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Number of documents

4

Pr. Jean Paul Salvestrini


under construction


36086   

Journal articles4 documents

  • Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan, Suresh Sundaram, Youssef El Gmili, et al.. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask. Applied Physics Letters, American Institute of Physics, 2016, 108 (10), pp.103105. ⟨10.1063/1.4943205⟩. ⟨hal-01220089⟩
  • Suresh Sundaram, Youssef El Gmili, Renaud Puybaret, Li X., P.L. Bonanno, et al.. Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates. Applied Physics Letters, American Institute of Physics, 2015, 107 (113105), ⟨10.1063/1.4931132⟩. ⟨hal-01203766⟩
  • Suresh Sundaram, Renaud Puybaret, Xin Li, Youssef El Gmili, Konstantinos Pantzas, et al.. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template. Journal of Applied Physics, American Institute of Physics, 2014, 116 (16), pp.163105 - 163105-6. ⟨10.1063/1.4900531⟩. ⟨hal-01077688⟩
  • Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaran, et al.. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study. Acta Materialia, Elsevier, 2013, 61, pp.6587-6596. ⟨hal-00845424⟩