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Nicolas Rouger

18
Documents
Affiliations actuelles
  • 405657
Identifiants chercheurs
Site web
  • https://scholar.google.fr/citations?user=K1uNl9AAAAAJ

Présentation

My field of interest is power electronics, and more particularly, power semiconductor devices. Recently, I have focused my research activity on the next generation of power semiductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond). For SiC and GaN, I focus on integration techniques and dedicated Silicon CMOS gate drivers to improve the performances and offer new trade-offs. For diamond, I work with pionners such as CNRS/Institut Néel and Diamfab start-up company in Grenoble, to design power semiconductor devices with outstanding performances, and implement those in the next generation of power converters. As a scientist at CNRS/Laplace in Toulouse, I supervise grad. students, PhD students and postdocs, with my colleagues in the power converter research group, other academic colleagues and industrial partners. Since Jan. 2020, I have the privilege to be the head of this research group, composed of 35 persons, and work closely with other group leaders and laboratory board of directors, to continuously improve our activities. I lead and actively contribute to research projects on power electronics, funded by local, national or international funding agencies, from basic science to applications towards energy transition. Notably, I am involved in the SEMA joint lab between NXP Semiconductors and CNRS (Laplace, Laas, Institut Polytechnique Toulouse, Univ. Toulouse 3 Paul Sabatier) since its creation in 2020, to innovate on electrical mobility.

Publications

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Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors

T. Pham , J. Piñero , A. Maréchal , M. Gutierrez , F. Lloret
IEEE Transactions on Electron Devices, 2018, 65 (5), pp.1830-1837. ⟨10.1109/TED.2018.2813084⟩
Article dans une revue hal-01757885v1
Image document

Comprehensive electrical analysis of metal/Al 2 O 3 /O-terminated diamond capacitance

T. Pham , A. Maréchal , P. Muret , D. Eon , E. Gheeraert
Journal of Applied Physics, 2018, 123 (16), pp.161523. ⟨10.1063/1.4996114⟩
Article dans une revue hal-01701727v1

High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication

Thanh-Toan Pham , C. Gutierrez , C. Masante , Nicolas C. Rouger , D. Eon
Applied Physics Letters, 2018, 112 (10), pp.102103. ⟨10.1063/1.5018403⟩
Article dans une revue hal-01757878v1

Deep depletion concept for diamond MOSFET

T. Pham , Nicolas C. Rouger , C. Masante , G. Chicot , F. Udrea
Applied Physics Letters, 2017, 111 (17), pp.173503. ⟨10.1063/1.4997975⟩
Article dans une revue hal-01701733v1

Deep-depletion mode boron doped monocrystalline diamond metal oxide semiconductor field effect transistor

Thanh-Toan Pham , Julien Pernot , Gaëtan Perez , David Eon , Etienne Gheeraert
IEEE Electron Device Letters, 2017, 38 (11), pp.1571-1574. ⟨10.1109/LED.2017.2755718⟩
Article dans une revue hal-01617256v1

Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

Khaled Driche , H. Umezawa , Nicolas Clément, Jean-Paul Rouger , Gauthier Chicot , Etienne Gheeraert
Japanese Journal of Applied Physics, 2017, 56 (4S), pp.04CR12. ⟨10.7567/JJAP.56.04CR12⟩
Article dans une revue hal-01502587v1

Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations

Aurélien Maréchal , Nicolas Clément, Jean-Paul Rouger , Jean-Christophe Crébier , Julien Pernot , Satoshi Koizumi
Diamond and Related Materials, 2014, 43, pp.34. ⟨10.1016/j.diamond.2014.01.009⟩
Article dans une revue hal-00968208v1

Towards the implementation of diamond power devices in power converters and measurements of their switching losses

Nicolas C. Rouger , Damien Risaletto , Pierre Lefranc , Pierre-Olivier Jeannin , Hugo Cagnol
MRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès hal-03289135v1
Image document

Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissance

Cédric Masante , Khaled Driche , Thanh-Toan Pham , Hitoshi Umezawa , Gaetan Perez
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02981917v1

200V, 4MV/cm lateral diamond MOSFET

Thanh-Toan Pham , Julien Pernot , C. Masante , D. Eon , E. Gheeraert
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩
Communication dans un congrès hal-01701734v1

Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor

Nicolas Clément, Jean-Paul Rouger , D. Eon , Gaëtan Perez , Pierre-Olivier Jeannin , Pierre Lefranc
2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès hal-01306775v1
Image document

Simulation numérique et caractérisation de composants de puissance en diamant

Nicolas Clément, Jean-Paul Rouger , Aurélien Maréchal , Gauthier Chicot , Gaetan Perez , Thanh-Toan Pham
Symposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès hal-01361596v1
Image document

La diode Schottky en diamant : le présent et le futur

David Eon , Julien Pernot , Aboulaye Traoré , Nicolas Clément, Jean-Paul Rouger , Etienne Gheeraert
Symposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès hal-01361578v1

Enabling high switching speed for diamond power transistors

Nicolas Clément, Jean-Paul Rouger , Aurélien Maréchal , Thanh Long Le , Davy Colin , Julien Pernot
3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France
Communication dans un congrès hal-01176598v1

Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamond

Aurélien Maréchal , Gauthier Chicot , Nicolas Clément, Jean-Paul Rouger , Julien Pernot , Etienne Gheeraert
SBDD 2014, Feb 2014, Hasselt, Belgium
Communication dans un congrès hal-00989688v1

Diamond bipolar device simulation

Aurélien Maréchal , Nicolas Clément, Jean-Paul Rouger , Jean-Christophe Crébier , Julien Pernot , S. Koizumi
IEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States
Communication dans un congrès hal-00911320v1

Models and parameters study for diamond electronic devices simulations

Aurélien Maréchal , Nicolas Clément, Jean-Paul Rouger , Jean-Christophe Crébier , Julien Pernot , S. Koizumi
74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan
Communication dans un congrès hal-00989536v1