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Frédéric Cayrel


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Article dans une revue20 documents

  • Wahid Khalfaoui, Thomas Oheix, Georgio El-Zammar, Roland Benoit, Frédéric Cayrel, et al.. Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layer. physica status solidi (a), Wiley, 2017, 214 (4), 〈10.1002/pssa.201600438〉. 〈hal-01721021〉
  • M Mercone, B Belmeguenai, M Malo, F. Ott, Frédéric Cayrel, et al.. Investigation of ferromagnetic heterogeneities in La 0.7 Sr 0.3 MnO 3 thin films. Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (4), 〈10.1088/1361-6463/aa50be〉. 〈hal-01862707〉
  • Balint Fodor, Emil Agocs, Benjamin Bardet, Thomas Defforge, Frederic Cayrel, et al.. Porosity and Thickness Characterization of Porous Si and Oxidized Porous Si layers – an ultraviolet-visible-mid Infrared Ellipsometry Study. Microporous and Mesoporous Materials, 2016, 227, pp.112-120. 〈10.1016/j.micromeso.2016.02.039〉. 〈hal-01784759〉
  • Selsabil Sejil, Mihai Lazar, Frédéric Cayrel, Davy Carole, Christian Brylinski, et al.. Optimization of VLS Growth Process for 4H-SiC P/N Junctions. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.205 - 208. 〈10.4028/www.scientific.net/MSF.858.205〉. 〈hal-01388031〉
  • Abhishek Singh Dahiya, Charles Opoku, R. A. Sporea, B. Sarvankumar, Guylaine Poulin-Vittrant, et al.. Single-Crystalline ZnO Sheet Source-Gated Transistors. Scientific Reports, Nature Publishing Group, 2016, 6 (1), 〈10.1038/srep19232〉. 〈hal-01831009〉
  • Georgio El-Zammar, Wahid Khalfaoui, Thomas Oheix, Arnaud Yvon, Emmanuel Collard, et al.. Surface State of GaN after Rapid-Thermal-Annealing Using AlN Cap-Layer. Applied Surface Science, 2015, 355, pp.1044-1050. 〈10.1016/j.apsusc.2015.07.201〉. 〈hal-01784768〉
  • Abhishek Singh Dahiya, Charles Opoku, Christopher Oshman, Guylaine Poulin-Vittrant, Frédéric Cayrel, et al.. Zinc Oxide Sheet Field-Effect Transistors. Applied Physics Letters, 2015, 107 (3), pp.033105. 〈10.1063/1.4927270〉. 〈hal-01831015〉
  • Charles Opoku, Abhishek Singh Dahiya, Frédéric Cayrel, Guylaine Poulin-Vittrant, Daniel Alquier, et al.. Fabrication of Field-Effect Transistors and Functional Nanogenerators Using Hydrothermally Grown ZnO Nanowires. RSC Advances, Royal Society of Chemistry, 2015, 5 (86), pp.69925-69931. 〈10.1039/C5RA11450K〉. 〈hal-01831012〉
  • Charles Opoku, Abhishek Singh Dahiya, Christopher Oshman, Christophe Daumont, Frédéric Cayrel, et al.. Fabrication of High Performance Field-Effect Transistors and Practical Schottky Contacts Using Hydrothermal ZnO Nanowires. Nanotechnology, Institute of Physics, 2015, 26 (35), pp.355704. 〈hal-01831014〉
  • Abhishek Singh Dahiya, Charles Opoku, Daniel Alquier, Guylaine Poulin-Vittrant, Frederic Cayrel, et al.. Controlled Growth of 1D and 2D ZnO Nanostructures on 4H-SiC Using Au Catalyst. Nanoscale Research Letters, 2014, 9 (1), pp.379. 〈10.1186/1556-276X-9-379〉. 〈hal-01831021〉
  • Balint Fodor, Frédéric Cayrel, E. Agocs, Daniel Alquier, M. Fried, et al.. Characterization of In-Depth Cavity Distribution after Thermal Annealing of Helium-Implanted Silicon and Gallium Nitride. Thin Solid Films, 2014, 571, pp.567-572. 〈10.1016/j.tsf.2014.02.014〉. 〈hal-01784778〉
  • Gaël Gautier, Jérôme Biscarrat, Damien Valente, Thomas Defforge, A. Gary, et al.. Systematic Study of Anodic Etching of Highly Doped N-Type 4H-SiC in Various HF Based Electrolytes. Journal of The Electrochemical Society, Electrochemical Society, 2013, 160 (9), pp.D372-D379. 〈10.1149/2.082309jes〉. 〈hal-01810897〉
  • Gaël Gautier, Marie Capelle, Jérôme Billoue, Frédéric Cayrel, Patrick Poveda. RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2012, 33 (4), pp.477-479. 〈10.1109/LED.2012.2185478〉. 〈hal-01810907〉
  • Frédéric Cayrel, Anne-Elisabeth Bazin, Mohamed Lamhamdi, Y. Benchanaa, Olivier Ménard, et al.. Si Implanted Reactivation in GaN Grown on Sapphire Using AlN and Oxide Cap Layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 272, pp.137-140. 〈10.1016/j.nimb.2011.01.050〉. 〈hal-01810910〉
  • Mohamed Lamhamdi, Frédéric Cayrel, Anne-Elisabeth Bazin, Emmanuel Collard, Daniel Alquier. Carrier Profiling in Si-Implanted Gallium Nitride by Scanning Capacitance Microscopy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 275, pp.37-40. 〈10.1016/j.nimb.2011.12.003〉. 〈hal-01810912〉
  • Gaël Gautier, Frédéric Cayrel, Marie Capelle, Jérôme Billoue, Xi Song, et al.. Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces. Nanoscale Research Letters, 2012, 7 (1), pp.367-373. 〈10.1186/1556-276X-7-367〉. 〈hal-01810904〉
  • Daniel Alquier, Frédéric Cayrel, Olivier Ménard, Anne-Elisabeth Bazin, Arnaud Yvon, et al.. Recent Progresses in GaN Power Rectifier. Japanese Journal of Applied Physics, 2012, 51 (1S), pp.01AG08. 〈hal-01810909〉
  • Frédéric Cayrel, Olivier Ménard, Arnaud Yvon, Nicolas Thierry-Jébali, Christian Brylinsky, et al.. TiAl Ohmic Contact on GaN, in Situ High or Low Doped or Si Implanted, Epitaxially Grown on Sapphire or Silicon. physica status solidi (a), 2012, 209 (6), pp.1059-1066. 〈10.1002/pssa.201127564〉. 〈hal-01810914〉
  • David Schenk, Alexis Bavard, Eric Frayssinet, Xi Song, Frédéric Cayrel, et al.. Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates. Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2012, 5 (2), pp.025504. 〈hal-01810916〉
  • N. Thierry-Jebali, O. Menard, R. Chiriac, E. Collard, C. Brylinski, et al.. Low temperature (down to 450° C) annealed TiAl contacts on N-type gallium nitride characterized by differential scanning calorimetry. physica status solidi (c), Wiley, 2011, 8 (2), pp.447--449. 〈hal-00763471〉

Communication dans un congrès1 document

  • Nicolas Thierry-Jebali, Olivier Ménard, Christiane Dubois, Dominique Tournier, Emmanuel Collard, et al.. Investigations on the origin of the ohmic behavior for Ti/Al based contacts on n-type GaN. HeteroSiC and WASMPE, Jun 2011, Tours, France. Trans Tech Publications Inc., Proc. of the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, 711, pp.208-212, 2012, 〈10.4028/www.scientific.net/MSF.711.208〉. 〈hal-00747672〉

Autre publication1 document