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21

Jérôme BILLOUÉ


Journal articles18 documents

  • Rongxiang Wu, Niteng Liao, Johnny Sin, Benjamin Bardet, Jérôme Billoue, et al.. A Silicon-Embedded Inductor Surrounded by Porous Silicon for Improved Quality Factor. ECS Journal of Solid State Science and Technology, 2018, 7 (6), pp.Q112-Q115. ⟨10.1149/2.0141806jss⟩. ⟨hal-02010242⟩
  • B. Bardet, S. Desplobain, Jérôme Billoue, L. Ventura, Gaël Gautier. Integration of low-loss inductors on thin porous silicon membranes. Microelectronic Engineering, Elsevier, 2018, 194, pp.96 - 99. ⟨10.1016/j.mee.2018.03.020⟩. ⟨hal-01771559⟩
  • Rozenn Allanic, Denis Le Berre, Yves Quéré, Cédric Quendo, David Chouteau, et al.. Three-state Microwave Tunable Resonator Integrating Several Active Elements on Silicon Technology in a Global Design. IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers, 2018, 28 (2), pp.141-143. ⟨10.1109/LMWC.2017.2783186⟩. ⟨hal-01697967⟩
  • Rozenn Allanic, Denis Le Berre, Yves Quere, Cédric Quendo, David Chouteau, et al.. Continuously Tunable Resonator Using a Novel Triangular Doped Area on a Silicon Substrate. IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers, 2018, 28 (12), pp.1095-1097. ⟨10.1109/LMWC.2018.2877661⟩. ⟨hal-01926362⟩
  • Mathieu Lepesant, Benjamin Bardet, Lise-Marie Lacroix, Pierre Fau, Cyril Garnero, et al.. Impregnation of High-Magnetization FeCo Nanoparticles in Mesoporous Silicon: An Experimental Approach. Frontiers in Chemistry, Frontiers, 2018, 6, pp.609. ⟨10.3389/fchem.2018.00609⟩. ⟨hal-02001841⟩
  • Benjamin Bardet, Thomas Defforge, Beatrice Negulescu, Damien Valente, Jérôme Billoue, et al.. Shape-controlled electrochemical synthesis of mesoporous Si/Fe nanocomposites with tailored ferromagnetic properties. Materials chemistry frontiers, Royal Society of Chemistry, 2017, 1 (1), pp.190 - 196. ⟨10.1039/c6qm00040a⟩. ⟨hal-01741022⟩
  • Benjamin Bardet, Domingos de Sousa Meneses, Thomas Defforge, Jérôme Billoue, Gaël Gautier. In situ investigation of mesoporous silicon oxidation kinetics using infrared emittance spectroscopy. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2016, 18, pp.18201-18208. ⟨10.1039/c6cp02086k⟩. ⟨hal-01740923⟩
  • Marie Capelle, Jérôme Billoue, Joël Concord, Patrick Poveda, Gaël Gautier. Monolithic integration of low-pass filters with ESD protections on p+ silicon/porous silicon substrates. Solid-State Electronics, Elsevier, 2016, 116, ⟨10.1016/j.sse.2015.11.026⟩. ⟨hal-01310324⟩
  • Marie Capelle, Jérôme Billoue, Thomas Defforge, Patrick Poveda, Gael Gautier. Evaluation of Mesoporous Silicon Substrates Strain for the Integration of Radio Frequency Circuits. Thin Solid Films, 2015, 585, pp.66-71. ⟨10.1016/j.tsf.2015.04.022⟩. ⟨hal-01784771⟩
  • Samuel Ménard, Angélique Fèvre, Jérôme Billoue, Gael Gautier. P Type Porous Silicon Resistivity and Carrier Transport. Journal of Applied Physics, American Institute of Physics, 2015, 118 (10), pp.105703. ⟨10.1063/1.4930222⟩. ⟨hal-01784762⟩
  • Marie Capelle, Jérôme Billoue, Patrick Poveda, Gael Gautier. Porous Silicon/Silicon Hybrid Substrate Applied to the Monolithic Integration of Common-Mode and Bandpass RF Filters. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (12), pp.4169-4173. ⟨10.1109/TED.2015.2483840⟩. ⟨hal-01784767⟩
  • Marie Capelle, Jérôme Billoue, Patrick Poveda, Gaël Gautier. Study of Porous Silicon Substrates for the Monolithic Integration of Radiofrequency Circuits. International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2014, 6 (1), pp.39-43. ⟨10.1017/S1759078713001050⟩. ⟨hal-01784776⟩
  • M. Capelle, Jérôme Billoue, J. Concord, P. Poveda, G. Gautier. Monolithic integration of common mode filters with electrostatic discharge protection on silicon/porous silicon hybrid substrate. Applied Physics Letters, American Institute of Physics, 2014, 104 (7), pp.072104. ⟨10.1063/1.4866162⟩. ⟨hal-02183299⟩
  • Thomas Defforge, Jérôme Billoue, Marianne Diatta, François Tran-Van, Gaël Gautier. Copper-selective electrochemical filling of macropore arrays for through-silicon via applications. Nanoscale Research Letters, 2012, 7 (1), pp.375. ⟨10.1186/1556-276X-7-375⟩. ⟨hal-01810906⟩
  • Gaël Gautier, Frédéric Cayrel, Marie Capelle, Jérôme Billoue, Xi Song, et al.. Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces. Nanoscale Research Letters, 2012, 7 (1), pp.367-373. ⟨10.1186/1556-276X-7-367⟩. ⟨hal-01810904⟩
  • Marie Capelle, Jérôme Billoue, Patrick Poveda, Gaël Gautier. RF performances of inductors integrated on localized p+-type porous silicon regions. Nanoscale Research Letters, 2012, 7 (1), pp.523-530. ⟨10.1186/1556-276X-7-523⟩. ⟨hal-01810921⟩
  • Samuel Menard, Angélique Fèvre, Damien Valente, Jérôme Billoue, Gaël Gautier. Non-Oxidized Porous Silicon-Based Power AC Switch Peripheries. Nanoscale Research Letters, 2012, 7 (1), pp.566-576. ⟨10.1186/1556-276X-7-566⟩. ⟨hal-01810908⟩
  • Gaël Gautier, Marie Capelle, Jérôme Billoue, Frédéric Cayrel, Patrick Poveda. RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2012, 33 (4), pp.477-479. ⟨10.1109/LED.2012.2185478⟩. ⟨hal-01810907⟩

Conference papers3 documents

  • Rozenn Allanic, Denis Le Berre, Yves Quéré, C. Quendo, David Chouteau, et al.. Impact of the Doped Areas Sizes in the Performances of Microwave SPST Switches Integrated in a Silicon Substrate. Signal and Power Integrity, May 2018, BREST, France. ⟨hal-01806272⟩
  • Rozenn Allanic, Yves Quéré, Denis Le Berre, Cédric Quendo, David Chouteau, et al.. Co-conception de résonateurs hyperfréquences accordables à éléments d’accord intégrés dans un substrat silicium (résonateurs trois états à accord discret et résonateur continu). 20èmes Journées Nationales Microondes, May 2017, Saint-Malo, France. ⟨hal-01697963⟩
  • Rozenn Allanic, July Paola Cortes Nino, Jessica Benedicto, Denis Le Berre, Yves Quéré, et al.. Temperature Dependence of Tunable Resonators on FR4 and Silicon. Asia Pacific Microwave Conference Proceedings, APMC 2017, Nov 2017, Kuala Lumpur, Malaysia. ⟨10.1109/APMC.2017.8251683⟩. ⟨hal-01697956⟩