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Mihai Lazar

13
Documents

Présentation

Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms. Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.

Publications

jean-louis-leclercq
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The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

 Mihai Lazar , Farah Laariedh , Pierre Cremillieu , Dominique Planson , Jean-Louis Leclercq
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩
Article dans une revue hal-01391844v1
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The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC

 Farah Laariedh , Mihai Lazar , P. Cremillieu , J. Penuelas , J-L Leclercq
Semiconductor Science and Technology, 2013, 28 (4), ⟨10.1088/0268-1242/28/4/045007⟩
Article dans une revue hal-01627844v1

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

 Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson
Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩
Article dans une revue hal-04050541v1
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Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

 Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremillieu
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.611-614. ⟨10.4028/www.scientific.net/MSF.556-557.611⟩
Article dans une revue hal-04369331v1
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1.2 kV pin diodes with SiCrystal epiwafer

 Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩
Article dans une revue hal-04369138v1
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Deep SiC etching with RIE

 Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩
Article dans une revue hal-00179458v1
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Ni-Al ohmic contact to p-type 4H-SiC

 Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
Superlattices and Microstructures, 2006, 40 (4-6), pp.626-631
Article dans une revue hal-00141426v1
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Réalisation de contact ohmique sur SiC-4H type P

 Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson
JNRDM2011, May 2011, Paris, France
Communication dans un congrès hal-04560246v1
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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC

 Farah Laariedh , Mihai Lazar , Pierre Cremilleu , Jean-Louis Leclercq , Dominique Planson
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩
Communication dans un congrès hal-00661507v1

1.2 kV pin diodes with SiCrystal epiwafer

 Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremilleu
CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩
Communication dans un congrès hal-00358819v1

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

 Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremilleu
CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩
Communication dans un congrès hal-00368931v1
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Deep SiC etching with RIE

 Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
E-MRS 2006, May 2006, Nice, France. pp.3886392
Communication dans un congrès hal-03305997v1
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Ni-Al Ohmic contact to p-type 4H-SiC

 Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩
Communication dans un congrès hal-03316263v1