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Number of documents

82

Pr. Jean Paul Salvestrini


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Journal articles75 documents

  • P. Vuong, A. Mballo, S. Sundaram, G. Patriarche, Y. Halfaya, et al.. Single crystalline boron rich B(Al)N alloys grown by MOVPE. Applied Physics Letters, American Institute of Physics, 2020, 116 (4), pp.042101. ⟨10.1063/1.5135505⟩. ⟨hal-02464319⟩
  • J. Laifi, C. Saidi, N. Chaaben, A. Bchetnia, Y. El Gmili, et al.. Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates. Materials Science in Semiconductor Processing, Elsevier, 2019, 101, pp.253-261. ⟨10.1016/j.mssp.2019.06.006⟩. ⟨hal-02282621⟩
  • Taha Ayari, Suresh Sundaram, Xin Li, Saiful Alam, Chris Bishop, et al.. Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance. ACS photonics, American Chemical Society,, 2018, 5 (8), pp.3003-3008. ⟨10.1021/acsphotonics.8b00663⟩. ⟨hal-02158426⟩
  • H. Bouazizi, M. Bouzidi, N. Chaaben, Y. El Gmili, J.P. Salvestrini, et al.. Observation of the early stages of GaN thermal decomposition at 1200 °C under N 2. Materials Science and Engineering: B, Elsevier, 2018, 227, pp.16 - 21. ⟨10.1016/j.mseb.2017.10.002⟩. ⟨hal-01831065⟩
  • Saiful Alam, Suresh Sundaram, Xin Li, Miryam Jamroz, Youssef El Gmili, et al.. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission. physica status solidi (a), Wiley, 2017, 214 (8), ⟨10.1002/pssa.201600868⟩. ⟨hal-01830966⟩
  • Saiful Alam, Suresh Sundaram, Miryam Elouneg-Jamroz, Xin Li, Youssef El Gmili, et al.. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop. Superlattices and Microstructures, Elsevier, 2017, 104, pp.291 - 297. ⟨10.1016/j.spmi.2017.02.036⟩. ⟨hal-01830907⟩
  • J. Laifi, N. Chaaben, Y. El Gmili, J.P. Salvestrini, A. Bchetnia, et al.. Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature. Vacuum, Elsevier, 2017, 138, pp.8 - 14. ⟨10.1016/j.vacuum.2017.01.007⟩. ⟨hal-01830926⟩
  • Renaud Puybaret, David Rogers, Youssef El Gmili, Suresh Sundaram, Matthew Jordan, et al.. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology, Institute of Physics, 2017, 28 (19), ⟨10.1088/1361-6528/aa6a43⟩. ⟨hal-01830993⟩
  • Xin Li, Matthew Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, et al.. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. Scientific Reports, Nature Publishing Group, 2017, 7 (1), ⟨10.1038/s41598-017-00865-7⟩. ⟨hal-01830854⟩
  • M. Arif, W. Elhuni, J. Streque, S. Sundaram, S. Belahsene, et al.. Improving InGaN heterojunction solar cells efficiency using a semibulk absorber. Solar Energy Materials and Solar Cells, Elsevier, 2017, 159, pp.405 - 411. ⟨10.1016/j.solmat.2016.09.030⟩. ⟨hal-01420490⟩
  • Neslihan Ayarcı Kuruoğlu, Orhan Özdemir, Kutsal Bozkurt, Suresh Sundaram, Jean-Paul Salvestrini, et al.. Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I – V and admittance measurement. Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (50), ⟨10.1088/1361-6463/aa98b2⟩. ⟨hal-01831076⟩
  • Y. El Gmili, P. Bonanno, S. Sundaram, X. Li, R. Puybaret, et al.. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates. Optical Materials Express, OSA pub, 2017, 7 (2), ⟨10.1364/OME.7.000376⟩. ⟨hal-01830918⟩
  • Saiful Alam, Suresh Sundaram, Xin Li, Youssef El Gmili, Miryam Elouneg-Jamroz, et al.. Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well. Superlattices and Microstructures, Elsevier, 2017, 112, pp.279 - 286. ⟨10.1016/j.spmi.2017.09.032⟩. ⟨hal-01831029⟩
  • Saiful Alam, Suresh Sundaram, Helge Haas, Xin Li, Youssef El Gmili, et al.. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells. physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600496⟩. ⟨hal-01830889⟩
  • S. Amor, A. Ahaitouf, J.P. Salvestrini, A. Ougazzaden. Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode. Superlattices and Microstructures, Elsevier, 2017, 101, pp.529 - 536. ⟨10.1016/j.spmi.2016.11.011⟩. ⟨hal-01830928⟩
  • Walid El-Huni, Anne Migan-Dubois, Zakaria Djebbour, Paul L. Voss, Jean-Paul Salvestrini, et al.. Optimization of semibulk InGaN-based solar cell using realistic modeling. Solar Energy, Elsevier, 2017, 157, pp.687 - 691. ⟨10.1016/j.solener.2017.08.074⟩. ⟨hal-01630066⟩
  • Houda Bouazizi, Noureddine Chaaben, Youssef El Gmili, Amor Bchetnia, J.P. Salvestrini, et al.. Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree. Journal of Crystal Growth, Elsevier, 2016, 434, pp.72-76. ⟨10.1016/j.jcrysgro.2015.10.035⟩. ⟨hal-01256993⟩
  • Jihed Laifi, Noureddine Chaaben, Houda Bouazizi, Najla Fourati, C. Zerrouki, et al.. Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE. Superlattices and Microstructures, Elsevier, 2016, 94, pp.30-38. ⟨10.1016/j.spmi.2016.02.037⟩. ⟨hal-01277597⟩
  • Walid El-Huni, Anne Migan-Dubois, Zakaria Djebbour, Jean-Paul Salvestrini, Abdallah Ougazzaden. High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells. Progress in Photovoltaics, Wiley, 2016, 24 (11), pp.1436 - 1447. ⟨10.1002/pip.2807⟩. ⟨hal-01420488⟩
  • Yacine Halfaya, Chris Bishop, A. Soltani, Sundaram Suresh, Vincent Aubry, et al.. Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust. Sensors, MDPI, 2016, 16, pp.273. ⟨10.3390/s16030273⟩. ⟨hal-01277595⟩
  • Muhammad Arif, Jean-Paul Salvestrini, Jérémy Streque, Matthew Jordan, Youssef El Gmili, et al.. Role of V-pits in the performance improvement of InGaN solar cells. Applied Physics Letters, American Institute of Physics, 2016, 109 (13), pp.133507. ⟨10.1063/1.4963817⟩. ⟨hal-02385085⟩
  • Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan, Suresh Sundaram, Youssef El Gmili, et al.. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask. Applied Physics Letters, American Institute of Physics, 2016, 108 (10), pp.103105. ⟨10.1063/1.4943205⟩. ⟨hal-01220089⟩
  • Chris Bishop, Jean-Paul Salvestrini, Yacine Halfaya, Sundaram Suresh, Youssef El Gmili, et al.. Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors. Applied Physics Letters, American Institute of Physics, 2015, 106 (24), pp.243504. ⟨10.1063/1.4922803⟩. ⟨hal-01170536⟩
  • Sundaram Suresh, Renaud Puybaret, Xin Li, Youssef El Gmili, Jérémy Streque, et al.. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices. physica status solidi (a), Wiley, 2015, 212 (4), pp.740-744. ⟨10.1002/pssa.201400278⟩. ⟨hal-01170562⟩
  • Charles Munson, Muhammad Arif, Jeremy Streque, Belahsene Sofiane, Anthony Martinez, et al.. Model of Ni-63 battery with realistic PIN structure. Journal of Applied Physics, American Institute of Physics, 2015, 118 (10), pp.105101. ⟨10.1063/1.4930870⟩. ⟨hal-01203762⟩
  • Suresh Sundaram, Youssef El Gmili, Renaud Puybaret, Li X., P.L. Bonanno, et al.. Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates. Applied Physics Letters, American Institute of Physics, 2015, 107 (113105), ⟨10.1063/1.4931132⟩. ⟨hal-01203766⟩
  • Jihed Laifi, Noureddine Chaaben, Houda Bouazizi, Najla Fourati, C. Zerrouki, et al.. Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (001). Superlattices and Microstructures, Elsevier, 2015, 86, pp.472 - 482. ⟨10.1016/j.spmi.2015.08.015⟩. ⟨hal-01203774⟩
  • Xiaogai Li, S Sundaram, Pierre Disseix, G Le Gac, S Bouchoule, et al.. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm. Optical Materials Express, OSA pub, 2015, 5 (2), pp.381-392. ⟨10.1364/OME.5.000380⟩. ⟨hal-01108085⟩
  • Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, Frédéric Genty, et al.. BAlN thin layers for deep UV applications. physica status solidi (a), Wiley, 2015, 212 (4), pp.745-750. ⟨10.1002/pssa.201400199⟩. ⟨hal-01108100⟩
  • Xin Li, Gaëlle Le Gac, Sophie Bouchoule, Youssef El Gmili, Gilles Patriarche, et al.. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm. Journal of crystal growth 0022-0248, 2015, ⟨10.1016/j.crysgro.2015.09.013⟩. ⟨hal-01212591⟩
  • Li X., Suresh Sundaram, Youssef El Gmili, Frédéric Genty, Sophie Bouchoule, et al.. MOVPE grown periodic AlN/BAlN heterostructure with high boron content. Journal of Crystal Growth, Elsevier, 2015, 414, pp.119-122. ⟨10.1016/j.jcrysgro.2014.09.030⟩. ⟨hal-01212596⟩
  • Sofiane Belhasene, Noor Alhuda Al Saqri, Dler Jameel, Abdelmadjid Mesli, Anthony Martinez, et al.. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics, Penton Publishing Inc., 2015, 4 (4), pp.1090-1100. ⟨10.3390/electronics4041090⟩. ⟨hal-01257014⟩
  • Gaëlle Orsal, Youssef El Gmili, Nicolas Fressengeas, Jérémy Streque, Ryad Djerboub, et al.. Bandgap energy bowing parameter of strained and relaxed InGaN layers,. Optical Materials Express, OSA pub, 2014, 4 (5), pp.1030-1041. ⟨10.1364/OME.4.001030⟩. ⟨hal-01170545⟩
  • Marc Fontana, Mustapha Abarkan, Jean-Paul Salvestrini. Calculation of the dispersion of the electro-optical and second harmonic coefficients from the refractive index dispersion. Optical Materials, Elsevier, 2014, 36 (4), pp.764-768. ⟨10.1016/j.optmat.2013.11.020⟩. ⟨hal-01077689⟩
  • Suresh Sundaram, Renaud Puybaret, Xin Li, Youssef El Gmili, Konstantinos Pantzas, et al.. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template. Journal of Applied Physics, American Institute of Physics, 2014, 116 (16), pp.163105 - 163105-6. ⟨10.1063/1.4900531⟩. ⟨hal-01077688⟩
  • Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaran, et al.. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study. Acta Materialia, Elsevier, 2013, 61, pp.6587-6596. ⟨hal-00845424⟩
  • Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, et al.. Characteristics of the surface microstructures in thick InGaN layers on GaN. Optical Materials Express, OSA pub, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00872037⟩
  • M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En Naciri, et al.. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications. Applied Physics Letters, American Institute of Physics, 2012, 100, pp.051101. ⟨hal-00666779⟩
  • A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012, 522, pp.345-351. ⟨10.1016/j.tsf.2012.08.029⟩. ⟨hal-00720225⟩
  • A. Ahaitouf, J.P. Salvestrini, H. Srour. Accurate surface potential determination in Schottky diodes by use of correlated current and capacitance voltage measurements. Application to n-InP. Journal of Semiconductors, Beijing : Chinese Institute of Electronics ; Bristol : IOP,, 2011, 32 (10), pp.104002. ⟨10.1088/1674-4926/32/10/104002⟩. ⟨hal-00643996⟩
  • J.P. Salvestrini, L. Guilbert, M.D. Fontana, M. Abarkan, S. Gille. Analysis and control of DC drift in LiNbO3-based Mach-Zehnder modulators. Journal of Lightwave Technology, Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA), 2011, 29 (10), pp.1522-1534. ⟨10.1109/JLT.2011.2136322⟩. ⟨hal-00642162⟩
  • C. Sperandio, A. Laachachi, D. Rucha, C. Poilânec, P. Bourson, et al.. Use of functionalized nanosilica to improve thermo-mechanical properties of epoxy adhesive joint bonding aluminium substrates. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2010, 10 (4), pp.2844-2849. ⟨hal-00322143⟩
  • A. Khireddine, J.P. Salvestrini. Contribution separators wide margin processing of remote sensing data. IJCEE - International Journal of Computer and Electrical Engineering, International Academy Publishing (IAP), 2010, 2 (4), pp.1793-8163. ⟨10.7763/IJCEE.2010.V2.227⟩. ⟨hal-00473710⟩
  • A. Khireddine, J.P. Salvestrini. Signal processing techniques for the ultrasound characterization of complex materials. IJCEE - International Journal of Computer and Electrical Engineering, International Academy Publishing (IAP), 2009, 1 (5), pp.666-672. ⟨hal-00473709⟩
  • T. Moudakir, G. Orsal, N. Maloufi, S. Gautier, M. Bouchaour, et al.. Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE. European Physical Journal: Applied Physics, EDP Sciences, 2008, 43, pp.295-299. ⟨hal-00181707⟩
  • A. Ougazzaden, T. Moudakir, T. Aggerstam, G. Orsal, J.P. Salvestrini, et al.. GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE. physica status solidi (c), Wiley, 2008, 1-3, ⟨10.1002/pssc.200778490⟩. ⟨hal-00181670⟩
  • R. Claverie, J.P. Salvestrini, M.D. Fontana, P. Ney. New versatile and linear optical sensor based on electro-optical modulation and compensation. Review of Scientific Instruments, American Institute of Physics, 2008, 79, pp.123103-1 - 123403-8. ⟨10.1063/1.3036979⟩. ⟨hal-00302942⟩
  • M. Abarkan, J.P. Salvestrini, M.D. Fontana, Mireille Cuniot-Ponsard. Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal. Applied Physics B - Laser and Optics, Springer Verlag, 2008, 91, pp.489-492. ⟨10.1007/s00340-008-3033-3⟩. ⟨hal-00322257⟩
  • Mustapha Abarkan, Michel Aillerie, Jean-Paul Salvestrini, Marc Fontana, Edvard Kokanyan. Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystals. Applied Physics B - Laser and Optics, Springer Verlag, 2008, 92, pp.603-608. ⟨hal-00311729⟩
  • S.L. Bravina, N.V. Morozovsky, A.N. Morozovska, S. Gille, J.P. Salvestrini, et al.. Investigation of LiNbO3 and LiTaO3 single crystals for pyroelectric applications in the wide temperature range. Ferroelectrics, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 2007, 353, pp.636-645. ⟨hal-00186014⟩
  • M.D. Fontana, G. Montemezzani, J.P. Salvestrini. Proceeding of 8th European Conference on Applications of Polar Dielectrics (ECAPD-8). Part I of III. Metz, France, September 5-8, 2006 - Guest Editorial. Ferroelectrics, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 2007, 351, pp.IX-X. ⟨hal-00186016⟩
  • P. Segonds, B. Boulanger, B. Menaert, Julien Zaccaro, J.P. Salvestrini, et al.. Optical characterization of YCa4 O(BO3 )3 and Nd :YCa4 O(BO3 )3 crystals. Optical Materials, Elsevier, 2007, 29 (8), pp.975-982. ⟨hal-00186004⟩
  • Patricia Segonds, Benoit Boulanger, Bertrand Ménaert, Julien Zaccaro, J. P. Salvestrini, et al.. Optical characterizations of YCa4O(BO3)3 and NdlYCa4O(BO3)3 crystals. Optical Materials, Elsevier, 2007, 29 (8), pp.975-982. ⟨10.1016/j.optmat.2005.11.036⟩. ⟨hal-00405750⟩
  • H.L. Saadon, N. Theofanous, M. Aillerie, M. Abarkan, J.P. Salvestrini, et al.. The electro-optic r22 coefficients and acoustic contributions in LiTaO3 crystal. Journal of Optics A: Pure and Applied Optics, IOP Publishing, 2006, 8, pp.677-682. ⟨hal-00186002⟩
  • I. Franke, E. Talik, K. Roleder, K. Polgar, J.P. Salvestrini, et al.. Temperature stability of elastic and piezoelectric properties in LiNbO single crystal. Journal of Physics D: Applied Physics, IOP Publishing, 2005, 38 (24), pp.4308-4312. ⟨hal-00186006⟩
  • M. Abarkan, J.P. Salvestrini, D. Pelenc, M.D Fontana. Electro-optic, thermo-optic, and dielectric properties of YCOB and Nd :YCOB crystals : comparative study. Journal of the Optical Society of America B, Optical Society of America, 2005, 22 (2), pp.398-406. ⟨hal-00186010⟩
  • J.P. Salvestrini, L. Lebrun, M. Abarkan, G. Sebald, M. Wang, et al.. High frequency response and wavelength dispersion of the linear electro-optic effect in PZN-PT (88/12) single crystal. Applied Physics B - Laser and Optics, Springer Verlag, 2005, 80 (4-5), pp.413-417. ⟨hal-00186008⟩
  • I. Franke, J.P. Salvestrini, M. Fontana, K. Roleder. Complex elastic properties and piezoelectric activity in stoichiometric and congruent LiNbO3 single crystals. Ferroelectrics, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 2004, 304, pp.155-158. ⟨hal-00186020⟩
  • J.P. Salvestrini, M. Abarkan, M.D. Fontana. Comparative study of nonlinear crystals for electro-optic Q-switching of laser resonators. Optical Materials, Elsevier, 2004, 26, pp.449-458. ⟨hal-00186026⟩
  • M. Abarkan, J.P. Salvestrini, M. Aillerie, M. D. Fontana. Frequency dispersion of electro-optical properties over a wide range by means of time-response analysis. Applied optics, Optical Society of America, 2003, 42, pp.2346-2353. ⟨hal-00186028⟩
  • J.P. Salvestrini, Julien Zaccaro, M. Abarkan, A. Ibanez. Enhancement of the electro-optical properties in hybrid organic-inorganic crystals by molecular engineering. Journal of the Optical Society of America. B, Optical Physics, The Society, 2003, 20 (8), pp.1661-1665. ⟨hal-00186024⟩
  • Mustapha Abarkan, J.P. Salvestrini, M. D. Fontana, M. Aillerie. Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals. Applied Physics B - Laser and Optics, Springer Verlag, 2003, 76, pp.765-769. ⟨hal-00186027⟩
  • L. Guilbert, J.P. Salvestrini, Z. Czapla. Indirect Pockels effect in rubidium hydrogen selenate : measurement of the large r42 coefficient. Journal of the Optical Society of America. B, Optical Physics, The Society, 2000, 17 (12), pp.1980-1985. ⟨hal-00186033⟩
  • P. Kolata, L. Guilbert, M.D. Fontana, J.P. Salvestrini, Z. Czapla. Birefringence measurements by means of light-deflection at domain wal ls in ferroelastic crystals. Journal of the Optical Society of America. B, Optical Physics, The Society, 2000, 17 (12), pp.1973-1979. ⟨hal-00186030⟩
  • Julien Zaccaro, J.P. Salvestrini, A. Ibanez, P. Ney, M. D. Fontana. Electric-field frequency dependence of Pockels coefficients in 2-amino-5 nitropyridium dihydrogen phosphate. Journal of the Optical Society of America. B, Optical Physics, The Society, 2000, 17 (3), pp.427-432. ⟨hal-00186035⟩
  • L. Guilbert, J.P. Salvestrini, H. Hassan, M. D. Fontana. Combined effects due to phase, intensity and contrast in electrooptic modulation. Application to ferroelectric materials. IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers, 1999, 35 (3), pp.273-280. ⟨hal-00186038⟩
  • L. Guilbert, J.P. Salvestrini, M. D. Fontana, Z. Czapla. Correlation between dielectric and electrooptic properties related to domains dynamics in RbHSeO crystals. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 1998, 58 (5), pp.2523-2528. ⟨hal-00186045⟩
  • L. Guilbert, J.P. Salvestrini, F. X. Abrial, P. Kolata, M. D. Fontana, et al.. Optical characteristics of triclinic rubidium hydrogen selenate. Journal of the Optical Society of America. B, Optical Physics, The Society, 1998, 15 (3), pp.1009-116. ⟨hal-00186047⟩
  • P. Kolata, L. Guilbert, J.P. Salvestrini, M. Aillerie, M.D. Fontana. Electro-optical and deflection properties of ammonium and rubidium hydrogen selenate crystals - Application to development of a low power Pockels cell. Annales de Physique, EDP Sciences, 1998, 23, pp.163-164. ⟨hal-00186042⟩
  • A. Righi, J.P. Salvestrini, P. Bourson, R. L. Moreira, M. D. Fontana. Electrooptic properties of LiKSO4 and LiK1−x Rbx SO4 crystals. Applied Physics B - Laser and Optics, Springer Verlag, 1998, 67 (5), pp.559-562. ⟨hal-00186044⟩
  • J.P. Salvestrini, Julien Zaccaro, A. Ibanez, M.D. Fontana. Investigation of electrooptic modulation from organic-inorganic crystals. Applied Physics B - Laser and Optics, Springer Verlag, 1998, 67 (6), pp.761-763. ⟨hal-00186039⟩
  • J.P. Salvestrini, M. D. Fontana, B. Wyncke, F. Brehat. Comparative measurements of the frequency dependence of the electrooptical and dielectric coefficient in inorganic crystals. Nonlinear Optics, Informa UK (Taylor & Francis), 1997, 17, pp.271-280. ⟨hal-00186051⟩
  • J.P. Salvestrini, L. Guilbert, M. D. Fontana, Z. Czapla. Electrooptical properties of rubidium hydrogen selenate : influence of the DC electric field and origin of the large electrooptic coefficient. Journal of the Optical Society of America. B, Optical Physics, The Society, 1997, 14 (11), pp.2818-2822. ⟨hal-00186050⟩
  • J.P. Salvestrini, L. Guilbert, M. D. Fontana, Z. Czapla. Electrooptic investigations in ammonium hydrogen selenate NH4 HSeO4. Ferroelectrics, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 1996, 185, pp.257-260. ⟨hal-00186463⟩
  • J.P. Salvestrini, M. D. Fontana, M. Aillerie, Z. Czapla. New crystal with strong electrooptic effect : rubidium hydrogen selenate. Applied Physics Letters, American Institute of Physics, 1994, 64 (15), pp.1920-1922. ⟨hal-00186053⟩

Directions of work or proceedings2 documents

  • Hassane Ouazzani Chahdi, Omar Helli, Nour-Eddine Bourzgui, Leo Breuil, David Danovich, et al.. A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors. ECS Meeting, Journal of The Electrochemical Society, 31, pp.2310, 2020. ⟨hal-02879903⟩
  • Hassane Ouazzani Chahdi, Abdallah Ougazzaden, Jean-Paul Salvestrini, Hassan Maher, Ali Soltani, et al.. Sensors based on AlGaN/GaN HEMT for fast H 2 and O 2 detection and measurement at high temperature. 2019 IEEE SENSORS, Oct 2019, Montreal, IEEE, pp.1-4, 2020, ⟨10.1109/SENSORS43011.2019.8956568⟩. ⟨hal-02451449⟩

Patents5 documents

  • Laetitia Pradere, Yacine Halfaya, Abdallah Ougazzaden, Paul L Voss, J.P. Salvestrini, et al.. Capteur de détection de gaz d'un composant d'un gaz. France, N° de brevet: FR 1462278 2014. 2015. ⟨hal-01281130⟩
  • Chris Bishop, Abdallah Ougazzaden, J.P. Salvestrini, P.L. Voss, Laetitia Pradere, et al.. Capteur Schottky de detection d’un constituant d’un gaz d’echappement. France, N° de brevet: FR 1462277 2014. 2014. ⟨hal-01281183⟩
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