Damien Deleruyelle
81
Documents
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Elaboration and imprint consideration in HfZrO2 ferroelectric capacitorsHigh k Workshop 2023, NamLab, May 2023, Dresden, Germany
Communication dans un congrès
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Study of Imprint Dynamics in HZO Ferroelectric CapacitorsInternational Symposium on Applications of Ferroelectrics 2023, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès
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Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès
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How ALD deposition analysis can help PVD deposition process!9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France
Communication dans un congrès
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1S1R sub-threshold operation in Crossbar Arrays for Neural Networks hardware implementationMIXDES 2023, Jun 2023, CRACOVIE, Poland
Communication dans un congrès
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Engineering the nano and micro structures of sputtered HfZrO2 thin films15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès
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Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJEMRS 2023 Fall Meeting, European Materials Research Society, Sep 2023, Warsaw (Poland), Poland
Communication dans un congrès
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Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel JunctionsISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès
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Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitorsEMRS 2023 Fall Meeting, European Materials Research Society (E-MRS), Sep 2023, Warsaw, Poland
Communication dans un congrès
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Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 KISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
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Influence of the electrode interface on the properties of ferroelectric HfZrO2High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany
Communication dans un congrès
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Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced FerroelectricityISAF-PFM-ECAPD 2022, Jun 2022, Tours, France
Communication dans un congrès
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A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switchingISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
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How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical propertiesEMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
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Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced propertiesEMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
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Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited)High Performance Embedded Architecture and Compilation, Computing Systems Week, (HiPEAC CSW) Autumn 2021, Oct 2021, Lyon, France
Communication dans un congrès
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Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405195⟩
Communication dans un congrès
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Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctionsEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
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Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited)67th Annual IEEE International Electron Devices Meeting (IEDM 2021), Dec 2021, San Fransisco, United States. ⟨10.1109/IEDM19574.2021.9720572⟩
Communication dans un congrès
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Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1S1R crossbar arrays2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩
Communication dans un congrès
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Effect of bottom electrodes on HZO thin film propertiesInternational Symposium on Applications of Ferroelectrics (ISAF) 2021, https://isaf-isif-pfm2021.org/, May 2021, Sydney, Australia
Communication dans un congrès
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Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applicationsJournées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France
Communication dans un congrès
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Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic ApplicationEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
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Optimization of RRAM and OTS selector for advanced low voltage CMOS compatibility2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108126⟩
Communication dans un congrès
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Crosspoint Memory Arrays: Principle, Strengths and Challenges2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108143⟩
Communication dans un congrès
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CBRAM devices with a water casted solid polymer electrolyte for flexible electronic applications2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Oct 2019, Stockholm, France. pp.1-5, ⟨10.1109/NMDC47361.2019.9083996⟩
Communication dans un congrès
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Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩
Communication dans un congrès
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Optimization of resistive memories using In2O3 nanostructures integration with a CMOS Back-End-Off-Line processAnnual Conference on Nanotechnology and Advanced Materials, Nov 2019, San Francisco, United States
Communication dans un congrès
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Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI TechnologyIEEE International Memory Workshop (IMW 2018), May 2018, Kyoto, Japan. ⟨10.1109/IMW.2018.8388839⟩
Communication dans un congrès
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Conductive Bridge Random Access Memory devices with Ecofriendly Solid Polymer Electrolyte for flexible electronics applications11th International Symposium on Organic Flexible Electronics (ISFOE), Jul 2018, Thessaloniki, Greece
Communication dans un congrès
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Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩
Communication dans un congrès
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Conductive Bridge Random Access Memory Devices Based on an Ecofriendly Solid Polymer Electrolyte8th Advanced Functional Materials and Devices, Aug 2018, Leuven, Belgium
Communication dans un congrès
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Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156
Communication dans un congrès
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Communication dans un congrès
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Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩
Communication dans un congrès
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Analytical study of complementary memristive synchronous logic gates2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. ⟨10.1109/NanoArch.2013.6623047⟩
Communication dans un congrès
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Analytical study of complementary memristive synchronous logic gates2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, France. ⟨10.1109/NanoArch.2013.6623047⟩
Communication dans un congrès
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Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. ⟨10.1109/NEWCAS.2013.6573578⟩
Communication dans un congrès
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Crossbar architecture based on 2R complementary resistive switching memory cell 2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩
Communication dans un congrès
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Design challenges for prototypical and emerging memory concepts relying on resistance switching2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. ⟨10.1109/CICC.2011.6055316⟩
Communication dans un congrès
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On the electrical variability of resistive-switching memory devices based on NiO oxide2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States
Communication dans un congrès
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Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layerESSDERC 2008 - 38th European Solid-State Device Research Conference, Sep 2008, Edinburgh, United Kingdom. pp.218-221
Communication dans un congrès
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Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystalsSilicon Nano-electronics Workshop 2002, 2002, Honolulu, United States
Communication dans un congrès
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A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystalsSilicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404
Communication dans un congrès
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Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliabilityIRPS 2023 (IEEE International Reliability Physics Symposium), Mar 2023, Monterey, Californie, United States. 2023, ⟨10.1109/IRPS48203.2023.10117882⟩
Poster de conférence
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Influence of bottom electrodes on HZO thin film featuresMaterial Challenge for Memory Applications 2021, Apr 2021, New York, United States
Poster de conférence
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Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctionsPoster de conférence hal-03275569v1 |
Emerging Memory ConceptsDesign Technology for Heterogeneous Embedded Systems, Springer Netherlands, pp.339-364, 2012, ⟨10.1007/978-94-007-1125-9_16⟩
Chapitre d'ouvrage
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A single Nano-Dot Embedded in a Plate CapacitorSattler, Klaus D. Handbook of Nanophysics - Nanoelectronics and Nanophotonics, CRC Press, 2010, 978-1-4200-7550-2
Chapitre d'ouvrage
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Granularity Exploration for Logic in Memory2020
Autre publication scientifique
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