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133

Mihai LAZAR - CNRS Researcher in Wide-Bandgap Semiconductor Materials


 

Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms.

 

Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.

 


Journal articles66 documents

  • Tanguy Phulpin, A Jaffre, J Alvares, M. Lazar. Development of SiC reliability study tool. Solid State Electronics Letters, 2019, 1 (2), pp.131-139. ⟨10.1016/j.ssel.2020.01.002⟩. ⟨hal-02486075⟩
  • Jean-François Mogniotte, Christophe Raynaud, Mihai Lazar, Loïc Michel. Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC. Romanian Journal of Information Science and Technology, Romanian Academy, 2019, 22 (2), pp.103-110. ⟨hal-02405784⟩
  • Jean-François Mogniotte, Dominique Tournier, Christophe Raynaud, Mihai Lazar, Dominique Planson, et al.. Silicon Carbide Technology of MESFET-Based Power Integrated Circuits. IEEE Journal of Emerging and Selected Topics in Power Electronics, Institute of Electrical and Electronics Engineers, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩. ⟨hal-01864533⟩
  • Gabriel Ferro, Selsabil Sejil, Mihai Lazar, D. Carole, C. Brylinski, et al.. Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions. physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600454⟩. ⟨hal-01615190⟩
  • Selsabil Sejil, Loïc Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters. Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩. ⟨hal-01648360⟩
  • Julien Pezard, Véronique Soulière, Mihai Lazar, Naoufel Haddour, François Buret, et al.. Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections. Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩. ⟨hal-01644735⟩
  • Julien Pézard, Mihai Lazar, Naoufel Haddour, Claude Botella, Pascale Roy, et al.. Realization of a graphene gate field effect transistor for electrochemical detection and biosensors. Thin Solid Films, Elsevier, 2016, ⟨10.1016/j.tsf.2016.04.031⟩. ⟨hal-01389621⟩
  • Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, et al.. Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩. ⟨hal-01388027⟩
  • Selsabil Sejil, Mihai Lazar, Frédéric Cayrel, Davy Carole, Christian Brylinski, et al.. Optimization of VLS Growth Process for 4H-SiC P/N Junctions. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩. ⟨hal-01388031⟩
  • Thi Thanh Huyen Nguyen, Mihai Lazar, Jean-Louis Augé, Hervé Morel, Luong Viet Phung, et al.. Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩. ⟨hal-01391838⟩
  • Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, et al.. A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩. ⟨hal-01387992⟩
  • Fatima Issa, Laurent Ottaviani, Dora Szalkai, Lvermeer Vermeeren, Vanessa Vervisch, et al.. 4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (3), pp.1976 - 1980. ⟨10.1109/TNS.2016.2565439⟩. ⟨hal-01389631⟩
  • D. Szalkai, R. Ferone, F. Issa, A. Klix, Mihai Lazar, et al.. Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (3), pp.1491 - 1498. ⟨10.1109/TNS.2016.2522921⟩. ⟨hal-01389627⟩
  • F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, et al.. Improvements in Realizing 4H-SiC Thermal Neutron Detectors. EPJ Web of Conferences, EDP Sciences, 2016, 106, ⟨10.1051/epjconf/201610605004⟩. ⟨hal-01391841⟩
  • Julien Pezard, Jérémy Lhuillier, Zakarya El-Friach, Véronique Soulière, Bertrand Vilquin, et al.. Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.941 - 944. ⟨10.4028/www.scientific.net/MSF.821-823.941⟩. ⟨hal-01391855⟩
  • Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantin Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩. ⟨hal-01391852⟩
  • Tony Abi-Tannous, Maher Soueidan, G. Ferro, Mihai Lazar, B. Toury, et al.. Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing. Applied Surface Science, Elsevier, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩. ⟨hal-01391845⟩
  • Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Berangère Toury, et al.. A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩. ⟨hal-01391858⟩
  • Mihai Lazar, Farah Laariedh, Pierre Cremillieu, Dominique Planson, Jean-Louis Leclercq. The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩. ⟨hal-01391844⟩
  • Mihai Lazar, Selsabil Sejil, L. Lalouat, Christophe Raynaud, D. Carole, et al.. P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices. Romanian Journal of Information Science and Technology, Romanian Academy, 2015, 18 (4), pp.329-342. ⟨hal-01626119⟩
  • Selsabil Sejil, Farah Laariedh, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩. ⟨hal-01387983⟩
  • Fatima Issa, Laurent Ottaviani, Vanessa Vervisch, Dora Szalkai, Ludo Vermeeren, et al.. Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.875 - 878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩. ⟨hal-01391850⟩
  • B. Berenguier, Laurent Ottaviani, Stéphane Biondo, Mihai Lazar, Frédéric Milesi, et al.. 4H-SiC P+N UV Photodiodes for Space Applications. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.644 - 647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩. ⟨hal-01391847⟩
  • Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique. European Physical Journal: Applied Physics, EDP Sciences, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩. ⟨hal-01387989⟩
  • Arthur Vo-Ha, Mickael Rebaud, Mihai Lazar, Alexandre Tallaire, Véronique Soulière, et al.. Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2014, 806, pp.33 - 37. ⟨10.4028/www.scientific.net/MSF.806.33⟩. ⟨hal-01391865⟩
  • Nicolas Thierry-Jebali, Mihai Lazar, A. Vo-Ha, D. Carole, V. Soulière, et al.. Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts. Materials Science Forum, Trans Tech Publications Inc., 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩. ⟨hal-01987147⟩
  • Arthur Vo Ha, Davy Carole, Mihai Lazar, Dominique Tournier, François Cauwet, et al.. p-Doped SiC Growth on Diamond Substrate by VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩. ⟨hal-01627777⟩
  • A. Vo-Ha, D. Carole, M. Lazar, D. Tournier, F. Cauwet, et al.. Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase. Diamond and Related Materials, Elsevier, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩. ⟨hal-02863887⟩
  • Farah Laariedh, Mihai Lazar, P. Cremillieu, J. Penuelas, J-L Leclercq, et al.. The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC. Semiconductor Science and Technology, IOP Publishing, 2013, 28 (4), ⟨10.1088/0268-1242/28/4/045007⟩. ⟨hal-01627844⟩
  • A. Vo-Ha, D. Carole, Mihai Lazar, Dominique Tournier, F. Cauwet, et al.. Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport. Thin Solid Films, Elsevier, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩. ⟨hal-01627830⟩
  • Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo Ha, Davy Carole, Véronique Soulière, et al.. Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩. ⟨hal-01627792⟩
  • N. Thierry-Jebali, A. Vo-Ha, D. Carole, Mihai Lazar, Gabriel Ferro, et al.. Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport. Applied Physics Letters, American Institute of Physics, 2013, 102 (21), ⟨10.1063/1.4809570⟩. ⟨hal-01627796⟩
  • Davy Carole, Arthur Vo-Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry-Jebali, et al.. Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩. ⟨hal-00803058⟩
  • Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩. ⟨hal-02166414⟩
  • Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. Materials Science Forum, Trans Tech Publications Inc., 2012. ⟨hal-02126341⟩
  • Nicolas Thierry-Jebali, Jawad Hassan, Mihai Lazar, Dominique Planson, Edwige Bano, et al.. Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes. Applied Physics Letters, American Institute of Physics, 2012, 101 (22), 222111, 4 p. ⟨10.1063/1.4768440⟩. ⟨hal-00769905⟩
  • Jean Lorenzzi, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.165-168. ⟨10.4028/www.scientific.net/MSF.717-720.165⟩. ⟨hal-00803063⟩
  • Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩. ⟨hal-00803061⟩
  • Duy Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩. ⟨hal-00803059⟩
  • Stéphane Biondo, Laurent Ottaviani, Mihai Lazar, Dominique Planson, Julian Duchaine, et al.. 4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩. ⟨hal-02275699⟩
  • Stéphane Biondo, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Vincent Le Borgne, et al.. 4H-silicon carbide thin junction based ultraviolet photodetectors. Thin Solid Films, Elsevier, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩. ⟨hal-00747356⟩
  • Elias Haddad, Christian Martin, Charles Joubert, Bruno Allard, Maher Soueidan, et al.. Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates. Advanced Materials Research, Trans Tech Publications, 2011, 324, pp.294-297. ⟨10.4028/www.scientific.net/AMR.324.294⟩. ⟨hal-00672240⟩
  • Duy Minh Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, Elsevier, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩. ⟨hal-00661429⟩
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, Trans Tech Publications, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩. ⟨hal-00799902⟩
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, Elsevier, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩. ⟨hal-00597432⟩
  • J. Lorenzzi, Mihai Lazar, Dominique Tournier, N. Jegenyes, D. Carole, et al.. 3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt. Crystal Growth & Design, American Chemical Society, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩. ⟨hal-00786365⟩
  • Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical beam induced current measurements: principles and applications to SiC device characterization. physica status solidi (a), Wiley, 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩. ⟨hal-00398971⟩
  • Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Heu Vang, Dominique Planson. Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC. Materials Science Forum, Trans Tech Publications Inc., 2008, Materials Science Forum, 600-603, pp.639-642. ⟨10.4028/www.scientific.net/MSF.600-603.639⟩. ⟨hal-00391560⟩
  • Maher Soueidan, Gabriel Ferro, Christophe Jacquier, Philippe Godignon, J. Pezoldt, et al.. Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts. Diamond and Related Materials, Elsevier, 2007, 16, pp.37-45. ⟨10.1016/j.diamond.2006.03.015⟩. ⟨hal-00188186⟩
  • E. Oliviero, M. Lazar, A. Gardon, C. Peaucelle, A. Perrat, et al.. High energy N+ ion implantation in 4H-SiC. Nucl. Instr. and Meth. B, 2007, 257, pp.265-269. ⟨hal-00252016⟩
  • Mihai Lazar, Heu Vang, Pierre Brosselard, Christophe Raynaud, Pierre Cremilleu, et al.. Deep SiC etching with RIE. Superlattices and Microstructures, Elsevier, 2006, 40 (4-6), pp.388-392. ⟨hal-00179458⟩
  • Heu Vang, Mihai Lazar, Pierre Brosselard, Christophe Raynaud, Pierre Cremilleu, et al.. Ni-Al ohmic contact to p-type 4H-SiC. Superlattices and Microstructures, Elsevier, 2006, 40 (4-6), pp.626-631. ⟨hal-00141426⟩
  • Pierre Brosselard, Dominique Planson, Sigo Scharnholz, Christophe Raynaud, V. Zorngiebel, et al.. Edge termination strategies for a 4 kV 4H-SiC thyristor. Solid-State Electronics, Elsevier, 2006, 50 (7-8), pp.1183-1188. ⟨hal-00140104⟩
  • Bruno Allard, Gérard Coquery, Laurent Dupont, Zoubir Khatir, Mihai Lazar, et al.. Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement. J3eA, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩. ⟨hal-01702019⟩
  • Christophe Raynaud, S. Wang, Dominique Planson, Mihai Lazar, Jean-Pierre Chante. OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension. Diamond and Related Materials, Elsevier, 2004, 13 (9), pp.1697-1703. ⟨hal-00140107⟩
  • Mihai Lazar, Christophe Raynaud, Dominique Planson, Jean-Pierre Chante, Marie-Laure Locatelli, et al.. Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers. Journal of Applied Physics, American Institute of Physics, 2003, 94 (5), pp.2992-2998. ⟨hal-00140110⟩
  • L. Ottaviani, M. Lazar, Marie-Laure Locatelli, J.P. Chante, V. Heera, et al.. Annealing Studies of Al-implanted 6H-SiC in an Induction Furnace. Materials Science and Engineering: B, Elsevier, 2002, 91-92, pp.325-328. ⟨hal-00084105⟩
  • Christophe Raynaud, Karine Isoird, Mihai Lazar, Cm Johnson, N. Wright. Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements. Journal of Applied Physics, American Institute of Physics, 2002, 91 (12), pp.9841-9847. ⟨hal-00141477⟩
  • Mihai Lazar, Christophe Raynaud, Dominique Planson, Marie-Laure Locatelli, K. Isoird, et al.. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects. Materials Science Forum, Trans Tech Publications Inc., 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩. ⟨hal-02151714⟩
  • K. Isoird, Mihai Lazar, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization. Materials Science Forum, Trans Tech Publications Inc., 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩. ⟨hal-02151720⟩
  • Laurent Ottaviani, Mihai Lazar, Marie-Laure Locatelli, Dominique Planson, Jean-Pierre Chante, et al.. Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments. Materials Science and Engineering: B, Elsevier, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩. ⟨hal-00140116⟩
  • Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing. Materials Science Forum, Trans Tech Publications Inc., 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩. ⟨hal-02151710⟩
  • F. Nallet, Dominique Planson, Philippe Godignon, Marie-Laure Locatelli, Mihai Lazar, et al.. Experimental characterization of a 4H-SiC high voltage current limiting device. Applied Surface Science, Elsevier, 2001, 184 (1-4), pp.404-407. ⟨hal-00140117⟩
  • Laurent Ottaviani, Mihai Lazar, Marie-Laure Locatelli, Yves Monteil, V. Heera, et al.. Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings. Applied Surface Science, Elsevier, 2001, 184 (1-4), pp.330-335. ⟨hal-00141498⟩
  • Karine Isoird, Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, et al.. Study of 6H-SiC high voltage bipolar diodes under reverse biases. Applied Surface Science, Elsevier, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩. ⟨hal-00140118⟩
  • Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Dominique Planson, Bruno Canut, et al.. Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation. Materials Science Forum, Trans Tech Publications Inc., 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩. ⟨hal-02275720⟩

Conference papers65 documents

  • Tanguy Phulpin, Alexandre Jaffré, José Alvarez, Mihai Lazar. SiC tools for reliability study. 42nd edition of International Semiconductor Conference - CAS 2019, Oct 2019, Sinaia, Romania. ⟨10.1109/SMICND.2019.8923664⟩. ⟨hal-02378321⟩
  • Jean-François Mogniotte, Christophe Raynaud, Mihai Lazar, Bruno Allard, Dominique Planson. SiC lateral Schottky diode technology for integrated smart power converter. 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩. ⟨hal-01864545⟩
  • Jean-François Mogniotte, Mihai Lazar, Christophe Raynaud, Bruno Allard. First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments. CAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩. ⟨hal-01646319⟩
  • Julien Pezard, V. Souliere, Mihai Lazar, Naoufel Haddour, François Buret, et al.. Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections. ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52. ⟨hal-02138738⟩
  • Selsabil Sejil, Loïc Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy. ECSCRM'16, Sep 2016, Halkidiki, Greece. ⟨hal-02138729⟩
  • Selsabil Sejil, Mihai Lazar, Davy Carole, Christian Brylinski, Dominique Planson, et al.. Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions. Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States. ⟨hal-02428659⟩
  • Tony Abi-Tannous, Maher Soueidan, G. Ferro, Mihai Lazar, Christophe Raynaud, et al.. Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase. ICSCRM, Oct 2015, Giardini Naxos, Italy. ⟨hal-02138520⟩
  • T. Nguyen-Bui, Mihai Lazar, Jean-Louis Augé, Hervé Morel, L. Phung, et al.. Vertical termination filled with adequate dielectric for SiC devices in HVDC applications. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy. ⟨hal-02138529⟩
  • J. Pezard, Jérémy Lhuillier, Z. El-Friakh, V. Souliere, Pedro Rojo Romeo, et al.. Realization of a single layer graphene field effect transistor. EMRS Spring Meeting, 2015, Lille, France. ⟨hal-01489358⟩
  • Mihai Lazar, Davy Carole, Christophe Raynaud, Gabriel Ferro, Selsabil Sejil, et al.. Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices. CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩. ⟨hal-01388019⟩
  • Julien Pézard, Mihai Lazar, Bertrand Vilquin, Pedro Rojo Romeo, Naoufel Haddour, et al.. Graphene Field Effect Transistors on SiC for High Speed and Bio-sensing Applications. JNTE (Journées Nationales des Technologies Emergentes), Nov 2015, Ecully, France. ⟨hal-01946338⟩
  • Tony Abi Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Bérangère Toury, et al.. On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63. ⟨hal-02428741⟩
  • Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantinos Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75. ⟨hal-02133681⟩
  • Selsabil Sejil, Farah Laariedh, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. 4H-SiC P-N junctions realized by VLS for JFET lateral structures. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61. ⟨hal-02133686⟩
  • Tony Abi Tannous, Maher Soueidan, Gabriel Ferro, Berangere Toury-Pierre, Mihai Lazar, et al.. Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065327⟩
  • Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065307⟩
  • J. Pezard, Jérémy Lhuillier, Z. El-Friakh, V. Souliere, Pédro Rojo Romeo, et al.. Graphene on 4H-SiC for terahertz transistors and ferroelectric non-volatile memories. CSCRM, 2014, Grenoble, France. ⟨hal-01489926⟩
  • Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩. ⟨hal-01388002⟩
  • Arthur Vo-Ha, Mickael Rebaud, Davy Carole, Mihai Lazar, Alexandre Tallaire, et al.. 3C-SiC Seeded Growth on Diamond Substrate by VLS Transport. ICSCRM 2013, Sep 2013, Miyazaki, Japan. pp.234-237, ⟨10.4028/www.scientific.net/MSF.778-780.234⟩. ⟨hal-02875458⟩
  • Nicolas Thierry-Jebali, Arthur Vo-Ha, Davy Carole, Mihai Lazar, Gabriel Ferro, et al.. Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport. HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩. ⟨hal-01391861⟩
  • Cyril Buttay, Amandine Masson, Jianfeng Li, Mark Johnson, Mihai Lazar, et al.. Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization. HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7. ⟨hal-00672619⟩
  • Davy Carole, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, et al.. Buried selective growth of p-doped SiC by VLS epitaxy. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747294⟩
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD. ⟨hal-00661500⟩
  • Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747298⟩
  • Jean Lorenzzi, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747299⟩
  • Jean Lorenzzi, Nicoletta Jegenyes, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩. ⟨hal-00747669⟩
  • Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩. ⟨hal-00747295⟩
  • Elias Haddad, Christian Martin, Charles Joubert, Bruno Allard, Maher Soueidan, et al.. Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates. CIMA, Mar 2011, Beyrouth, Lebanon. pp.Tu-P9. ⟨hal-00787193⟩
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Mihai Lazar, Gabriel Civrac, et al.. High-temperature behavior of SiC power diodes. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD. ⟨hal-00629225⟩
  • Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements. ICSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747300⟩
  • Farah Laariedh, Mihai Lazar, Pierre Cremilleu, Jean-Louis Leclercq, Dominique Planson. Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩. ⟨hal-00661507⟩
  • Laurent Ottaviani, Stéphane Biondo, Mihai Lazar, Wilfried Vervisch, Julian Duchaine, et al.. Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics. WOCSDICE, May 2011, Catania, Italy. pp.181. ⟨hal-00661522⟩
  • Stéphane Biondo, Laurent Ottaviani, Mihai Lazar, Dominique Planson, Julian Duchaine, et al.. 4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747301⟩
  • Stéphane Biondo, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Olivier Palais, et al.. Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩. ⟨hal-00661511⟩
  • Jean Lorenzzi, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, Francois Cauwet, et al.. Investigation of 3C-SiC lateral growth on 4H-SiC MESAs. CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩. ⟨hal-00786369⟩
  • Mihai Lazar, Fabrice Enoch, Farah Laariedh, Dominique Planson, Pierre Brosselard. Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State. CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩. ⟨hal-00661443⟩
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of High Temperature Power Electronics. Microtherm, Jun 2009, Lodz, Poland. pp.8-17. ⟨hal-00413349⟩
  • Dominique Bergogne, Hervé Morel, Dominique Tournier, Bruno Allard, Dominique Planson, et al.. Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2. ⟨hal-00372982⟩
  • Maher Soueidan, Mihai Lazar, Duy Nguyen, Dominique Tournier, Christophe Raynaud, et al.. Process Optimization for High Temperature SiC Lateral Devices. CSCRM, Sep 2008, Barcelone, Spain. pp.585-588, ⟨10.4028/www.scientific.net/MSF.615-617.585⟩. ⟨hal-00391358⟩
  • Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel, et al.. SiC Power Semiconductor Devices for new Applications in Power Electronics. 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩. ⟨hal-00373016⟩
  • Sombel Diaham, Marie-Laure Locatelli, Thierry Lebey, Christophe Raynaud, Mihai Lazar, et al.. Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage. CSCRM, Sep 2008, Barcelone, Spain. pp.695-698, ⟨10.4028/www.scientific.net/MSF.615-617.695⟩. ⟨hal-00391472⟩
  • D Nguyen, Christophe Raynaud, M Lazar, H Vang, Dominique Planson. Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC. ICSCRM'2007, Oct 2007, Otsu, Japan. ⟨hal-02961607⟩
  • Heu Vang, Sigo Scharnholz, Christophe Raynaud, Mihai Lazar, Gontran Pâques, et al.. Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode. CSCRM, Oct 2007, Otsu, Japan. pp.1011-1014, ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩. ⟨hal-00391553⟩
  • J. Gié, Mihai Lazar, Dominique Planson, Dominique Bergogne, Pascal Bevilacqua, et al.. Towards an integrated inverter based on lateral JFET SiC. 4th CIPS, Jun 2006, Naples, Italy. pp.171-176. ⟨hal-00413390⟩
  • Erwan Oliviero, Mihai Lazar, Heu Vang, Christiane Dubois, Pierre Cremilleu, et al.. Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC. CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩. ⟨hal-00368931⟩
  • Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremilleu, et al.. 1.2 kV pin diodes with SiCrystal epiwafer. CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩. ⟨hal-00358819⟩
  • Erwan Oliviero, Mihai Lazar, A. Gardon, C. Peaucelle, A. Perrat, et al.. High energy N+ ion implantation in 4H–SiC. 15th International Conference on Ion Beam Modification of Materials, Sep 2006, Taormina, Italy. pp.265-269, ⟨10.1016/j.nimb.2007.01.256⟩. ⟨in2p3-00170330⟩
  • E. Oliviero, M. Lazar, A. Gardon, C. Peaucelle, A. Perrat, et al.. High energy N+ ion implantation in 4H-SiC. 15th International Conference on Ion Beam Modification of Materials (IBMM 2006), Sep 2006, TAORMINA, Italy. ⟨hal-00252020⟩
  • Gabriel Ferro, Maher Soueidan, Christophe Jacquier, Philippe Godignon, Th Stauden, et al.. Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts. CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.275-278, ⟨10.4028/www.scientific.net/MSF.527-529.275⟩. ⟨hal-00391581⟩
  • Mihai Lazar, C Jacquier, Ch Dubois, Christophe Raynaud, G Ferro, et al.. P-type SiC layers formed by VLS induced selective epitaxial growth. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy. ⟨hal-02953086⟩
  • Pierre Brosselard, Thierry Bouchet, Dominique Planson, Sigo Scharnholz, Gontran Pâques, et al.. A 3.5 kV thyristor in 4H-SiC with a JTE periphery. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy. ⟨hal-02953080⟩
  • M Lazar, G Cardinali, C Raynaud, A Poggi, Dominique Planson, et al.. The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.. International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France. ⟨hal-02941715⟩
  • Dominique Planson, J.P. Chante, M. Lazar, P. Brosselard, Christophe Raynaud, et al.. Electrothermal simulations of silicon carbide current limiting devices. 2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩. ⟨hal-02498210⟩
  • Pierre Brosselard, Volker Zorngiebel, Dominique Planson, Sigo Scharnholz, J.-P Chante, et al.. Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. ⟨hal-02503456⟩
  • Christophe Raynaud, M. Lazar, Dominique Planson, J.-P Chante, Z. Sassi. Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. ⟨hal-02498145⟩
  • Pierre Brosselard, Dominique Planson, Sigo Scharnholz, V. Zorngiebel, Mihai Lazar, et al.. Design and simulation of a planar anode GTO thyristor on SiC. CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩. ⟨hal-00410085⟩
  • J.-P Chante, Dominique Planson, Christophe Raynaud, Marie-Laure Locatelli, M. Lazar, et al.. Silicon Carbide specific components for power electronics system protection. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. ⟨hal-02503449⟩
  • Dominique Tournier, Xavier Jorda, Josep Montserrat, Dominique Planson, Christophe Raynaud, et al.. Characterization of a 4H-SiC High Power Density Controlled Current Limiter. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02458130⟩
  • S.R. Wang, Christophe Raynaud, Dominique Planson, Mihai Lazar, Jean-Pierre Chante. OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02464381⟩
  • Roberta Nipoti, Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Gian Cardinali, et al.. Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC. 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩. ⟨hal-02485106⟩
  • M. Lazar, Christophe Raynaud, Dominique Planson, Marie-Laure Locatelli, K. Isoird, et al.. A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects. ICSCRM, Oct 2001, Tsukuba, Japan. ⟨hal-02476227⟩
  • K Isoird, M Lazar, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization. ICSCRM, Oct 2001, Tsukuba, Japan. ⟨hal-02975956⟩
  • M. Lazar, Dominique Planson, K. Isoird, Marie-Laure Locatelli, Christophe Raynaud, et al.. 4H-SiC bipolar power diodes realized by ion implantation. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352. ⟨hal-02145397⟩
  • Mihai Lazar, Karine Isoird, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, et al.. Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing. 43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States. ⟨hal-02275712⟩
  • Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing. European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72. ⟨hal-02151711⟩

Book sections1 document

  • Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009. ⟨hal-00661529⟩

Habilitation à diriger des recherches1 document

  • Mihai Lazar. Technologie pour l’intégration de composants semiconducteurs à large bande interdite. Energie électrique. INSA de Lyon; Université Claude Bernard Lyon 1, 2018. ⟨tel-01817587⟩