolay-cherkashin
0000-0002-0322-0864
IdRef : 183426924

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fuccio-cristiano

	Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers François-Xavier Darras , Nikolay Cherkashin , Fuccio Cristiano , Emmanuel Scheid , Oleg Kononchuk Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩ Article dans une revue hal-01719500v1
	The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys Larbi Laânab , Amine Belafhaili , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie physica status solidi (c), 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩ Article dans une revue hal-01719497v1
	Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon Yang Qiu , Fuccio Cristiano , Karim Huet , Fulvio Mazzamuto , Giuseppe Fisicaro Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩ Article dans une revue hal-01659180v1
	Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation A. Belafhaili , L. Laânab , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩ Article dans une revue hal-01736024v1
	Formation and evolution of F nanobubbles in amorphous and crystalline Si S. Boninelli , G. Impellizzeri , S. Mirabella , F. Priolo , E. Napolitani Applied Physics Letters, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩ Article dans une revue hal-01736061v1
	Defects evolution and dopant activation anomalies in ion implanted silicon Fuccio Cristiano , Y. Lamrani , F. Severac , M. Gavelle , S. Boninelli Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩ Article dans une revue hal-01736079v1
	Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩ Article dans une revue hal-01736073v1
	Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩ Article dans une revue hal-01736076v1
	Structure determination of clusters formed in ultra-low energy high-dose implanted silicon Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩ Article dans une revue hal-01736085v1
	Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani Journal of The Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩ Article dans une revue hal-01736089v1
	On the “Life” of {113} Defects Nikolay Cherkashin , P. Calvo , Fuccio Cristiano , B. de Mauduit , Alain Claverie MRS Proceedings, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩ Article dans une revue hal-01736093v1
	Ion beam induced defects in crystalline silicon Fuccio Cristiano , Nikolay Cherkashin , Xavier Hebras , P. Calvo , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩ Article dans une revue hal-01736101v1
	Depth dependence of defect evolution and TED during annealing B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94 Article dans une revue hal-00140976v1
	Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions Fuccio Cristiano , Nikolay Cherkashin , P. Calvo , Y. Lamrani , Xavier Hebras Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩ Article dans une revue hal-01736096v1
	Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution P. Calvo , Alain Claverie , Nikolay Cherkashin , B. Colombeau , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩ Article dans une revue hal-01736098v1
	Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano MRS Proceedings, 2004, 810, ⟨10.1557/proc-810-c5.4⟩ Article dans une revue hal-01736104v1
	Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Nikolay Cherkashin Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩ Article dans une revue hal-01736110v1
	Clusters formation in ultralow-energy high-dose boron-implanted silicon Fuccio Cristiano , Xavier Hebras , Nikolay Cherkashin , Alain Claverie , W. Lerch Applied Physics Letters, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩ Article dans une revue hal-01736115v1

	Extended defects in ion-implanted si during nanosecond laser annealing Fuccio Cristiano , Y. Qiu , Eléna Bedel-Pereira , Karim Huet , Fulvio Mazzamuto Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩ Communication dans un congrès hal-01721156v1
	Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105 Communication dans un congrès hal-01736100v1
	Activation, diffusion and defect analysis of a spike anneal thermal cycle Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩ Communication dans un congrès hal-01736106v1
	Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions R. El Farhane , C. Laviron , Fuccio Cristiano , Nikolay Cherkashin , P. Morin Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩ Communication dans un congrès hal-01736099v1
	Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon Alain Claverie , Fuccio Cristiano , B. Colombeau , Xavier Hebras , P. Calvo 2003, pp.73 Communication dans un congrès hal-00146421v1