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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration
Ralph Makhoul
,
Abdelhakim Bourennane
,
Luong Viêt Phung
,
Frédéric Richardeau
,
Mihai Lazar
IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
hal-04147862v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology
Ralph Makhoul
,
Nour Beydoun
,
Abdelhakim Bourennane
,
Luong Viet Phung
,
M. Lazar
Communication dans un congrès
hal-04203163v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Ralph Makhoul
,
Nour Beydoun
,
Abdelhakim Bourennane
,
Luong Viêt Phung
,
Frédéric Richardeau
20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
Communication dans un congrès
hal-04221605v1
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Recrystallization of thin 4H-SiC films deposited by PVD techniques, a way for new emerging fields
Enora Marion Vuillermet
,
Elise Usureau
,
François Jomard
,
Léa Le Joncour
,
Aurore Andrieux
C'Nano 2023: The Nanoscience meeting, Centre national de compétences en Nanosciences, Mar 2023, Poitiers, France
Communication dans un congrès
hal-04171807v1
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Caractérisation du dopage de dispositifs de puissance en 4H-SiC par KPFM et spectroscopie µ-Raman
Anaël Sédilot
,
Enora Marion Vuillermet
,
Régis Deturche
,
Elise Usureau
,
Jérémie Béal
24ème Forum des microscopies à sonde locale, Apr 2023, Obernai, France
Communication dans un congrès
hal-04171760v1
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Integrated technology developed in SiC and other wide-bandgap semiconductors for harsh environment power electronics, sensors and quantum nanophononics.
Mihai Lazar
Technological Horizons in Micro and Nanoelectronics. Contributions of Diaspora to the Integration of Romania in International Projects - IPCEI, PNRR, CHIPS ACT - April 11-13, 2023, Romanian Academy, Apr 2023, Timisoara, Romania
Communication dans un congrès
hal-04304662v1
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Surface nano-structuration of 4H-SiC by controlled high-temperature annealing
Enora Marion Vuillermet
,
Elise Usureau
,
Régis Deturche
,
Mihai Lazar
The 6th International Workshop on Ultraviolet Materials and Devices (IWUMD 2023), Jun 2023, Metz, France
Communication dans un congrès
hal-04171629v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Pierre Brosselard
,
Dominique Planson
,
D. Tournier
,
Pascal Bevilacqua
,
Camille Sonneville
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04222211v1
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SiC structural characterization by non destructive near-field microscopy techniques
Kuan-Ting Wu
,
Enora Vuillermet
,
Elise Usureau
,
Youssef El-Helou
,
Michel Kazan
Communication dans un congrès
hal-03856554v1
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Surface engineering for SiC etching with Ni electroplating masks
Nour Beydoun
,
Mihai Lazar
,
Xavier Gassmann
Communication dans un congrès
hal-04303085v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT
Ali Ammar
,
Mihai Lazar
,
Bertrand Vergne
,
Sigo Scharnholz
,
Luong Viêt Phung
Communication dans un congrès
hal-03856578v1
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High quality single crystal recrystallization of thin 4H-SiC films deposed by PVD techniques, a way for new emerging fields
Elise Usureau
,
Enora Vuillermet
,
Mihai Lazar
,
Aurore Andrieux
,
Alexandre Jacquemot
19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland
Communication dans un congrès
hal-03856621v1
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Enhancement of light extraction in 4H silicon carbide by nanostructuring the surface with high temperature annealing
Enora Vuillermet
,
Elise Usureau
,
Mihai Lazar
,
Régis Deturche
19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland
Communication dans un congrès
hal-03856668v1
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis
Alina Muravitskaya
,
Anna Rumyantseva
,
Atse Julien Eric N’dohi
,
Camille Sonneville
,
Dominique Planson
ECSCRM2020-2021, Oct 2021, Tours, France
Communication dans un congrès
hal-03410757v1
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Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology
Mathilde Brocheton
,
Mihai Lazar
13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020-2021 ), Oct 2021, Tours, France
Communication dans un congrès
hal-03702808v1
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|
KPFM - Raman spectroscopy coupled technique for the characterization of wide bandgap semiconductor devices
Nicolas Bercu
,
Mihai Lazar
,
Olivier Simonetti
,
Pierre-Michel Adam
,
Mélanie Brouillard
13th European Conference on Silicon Carbide and Related Materials( ECSCRM2020-2021 ), Oct 2021, Tours, France
Communication dans un congrès
hal-03702799v1
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SiC tools for reliability study
Tanguy Phulpin
,
Alexandre Jaffré
,
José Alvarez
,
Mihai Lazar
Communication dans un congrès
hal-02378321v1
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SiC lateral Schottky diode technology for integrated smart power converter
Jean-François Mogniotte
,
Christophe Raynaud
,
Mihai Lazar
,
Bruno Allard
,
Dominique Planson
Communication dans un congrès
hal-01864545v1
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First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments
Jean-François Mogniotte
,
Mihai Lazar
,
Christophe Raynaud
,
Bruno Allard
Communication dans un congrès
hal-01646319v1
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy
Selsabil Sejil
,
Loïc Lalouat
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
ECSCRM'16, Sep 2016, Halkidiki, Greece
Communication dans un congrès
hal-02138729v1
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|
Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections
Julien Pezard
,
V. Souliere
,
Mihai Lazar
,
Naoufel Haddour
,
François Buret
ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Communication dans un congrès
hal-02138738v1
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase
Tony Abi-Tannous
,
Maher Soueidan
,
G. Ferro
,
Mihai Lazar
,
Christophe Raynaud
ICSCRM, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02138520v1
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions
Selsabil Sejil
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
,
Dominique Planson
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Communication dans un congrès
hal-02428659v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices
Mihai Lazar
,
Davy Carole
,
Christophe Raynaud
,
Gabriel Ferro
,
Selsabil Sejil
Communication dans un congrès
hal-01388019v1
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|
Graphene Field Effect Transistors on SiC for High Speed and Bio-sensing Applications
Julien Pézard
,
Mihai Lazar
,
Bertrand Vilquin
,
Pedro Rojo Romeo
,
Naoufel Haddour
JNTE (Journées Nationales des Technologies Emergentes), Nov 2015, Ecully, France
Communication dans un congrès
hal-01946338v1
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Vertical termination filled with adequate dielectric for SiC devices in HVDC applications
T. Nguyen-Bui
,
Mihai Lazar
,
Jean-Louis Augé
,
Hervé Morel
,
L. Phung
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02138529v1
|
|
Realization of a single layer graphene field effect transistor
J. Pezard
,
Jérémy Lhuillier
,
Z. El-Friakh
,
V. Souliere
,
Pedro Rojo Romeo
EMRS Spring Meeting, 2015, Lille, France
Communication dans un congrès
hal-01489358v1
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|
Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects
Dominique Planson
,
Pierre Brosselard
,
Karine Isoird
,
Mihai Lazar
,
Luong Viêt Phung
Communication dans un congrès
hal-01388002v1
|
|
Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX
Tony Abi Tannous
,
Maher Soueidan
,
Gabriel Ferro
,
Berangere Toury-Pierre
,
Mihai Lazar
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065327v1
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4H-SiC VJFETs with Self-Aligned Contacts
Konstantinos Zekentes
,
Antonis Stavrinidis
,
George Konstantinidis
,
Maria Kayambaki
,
Konstantinos Vamvoukakis
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Communication dans un congrès
hal-02133681v1
|
|
4H-SiC P-N junctions realized by VLS for JFET lateral structures
Selsabil Sejil
,
Farah Laariedh
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès
hal-02133686v1
|
|
Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC
Hassan Hamad
,
Pascal Bevilacqua
,
Dominique Planson
,
Christophe Raynaud
,
Dominique Tournier
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065307v1
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|
Graphene on 4H-SiC for terahertz transistors and ferroelectric non-volatile memories
J. Pezard
,
Jérémy Lhuillier
,
Z. El-Friakh
,
V. Souliere
,
Pédro Rojo Romeo
CSCRM, 2014, Grenoble, France
Communication dans un congrès
hal-01489926v1
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On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing
Tony Abi Tannous
,
Maher Soueidan
,
Gabriel Ferro
,
Mihai Lazar
,
Bérangère Toury
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
Communication dans un congrès
hal-02428741v1
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|
3C-SiC Seeded Growth on Diamond Substrate by VLS Transport
Arthur Vo-Ha
,
Mickael Rebaud
,
Davy Carole
,
Mihai Lazar
,
Alexandre Tallaire
Communication dans un congrès
hal-02875458v1
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|
Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
Nicolas Thierry-Jebali
,
Arthur Vo-Ha
,
Davy Carole
,
Mihai Lazar
,
Gabriel Ferro
Communication dans un congrès
hal-01391861v1
|
|
Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport
N Thierry-Jebali
,
Mihai Lazar
,
A Vo-Ha
,
D Carole
,
V Soulière
International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan
Communication dans un congrès
hal-04011693v1
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport
Davy Carole
,
Arthur Vo-Ha
,
Anthony Thomas
,
Mihai Lazar
,
Nicolas Thierry Thierry-Jebali
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
hal-04362529v1
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p-type SiC growth on diamond substrate by VLS Transport
Arthur Vo-Ha
,
Davy Carole
,
Mihai Lazar
,
D. Tournier
,
François Cauwet
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
hal-04423301v1
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|
Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates
Elias Haddad
,
Christian Martin
,
Charles Joubert
,
Bruno Allard
,
Maher Soueidan
CIMA, Mar 2011, Beyrouth, Lebanon. pp.Tu-P9
Communication dans un congrès
hal-00787193v1
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|
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications
Dominique Tournier
,
Pierre Brosselard
,
Christophe Raynaud
,
Mihai Lazar
,
Hervé Morel
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès
hal-00661500v1
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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC
Farah Laariedh
,
Mihai Lazar
,
Pierre Cremilleu
,
Jean-Louis Leclercq
,
Dominique Planson
Communication dans un congrès
hal-00661507v1
|
|
High-temperature behavior of SiC power diodes
Cyril Buttay
,
Christophe Raynaud
,
Hervé Morel
,
Mihai Lazar
,
Gabriel Civrac
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629225v1
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Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate
Jean Lorenzzi
,
Romain Esteve
,
Mihai Lazar
,
Dominique Tournier
,
Davy Carole
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747299v1
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements
Mihai Lazar
,
François Jomard
,
Duy Minh Nguyen
,
Christophe Raynaud
,
Gontran Pâques
ICSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747300v1
|
|
Buried selective growth of p-doped SiC by VLS epitaxy
Davy Carole
,
Stéphane Berckmans
,
Arthur Vo-Ha
,
Mihai Lazar
,
Dominique Tournier
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747294v1
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4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes
Stéphane Biondo
,
Laurent Ottaviani
,
Mihai Lazar
,
Dominique Planson
,
Julian Duchaine
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747301v1
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|
Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization
Cyril Buttay
,
Amandine Masson
,
Jianfeng Li
,
Mark C. Johnson
,
Mihai Lazar
HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Communication dans un congrès
hal-00672619v1
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600 V PiN diodes fabricated using on-axis 4H silicon carbide
Gabriel Civrac
,
Farah Laariedh
,
Nicolas Thierry-Jebali
,
Mihai Lazar
,
Dominique Planson
Communication dans un congrès
hal-00747295v1
|
|
Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics
Laurent Ottaviani
,
Stéphane Biondo
,
Mihai Lazar
,
Wilfried Vervisch
,
Julian Duchaine
WOCSDICE, May 2011, Catania, Italy. pp.181
Communication dans un congrès
hal-00661522v1
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Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate
Jean Lorenzzi
,
Nicoletta Jegenyes
,
Mihai Lazar
,
Dominique Tournier
,
Davy Carole
Communication dans un congrès
hal-00747669v1
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OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients
Duy Minh Nguyen
,
Christophe Raynaud
,
Mihai Lazar
,
Gontran Pâques
,
Sigo Scharnholz
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747298v1
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|
Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour
Stéphane Biondo
,
Mihai Lazar
,
Laurent Ottaviani
,
Wilfried Vervisch
,
Olivier Palais
Communication dans un congrès
hal-00661511v1
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State
Mihai Lazar
,
Fabrice Enoch
,
Farah Laariedh
,
Dominique Planson
,
Pierre Brosselard
Communication dans un congrès
hal-00661443v1
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|
Investigation of 3C-SiC lateral growth on 4H-SiC MESAs
Jean Lorenzzi
,
Nikoletta Jegenyes
,
Mihai Lazar
,
Dominique Tournier
,
Francois Cauwet
Communication dans un congrès
hal-00786369v1
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|
State of the art of High Temperature Power Electronics
Cyril Buttay
,
Dominique Planson
,
Bruno Allard
,
Dominique Bergogne
,
Pascal Bevilacqua
Microtherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès
hal-00413349v1
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Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters
Dominique Bergogne
,
Hervé Morel
,
Dominique Tournier
,
Bruno Allard
,
Dominique Planson
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès
hal-00372982v1
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
Sombel Diaham
,
Marie-Laure Locatelli
,
Thierry Lebey
,
Christophe Raynaud
,
Mihai Lazar
Communication dans un congrès
hal-00391472v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics
Dominique Planson
,
Dominique Tournier
,
Pascal Bevilacqua
,
Nicolas Dheilly
,
Hervé Morel
Communication dans un congrès
hal-00373016v1
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|
Process Optimization for High Temperature SiC Lateral Devices
Maher Soueidan
,
Mihai Lazar
,
Duy Minh Nguyen
,
Dominique Tournier
,
Christophe Raynaud
Communication dans un congrès
hal-00391358v1
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC
D M Nguyen
,
Christophe Raynaud
,
Mihai Lazar
,
H Vang
,
Dominique Planson
ICSCRM'2007, Oct 2007, Otsu, Japan
Communication dans un congrès
hal-02961607v1
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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode
Heu Vang
,
Sigo Scharnholz
,
Christophe Raynaud
,
Mihai Lazar
,
Gontran Pâques
Communication dans un congrès
hal-00391553v1
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|
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
Erwan Oliviero
,
Mihai Lazar
,
Heu Vang
,
Christiane Dubois
,
Pierre Cremilleu
Communication dans un congrès
hal-00368931v1
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Deep SiC etching with RIE
Mihai Lazar
,
Heu Vang
,
Pierre Brosselard
,
Christophe Raynaud
,
Pierre Cremilleu
E-MRS 2006, May 2006, Nice, France. pp.3886392
Communication dans un congrès
hal-03305997v1
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|
Ni-Al Ohmic contact to p-type 4H-SiC
Heu Vang
,
Mihai Lazar
,
Pierre Brosselard
,
Christophe Raynaud
,
Pierre Cremilleu
Communication dans un congrès
hal-03316263v1
|
|
Towards an integrated inverter based on lateral JFET SiC
J. Gié
,
Mihai Lazar
,
Dominique Planson
,
Dominique Bergogne
,
Pascal Bevilacqua
4th CIPS, Jun 2006, Naples, Italy. pp.171-176
Communication dans un congrès
hal-00413390v1
|
|
1.2 kV pin diodes with SiCrystal epiwafer
Heu Vang
,
Christophe Raynaud
,
Pierre Brosselard
,
Mihai Lazar
,
Pierre Cremilleu
Communication dans un congrès
hal-00358819v1
|
|
High energy N+ ion implantation in 4H–SiC
Erwan Oliviero
,
Mihai Lazar
,
A. Gardon
,
C. Peaucelle
,
A. Perrat
Communication dans un congrès
in2p3-00170330v1
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Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts
Gabriel Ferro
,
Maher Soueidan
,
Christophe Jacquier
,
Philippe Godignon
,
Th Stauden
Communication dans un congrès
hal-00391581v1
|
|
P-type SiC layers formed by VLS induced selective epitaxial growth
Mihai Lazar
,
C Jacquier
,
Ch Dubois
,
Christophe Raynaud
,
G Ferro
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
hal-02953086v1
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|
A 3.5 kV thyristor in 4H-SiC with a JTE periphery
Pierre Brosselard
,
Thierry Bouchet
,
Dominique Planson
,
Sigo Scharnholz
,
Gontran Pâques
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès
hal-02953080v1
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|
The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.
M Lazar
,
G Cardinali
,
C Raynaud
,
A Poggi
,
Dominique Planson
International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02941715v1
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|
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor
Pierre Brosselard
,
Volker Zorngiebel
,
Dominique Planson
,
Sigo Scharnholz
,
J.-P Chante
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02503456v1
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|
Electrothermal simulations of silicon carbide current limiting devices
Dominique Planson
,
J.P. Chante
,
M. Lazar
,
P. Brosselard
,
Christophe Raynaud
Communication dans un congrès
hal-02498210v1
|
|
Silicon Carbide specific components for power electronics system protection
J.-P Chante
,
Dominique Planson
,
Christophe Raynaud
,
Marie-Laure Locatelli
,
M. Lazar
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02503449v1
|
|
Design and simulation of a planar anode GTO thyristor on SiC
Pierre Brosselard
,
Dominique Planson
,
Sigo Scharnholz
,
V. Zorngiebel
,
Mihai Lazar
Communication dans un congrès
hal-00410085v1
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SiC-based current limiter devices
Jean-Pierre Chante
,
Dominique Tournier
,
Dominique Planson
,
Christophe Raynaud
,
Mihai Lazar
Communication dans un congrès
hal-04032970v1
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension
Christophe Raynaud
,
M. Lazar
,
Dominique Planson
,
J.-P Chante
,
Z. Sassi
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
hal-02498145v1
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Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Dominique Tournier
,
Xavier Jorda
,
Josep Montserrat
,
Dominique Planson
,
Christophe Raynaud
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
hal-02458130v1
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension
S.R. Wang
,
Christophe Raynaud
,
Dominique Planson
,
Mihai Lazar
,
Jean-Pierre Chante
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès
hal-02464381v1
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC
Roberta Nipoti
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Francesco Moscatelli
,
Andrea Scorzoni
,
Antonella Poggi
,
Gian Carlo Cardinali
Communication dans un congrès
hal-02485106v1
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4H-SiC bipolar power diodes realized by ion implantation
M. Lazar
,
Dominique Planson
,
K. Isoird
,
Marie-Laure Locatelli
,
Christophe Raynaud
Communication dans un congrès
hal-02145397v1
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects
M. Lazar
,
Christophe Raynaud
,
Dominique Planson
,
Marie-Laure Locatelli
,
K. Isoird
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02476227v1
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Experimental characterization of a 4H-SiC high voltage current limiting device
Franck Nallet
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Dominique Planson
,
Philippe Godignon
,
Marie-Laure Locatelli
,
Mihai Lazar
European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France
Communication dans un congrès
hal-03714731v1
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Study of 6H-SiC high voltage bipolar diodes under reverse biases
Karine Isoird
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Mihai Lazar
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France
Communication dans un congrès
hal-03712596v1
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Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
Mihai Lazar
,
Karine Isoird
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
Communication dans un congrès
hal-02275712v1
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization
K Isoird
,
M Lazar
,
Marie-Laure Locatelli
,
Christophe Raynaud
,
Dominique Planson
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès
hal-02975956v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Mihai Lazar
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
,
Dominique Planson
European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72
Communication dans un congrès
hal-02151711v1
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