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Mohamed Boutchich

Dr Boutchich Mohamed Associate Professor in Electrical Engineering Sorbonne University
16
Documents
Affiliations actuelles
  • 411302

Domaines de recherche


Publications

david-alamarguy

Imaging the defect distribution in 2D hexagonal boron nitride by tracing photogenerated electron dynamics

Keiki Fukumoto , Yuta Suzuki , Songyan Hou , Muhammad Danang Birowosuto , Alexandre Jaffre
Journal of Physics D: Applied Physics, 2020, 53 (40), pp.405106. ⟨10.1088/1361-6463/ab9860⟩
Article dans une revue hal-04462845v1
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Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device

Kai Ping Chang , Haneen Abushammala , Mamina Sahoo , Alexandre Jaffre , David Alamarguy
Journal of Applied Physics, 2020, 127 (24), pp.245106. ⟨10.1063/1.5126793⟩
Article dans une revue hal-04463031v1
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Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

Hakim Arezki , Mohamed Boutchich , David Alamarguy , Ali Madouri , José Alvarez
Journal of Physics: Condensed Matter, 2016, 28 (40), pp.404001. ⟨10.1088/0953-8984/28/40/404001⟩
Article dans une revue hal-01363551v1
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Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

Hakim Arezki , Kuan-I Ho , Alexandre Jaffré , David Alamarguy , J Alvarez
AIP Conference Proceedings, 2015, 1649, pp.8. ⟨10.1063/1.4913537⟩
Article dans une revue hal-01239163v1
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Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid

Fethullah Günes , Hakim Arezki , Debora Pierucci , David Alamarguy , José Alvarez
Nanotechnology, 2015, 26 (44), pp.445702. ⟨10.1088/0957-4484/26/44/445702⟩
Article dans une revue hal-01244484v1

Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

M. Boutchich , H. Arezki , D. Alamarguy , K.-I. Ho , H. Sediri
Applied Physics Letters, 2014, 105 (23), pp.233111 - 233111-5. ⟨10.1063/1.4903866⟩
Article dans une revue hal-01099354v1

Characterization of graphene oxide reduced through chemical and biological processes

Mohamed Boutchich , Alexandre Jaffré , David Alamarguy , José Alvarez , Alexandre Barras
Journal of Physics: Conference Series, 2013, 433 (1), pp.012001. ⟨10.1088/1742-6596/433/1/012001⟩
Article dans une revue hal-00931274v1

Etude du Dopage de Graphène Epitaxial sur SiC(0001) par Spectroscopies de Photoélectrons

David Alamarguy , Hakim Arezki , Fethullah Gunes , Alexandre Jaffré , José Alvarez
ELSPEC'16, 7eme conférence francophone sur les spectroscopies d’électrons, May 2016, Meudon, France
Communication dans un congrès hal-01449031v1

Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon

Hakim Arezki , Mohamed Boutchich , David Alamarguy , Fethullah Gunes , Ali Madouri
26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès hal-01232115v1

Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001)

Hakim Arezki , Mohamed Boutchich , Jean-Paul Kleider , J Alvarez , David Alamarguy
ANM2015,6th International Conference on Advanced Nanomaterials, Jul 2015, Aveiro, Portugal
Communication dans un congrès hal-01257881v1

Doping and characterization of trilayer graphene on 4H-SiC (0001)

Mohamed Boutchich , Hakim Arezki , David Alamarguy , K.I. Ho , Haikel Sediri
International Workshop on Nanodevices and Materials, Nov 2014, Tokyo, Japan
Communication dans un congrès hal-01104494v1

Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)

Mohamed Boutchich , Hakim Arezki , David Alamarguy , K.I. Ho , Sediri Haikel
IRAGO 2014, Nov 2014, Tsukuba, Japan. pp.7PM-4
Communication dans un congrès hal-01104492v1

Graphene oxide reduced through chemical and biological processes

Mohamed Boutchich , Alexandre Jaffré , David Alamarguy , José Alvarez , Alexandre Barras
Irago Conference 2012, Nov 2012, Aichi, Japan
Communication dans un congrès hal-00779022v1