CV Accueil - Archive ouverte HAL

	Optimization of VLS Growth Process for 4H-SiC P/N Junctions Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩ Article dans une revue hal-01388031v1
	TiAl Ohmic Contact on GaN, in Situ High or Low Doped or Si Implanted, Epitaxially Grown on Sapphire or Silicon Frédéric Cayrel , Olivier Ménard , Arnaud Yvon , Nicolas Thierry-Jébali , Christian Brylinsky physica status solidi (a), 2012, 209 (6), pp.1059-1066. ⟨10.1002/pssa.201127564⟩ Article dans une revue hal-01810914v1
	Low temperature (down to 450° C) annealed TiAl contacts on N-type gallium nitride characterized by differential scanning calorimetry N. Thierry-Jebali , O. Menard , R. Chiriac , E. Collard , C. Brylinski physica status solidi (c), 2011, 8 (2), pp.447--449 Article dans une revue hal-00763471v1

	Investigations on the origin of the ohmic behavior for Ti/Al based contacts on n-type GaN Nicolas Thierry-Jebali , Olivier Ménard , Christiane Dubois , Dominique Tournier , Emmanuel Collard HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.208-212, ⟨10.4028/www.scientific.net/MSF.711.208⟩ Communication dans un congrès hal-00747672v1
	Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers Christian Brylinski , Olivier Ménard , Nicolas Thierry-Jebali , Frédéric Cayrel , Daniel Alquier 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nürnberg, Germany. pp.879-884, ⟨10.4028/www.scientific.net/MSF.645-648.879⟩ Communication dans un congrès hal-02864869v1

Frédéric CAYREL