- 3
Mihai Lazar
3
Documents
Présentation
Dr. Mihai Lazar, CNRS Permanent Researcher HDR, WBG material - semiconductor technology specialist, a former member of the AMPERE lab, joined the L2n in sept 2018, developing these years a new SiC platform based on skills and means of the L2n and ESIEE cleanrooms.
Mihai Lazar received engineering and Ph.D.degrees from INSA, Lyon, France, in 1998 and 2002, respectively. In 2002, he joined the Ampere Laboratory (formerly named CEGELY), as a CNRS Researcher, focusing on power and high-temperature integrated systems based on wide bandgap materials as SiC. His strong experience in SiC technology was also successfully applied in the realization of SiC-based sensors as UV optical, radiation, and bio-detectors. He has authored or co-authored over 90 articles in refereed journal and in international conference proceedings.
Publications
- 3
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 3
- 2
- 1
|
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature EffectsMaterials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩
Article dans une revue
hal-02151714v1
|
|
Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC CharacterizationMaterials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩
Article dans une revue
hal-02151720v1
|
|
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF AnnealingMaterials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩
Article dans une revue
hal-02151710v1
|