Documentation
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Jérôme Billoué

Maître de conférences - HDR Université de Tours

24

Documents

Affiliations actuelles

230940

Identifiants chercheurs

jerome-billoue
0000-0002-0034-1302
Google Scholar : https://scholar.google.fr/citations?user=HJkBI9IAAAAJ&hl=fr
IdRef : 180638785

Contact

Domaines de recherche

Micro et nanotechnologies/Microélectronique Electronique

Publications

gael-gautier

	Localized protection of high aspect ratio trenches based on the anisotropy manipulation of plasma-polymerized fluoropolymer coating Douglas Silva de Vasconcellos , Romain Dailleau , Virginie Grimal , Thomas Defforge , Jérôme Billoué Materials Science in Semiconductor Processing, 2023, 156, pp.107275. ⟨10.1016/j.mssp.2022.107275⟩ Article dans une revue hal-04158301v1
	Integration of low-loss inductors on thin porous silicon membranes Benjamin Bardet , S. Desplobain , Jérôme Billoue , Laurent Ventura , Gaël Gautier Microelectronic Engineering, 2018, 194, pp.96 - 99. ⟨10.1016/j.mee.2018.03.020⟩ Article dans une revue hal-01771559v1
	Impregnation of High-Magnetization FeCo Nanoparticles in Mesoporous Silicon: An Experimental Approach Mathieu Lepesant , Benjamin Bardet , Lise-Marie Lacroix , Pierre Fau , Cyril Garnero Frontiers in Chemistry, 2018, 6, pp.609. ⟨10.3389/fchem.2018.00609⟩ Article dans une revue hal-02001841v1
	A Silicon-Embedded Inductor Surrounded by Porous Silicon for Improved Quality Factor Rongxiang Wu , Niteng Liao , Johnny Sin , Benjamin Bardet , Jérôme Billoue ECS Journal of Solid State Science and Technology, 2018, 7 (6), pp.Q112-Q115. ⟨10.1149/2.0141806jss⟩ Article dans une revue hal-02010242v1
	Shape-controlled electrochemical synthesis of mesoporous Si/Fe nanocomposites with tailored ferromagnetic properties Benjamin Bardet , Thomas Defforge , Beatrice Negulescu , Damien Valente , Jérôme Billoue Materials Chemistry Frontiers, 2017, 1 (1), pp.190 - 196. ⟨10.1039/c6qm00040a⟩ Article dans une revue hal-01741022v1
	Monolithic integration of low-pass filters with ESD protections on p+ silicon/porous silicon substrates Marie Capelle , Jérôme Billoue , Joël Concord , Patrick Poveda , Gaël Gautier Solid-State Electronics, 2016, 116, ⟨10.1016/j.sse.2015.11.026⟩ Article dans une revue hal-01310324v1
	In situ investigation of mesoporous silicon oxidation kinetics using infrared emittance spectroscopy Benjamin Bardet , Domingos de Sousa Meneses , Thomas Defforge , Jérôme Billoue , Gaël Gautier Physical Chemistry Chemical Physics, 2016, 18, pp.18201-18208. ⟨10.1039/c6cp02086k⟩ Article dans une revue hal-01740923v1
	P Type Porous Silicon Resistivity and Carrier Transport Samuel Ménard , Angélique Fèvre , Jérôme Billoue , Gael Gautier Journal of Applied Physics, 2015, 118 (10), pp.105703. ⟨10.1063/1.4930222⟩ Article dans une revue hal-01784762v1
	Porous Silicon/Silicon Hybrid Substrate Applied to the Monolithic Integration of Common-Mode and Bandpass RF Filters Marie Capelle , Jérôme Billoue , Patrick Poveda , Gael Gautier IEEE Transactions on Electron Devices, 2015, 62 (12), pp.4169-4173. ⟨10.1109/TED.2015.2483840⟩ Article dans une revue hal-01784767v1
	Evaluation of Mesoporous Silicon Substrates Strain for the Integration of Radio Frequency Circuits Marie Capelle , Jérôme Billoue , Thomas Defforge , Patrick Poveda , Gael Gautier Thin Solid Films, 2015, 585, pp.66-71. ⟨10.1016/j.tsf.2015.04.022⟩ Article dans une revue hal-01784771v1
	Monolithic integration of common mode filters with electrostatic discharge protection on silicon/porous silicon hybrid substrate Marie Capelle , Jérôme Billoue , J. Concord , P. Poveda , G. Gautier Applied Physics Letters, 2014, 104 (7), pp.072104. ⟨10.1063/1.4866162⟩ Article dans une revue hal-02183299v1
	Study of Porous Silicon Substrates for the Monolithic Integration of Radiofrequency Circuits Marie Capelle , Jérôme Billoue , Patrick Poveda , Gaël Gautier International Journal of Microwave and Wireless Technologies, 2014, 6 (1), pp.39-43. ⟨10.1017/S1759078713001050⟩ Article dans une revue hal-01784776v1
	RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide Gaël Gautier , Marie Capelle , Jérôme Billoue , Frédéric Cayrel , Patrick Poveda IEEE Electron Device Letters, 2012, 33 (4), pp.477-479. ⟨10.1109/LED.2012.2185478⟩ Article dans une revue hal-01810907v1
	Copper-selective electrochemical filling of macropore arrays for through-silicon via applications Thomas Defforge , Jérôme Billoue , Marianne Diatta , François Tran-Van , Gaël Gautier Nanoscale Research Letters, 2012, 7 (1), pp.375. ⟨10.1186/1556-276X-7-375⟩ Article dans une revue hal-01810906v1
	Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces Gaël Gautier , Frédéric Cayrel , Marie Capelle , Jérôme Billoue , Xi Song Nanoscale Research Letters, 2012, 7 (1), pp.367-373. ⟨10.1186/1556-276X-7-367⟩ Article dans une revue hal-01810904v1
	Non-Oxidized Porous Silicon-Based Power AC Switch Peripheries Samuel Menard , Angélique Fèvre , Damien Valente , Jérôme Billoue , Gaël Gautier Nanoscale Research Letters, 2012, 7 (1), pp.566-576. ⟨10.1186/1556-276X-7-566⟩ Article dans une revue hal-01810908v1
	RF performances of inductors integrated on localized p⁺-type porous silicon regions Marie Capelle , Jérôme Billoue , Patrick Poveda , Gaël Gautier Nanoscale Research Letters, 2012, 7 (1), pp.523-530. ⟨10.1186/1556-276X-7-523⟩ Article dans une revue hal-01810921v1
	Integration of RF inductors and filters on mesoporous silicon isolation layers Jérôme Billoue , Gaël Gautier , Laurent Ventura physica status solidi (a), 2011, 208 (6), pp.1449-1452. ⟨10.1002/pssa.201000027⟩ Article dans une revue hal-02983911v1
	N-Type Porous Silicon Substrates for Integrated RF Inductors Marie Capelle , Jérôme Billoue , Patrick Poveda , Gaël Gautier IEEE Transactions on Electron Devices, 2011, 58 (11), pp.4111-4114. ⟨10.1109/TED.2011.2164078⟩ Article dans une revue hal-04082517v1

	MAGNETIC CHARACTERIZATION OF POROUS SILICON – COBALT NANOPARTICLE COMPOSITE FOR RF DEVICE APPLICATION Thomas Defforge , Petra Granitzer , Jérôme Billoué , Brice Le Borgne , Gaël Gautier Porous Semiconductors - Science and Technology, Mar 2022, Lido Di Camaiore, Italy Communication dans un congrès hal-03980717v1
	Structural and electrical properties of ZrO2/Al2O3/ZrO2 3D MIM capacitor deposited by Atomic Layer Deposition Virgil Guillon , Jérôme Billoué , Thomas Defforge , Benoit Riou , Gaël Gautier International Conference on Electronics, Communications and Control Engineering (ICECC 2022), Mar 2022, Fukuoka (virtual event), Japan Communication dans un congrès hal-03980956v1
	PLANAR-TYPE TRIAC WITH POROUS SILICON-BASED EDGE STRUCTURE Sylvain Audière , Thomas Defforge , Benjamin Morillon , Emmanuel Collard , Jérôme Billoue Porous Semiconductors - Science and Technology, Mar 2022, Lido Di Camaiore, Italy Communication dans un congrès hal-03980838v1
	Hybrid Porous Silicon - Silicon substrate for RF devices integration Jérôme Billoue , Gaël Gautier , Thomas Defforge Workshop, European Microwave Week 2019, Sep 2019, Paris, France Communication dans un congrès hal-02481278v1
	(Invited) Recent Advances in Porous Silicon Based Microelectronic Devices Gaël Gautier , Jérôme Billoue , Thomas Defforge , Bin Lu , Benjamin Bardet AiMES 2018, Sep 2018, Cancùn, Mexico. pp.47-52, ⟨10.1149/08601.0047ecst⟩ Communication dans un congrès hal-02382064v1