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Mihai Lazar
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Documents
Présentation
Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms.
Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
hal-04362529v1
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p-type SiC growth on diamond substrate by VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
hal-04423301v1
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Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrateHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩
Communication dans un congrès
hal-00747669v1
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Investigation of 3C-SiC lateral growth on 4H-SiC MESAsCSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩
Communication dans un congrès
hal-00786369v1
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