Nombre de documents

40


Article dans une revue12 documents

  • Jean-Marc Galliere, Florence Azaïs, Mariane Comte, Michel Renovell. Testing for Gate Oxide Short Defects using the Detectability Interval Paradigm. Information Technology, Oldenbourg Verlag, 2014, 56 (4), pp.173-181. <http://www.degruyter.com/view/j/itit>. <10.1515/itit-2013-1040>. <hal-01167054>
  • Frédéric Wrobel, Jean-Roch Vaillé, Denis Pantel, Luigi Dilillo, Jean-Marc Galliere, et al.. Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2386-2391. <http://ieeexplore.ieee.org/Xplore/home.jsp>. <10.1109/TNS.2013.2257847>. <lirmm-01234425>
  • Frédéric Wrobel, Jean-Roch Vaillé, Denis Pantel, Luigi Dilillo, Jean-Marc Galliere, et al.. A Silicon Diode-Based Detector for Investigations of Atmospheric Radiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (5), pp.3603-3608. <http://ieeexplore.ieee.org/Xplore/home.jsp>. <10.1109/TNS.2013.2264957>. <lirmm-01234419>
  • Paolo Rech, Jean-Marc Galliere, Patrick Girard, Alessio Griffoni, Jérôme Boch, et al.. Neutron-Induced Multiple Bit Upsets on Two Commercial SRAMs Under Dynamic-Stress. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4), pp.893-899. <10.1109/TNS.2012.2187218>. <lirmm-00805031>
  • Denis Pantel, Jean-Roch Vaillé, Frédéric Wrobel, Luigi Dilillo, Jean-Marc Galliere, et al.. Embedded silicon detector to investigate the natural radiative environment. Journal of Instrumentation, IOP Publishing, 2012, pp.1-11. <http://iopscience.iop.org/1748-0221/7/05/P05007>. <10.1088/1748-0221/7/05/P05007>. <lirmm-00805011>
  • Frédéric Wrobel, Jean-Roch Vaillé, Denis Pantel, Luigi Dilillo, Paolo Rech, et al.. Experimental Characterization of Atmospheric Radiation Environment with Stratospheric Balloon. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.945-951. <10.1109/TNS.2011.2136359>. <lirmm-00805045>
  • Paolo Rech, Jean-Marc Galliere, Patrick Girard, Frédéric Wrobel, Frédéric Saigne, et al.. Impact of Resistive-Open Defects on SRAM Error Rate Induced by Alpha Particles and Neutrons. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.855-861. <10.1109/TNS.2011.2123114>. <lirmm-00805046>
  • Jean-Marc Galliere, Michel Renovell, Florence Azaïs, Yves Bertrand. Viability of a Delay Testing of Gate Oxide Short Transistors. Journal of Computer Science and Technology, Iberoamerican Science & Technology Education Consortium, 2005, 20 (2), pp.6. <lirmm-00370370>
  • Jean-Marc Galliere, Michel Renovell, Florence Azaïs, Yves Bertrand. Delay Testing Viability of Gate Oxide Short Defect. Journal of Computer Science and Technology, Iberoamerican Science & Technology Education Consortium, 2005, 20 (2), pp.195-200. <lirmm-00105323>
  • R. Bouchakour, J.M. Portal, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand, et al.. A Compact DC Model of Gate Oxide Short Defect. Microelectronic Engineering, Elsevier, 2004, 72 (1-4), pp.140-148. <lirmm-00108564>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Modeling the Random Parameters Effects in a Non-Split Model of Gate Oxide Short. Journal of Electronic Testing, Springer Verlag, 2003, 19 (4), pp.10. <lirmm-00370365>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Modeling the Random Parameter Effects in a Non-Split Model of Gate Oxide Short. Journal of Electronic Testing, Springer Verlag, 2003, 19 (4), pp. 377-386. <lirmm-00269754>

Communication dans un congrès26 documents

  • Karel Amit, Mariane Comte, Jean-Marc Galliere, Florence Azaïs, Michel Renovell. Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect. LATS: Latin-American Test Symposium, Mar 2016, Foz do Iguacu, Brazil. 17th IEEE Latin-American Test Symposium, pp.129-134, 2016, <10.1109/LATW.2016.7483352>. <lirmm-01374300>
  • Karel Amit, Mariane Comte, Jean-Marc Galliere, Florence Azaïs, Michel Renovell. Impact of VT and Body-Biasing on Resistive short detection in 28nm UTBB FDSOI – LVT and RVT configurations. ISVLSI: IEEE Computer Society Annual Symposium on VLSI, Jul 2016, Pittsburgh, United States. Proc. IEEE Computer Society Annual Symposium on VLSI (ISVLSI’16), 2016, <http://www.eng.ucy.ac.cy/theocharides/isvlsi16/cfp.html>. <10.1109/ISVLSI.2016.102>. <lirmm-01374292>
  • Kheirallah Rida, Jean-Marc Galliere, Aida Todri, Gilles Ducharme, Nadine Azemard. Statistical Energy Study for 28nm FDSOI Devices. EuroSimE: Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Apr 2015, Budapest, Hungary. Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015 16th International Conference on, 2015, <10.1109/EuroSimE.2015.7103149>. <lirmm-01168602>
  • Frédéric Wrobel, Jean-Roch Vaillé, Denis Pantel, Luigi Dilillo, Jean-Marc Galliere, et al.. Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling. RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2012, Biarritz, France. pp.1-4, 2012, <http://www.ims-bordeaux.fr/RADECS2012/pages/pageDynamiqueSITEExt.php?guidPage=home_page>. <lirmm-00805150>
  • Denis Pantel, Jean-Roch Vaillé, Frédéric Wrobel, Luigi Dilillo, Jean-Marc Galliere, et al.. A Silicon Diode Based Detector for the Natural Radiative Environment Measurement in Altitude. IEEE (Nuclear Plasma Society) Real Time Conference, Jun 2012, Berkeley, CA, United States. pp.1-6, 2012, <10.1109/RTC.2012.6418104>. <lirmm-00805169>
  • Paolo Rech, Jean-Marc Galliere, Patrick Girard, Frédéric Wrobel, Frédéric Saigne, et al.. Dynamic-Stress Neutrons Test of Commercial SRAMs. IEEE Nuclear and Space Radiation Effects Conference, Jul 2012, Las Vegas, NV, United States. pp.1-4, 2011, <http://www.nsrec.com/>. <lirmm-00805349>
  • Jean-Marc Galliere, Luigi Dilillo. Versatile March Test Generator for Hands-on Memory Testing Laboratory. IEEE International Conference on Microelectronic Systems Education, Jun 2011, San Diego, CA, United States. IEEE, pp.41-42, 2011, <http://www.mseconference.org/>. <lirmm-00805300>
  • Luigi Dilillo, Paolo Rech, Jean-Marc Galliere, Patrick Girard, Frédéric Wrobel, et al.. Neutron Detection in Atmospheric Environment through Static and Dynamic SRAM-Based Test Bench. IEEE Latin American test Workshop, Mar 2011, Porto de Galinhas, Brazil. IEEE, pp.1-6, 2011, <https://www2.lirmm.fr/lirmm/interne/BIBLI/CDROM/MIC/2011/LATW_2011/panel.html>. <lirmm-00805120>
  • Paolo Rech, Jean-Marc Galliere, Patrick Girard, Alessio Griffoni, Frédéric Wrobel, et al.. Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM Arrays. RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2011, Seville, Spain. IEEE, pp.274-280, 2011, <http://www.radecs2011.org/>. <10.1109/RADECS.2011.6131396>. <lirmm-00805314>
  • Paolo Rech, Jean-Marc Galliere, Patrick Girard, Frédéric Wrobel, Frédéric Saigné, et al.. Impact of Resistive-Open Defects on SRAM sensitivity to Soft Errors. RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2010, Langenfeld, Austria. IEEE, 11th, 2010. <lirmm-00566847>
  • Jean-Marc Galliere, Florence Azaïs, Michel Renovell, Luigi Dilillo. Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models. DTIS'09: 4th IEEE International Conference on Design & Technology of Integrated Systems in Nanoscale ERA, Cairo, Egypt. pp.225-229, 2009. <lirmm-00370798>
  • Luigi Dilillo, Frédéric Wrobel, Jean-Marc Galliere, Frédéric Saigne. Neutron Detection through an SRAM-Based Test Bench. IEEE. IWASI'09: International Workshop On Advances in Sensors and Interfaces, Jun 2009, Trani, Italy. IEEE, pp.64-69, 2009, <http://iwasi.poliba.it/iwasi2009/Home.html>. <10.1109/IWASI.2009.5184769>. <lirmm-00438842>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde Short. DBT'02: IEEE International Workshop on Defect Based Testing, Monterey (USA), France. pp. 11-16, 2002. <lirmm-00269333>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. A Non-Split Model for Realistic Gate Oxide Short in CMOS Technology. DCIS'02: 17th International Conference on Design of Circuits and Integrated Systems, Santander (Spain), pp.197-204, 2002. <lirmm-00268432>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Modeling Gate Oxide Short Defects in CMOS Minimum Transistors. ETW'02: IEEE European Test Workshop, Corfu, Greece, pp.15-20, 2002. <lirmm-00268527>
  • Jean-Marc Galliere, Philippe Papet, Laurent Latorre. A 2-D VHDL-AMS Model for Disk-Shape Piezoelectric Transducers. IEEE Behavioral Modeling and Simulation Conference, Sep 2008, San Jose, USA, pp.5, 2008. <lirmm-00370390>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand, J.M. Portal, et al.. GOSMOS: A Gate Oxide Short Defect Embedded in a MOS Compact Model. LATW'03: 4th IEEE Latin American Test Workshop, Natal, Brazil. pp.6-11, 2003. <lirmm-00269604>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Low Voltage Testing of Gate Oxide Short in CMOS Technology. DDECS'02: 5th IEEE International Workshop on Design and Diagnostics of Electronic Circuits and Systems, Brno, Czech Republic, pp.168-174, 2002. <lirmm-00268526>
  • Jean-Marc Galliere, Philippe Papet, Laurent Latorre. A Unified Electrical SPICE Model for Piezoelectric Transducers. IEEE Behavioral Modeling and Simulation Conference, Sep 2007, San Jose, USA, pp.5, 2007. <lirmm-00370388>
  • Jean-Marc Galliere. Programmable Analog Array in Control-Systems Laboratory. IEEE Mediterranean Conference on Control and Automation, Jun 2007, Athens, Greece, pp.5, 2007. <lirmm-00370394>
  • Jean-Marc Galliere, Guy Cathébras. Stream Manager, Easy CAD Tools Switching in Academic Context. IEEE Conference on Microelectronic Systems Education, Jun 2007, San Diego, USA, pp.2, 2007. <lirmm-00370396>
  • Guy Cathébras, Jean-Marc Galliere. Stream Manager: Une Assistance à la Gestion des Projets Microélectroniques. O. Bonnaud, H. Lhermite. CNFM'06 : 9èmes Journées Pédagogiques, Nov 2006, Saint-Malo (France), Centre Commun de Microélectronique de l'Ouest, pp.5-8, 2006. <lirmm-00117324>
  • I. Polian, Kundu Sandip, Jean-Marc Galliere, P. Engelke, Michel Renovell, et al.. Resistive Bridge Fault Model Evolution From Conventional to Ultra Deep Submicron Technologies. VTS'05: 23rd IEEE VLSI Test Symposium, May 2005, Palm Springs, CA (USA), IEEE Computer Society, pp.343-348, 2005. <lirmm-00105997>
  • S. Bernardini, P. Masson, J.M. Portal, Jean-Marc Galliere, Michel Renovell. Impact of Gate Oxide Reduction Failure on Analog Applications: Example of the Current Mirror. LATW'04: 5th IEEE Latin American Test Workshop, Mar 2004, Cartagena, pp.12-17, 2004. <lirmm-00108659>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Delay Testing of MOS Transistor with Gate Oxide Short. ATS: Asian Test Symposium, Nov 2003, Xian, China. 12th IEEE AsianTest Symposium, pp.168-173, 2003. <lirmm-00269641>
  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Boolean and Current Detection of MOS Transistor with Gate Oxide Short. IEEE International Test Conference, Oct 2001, Baltimore, USA, pp.10, 2001. <lirmm-00370400>

Poster1 document

  • Jean-Marc Galliere, Paolo Rech, Patrick Girard, Luigi Dilillo. A Roaming Memory Test Bench for Detecting Particle Induced SEUs. ITC'2010: International Test Conference, Nov 2010, Austin, Texas, United States. pp.N/A, 2010. <lirmm-00537879>

Rapport1 document

  • Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand, J.M. Portal. A Compact Model for Electrical Simulation of MOS Transistor with Gate Oxide Short Defect. 04080, 2004. <lirmm-00109221>