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Nicolas Rouger
64
Documents
Affiliations actuelles
- 405657
Identifiants chercheurs
- nicolas-rouger
- 0000-0002-2161-9043
- IdRef : 190456760
Site web
- https://scholar.google.fr/citations?user=K1uNl9AAAAAJ
Présentation
My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters.
As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities.
I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.
Publications
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Double chips low side - high side configurable full gate driver circuits for a high speed inverter legCIPS 2018 10th International Conference on Integrated Power Electronics Systems, 2018, Mar 2018, Stuttgart, Germany
Communication dans un congrès
hal-01743621v1
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Solderless Leadframe Assisted Wafer-Level Packaging Technology for Power Electronics2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, France. pp.1251-1257, ⟨10.1109/ECTC.2018.00193⟩
Communication dans un congrès
cea-02185324v1
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Contributions aux circuits de commande gate driver dédiés à la haute température et aux très fortes vitesses de commutationSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès
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Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devicesPower Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
hal-01362327v1
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CMOS SOI gate driver with integrated optical supply and optical driving for fast power transistors Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
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Towards vertical power device 3D packaging on 8-inch wafer Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic
Communication dans un congrès
hal-01362296v1
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CMOS gate drivers with integrated optical interfaces for extremely fast power transistors ESARS-ITEC 2016, Nov 2016, Toulouse, France
Communication dans un congrès
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Contributions aux circuits de « gate-driver » dédiés aux transistors de puissance à forte vitesse de commutation dans un environnement haute temperatureSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
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Mise en place d'un packaging 3D collectif de composants de puissance à structure verticaleSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361603v1
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Enabling high switching speed for diamond power transistors3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France
Communication dans un congrès
hal-01176598v1
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CMOS Gate Driver with Integrated Optical receiver for Power Electronics applicationsECCE Europe 2015, Sep 2015, Genève, Switzerland
Communication dans un congrès
hal-01208262v1
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Integrated gate driver circuits with an ultra-compact design and high level of galvanic isolation for power transistorsInternational Conference on Integrated Power Electronics Systems (CIPS 2014), Feb 2014, Nuremberg, Germany. ISBN 978-3-8007-3578-5, pp 348-353
Communication dans un congrès
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Advanced Wafer Level Packaging Technology by Layer Transfer Engineering : Application to 3D Packaging for vertical power devicesFrom nano to macro power electronics and packaging international workshop, Oct 2014, Tours, France
Communication dans un congrès
hal-01092423v1
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CMOS Integrated Optical Isolator for Power Transistor Gate DriverIECON 2014, Oct 2014, Dallas, United States
Communication dans un congrès
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Transfert isolé des signaux de commande dans le contexte de l'intégration pour les composants actifs d'électronique de puissanceSymposium de Génie Électrique 2014, Jul 2014, Cachan, France
Communication dans un congrès
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3D Packaging for vertical power devicesCIPS 2014, Feb 2014, Nuremberg, Germany
Communication dans un congrès
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Méthodes spécifiques de caractérisation et de commande de composants grand gap en environnement variableSymposium de Génie Électrique 2014, Jul 2014, Cachan, France
Communication dans un congrès
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Diamond bipolar device simulationIEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States
Communication dans un congrès
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Performance Measurements of an Optical Detector Designed for Monolithic Integration with a Power VDMOSI2MTC 2013, May 2013, Minnéapolis, United States
Communication dans un congrès
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Models and parameters study for diamond electronic devices simulations74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan
Communication dans un congrès
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An Adaptive Output Impedance Gate Drive for Safer and More Efficient Control of Wide Bandgap DevicesIEEE WipDa 2013, 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695564⟩
Communication dans un congrès
hal-00988293v1
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A Specific Switching Characterization Method for Evaluation of Operating Point and Temperature Impacts on Wide Bandgap DevicesIEEE WipDa 2013, Oct 2013, Columbus, United States. ⟨10.1109/WiPDA.2013.6695573⟩
Communication dans un congrès
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True 3D Packaging Solution for Stacked Vertical Power DevicesThe 25th International Symposium on Power Semiconductor Devices and ICs. (ISPSD 2013), May 2013, Kanazawa, Japan. pp.97-100
Communication dans un congrès
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Integration of Dual Active Bridge DC/DC Converters for Converters Networks applicationsPCIM 2012, May 2012, Nuremberg, Germany
Communication dans un congrès
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Vers une filière et un support de conception EDA (Electronic Design Automation) des fonctions de coupure spécifiquesElectronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France. 4p
Communication dans un congrès
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A vertical power device conductive assembly at wafer level using direct bonding technologyIn Power Semiconductor Devices and ICs (ISPSD), Jun 2012, France. pp.77-80
Communication dans un congrès
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Integrated Low Power Low Voltage Isolated Switch Mode Power SupplyIn Industrial Electronics CONference, IEEE IECON 2012, Oct 2012, France. pp.500-505
Communication dans un congrès
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Etude expérimentale d'un étage intégré d'isolation par voie optique pour transistors de puissanceElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
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Packaging à l'échelle du wafer pour les convertisseurs multicellulairesElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
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Convertisseur intégré pour les applications réseaux de micro convertisseursElectronique de Puissance du Futur 2012, Jul 2012, France
Communication dans un congrès
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An Integration of Dual Active Bridge DC/DC Converters Used in Micro Converters NetworksPower Electronics/Intelligent Motion/Power Quality PCIM Europe Conference 2012, May 2012, Nuremberg, Germany
Communication dans un congrès
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Implementation of monolithic multiple vertical power diodes in a multiphase converterApplied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE, Feb 2012, Orlando, United States. pp.169-175
Communication dans un congrès
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CASCADED INVERTERS FOR ELECTRICAL VEHICLES: TOWARDS A BETTER MANAGEMENT OF TRACTION CHAIN FROM THE BATTERY TO THE MOTOR?ISIE 2011, Jun 2011, Gdansk, Poland
Communication dans un congrès
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Integrated Low Power and High Bandwidth Optical Isolator for Monolithic Power MOSFETs DriverProceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.356-359
Communication dans un congrès
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A novel Power System in Package with 3D chip on chip interconnections of the power transistor and its gate driverProceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.328-331
Communication dans un congrès
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Towards reduced threshold voltages for vertical power Mosfet transistorsISIE 2011, Jun 2011, Gdansk, Poland
Communication dans un congrès
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Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chipDesign and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip, May 2011, San Diego, United States. pp.360-363
Communication dans un congrès
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optimization of a power MOSFET And Its Monolithically integrated self-powering CircuitsXI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3
Communication dans un congrès
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Conception, intégration 3D et caractérisation d'un circuit de commande CMOS pour transistors de puissanceÉlectronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
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Flexible Parameter Identification Tool for semiconductor Device DesignXI-th International Workshop on Optimization and Inverse Problems in Electromagnetism, Sep 2010, Sofia, Bulgaria. pp.ISBN 978-954-438-855-3
Communication dans un congrès
hal-00520042v1
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Tension de seuil réduite pour composants de puissance à grille: Intérêts et conséquences.Électronique de Puissance du Futur, Jun 2010, Saint-Nazaire, France. 4p
Communication dans un congrès
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Design and characterization of an integrated CMOS gate driver for vertical power MOSFETsECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States
Communication dans un congrès
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3D hybrid integration and functional interconnection of a power transistor and its gate driverECCE (Energy Conversion Conference and Exposition) IEEE, Sep 2010, Atlanta, United States
Communication dans un congrès
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Toward Integrated Gate Driver Supplies : Practical and Analytical Analysis of High-Voltage CapabilitiesPower Electronics Specialists Conference PESC 08, Jun 2008, Rhodes, Greece. IEEE pesc conference, pp 873-879
Communication dans un congrès
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Integrated Photoreceiver For An Isolated Control Signal Transfert In Favour Of Power TransistorsIEEE 20th International Symposium on Power Semiconductor Devices and ICs (ISPSD'08), May 2008, Orlando, United States. pp. 213-216
Communication dans un congrès
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Intégration Monolithique d'un Récepteur Optique au sein de Transistors de Puissance : Enjeux et PossibilitésEPF 2008 XIIème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France. pp.141-146
Communication dans un congrès
hal-00296716v1
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Toward generic fully integrated gate driver power suppliesIEEE IECON 2006, Nov 2006, Paris, France
Communication dans un congrès
hal-00199403v1
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High Efficiency and Fully Integrated Self Powering Technique For VIPer Based Flyback ConvertersIAS-IEEE Conference, Oct 2006, Tampa, Floride, United States
Communication dans un congrès
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Simulation, Design and Testing of Integrated Power Supply For Insulated Gate TransistorsIEEE ISPSD'06, Jun 2006, Naples, Italy
Communication dans un congrès
hal-00193829v1
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Nouvelles fonctions de commutation de puissance intégrées sur SiliciumJournées GdR, Oct 2005, Lyon, France
Communication dans un congrès
hal-00188228v1
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Industrial and power electronicsintroducing to circuits andsystems, Unesco, 2012
Chapitre d'ouvrage
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Dispositif électronique de puissance a structure d’interconnexion électrique planeFrance, N° de brevet: 16/54036. 2016
Brevet
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Dispositif électronique de puissance à cellule de commutation 3D verticaleFrance, N° de brevet: 14/60636. 2014
Brevet
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Promotion d'une approche système dans l'intégration monolithique pour semi-conducteurs de puissance2006
Autre publication scientifique
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