CV Accueil - Archive ouverte HAL

	Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy Charles Rebora , Ruomeng Huang , Gabriela P. Kissling , Marc Bocquet , C H (kees) De Groot Nanotechnology, 2018, ⟨10.1088/1361-6528/aae6db⟩ Article dans une revue hal-01951256v1
	Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate D. Deleruyelle , Magali Putero , T. Ouled-Khachroum , Marc Bocquet , M.V. Coulet Solid-State Electronics, 2012, ⟨10.1016/j.sse.2012.06.010⟩ Article dans une revue emse-00767177v1
	Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories J. Amouroux , V. Della Marca , E. Petit , D. Deleruyelle , Magali Putero MRS Proceedings, 2011, 1337, ⟨10.1557/opl.2011.975⟩ Article dans une revue hal-01760606v1
	Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing Magali Putero , Toufik Ouled-Khachroum , Marie-Vanessa Coulet , Damien Deleruyelle , Eric Ziegler Journal of Applied Crystallography, 2011, 44, pp.858-864. ⟨10.1107/S0021889811024095⟩ Article dans une revue hal-01951268v1

	Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte Charles Rebora , Marc Bocquet , T. Ouled-Khachroum , Magali Putero , Damien Deleruyelle 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩ Communication dans un congrès hal-01804660v1

Damien Deleruyelle