Co-auteurs

Nombre de documents

54

Boutchich Mohamed


Article dans une revue19 documents

  • Chaoyu Chen, José Avila, Hakim Arezki, Fei Yao, Van Luan Nguyen, et al.. Structural and electronic inhomogeneity of graphene revealed by Nano-ARPES. Journal of Physics: Conference Series, IOP Publishing, 2017, 864, 〈10.1088/1742-6596/864/1/012029〉. 〈hal-01631649〉
  • Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescence. physica status solidi (RRL) - Rapid Research Letters, Wiley-VCH Verlag, 2017, 11 (6), 〈10.1002/pssr.201700066〉. 〈hal-01631792〉
  • Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements. Energy Procedia, Elsevier, 2017, 124, pp.10 - 17. 〈10.1016/j.egypro.2017.09.331〉. 〈hal-01631793〉
  • Jer-Chyi Wang, Kai-Ping Chang, Chih-Ting Li, Ching-Yuan Su, Fethullah Güneş, et al.. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications. Carbon, Elsevier, 2017, 113, pp.318 - 324. 〈10.1016/j.carbon.2016.11.063〉. 〈hal-01428626〉
  • Keiki Fukumoto, Mohamed Boutchich, Hakim Arezki, Ken Sakurai, Daniela Di Felice, et al.. Ultrafast electron dynamics in twisted graphene by femtosecond photoemission electron microscopy. Carbon, Elsevier, 2017, 124, pp.49 - 56. 〈10.1016/j.carbon.2017.08.032〉. 〈hal-01631643〉
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Ali Madouri, José Alvarez, et al.. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures. Journal of Physics: Condensed Matter, IOP Publishing, 2016, 28 (40), pp.404001. 〈10.1088/0953-8984/28/40/404001〉. 〈hal-01363551〉
  • Songphol Kanjanachuchai, Ming Xu, Alexandre Jaffré, Apichart Jittrong, Thitipong Chokamnuai, et al.. Excitation transfer in stacked quantum dot chains. Semiconductor Science and Technology, IOP Publishing, 2015, 30 (5), pp.055005. 〈10.1088/0268-1242/30/5/055005〉. 〈hal-01257798〉
  • R. Othmen, H. Arezki, H. Ajlani, A. Cavanna, M. Boutchich, et al.. Direct transfer and Raman characterization of twisted graphene bilayer. Applied Physics Letters, American Institute of Physics, 2015, 106 (10), pp.103107 〈10.1063/1.4914309〉. 〈hal-01257805〉
  • Kuan-I Ho, Mohamed Boutchich, Ching-Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, et al.. A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering. Advanced Materials, 2015, 27 (41), pp.6519-6525 〈10.1002/adma.201502544〉. 〈hal-01257741〉
  • Hakim Arezki, Kuan-I Ho, Alexandre Jaffré, David Alamarguy, J Alvarez, et al.. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001). AIP Conference Proceedings, American Institute of Physics, 2015, 1649, pp.8. 〈10.1063/1.4913537〉. 〈hal-01239163〉
  • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots . AIP Conference Proceedings, American Institute of Physics, 2015, 1649, pp.3. 〈10.1063/1.4913536〉. 〈hal-01239179〉
  • Haikel Sediri, Debora Pierucci, Mahdi Hajlaoui, Hugo Henck, Gilles Patriarche, et al.. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure. Scientific Reports, Nature Publishing Group, 2015, 5, pp.16465. 〈10.1038/srep16465〉. 〈hal-01257768v2〉
  • Fethullah Günes, Hakim Arezki, Debora Pierucci, David Alamarguy, José Alvarez, et al.. Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid. Nanotechnology, Institute of Physics, 2015, 26 (44), pp.445702. 〈10.1088/0957-4484/26/44/445702〉. 〈hal-01244484〉
  • M. Boutchich, H. Arezki, D. Alamarguy, K.-I. Ho, H. Sediri, et al.. Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate. Applied Physics Letters, American Institute of Physics, 2014, 105 (23), pp.233111 - 233111-5. 〈10.1063/1.4903866〉. 〈hal-01099354〉
  • José Alvarez, M. Boutchich, Jean-Paul Kleider, T. Teraji, Y. Koide. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (35), pp.355102. 〈10.1088/0022-3727/47/35/355102〉. 〈hal-01099593〉
  • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, A. Barras, et al.. Characterization of graphene oxide reduced through chemical and biological processes. Journal of Physics: Conference Series, IOP Publishing, 2013, 433 (1), pp.012001. 〈10.1088/1742-6596/433/1/012001〉. 〈hal-00931274〉
  • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, Meiyong Liao, et al.. Amorphous silicon diamond based heterojunctions with high rectification ratio. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2110-2113. 〈10.1016/j.jnoncrysol.2011.12.067〉. 〈hal-00778949〉
  • M. Boutchich, K. Ziouche, M. Ait-Hammouda Yala, P. Godts, Delphine Leclercq. Package-free infrared micro sensor using polysilicon thermopile. Sensors and Actuators A: Physical , Elsevier, 2005, 121, pp.52-58. 〈hal-00125621〉
  • M. Boutchich, K. Ziouche, P. Godts, Delphine Leclercq. Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2002, 23, pp.139-141. 〈hal-00148729〉

Communication dans un congrès28 documents

  • Hakim Arezki, Mohamed Boutchich, Alexandre Jaffré, J Alvarez, Julien Chaste, et al.. Probing the electronic properties of CVD graphene superlattices. Nanotechnology Materials and Devices Conference (NMDC), 2016 IEEE, Sep 2016, Toulouse, France. 〈10.1109/NMDC.2016.7777071〉. 〈hal-01533988〉
  • Keiki Fukumoto, Hakim Arezki, Ken Onda, Shin-Ya Koshihara, Mohamed Boutchich. Spatio-temporal observation of photogenerated electron dynamics in twisted graphene. The 4th Advanced Electromagnetics Symposium, Jul 2016, Malaga, Spain. 〈hal-01363553〉
  • David Alamarguy, Hakim Arezki, Fethullah Gunes, Alexandre Jaffré, José Alvarez, et al.. Etude du Dopage de Graphène Epitaxial sur SiC(0001) par Spectroscopies de Photoélectrons . ELSPEC'16, 7eme conférence francophone sur les spectroscopies d’électrons , May 2016, Meudon, France. 〈hal-01449031〉
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, et al.. Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. 〈hal-01232115〉
  • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider, J Alvarez, David Alamarguy, et al.. Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001). ANM2015,6th International Conference on Advanced Nanomaterials, Jul 2015, Aveiro, Portugal. 〈hal-01257881〉
  • Mohamed Boutchich, Jean-Paul Kleider, Abdelkarim Ouerghi, Hong-Lee Younghee, Young Hee Lee, et al.. Characterization of graphene and applications to heterojunctions. International Conference on Novel Material : Engineering and Properties - Soleil 2015, Sep 2015, Saclay, France. 〈hal-01257911〉
  • Ming Xu, Mohamed Boutchich, Igor Paul Sobkowicz, J Alvarez, Rudolf Brüggemann, et al.. Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. 〈hal-01239190〉
  • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider. Raman spectroscopy on Bi and Trilayer flakes of graphene. Nano-TN 2015, Feb 2015, Hammamet, Tunisia. 〈hal-01232095〉
  • Mohamed Boutchich, Mohamed Boutchich. Probing and Modulation of the electronic properties of graphene for heterostructures. Nanodevices Workshop - CGU Taiwan, Dec 2015, Taoyuan, Taiwan. 2015. 〈hal-01257875〉
  • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Spatially resolved photoluminescence on multi stack InAs quantum dots. International Workshop on Nanostructures Characterization and Nanomaterials – Bangkok 2015, Aug 2015, Bangkok, Thailand. 〈hal-01257898〉
  • Mohamed Boutchich. Graphene and beyond for heterojunctions - Research opportunities. XNEM Workshop, Oct 2015, le Caire, Egypt. 〈hal-01257922〉
  • Alexandre Jaffré, Hakim Arezki, Mohamed Boutchich, J Alvarez, Jean-Paul Kleider. Coupling on a confocal imaging system µ-Raman, µ-PL, AFM and electrical extensions at a sub micrometric scale. International Workshop on Nanostructure Characterization and Nanomaterials, Aug 2015, Bangkok, Thailand. 2015. 〈hal-01259190〉
  • M. Xu, Mohamed Boutchich, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, et al.. TEMPERATURE DEPENDENT PHOTOLUMINESCENCE IN SILICON BASED HETEROJUNCTION SOLAR CELL. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, pp.1214-1217, 2014. 〈hal-01099586〉
  • Zakaria Djebbour, Walid Elhuni, Anne Migan-Dubois, Mohamed Boutchich, Jean-Paul Kleider, et al.. Research & Partnership opportunities in III-V on Si at LGEP and Supélec. France-USA Workshop on Quantum Engineered High Efficiency Photvoltaics, Jun 2014, Houston, United States. Proceedings of the France-USA Workshop on Quantum Engineered High Efficiency Photvoltaics. 〈hal-01099358〉
  • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Haikel Sediri, et al.. Doping and characterization of trilayer graphene on 4H-SiC (0001). International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan. 〈hal-01104494〉
  • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Sediri Haikel, et al.. Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. Proceedings of the Irago Conference 2014, pp.7PM-4, 2014. 〈hal-01104492〉
  • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. Journées Junior FédESol 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931326〉
  • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. JNPV 2013, Dec 2013, Dourdan, France. 2013. 〈hal-00931327〉
  • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, A. Barras, et al.. Graphene oxide reduced through chemical and biological processes. Irago Conference 2012, Nov 2012, Aichi, Japan. 2012. 〈hal-00779022〉
  • José Alvarez, Mohamed Boutchich, Djicknoum Diouf, Jean-Paul Kleider, M. Liao, et al.. Ultraviolet photodetectors based on hydrogenated/oxidized diamond surfaces characterization of silicon heterojunctions for solar cells. IUMRS-ICEM 2012, Mar 2012, Yokohama, Japan. 2012. 〈hal-00779008〉
  • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, M Liao, et al.. Amorphous and microcrystalline silicon diamond based heterojunctions. ICANS24, Aug 2011, Nara, Japan. 2011. 〈hal-00710772〉
  • K. Ziouche, M. Boutchich, M. Achani, P. Godts, Delphine Leclercq. A new infrared microsensor. Sensor 2003, 2003, Nuremberg, Germany. 2003. 〈hal-00146386〉
  • K. Ziouche, M. Boutchich, D. Bernard-Loridant, P. Godts, Delphine Leclercq. A new ultra-violet microradiometer. 2001, International Frequency Sensor Association, pp.221-226, 2001. 〈hal-00152186〉
  • Delphine Leclercq, K. Ziouche, M. Boutchich, P. Godts. New developments on IR distribution-patterned microradiometers family. 2001, SPIE – The International Society for Optical Engineering, Bellingham, WA, USA, pp.389-396, 2001. 〈hal-00152188〉
  • K. Ziouche, M. Boutchich, P. Godts, Delphine Leclercq. Méthode de mesure de l'absorptivité différentielle de 2 matériaux. Application en UV et IR. Conférence Métrologie 2001, 2001, Saint Louis, France. 2001. 〈hal-00152207〉
  • K. Ziouche, M. Boutchich, P. Godts, Delphine Leclercq. Réalisation de nouveaux microradiomètres sur silicium. Etude des propriétés thermoélectriques du polysilicium dopé N et P. 8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France. 2001. 〈hal-00152208〉
  • P. Godts, K. Ziouche, M. Boutchich, Delphine Leclercq. Thermoelectric infrared microsensor using suspended membranes made by silicon micromachining. 2001, SPIE – The International Society for Optical Engineering, Bellingham, WA, USA, pp.380-388, 2001. 〈hal-00152189〉
  • K. Ziouche, M. Boutchich, D. Bernard-Loridant, P. Godts, Delphine Leclercq. Nouveau microcapteur de rayonnement ultraviolet à absorption différentielle. Journées Micro et Nano Technologies, 2000, Paris, France. 2000. 〈hal-00158491〉

Poster6 documents

  • R Brüggemann, Ming Xu, J Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements. Silicon PV 2017, Apr 2017, Freiburg, Germany. 〈hal-01632914〉
  • Fethullah Gunes, David Alamarguy, Hakim Arezki, Alexandre Jaffré, José Alvarez, et al.. Nitric Acid doping of epitaxial graphene on SiC (0001) substrate. Graphene 2014, May 2014, Toulouse, France. Proceedings of the 4th edition of Graphene Conference. 〈hal-01104503〉
  • M. Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, et al.. Photoluminescence techniques for heterojunction solar cell characterization. JNPV 2014, Dec 2014, Dourdan, France. Actes des Journées Nationales du PhotoVoltaïque. 〈hal-01099349〉
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, et al.. Engineering of CVD graphene optoelectronic properties Application as transparent electrode in solar cells. CMD25-JMC14, Aug 2014, Paris, France. 〈hal-01104502〉
  • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, José Alvarez, et al.. Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001). IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P8. 〈hal-01104496〉
  • Ming Xu, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Apichat Jittrong, et al.. Spatially resolved photoluminescence on multi stack InAs quantum dots. IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7P2. 〈hal-01104500〉

Autre publication1 document

  • M. Boutchich. Microcapteurs de rayonnement infrarouge en technologie silicium. Thèse #4315. Thèse de doctorat en Electronique, Université de Lille1, 13 décembre. 2002. 〈hal-00148731〉