Accéder directement au contenu

Nicolas Rouger

5
Documents
Affiliations actuelles
  • 405657
Identifiants chercheurs
Site web
  • https://scholar.google.fr/citations?user=K1uNl9AAAAAJ

Présentation

My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters. As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities. I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.

Publications

jean-marc-blaquiere
Image document

Développement de fonctionnalités rapides, précises et intégrées CMOS, pour la commutation optimale et la protection interne des onduleurs à module SiC MOSFET

Anas Elboubkari , Matthieu Masson , Nicolas C. Rouger , Marc Cousineau , Frédéric Richardeau
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès hal-04157854v1
Image document

Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device

Yazan Barazi , Frédéric Richardeau , Nicolas C. Rouger , Jean-Marc Blaquière
32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France
Communication dans un congrès hal-03371958v1
Image document

Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiC

Yazan Barazi , François Boige , Nicolas C. Rouger , Jean-Marc Blaquière , Sébastien Vinnac
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France
Communication dans un congrès hal-03287704v1
Image document

‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability

Yazan Barazi , François Boige , Nicolas C. Rouger , Jean-Marc Blaquiere , Frédéric Richardeau
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩
Communication dans un congrès hal-02980827v1