- 5
- 2
- 1
Mohamed Boutchich
Dr Boutchich Mohamed
Associate Professor in Electrical Engineering
Sorbonne University
8
Documents
Affiliations actuelles
- 411302
Domaines de recherche
Publications
- 8
- 6
- 5
- 4
- 4
- 3
- 2
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 3
- 4
|
|
Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals HeterostructureScientific Reports, 2015, 5 (1), pp.16465. ⟨10.1038/srep16465⟩
Article dans une revue
hal-01257768v2
|
|
|
Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acidNanotechnology, 2015, 26 (44), pp.445702. ⟨10.1088/0957-4484/26/44/445702⟩
Article dans une revue
hal-01244484v1
|
Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrateApplied Physics Letters, 2014, 105 (23), pp.233111 - 233111-5. ⟨10.1063/1.4903866⟩
Article dans une revue
hal-01099354v1
|
Characterization of graphene and applications to heterojunctionsInternational Conference on Novel Material : Engineering and Properties - Soleil 2015, Synchrotron Soleil, Sep 2015, Saclay, France
Communication dans un congrès
hal-01257911v1
|
|
Doping and characterization of trilayer graphene on 4H-SiC (0001)International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan
Communication dans un congrès
hal-01104494v1
|
|
Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7PM-4
Communication dans un congrès
hal-01104492v1
|
Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001)IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P8
Poster de conférence
hal-01104496v1
|
Method for obtaining a graphene-based field effect transistor, in particular a memory field effect transistor, equipped with an embedded dielectric elementFrance, Patent n° : EP 16 305 161.8. 2016
Brevet
hal-01814906v1
|