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29 %

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161

Nicolas ROUGER


Journal articles38 documents

  • Marine Couret, Anne Castelan, Nazareno Donato, Florin Udrea, Julien Pernot, et al.. Analytic modeling of an hybrid power module based on diamond and SiC devices. Diamond and Related Materials, Elsevier, 2022, 124, pp.108936. ⟨10.1016/j.diamond.2022.108936⟩. ⟨hal-03346306⟩
  • Cédric Masante, Martin Kah, Clément Hébert, Nicolas C. Rouger, Julien Pernot. Non‐Volatile Photo‐Switch Using a Diamond pn Junction. Advanced Electronic Materials, Wiley, 2021, 8, pp.2100542. ⟨10.1002/aelm.202100542⟩. ⟨hal-03367390⟩
  • Yazan Barazi, Frédéric Richardeau, Nicolas Rouger, Jean-Marc Blaquière. Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device. Microelectronics Reliability, Elsevier, 2021, pp.114246. ⟨10.1016/j.microrel.2021.114246⟩. ⟨hal-03381405⟩
  • Cédric Masante, Nicolas C. Rouger, Julien Pernot. Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors. Journal of Physics D: Applied Physics, IOP Publishing, 2021, 54 (23), pp.233002. ⟨10.1088/1361-6463/abe8fe⟩. ⟨hal-03287047⟩
  • Gaëtan Perez, Aurélien Maréchal, Gauthier Chicot, Pierre Lefranc, Pierre-Olivier Jeannin, et al.. Diamond semiconductor performances in power electronics applications. Diamond and Related Materials, Elsevier, 2020, 110, pp.108154. ⟨10.1016/j.diamond.2020.108154⟩. ⟨hal-02988340⟩
  • Yazan Barazi, Nicolas C. Rouger, Frédéric Richardeau. Comparison between i g integration and v gs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors. Mathematics and Computers in Simulation, Elsevier, 2020, ⟨10.1016/j.matcom.2020.05.011⟩. ⟨hal-02972905⟩
  • Plinio Bau, Marc Cousineau, Bernardo Cougo, Frédéric Richardeau, Nicolas C. Rouger. CMOS Active Gate Driver for Closed-Loop d v /d t Control of GaN Transistors. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2020, 35 (12), pp.13322-13332. ⟨10.1109/TPEL.2020.2995531⟩. ⟨hal-02962708⟩
  • Cédric Masante, Julien Pernot, Aurélien Maréchal, Nicolas C. Rouger. High temperature operation of a monolithic bidirectional diamond switch. Diamond and Related Materials, Elsevier, 2020, 111, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩. ⟨hal-03017013⟩
  • Nicolas C. Rouger, Aurélien Maréchal. Design of Diamond Power Devices: Application to Schottky Barrier Diodes. Energies, MDPI, 2019, 12 (12), pp.2387. ⟨10.3390/en12122387⟩. ⟨hal-02377365⟩
  • Nazareno Donato, Nicolas C. Rouger, Julien Pernot, Giorgia Longobardi, Florin Udrea. Diamond power devices: State of the art, modelling and figures of merit. Journal of Physics D: Applied Physics, IOP Publishing, 2019, 53 (9), pp.093001. ⟨10.1088/1361-6463/ab4eab⟩. ⟨hal-02377372⟩
  • S. Lefebvre, B. Multon, Nicolas C. Rouger. Composants bipolaires (thyristors, triacs, GTO, GCT et BJT) : circuits de commande. Techniques de l'Ingénieur, 2018, pp.D3232-v2. ⟨hal-03800328⟩
  • S. Lefebvre, B. Multon, Nicolas C. Rouger. Caractéristiques des composants à semi-conducteur de puissance en vue de leur commande. Techniques de l'Ingénieur, 2018, pp.D3231-v2. ⟨hal-03800327⟩
  • T. Pham, J. Piñero, A. Maréchal, M. Gutierrez, F. Lloret, et al.. Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (5), pp.1830-1837. ⟨10.1109/TED.2018.2813084⟩. ⟨hal-01757885⟩
  • T. Pham, A. Maréchal, P. Muret, D. Eon, E. Gheeraert, et al.. Comprehensive electrical analysis of metal/Al 2 O 3 /O-terminated diamond capacitance. Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161523. ⟨10.1063/1.4996114⟩. ⟨hal-01701727⟩
  • Thanh-Toan Pham, C. Gutierrez, C. Masante, Nicolas C. Rouger, D. Eon, et al.. High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication. Applied Physics Letters, American Institute of Physics, 2018, 112 (10), pp.102103. ⟨10.1063/1.5018403⟩. ⟨hal-01757878⟩
  • Gaëtan Perez, Gauthier Chicot, Yvan Avenas, Pierre Lefranc, Pierre-Olivier Jeannin, et al.. Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter. Diamond and Related Materials, Elsevier, 2017, 78, pp.83-87. ⟨10.1016/j.diamond.2017.08.008⟩. ⟨hal-01590613⟩
  • Thanh-Toan Pham, Julien Pernot, Gaëtan Perez, David Eon, Etienne Gheeraert, et al.. Deep-depletion mode boron doped monocrystalline diamond metal oxide semiconductor field effect transistor. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2017, 38 (11), pp.1571-1574. ⟨10.1109/LED.2017.2755718⟩. ⟨hal-01617256⟩
  • T. Pham, Nicolas C. Rouger, C. Masante, G. Chicot, F. Udrea, et al.. Deep depletion concept for diamond MOSFET. Applied Physics Letters, American Institute of Physics, 2017, 111 (17), pp.173503. ⟨10.1063/1.4997975⟩. ⟨hal-01701733⟩
  • Nicolas Clément, Jean-Paul Rouger, R. Vafaei, N. To, L. Le, N. Corrao, et al.. Integrated isolation functions for driving power semiconductor devices. EPE Journal - European Power Electronics and Drives, Taylor & Francis, 2017, 26 (2), pp.58-70. ⟨10.1080/09398368.2016.1260259⟩. ⟨hal-02012343⟩
  • Khaled Driche, H. Umezawa, Nicolas Clément, Jean-Paul Rouger, Gauthier Chicot, Etienne Gheeraert. Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2017, 56 (4S), pp.04CR12. ⟨10.7567/JJAP.56.04CR12⟩. ⟨hal-01502587⟩
  • Nicolas Clément, Jean-Paul Rouger. Electric field distribution and voltage breakdown modeling for any PN junction. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, Emerald, 2016, 35 (1), pp.137--156. ⟨10.1108/COMPEL-12-2014-0330⟩. ⟨hal-02277768⟩
  • Gauthier Chicot, David Eon, Nicolas C. Rouger. Optimal drift region for diamond power devices. Diamond and Related Materials, Elsevier, 2016, 69, pp.68-73. ⟨10.1016/j.diamond.2016.07.006⟩. ⟨hal-01990401⟩
  • Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, et al.. Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors. physica status solidi (a), Wiley, 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩
  • Romain Grezaud, Francois Ayel, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crebier. A Gate Driver With Integrated Deadtime Controller. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2016, 31 (12), pp.8409--8421. ⟨10.1109/TPEL.2016.2517679⟩. ⟨hal-02277755⟩
  • Aurélien Maréchal, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Julien Pernot, Satoshi Koizumi, et al.. Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations. Diamond and Related Materials, Elsevier, 2014, 43, pp.34. ⟨10.1016/j.diamond.2014.01.009⟩. ⟨hal-00968208⟩
  • Nicolas Clément, Jean-Paul Rouger, L. Benaissa, Jean-Christophe Crébier, Julie Widiez, J. Defonseca, et al.. Packaging à l'échelle du wafer pour les convertisseurs multicellulaires. European Journal of Electrical Engineering, Lavoisier, 2013, 16, pp.3-4. ⟨hal-00988239⟩
  • Benoît Sarrazin, Nicolas Clément, Jean-Paul Rouger, Jean-Paul Ferrieux. Performance analysis of different power electronics structures for electric vehicles (EVs). European Journal of Electrical Engineering, Lavoisier, 2013, 16, pp.3-4. ⟨hal-00988234⟩
  • Xuan Hoa Nguyen, Jean-Louis Coulomb, Laurent Gerbaud, Jean-Christophe Crébier, Nicolas Clément, Jean-Paul Rouger. Application of progressive quadratic response surface method for an oscillation problem optimization. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, Emerald, 2012, 31 (3), pp.842 - 857. ⟨10.1108/03321641211209744⟩. ⟨hal-00706658⟩
  • Raha Vafaei, Nicolas Clément, Jean-Paul Rouger, Duc Ngoc To, Jean-Christophe Crébier. Experimental Investigation of an Integrated Optical Interface for Power MOSFET Drivers. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2012, 33 (2), page(s): 230 - 232 ISSN: 0741-3106. ⟨hal-00672877⟩
  • Didier Saury, Nicolas Clément, Jean-Paul Rouger, Francis Djanna, François Penot. Natural convection in an air-filled cavity: Experimental results at large Rayleigh numbers. International Communications in Heat and Mass Transfer, Elsevier, 2011, 38, pp.679-687. ⟨10.1016/j.icheatmasstransfer.2011.03.019⟩. ⟨hal-03037224⟩
  • Xuan Hoa Nguyen, Laurent Gerbaud, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Optimization of a power MOSFET And Its Monolithically integrated self-powering Circuits. International Journal of Applied Electromagnetics and Mechanics, IOS Press 2011, 37 (2-3), pp.159-171. ⟨hal-00790084⟩
  • R. Boeck, Nicolas Jaeger, Nicolas Clément, Jean-Paul Rouger, Lukas Chrostowski. Series-coupled silicon racetrack resonators and the Vernier effect: theory and measurement. Optics Express, Optical Society of America - OSA Publishing, 2010, pp.25151-25157. ⟨hal-00545395⟩
  • Dan Deptuck, Nicolas Clément, Jean-Paul Rouger, Nicolas Jaeger, Lukas Chrostowski. A trans-Canadian graduate course in silicon nanophotonics. Photons Technical Review, 2010, pp.29-33. ⟨hal-00608500⟩
  • Nicolas Clément, Jean-Paul Rouger, Lukas Chrostowski, R. Vafaei. Temperature Effects on Silicon-on-Insulator (SOI) Racetrack Resonators: A Coupled Analytic and 2-D Finite Difference Approach. Journal of Lightwave Technology, Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA), 2010, 28 (9), pp.1380-1391. ⟨hal-00485612⟩
  • Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Toward generic fully integrated gate driver power supplies. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2008, 23 (4). ⟨hal-00406629⟩
  • Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Stéphane Catellani. High Efficiency and Fully Integrated Self Powering Technique For Intelligent Switch Based Flyback Converters. IEEE Transactions on Industry Applications, Institute of Electrical and Electronics Engineers, 2008, 44 (4). ⟨hal-00406632⟩
  • Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Loss free gate driver unipolar power supply for high side power transistors. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2008, 23 (3). ⟨hal-00406642⟩
  • Jean-Christophe Crébier, Be Nguyen, Loïc Vincent, Nicolas Clément, Jean-Paul Rouger, Laurent Aubard, et al.. Promotion d'une approche système dans l'intégration monolithique pour semi-conducteurs de puissance. Revue Internationale de Génie Electrique, Numéro spécial Conversion de l'énergie et intégration en électronique de puissance, 2007, 10 (5). ⟨hal-00284482⟩

Conference papers113 documents

  • Marine Couret, Anne Castelan, Juliette Letellier, Khaled Driche, Julien Pernot, et al.. Electro-thermal simulations of a diamond MOSFET. 26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium. ⟨hal-03647967⟩
  • Martin Kah, Cédric Masante, Fabrice Donatini, Gwenolé Jacopin, Nicolas C. Rouger, et al.. Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor. 26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium. ⟨hal-03738021⟩
  • Nicolas C. Rouger. Diamond Power Devices: Benchmarks, Optimal Design and Integration in Power Converters. IEEE International Workshop on Integrated Power Packaging IWIPP 2022, Aug 2022, Grenoble, France. ⟨hal-03768884⟩
  • Martin Kah, Cédric Masante, Fabrice Donatini, Gwenolé Jacopin, Nicolas C. Rouger, et al.. Commutation time of non-volatile photo-switch based on diamond Junction Field Effect Transistor. 15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan. ⟨hal-03738050⟩
  • Cédric Masante, Martin Kah, Clément Hébert, Nicolas C. Rouger, Julien Pernot. How a diamond pn junction can be used to fabricate a non-volatile photo-switch?. 26th Hasselt Diamond Workshop - SBDD XXVI, Mar 2022, Hasselt, Belgium. ⟨hal-03738014⟩
  • Nicolas C. Rouger. Optimal Design of Diamond Field Effect Transistors Towards a Key Milestone for Diamond Power Electronics. MRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu & Virtual, United States. ⟨hal-03692793⟩
  • Cédric Masante, Martin Kah, Clément Hébert, Nicolas C. Rouger, Julien Pernot. Non-volatile photo-switch using a diamond pn junction diamond. 15th International Conference on New Diamond and Nano Carbons NDNC 2022, Jun 2022, Kanazawa, Japan. ⟨hal-03738034⟩
  • Marine Couret, Nicolas C. Rouger, Khaled Driche, Juliette Letellier, Anne Castelan, et al.. Design of a Source Field-Plated Deep-Depletion Diamond MOSFETs. MRS Spring 2022 - Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, May 2022, Honolulu, United States. ⟨hal-03692802⟩
  • Yazan Barazi, Frédéric Richardeau, Nicolas C. Rouger, Jean-Marc Blaquière. Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device. 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France. ⟨hal-03371958⟩
  • Plinio Bau, Marc Cousineau, Bernardo Cougo, Frédéric Richardeau, Nicolas C. Rouger. Contrôle ultra-rapide et intégré de dv/dt en boucle fermée lors de l’amorçage de transistors à semiconducteurs grand-gap. Symposium de Génie Electrique 2021, Jul 2021, Nantes, France. ⟨hal-02966771⟩
  • Yazan Barazi, François Boige, Nicolas C. Rouger, Jean-Marc Blaquière, Sébastien Vinnac, et al.. Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiC. SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6 - 8 JUILLET 2021, NANTES, FRANCE, Jul 2021, Nantes, France. ⟨hal-03287704⟩
  • Martin Kah, Cédric Masante, Salma El-Messaoudi, Julien Pernot, Nicolas C. Rouger. Diamond Inter-Digited JFET for Power Electronic Devices. 31st International Conference on Diamond and Carbon Materials, Sep 2021, Virtual Meeting (tentative: Palma), Spain. ⟨hal-03375284⟩
  • Nicolas C. Rouger, Damien Risaletto, Pierre Lefranc, Pierre-Olivier Jeannin, Hugo Cagnol, et al.. Towards the implementation of diamond power devices in power converters and measurements of their switching losses. MRS Spring Meeting 2021, Apr 2021, Seattle, United States. ⟨hal-03289135⟩
  • Nicolas C. Rouger, Anne Castelan, Idriss Nachete, Nazareno Donato, Florin Udrea, et al.. Hybrid power module with Diamond and SiC power devices: modeling, performances and challenges. MRS Spring Meeting 2021, Apr 2021, Seattle, United States. ⟨hal-03289137⟩
  • Plinio Bau, Marc Cousineau, Bernardo Cougo, Frédéric Richardeau, Nicolas C. Rouger. Modeling and Design of High Bandwidth Feedback Loop for dv/dt Control in CMOS AGD for GaN. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.106-109, ⟨10.1109/ISPSD46842.2020.9170106⟩. ⟨hal-02920181⟩
  • Yazan Barazi, Nicolas C. Rouger, Frédéric Richardeau. CMOS Gate Driver with fast short circuit protection for SiC MOSFETs. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual), Austria. pp.94-97, ⟨10.1109/ISPSD46842.2020.9170164⟩. ⟨hal-02920189⟩
  • Yazan Barazi, François Boige, Nicolas C. Rouger, Jean-Marc Blaquiere, Frédéric Richardeau. ‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability. 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩. ⟨hal-02980827⟩
  • Nicolas C. Rouger, Yazan Barazi, Marc Cousineau, Frédéric Richardeau. Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual ), Austria. pp.278-281, ⟨10.1109/ISPSD46842.2020.9170181⟩. ⟨hal-02920129⟩
  • Nicolas C. Rouger. Optical control of power devices: combining photonics, CMOS integration and monolithic integration for the next generation of power converters. 2020 International Topical Meeting on Microwave Photonics (MWP), Nov 2020, Matsue, Japan. ⟨10.23919/MWP48676.2020⟩. ⟨hal-03288672⟩
  • Bau Plinio, Marc Cousineau, Bernardo Cogo, Frédéric Richardeau, Vinnac Sébastien, et al.. Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors. 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩. ⟨hal-02157332⟩
  • Barazi Yazan, Nicolas C. Rouger, Frédéric Richardeau. Comparison between ig Integration and vgs Derivation methods dedicated to fast Short-Circuit 2D-Diagnosis for Wide Band Gap Power Devices. ELECTRIMACS 2019, May 2019, Salerno, Italy. ⟨hal-02180892⟩
  • Cédric Masante, Julien Pernot, Juliette Letellier, David Eon, Nicolas C. Rouger. 175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩. ⟨hal-02377367⟩
  • Cédric Masante, Khaled Driche, Thanh-Toan Pham, Hitoshi Umezawa, Gaetan Perez, et al.. Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissance. Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France. ⟨hal-02981917⟩
  • Gaëtan Perez, Juliette Letellier, Aurélien Maréchal, David Eon, Gauthier Chicot, et al.. Diamond Schottky barrier diodes for power electronics applications. ECCE 2018, Sep 2018, Portland, United States. ⟨hal-01885530⟩
  • Plinio Bau, Marc Cousineau, Bernardo Cougo, Frédéric Richardeau, Davy Colin, et al.. A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors. 2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jul 2018, Prague, France. pp.105-108, ⟨10.1109/PRIME.2018.8430331⟩. ⟨hal-02335492⟩
  • Gaetan Perez, Juliette Letellier, Aurélien Maréchal, David Eon, Gauthier Chicot, et al.. Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisation. Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France. ⟨hal-02981846⟩
  • Jean-Christophe Crébier, Van-Sang Nguyen, Nicolas Clément, Jean-Paul Rouger, Xavier Saboret, Pierre Lefranc, et al.. Double chips low side - high side configurable full gate driver circuits for a high speed inverter leg. CIPS 2018 10th International Conference on Integrated Power Electronics Systems, 2018, Mar 2018, Stuttgart, Germany. ⟨hal-01743621⟩
  • Kremena Vladimirova, Julie Widiez, Bastien Letowski, Pierre Perreau, Gregory Enyedi, et al.. Solderless Leadframe Assisted Wafer-Level Packaging Technology for Power Electronics. 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, France. pp.1251-1257, ⟨10.1109/ECTC.2018.00193⟩. ⟨cea-02185324⟩
  • Gauthier Chicot, David Eon, Nicolas Clément, Jean-Paul Rouger. Operating temperature consideration in the trade-off for designing drift region of diamond power devices. Hasselt Diamond Workshop 2017 - SBDD XXII, Mar 2017, Hasselt, Belgium. ⟨hal-01590460⟩
  • Gaëtan Perez, Pierre Lefranc, Pierre-Olivier Jeannin, David Eon, Nicolas Clément, Jean-Paul Rouger. Parallel and interleaved structures for diamond Schottky diodes. EPE 2017 (ECCE Europe), Sep 2017, Varsovie, Poland. ⟨hal-01590604⟩
  • Gaetan Perez, Jacques Letellier, Aurélien Maréchal, Pierre-Olivier Jeannin, Pierre Lefranc, et al.. Diamond Schottky diodes interactions in power electronics application. MRS 2017 Fall Meeting, Nov 2017, Boston, United States. ⟨hal-01655900⟩
  • Thanh-Toan Pham, Julien Pernot, C. Masante, D. Eon, E. Gheeraert, et al.. 200V, 4MV/cm lateral diamond MOSFET. 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩. ⟨hal-01701734⟩
  • Gauthier Chicot, David Eon, Nicolas Clément, Jean-Paul Rouger. Operating temperature as a trade-off parameter for designing drift region of diamond power devices. 28th International Conference on Diamond and Carbon Materials, Sep 2017, Göteborg, Sweden. ⟨hal-01590470⟩
  • Nicolas Clément, Jean-Paul Rouger, Thanh-Toan Pham, Gaetan Perez, Masante Cédric, Pierre Lefranc, et al.. Diamond Devices for Power Electronics. 11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia. ⟨hal-01590457⟩
  • David Eon, Julien Pernot, Aboulaye Traoré, Nicolas Clément, Jean-Paul Rouger, Etienne Gheeraert. La diode Schottky en diamant : le présent et le futur. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361578⟩
  • Nicolas Clément, Jean-Paul Rouger, Davy Colin, Jean-Christophe Crébier. CMOS gate drivers with integrated optical interfaces for extremely fast power transistors . ESARS-ITEC 2016, Nov 2016, Toulouse, France. ⟨hal-01413331⟩
  • Bastien Letowski, Julie Widiez, Marc Rabarot, William Vandendaele, Bruno Imbert, et al.. Towards vertical power device 3D packaging on 8-inch wafer. Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic. ⟨hal-01362296⟩
  • Nicolas Clément, Jean-Paul Rouger, D. Eon, Gaëtan Perez, Pierre-Olivier Jeannin, Pierre Lefranc, et al.. Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor. 2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States. ⟨hal-01306775⟩
  • Nicolas Clément, Jean-Paul Rouger. Diamond power electronics : from device simulation to implementation in power converters. 2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States. ⟨hal-01306761⟩
  • Gauthier Chicot, David Eon, Nicolas Clément, Jean-Paul Rouger. Trade-off for optimizing drift region of diamond power devices . E-MRS 2016, Sep 2016, Varsovie, Poland. ⟨hal-01370942⟩
  • Van-Sang Nguyen, Thanh Long Le, Farshid Sarrafin_ardebili, Duc Ngoc To, Davy Colin, et al.. Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devices. Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic. ⟨hal-01362327⟩
  • Van-Sang Nguyen, Thanh Long Le, Farshid Sarrafin_ardebili, Duc Ngoc To, Davy Colin, et al.. Contributions aux circuits de commande gate driver dédiés à la haute température et aux très fortes vitesses de commutation. Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France. ⟨hal-01333015⟩
  • Nicolas Clément, Jean-Paul Rouger. Optical Gate Control of Power Transistors. IEICE-NPERC-J Joint Symposium on Smart Applications of Photonics to New Generation Power Electronics, Dec 2016, Tokyo, Japan. ⟨hal-01420808⟩
  • Nicolas Clément, Jean-Paul Rouger, Thanh Long Le, Davy Colin, Jean-Christophe Crébier. CMOS SOI gate driver with integrated optical supply and optical driving for fast power transistors. Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic. ⟨hal-01362313⟩
  • Gauthier Chicot, David Eon, Nicolas Clément, Jean-Paul Rouger. Optimization and design of diamond High Voltage power devices . E-MRS Spring meeting 2016 , May 2016, Lille, France. ⟨hal-01313983⟩
  • Gaëtan Perez, Nicolas Clément, Jean-Paul Rouger, Pierre Lefranc, Pierre-Olivier Jeannin, Yvan Avenas, et al.. Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter . ICDCM2016 - International Conference on Diamond and Carbon Materials, Sep 2016, Montpellier, France. ⟨hal-01366471⟩
  • Nicolas Clément, Jean-Paul Rouger, Aurélien Maréchal, Gauthier Chicot, Gaetan Perez, Thanh-Toan Pham, et al.. Simulation numérique et caractérisation de composants de puissance en diamant. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361596⟩
  • Van-Sang Nguyen, Thanh-Long Le, Farshid Sarrafin-Ardebili, Davy Colin, Ngoc-Duc To, et al.. Contributions aux circuits de « gate-driver » dédiés aux transistors de puissance à forte vitesse de commutation dans un environnement haute temperature. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361602⟩
  • Davy Colin, Nicolas Clément, Jean-Paul Rouger. High Speed Optical Gate Driver for Wide Band Gap Power Transistors . Energy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States. ⟨hal-01375801⟩
  • Gauthier Chicot, David Eon, Nicolas Clément, Jean-Paul Rouger. Optimal design of unipolar diamond power devices: drift region and channel dose. Hasselt Diamond Workshop 2016 - SBDD XXI, Mar 2016, Hasselt, Belgium. ⟨hal-01288495⟩
  • Bastien Letowski, Julie Widiez, Nicolas Clément, Jean-Paul Rouger, Marc Rabarot, William Vandendaele, et al.. Mise en place d'un packaging 3D collectif de composants de puissance à structure verticale. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361603⟩
  • Gauthier Chicot, David Eon, Nicolas Clément, Jean-Paul Rouger. Trade-off for optimizing drift region of diamond power devices. ICDCM (International Conference on Diamond and Carbon Materials) 2016, Sep 2016, Montpellier, France. ⟨hal-01370952⟩
  • Nicolas Clément, Jean-Paul Rouger. CMOS Gate Drivers for High Speed - High Voltage Wide Bandgap Power Switches. CMOS Emerging Technologies Research 2015, May 2015, Vancouver, Canada. ⟨hal-01159160⟩
  • Thanh Long Le, Davy Colin, Jean-Christophe Crébier, Nicolas Clément, Jean-Paul Rouger. CMOS Gate Driver with Integrated Optical receiver for Power Electronics applications. ECCE Europe 2015, Sep 2015, Genève, Switzerland. ⟨hal-01208262⟩
  • Nicolas Clément, Jean-Paul Rouger, Aurélien Maréchal, Thanh Long Le, Davy Colin, Julien Pernot, et al.. Enabling high switching speed for diamond power transistors. 3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France. ⟨hal-01176598⟩
  • Nicolas Clément, Jean-Paul Rouger, Julie Widiez, L. Benaissa, B. Imbert, P. Gondcharton, et al.. 3D Packaging for vertical power devices. CIPS 2014, Feb 2014, Nuremberg, Germany. ⟨hal-00989640⟩
  • Nicolas Clément, Jean-Paul Rouger. Challenges and benefits of microelectronics for power electronics: from integrated optical driving to optimized power semiconductor switches. Ph. D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on, 2014, Grenoble, France. pp.1--1. ⟨hal-02338452⟩
  • Nicolas Clément, Jean-Paul Rouger, Raha Vafaei, Duc Ngoc To, Long Thanh Le, Nicolas Corrao, et al.. Transfert isolé des signaux de commande dans le contexte de l'intégration pour les composants actifs d'électronique de puissance. Symposium de Génie Électrique 2014, Jul 2014, Cachan, France. ⟨hal-01065361⟩
  • Thanh Long Le, Jean-Christophe Crébier, Nicolas Clément, Jean-Paul Rouger. CMOS Integrated Optical Isolator for Power Transistor Gate Driver. IECON 2014, Oct 2014, Dallas, United States. ⟨hal-01084058⟩
  • Aurélien Maréchal, Gauthier Chicot, Nicolas Clément, Jean-Paul Rouger, Julien Pernot, Etienne Gheeraert. Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamond. SBDD 2014, Feb 2014, Hasselt, Belgium. ⟨hal-00989688⟩
  • Duc Ngoc To, Nicolas Clément, Jean-Paul Rouger, Jean-Daniel Arnould, N. Corrao, Jean-Christophe Crébier, et al.. Integrated gate driver circuits with an ultra-compact design and high level of galvanic isolation for power transistors. International Conference on Integrated Power Electronics Systems (CIPS 2014), Feb 2014, Nuremberg, Germany. ISBN 978-3-8007-3578-5, pp 348-353. ⟨hal-00957347⟩
  • Nicolas Clément, Jean-Paul Rouger. Challenges of diamond devices for power electronics. The 2nd Japan - France CVD diamond power device workshop, 2014, Kyushu, Japan. ⟨hal-02338451⟩
  • Nicolas Clément, Jean-Paul Rouger, J. Widiez, L. Benaissa, B. Imbert, P. Gondcharton, et al.. Advanced Wafer Level Packaging Technology by Layer Transfer Engineering : Application to 3D Packaging for vertical power devices. From nano to macro power electronics and packaging international workshop, Oct 2014, Tours, France. ⟨hal-01092423⟩
  • Duc Ngoc To, Nicolas Clément, Jean-Paul Rouger, Jean-Daniel Arnould, N. Corrao, Yves Lembeye. Modeling and characterization of 0.35 μm CMOS coreless transformer for gate drivers. ISPSD 2014, Apr 2014, Hawai, United States. ⟨hal-00989648⟩
  • Romain Grezaud, François Ayel, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crebier. Méthodes spécifiques de caractérisation et de commande de composants grand gap en environnement variable. Symposium de Génie Électrique 2014, Jul 2014, Cachan, France. ⟨hal-01065402⟩
  • Aurélien Maréchal, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Julien Pernot, S. Koizumi, et al.. Parameter adjustement for diamond electronic devices simulation. XVIIIth SBDD 2013, 2013, Hasselt, Belgium. ⟨hal-00989542⟩
  • Romain Grézaud, François Ayel, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. An Adaptive Output Impedance Gate Drive for Safer and More Efficient Control of Wide Bandgap Devices. IEEE WipDa 2013, 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695564⟩. ⟨hal-00988293⟩
  • Aurélien Maréchal, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Julien Pernot, S. Koizumi, et al.. Diamond bipolar device simulation. IEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States. ⟨hal-00911320⟩
  • Raha Vafaei, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Performance Measurements of an Optical Detector Designed for Monolithic Integration with a Power VDMOS. I2MTC 2013, May 2013, Minnéapolis, United States. ⟨hal-00828612⟩
  • Aurélien Maréchal, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Julien Pernot, S. Koizumi, et al.. Models and parameters study for diamond electronic devices simulations. 74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan. ⟨hal-00989536⟩
  • R. Grezaud, François Ayel, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. A Specific Switching Characterization Method for Evaluation of Operating Point and Temperature Impacts on Wide Bandgap Devices. IEEE WipDa 2013, Oct 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695573⟩. ⟨hal-00988288⟩
  • Nicolas Clément, Jean-Paul Rouger, L. Benaissa, Julie Widiez, B. Imbert, Victor Gaude, et al.. True 3D Packaging Solution for Stacked Vertical Power Devices. The 25th International Symposium on Power Semiconductor Devices and ICs. (ISPSD 2013), May 2013, Kanazawa, Japan. pp.97-100. ⟨hal-00843807⟩
  • Trung Hieu Trinh, Nicolas Clément, Jean-Paul Rouger, Yves Lembeye, Jean-Christophe Crébier. Convertisseur intégré pour les applications réseaux de micro convertisseurs. Electronique de Puissance du Futur 2012, Jul 2012, France. ⟨hal-00716729⟩
  • Nicolas Clément, Jean-Paul Rouger, Raha Vafaei, Duc Ngoc To, Jean-Christophe Crébier. Etude expérimentale d'un étage intégré d'isolation par voie optique pour transistors de puissance. Electronique de Puissance du Futur 2012, Jul 2012, France. ⟨hal-00716725⟩
  • Nicolas Clément, Jean-Paul Rouger, L. Benaissa, Jean-Christophe Crébier, Julie Widiez, J. Defonseca, et al.. Packaging à l'échelle du wafer pour les convertisseurs multicellulaires. Electronique de Puissance du Futur 2012, Jul 2012, France. ⟨hal-00716747⟩
  • Trung Hieu Trinh, Jean-Christophe Crébier, Nicolas Clément, Jean-Paul Rouger, Yves Lembeye. Integration of Dual Active Bridge DC/DC Converters for Converters Networks applications. PCIM 2012, May 2012, Nuremberg, Germany. ⟨hal-00696167⟩
  • Christophe Gineste, Thierry Bouchet, Olivier Gatti, Jean-Christophe Crébier, Patrick Austin, et al.. Vers une filière et un support de conception EDA (Electronic Design Automation) des fonctions de coupure spécifiques. Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France. 4p. ⟨hal-00716857⟩
  • L. Benaissa, Nicolas Clément, Jean-Paul Rouger, Julie Widiez, Jean-Christophe Crébier, J. Dafonseca, et al.. A vertical power device conductive assembly at wafer level using direct bonding technology. In Power Semiconductor Devices and ICs (ISPSD), Jun 2012, France. pp.77-80. ⟨hal-00820244⟩
  • Trung Hieu Trinh, Thanh Hai Phung, Jean-Christophe Crébier, Nicolas Clément, Jean-Paul Rouger, Yves Lembeye. Integrated Low Power Low Voltage Isolated Switch Mode Power Supply. In Industrial Electronics CONference, IEEE IECON 2012, Oct 2012, France. pp.500-505. ⟨hal-00820246⟩
  • Benoît Sarrazin, Nicolas Clément, Jean-Paul Rouger, Jean-Paul Ferrieux. Evaluation des Performances d'une Chaîne de Traction pour Véhicule Electrique pour Différentes Structures d'Electronique de Puissance. Electronique de Puissance du Futur 2012, Jul 2012, France. ⟨hal-00716734⟩
  • Trung Hieu Trinh, Jean-Christophe Crébier, Nicolas Clément, Jean-Paul Rouger, Yves Lembeye. An Integration of Dual Active Bridge DC/DC Converters Used in Micro Converters Networks. Power Electronics/Intelligent Motion/Power Quality PCIM Europe Conference 2012, May 2012, Nuremberg, Germany. ⟨hal-00706753⟩
  • Lyubomir Kerachev, Kremena Vladimirova, Victor Gaude, Julie Widiez, Jean-Christophe Crébier, et al.. Implementation of monolithic multiple vertical power diodes in a multiphase converter. Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE, Feb 2012, Orlando, United States. pp.169-175. ⟨hal-00706742⟩
  • Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Olivier Lesaint. Integrated Low Power and High Bandwidth Optical Isolator for Monolithic Power MOSFETs Driver. Proceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.356-359. ⟨hal-00599257⟩
  • Timothé Simonot, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Victor Gaude, Irène Pheng. A novel Power System in Package with 3D chip on chip interconnections of the power transistor and its gate driver. Proceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.328-331. ⟨hal-00599317⟩
  • Benoît Sarrazin, Nicolas Clément, Jean-Paul Rouger, Jean-Paul Ferrieux. Benefits of Cascaded Inverters for Electrical Vehicles'Drive-Trains. ECCE, Sep 2011, Phoenix, United States. ⟨hal-00728008⟩
  • Timothé Simonot, Xuan Hoa Nguyen, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Abdelhakim Bourennane, et al.. Towards reduced threshold voltages for vertical power Mosfet transistors. ISIE 2011, Jun 2011, Gdansk, Poland. ⟨hal-00607324⟩
  • Benoît Sarrazin, Nicolas Clément, Jean-Paul Rouger, Jean-Paul Ferrieux, Jean-Christophe Crébier. CASCADED INVERTERS FOR ELECTRICAL VEHICLES: TOWARDS A BETTER MANAGEMENT OF TRACTION CHAIN FROM THE BATTERY TO THE MOTOR?. ISIE 2011, Jun 2011, Gdansk, Poland. ⟨hal-00606381⟩
  • Timothé Simonot, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Jean-Daniel Arnould. Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip. Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip, May 2011, San Diego, United States. pp.360-363. ⟨hal-00599260⟩
  • T. Simonot, Jean-Daniel Arnould, Nicolas Clément, Jean-Paul Rouger, J.-C. Crebier. "Design and characterization of an integrated coreless transformer onto a CMOS gate driver for gate signal insulation purposes". IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2011, San Diego, United States. ⟨hal-01068882⟩
  • Timothé Simonot, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Design and characterization of an integrated CMOS gate driver for vertical power MOSFETs. ECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States. ⟨hal-00520085⟩
  • Timothé Simonot, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Conception, intégration 3D et caractérisation d'un circuit de commande CMOS pour transistors de puissance. Électronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France. ⟨hal-00498844⟩
  • Timothé Simonot, Nicolas Clément, Jean-Paul Rouger, Xuan Hoa Nguyen, Jean-Christophe Crébier, Abdelhakim Bourennane, et al.. Tension de seuil réduite pour composants de puissance à grille: Intérêts et conséquences.. Électronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France. 4p. ⟨hal-00498857⟩
  • Xuan Hoa Nguyen, Laurent Gerbaud, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Flexible Parameter Identification Tool for semiconductor Device Design. XI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3. ⟨hal-00520042⟩
  • Lukas Chrostowski, Nicolas Clément, Jean-Paul Rouger, Dan Deptuck, Nicolas Jaeger. Silicon Nanophotonics Fabrication: an Innovative Graduate Course. The 17th International Conference on Telecommunications, Apr 2010, Doha, Qatar. ⟨hal-00476550⟩
  • Xuan Hoa Nguyen, Laurent Gerbaud, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. optimization of a power MOSFET And Its Monolithically integrated self-powering Circuits. XI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3. ⟨hal-00520051⟩
  • Nicolas Jaeger, Dan Deptuck, Nicolas Clément, Jean-Paul Rouger, Lukas Chrostowski. Current Trends in Silicon Photonics in the Context of Higher Education. CMOS Emerging Technologies Workshop 2010, 2010, Canada. ⟨hal-00608293⟩
  • Timothé Simonot, Jean-Christophe Crébier, Nicolas Clément, Jean-Paul Rouger, Victor Gaude. 3D hybrid integration and functional interconnection of a power transistor and its gate driver. ECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States. ⟨hal-00520083⟩
  • T. Tasmin, Nicolas Clément, Jean-Paul Rouger, G. Xia, Lukas Chrostowski, Nicolas Jaeger. Design of a 1550nm SiGe/Si quantum-well optical modulator. Proceedings of SPIE Photonics North, 2010, United States. ⟨hal-00545393⟩
  • Didier Saury, Nicolas Clément, Jean-Paul Rouger, Francis Djanna, François Penot. sur la cavité différentiellement chauffée : étude expérimentale des écoulements de convection naturelle à grand nombre de Rayleigh. IX COLLOQUE INTERUNIVERSITAIRE FRANCO-QUEBECOIS - CIFQ 2009, May 2009, Lille, France. ⟨hal-00424325⟩
  • Didier Saury, Nicolas Clément, Jean-Paul Rouger, Francis Djanna, François Penot. Sur la thermique et la dynamique de la convection naturelle à grand nombre de Rayleigh dans des cavités différentiellement chauffées. 14EME JOURNEES INTERNATIONALES DE THERMIQUE - JITH 2009, Mar 2009, DJERBA, Tunisie. ⟨hal-00424326⟩
  • Didier Saury, Nicolas Clément, Jean-Paul Rouger, Francis Djanna, François Penot. Mesures de vitesse, de température et du flux thermique en convection naturelle en espace confiné. CONGRES SFT 2009, May 2009, Vannes, France. pp.129-134. ⟨hal-00424332⟩
  • D. Saury, Nicolas Clément, Jean-Paul Rouger, F. Djanna, F. Penot. Le thermosiphon vertical à grands nombres de Rayleigh, principes et caractérisation expérimentale.. Congrès Français de Thermique 2008, Jun 2008, TOULOUSE, France. pp.97-102. ⟨hal-00292800⟩
  • F. Penot, Nicolas Clément, Jean-Paul Rouger. Experimental investigation of natural convection of air in a differentially heated cavity partitioned with a lintel. 5th European Thermal Sciences Conference, May 2008, Eindhoven, Netherlands. pp.1-8. ⟨hal-00289925⟩
  • Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Integrated Photoreceiver For An Isolated Control Signal Transfert In Favour Of Power Transistors. IEEE 20th International Symposium on Power Semiconductor Devices and ICs (ISPSD'08), May 2008, Orlando, United States. pp. 213-216. ⟨hal-00282182⟩
  • Francis Djanna, Nicolas Clément, Jean-Paul Rouger, Didier Saury, F. Penot. Stratification thermique de l'air dans une cavité en convection naturelle à grand nombre de Rayleigh.. Congrès Français de Thermique 2008, Jun 2008, TOULOUSE, France. pp.169-174. ⟨hal-00292658⟩
  • Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Hung Tran Manh, Christian Schaeffer. Toward Integrated Gate Driver Supplies : Practical and Analytical Analysis of High-Voltage Capabilities. Power Electronics Specialists Conference PESC 08, Jun 2008, Rhodes, Greece. IEEE pesc conference, pp 873-879. ⟨hal-00292642⟩
  • Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Intégration Monolithique d'un Récepteur Optique au sein de Transistors de Puissance : Enjeux et Possibilités. EPF 2008 XIIème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France. pp.141-146. ⟨hal-00296716⟩
  • Didier Saury, Nicolas Clément, Jean-Paul Rouger, Francis Djanna, François Penot. Caractérisation des écoulements de convection naturelle turbulente à grand nombre de Rayleigh. Congrès Francophone des Techniques Laser, CFTL 2008, Sep 2008, Poitiers, France. pp.167-174. ⟨hal-00418269⟩
  • Nicolas Clément, Jean-Paul Rouger, Patrice Joubert, François Penot. Caractérisation dynamique et thermique de la convection naturelle turbulente dans une cavité différentiellement chauffée comportant un linteau.. Congrès Français de Thermique, SFT 2007, May 2007, Ile des Embiez, France. pp.253-258. ⟨hal-00293357⟩
  • Laurent Aubard, Jean-Christophe Crébier, Radoslava Mitova, Nicolas Clément, Jean-Paul Rouger, Christian Schaeffer. Simulation, Design and Testing of Integrated Power Supply For Insulated Gate Transistors. IEEE ISPSD'06, Jun 2006, Naples, Italy. ⟨hal-00193829⟩
  • Nicolas Clément, Jean-Paul Rouger, Stéphane Catellani, Jean-Christophe Crébier. High Efficiency and Fully Integrated Self Powering Technique For VIPer Based Flyback Converters. IAS-IEEE Conference, Oct 2006, Tampa, Floride, United States. ⟨hal-00198345⟩
  • Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Laurent Aubard, Christian Schaeffer. Toward generic fully integrated gate driver power supplies. IEEE IECON 2006, Nov 2006, Paris, France. ⟨hal-00199403⟩
  • Laurent Aubard, Jean-Christophe Crébier, Jean-Louis Sanchez, Nicolas Clément, Jean-Paul Rouger, Florence Capy, et al.. Nouvelles fonctions de commutation de puissance intégrées sur Silicium. Journées GdR, Oct 2005, Lyon, France. ⟨hal-00188228⟩

Poster communications1 document

  • Nicolas Clément, Jean-Paul Rouger. Optical Gate Control of Power Transistors. IEICE-NPERC-J Joint Symposium on Smart Applications of Photonics to New Generation Power Electronics , Dec 2016, Tokyo, Japan. ⟨hal-01413341⟩

Book sections4 documents

  • Stéphane Lefebvre, Bernard Multon, Nicolas Clément, Jean-Paul Rouger. Caractéristiques des composants à semi-conducteurs de puissance en vue de leur commande. Techniques de l'Ingénieur, 2018. ⟨hal-01853753⟩
  • Stéphane Lefebvre, Bernard Multon, Nicolas Clément, Jean-Paul Rouger. Composants bipolaires (thyristors, triacs, GTO, GCT et BJT) : circuits de commande. Techniques de l'Ingénieur, 2018. ⟨hal-01853755⟩
  • Stéphane Lefebvre, Bernard Multon, Nicolas Clément, Jean-Paul Rouger. Commande des composants à semi-conducteurs de puissance : contexte. Techniques de l'Ingénieur , 2017. ⟨hal-01756766⟩
  • Jean-Christophe Crébier, Nicolas Clément, Jean-Paul Rouger. Industrial and power electronics. introducing to circuits andsystems, Unesco, 2012. ⟨hal-00821040⟩

Patents2 documents

  • Bastien Letowski, Julie Widiez, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Dispositif électronique de puissance a structure d’interconnexion électrique plane. France, N° de brevet: 16/54036. 2016. ⟨hal-01518798⟩
  • Bastien Letowski, Julie Widiez, Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier. Dispositif électronique de puissance à cellule de commutation 3D verticale. France, N° de brevet: 14/60636. 2014. ⟨hal-01518820⟩

Other publications1 document

  • Jean-Christophe Crébier, Dac-Binh Nguyen, Loïc Vincent, Nicolas Clément, Jean-Paul Rouger, Laurent Aubard, et al.. Promotion d'une approche système dans l'intégration monolithique pour semi-conducteurs de puissance. 2006. ⟨hal-00202667⟩

Theses1 document

  • Nicolas Clément, Jean-Paul Rouger. Intégration monolithique des fonctions d'interface au sein de composants de puissance à structure verticale. Energie électrique. Institut National Polytechnique de Grenoble - INPG, 2008. Français. ⟨tel-00344847⟩

Habilitation à diriger des recherches1 document

  • Nicolas C. Rouger. HABILITATION A DIRIGER DES RECHERCHES Spécialité : Electronique, Electrotechnique, Automatique et Traitement du signal (EEATS) : NOUVEAU PARADIGME POUR L’INTÉGRATION DES ACTIFS EN ÉLECTRONIQUE DE PUISSANCE. Energie électrique. Institut Polytechnique de Grenoble, 2015. ⟨tel-01187283⟩