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Mihai Lazar

9
Documents

Présentation

Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms. Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.

Publications

olivier-palais

4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer

 Fatima Issa , Laurent Ottaviani , Dora Szalkai , Lvermeer Vermeeren , Vanessa Vervisch
IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1976 - 1980. ⟨10.1109/TNS.2016.2565439⟩
Article dans une revue hal-01389631v1

Improvements in Realizing 4H-SiC Thermal Neutron Detectors

 F. Issa , V. Vervisch , L. Ottaviani , D. Szalkai , L. Vermeeren
EPJ Web of Conferences, 2016, 106, ⟨10.1051/epjconf/201610605004⟩
Article dans une revue hal-01391841v1

4H-SiC P+N UV Photodiodes for Space Applications

 B. Berenguier , Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Frédéric Milesi
Materials Science Forum, 2015, 821-823, pp.644 - 647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩
Article dans une revue hal-01391847v1

Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation

 Fatima Issa , Laurent Ottaviani , Vanessa Vervisch , Dora Szalkai , Ludo Vermeeren
Materials Science Forum, 2015, 821-823, pp.875 - 878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩
Article dans une revue hal-01391850v1

4H-silicon carbide thin junction based ultraviolet photodetectors

 Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Vincent Le Borgne
Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩
Article dans une revue hal-00747356v1
Image document

4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

 Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine
Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩
Article dans une revue hal-02275699v1
Image document

Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

 Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Wilfried Vervisch , Julian Duchaine
WOCSDICE, May 2011, Catania, Italy. pp.181
Communication dans un congrès hal-00661522v1

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

 Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747301v1

Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour

 Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩
Communication dans un congrès hal-00661511v1