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Damien Deleruyelle

81
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors

Greta Segantini , Benoît Manchon , Infante Ingrid C. , Matthieu Bugnet , Rabei Barhoumi
Advanced Electronic Materials, 2023, pp.2300171. ⟨10.1002/aelm.202300171⟩
Article dans une revue hal-04186567v1

Machine Learning Surrogate Model for Acceleration of Ferroelectric Phase-Field Modeling

Kévin Alhada-Lahbabi , Damien Deleruyelle , Brice Gautier
ACS Applied Electronic Materials, 2023, 5 (7), pp.3894-3907. ⟨10.1021/acsaelm.3c00601⟩
Article dans une revue hal-04322377v1
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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.

Benoît Manchon , Greta Segantini , Nicolas Baboux , Pedro Rojo Romeo , Rabei Barhoumi
physica status solidi (RRL) - Rapid Research Letters, 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩
Article dans une revue hal-03609773v1

Water-soluble polyethylene-oxide polymer based memristive devices

Prabir Mahato , Etienne Puyoo , Sébastien Pruvost , Damien Deleruyelle
Microelectronic Engineering, 2022, 260, pp.111806. ⟨10.1016/j.mee.2022.111806⟩
Article dans une revue hal-03840652v1

Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data

Lucas Reganaz , Eduardo Esmanhotto , Nazim Ait Abdelkader , Joel Minguet Lopez , Niccolo Castellani
physica status solidi (a), 2022, 219 (13), pp.2100753. ⟨10.1002/pssa.202100753⟩
Article dans une revue hal-03840622v1
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Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer

Greta Segantini , Rabei Barhoumi , Benoît Manchon , Ingrid Cañero Infante , Pedro Rojo Romeo
physica status solidi (RRL) - Rapid Research Letters, 2022, 2100583, pp.2100583. ⟨10.1002/pssr.202100583⟩
Article dans une revue hal-03759538v1
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Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by Nanocavities

Sergio Gonzalez Casal , Xiaofei Bai , Kevin Alhada‐lahbabi , Bruno Canut , Bertrand Vilquin
Advanced Electronic Materials, 2022, pp.2200077. ⟨10.1002/aelm.202200077⟩
Article dans une revue hal-03662877v1
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1S1R optimization for high‐frequency inference on binarized spiking neural networks

Joel Minguet Lopez , Quentin Rafhay , Manon Dampfhoffer , Lucas Reganaz , Niccolo Castellani
Advanced Electronic Materials, 2022, 2022 (8), pp.2200323. ⟨10.1002/aelm.202200323⟩
Article dans une revue cea-03707409v1
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Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technology

P.V. Guenery , E.A. León Pérez , K. Ayadi , N. Baboux , D. Deleruyelle
Solid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Article dans une revue hal-03116248v1
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OxRAM+OTS optimization for Binarized Neural Network hardware implementation

Joel Minguet Lopez , Tifenn Hirtzlin , Manon Dampfhoffer , Laurent Grenouillet , Lucas Reganaz
Semiconductor Science and Technology, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩
Article dans une revue hal-03418653v1
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Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices

Silvana Guitarra , P. Mahato , D. Deleruyelle , L. Raymond , L. Trojman
Solid-State Electronics, 2021, 185, pp.108055. ⟨10.1016/j.sse.2021.108055⟩
Article dans une revue hal-03252877v1

Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy

Charles Rebora , Ruomeng Huang , Gabriela P. Kissling , Marc Bocquet , C H (kees) De Groot
Nanotechnology, 2018, ⟨10.1088/1361-6528/aae6db⟩
Article dans une revue hal-01951256v1
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Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology

Jean-Michel Portal , Marc Bocquet , Santhosh Onkaraiah , Mathieu Moreau , Hassen Aziza
IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686. ⟨10.1109/TNANO.2017.2703985⟩
Article dans une revue hal-01745418v1

A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

Francesco Maria Puglisi , Damien Deleruyelle , Jean-Michel Portal , Paolo Pavan , Luca Larcher
physica status solidi (a), 2016, 213 (2), pp.289-301. ⟨10.1002/pssa.201532828⟩
Article dans une revue hal-01435201v1
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Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application

A. Prakash , D. Deleruyelle , J. Song , Marc Bocquet , H. Hwang
Applied Physics Letters, 2015, 106 (23), pp.233104. ⟨10.1063/1.4922446⟩
Article dans une revue hal-01737306v1
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Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Marc Bocquet , Hassen Aziza , Weisheng Zhao , Yue Zhang , Santhosh Onkaraiah
Journal of Low Power Electronics and Applications, 2014, 4 (1), pp.1-14. ⟨10.3390/jlpea4010001⟩
Article dans une revue hal-01737320v1
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Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

Marc Bocquet , Damien Deleruyelle , Hassen Aziza , Christophe Muller , Jean-Michel Portal
IEEE Transactions on Electron Devices, 2014, 61 (3), pp.674 - 681. ⟨10.1109/TED.2013.2296793⟩
Article dans une revue hal-01737291v1

Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

Weisheng Zhao , Mathieu Moreau , Erya Deng , Yue Zhang , Jean-Michel Portal
IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61 (2), pp.443 - 454. ⟨10.1109/TCSI.2013.2278332⟩
Article dans une revue hal-01743999v1

An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies

Jean-Michel Portal , Marc Bocquet , Mathieu Moreau , Hassen Aziza , Damien Deleruyelle
Journal of Electronic Science and Technology, 2014, 12 (2), pp.173 - 181. ⟨10.3969/j.issn.1674-862X.2014.02.007⟩
Article dans une revue hal-01745646v1

Photo-Cross-Linked Diblock Copolymer Micelles: Quantitative Study of Photochemical Efficiency, Micelles Morphologies and their Thermal Behavior

Dao Le , Livie Liénafa , Trang N. T. Phan , Damien Deleruyelle , Renaud Bouchet
Macromolecules, 2014, 47 (7), pp.2420--2429. ⟨10.1021/ma5000656⟩
Article dans une revue hal-01460517v1

Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells

W. Zhao , M. Portal , W. Kang , Mathieu Moreau , Y. Zhang
Journal of Parallel and Distributed Computing, 2014, 74 (6), pp.2484 - 2496. ⟨10.1016/j.jpdc.2013.08.004⟩
Article dans une revue hal-01744000v1
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Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

H. Hraziia , Adam Makosiej , Giorgio Palma , Jean-Michel Portal , Marc Bocquet
Solid-State Electronics, 2013, 90, pp.99-106. ⟨10.1016/j.sse.2013.02.045⟩
Article dans une revue hal-01744003v1
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Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications

Jean-Michel Portal , Marc Bocquet , Damien Deleruyelle , Christophe Muller
Journal of Low Power Electronics, 2012, 8 (1), pp.1 - 10. ⟨10.1166/jolpe.2012.1172⟩
Article dans une revue hal-01745507v1
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Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

D. Deleruyelle , Magali Putero , T. Ouled-Khachroum , Marc Bocquet , M.V. Coulet
Solid-State Electronics, 2012, ⟨10.1016/j.sse.2012.06.010⟩
Article dans une revue emse-00767177v1

Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

Ch. Muller , D. Deleruyelle , R. Müller , M. Thomas , A. Demolliens
Solid-State Electronics, 2011, 56 (1), pp.168-174. ⟨10.1016/j.sse.2010.10.006⟩
Article dans une revue hal-02266382v1

Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing

Magali Putero , Toufik Ouled-Khachroum , Marie-Vanessa Coulet , Damien Deleruyelle , Eric Ziegler
Journal of Applied Crystallography, 2011, 44, pp.858-864. ⟨10.1107/S0021889811024095⟩
Article dans une revue hal-01951268v1
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Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

Marc Bocquet , Damien Deleruyelle , Christophe Muller , Jean-Michel Portal
Applied Physics Letters, 2011, 98 (26), ⟨10.1063/1.3605591⟩
Article dans une revue hal-01779321v1

Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories

J. Amouroux , V. Della Marca , E. Petit , D. Deleruyelle , Magali Putero
MRS Proceedings, 2011, 1337, ⟨10.1557/opl.2011.975⟩
Article dans une revue hal-01760606v1

Study of Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Thin Films Deposited by Sol-Gel Method

A. Demolliens , R. Müller , L. Goux , D. Deleruyelle , D. Wouters
Ferroelectrics, 2010, 397 (1), pp.112-121. ⟨10.1080/00150193.2010.484748⟩
Article dans une revue hal-02271962v1

Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures

A. Demolliens , Ch. Muller , R. Müller , C. Turquat , L. Goux
Journal of Crystal Growth, 2010, 312 (22), pp.3267-3275. ⟨10.1016/j.jcrysgro.2010.08.008⟩
Article dans une revue hal-02271976v1

Degradation of floating gate memory reliability by few electron phenomena

G. Molas , D. Deleruyelle , B. Desalvo , Gérard Ghibaudo , M. Gely
IEEE Transactions on Electron Devices, 2006, 53, pp.2610
Article dans une revue hal-00145101v1

Elaboration and imprint consideration in HfZrO2 ferroelectric capacitors

Jordan Bouaziz , Greta Segantini , Benoît Manchon , Ingrid Cañero Infante , Nicolas Baboux
High k Workshop 2023, NamLab, May 2023, Dresden, Germany
Communication dans un congrès hal-04136940v1

Study of Imprint Dynamics in HZO Ferroelectric Capacitors

Benoît Manchon , Greta Segantini , Pedro Rojo Romeo , Ingrid Canero Infante , Dominique Drouin
International Symposium on Applications of Ferroelectrics 2023, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès hal-04190736v1

Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity

Greta Segantini , Rabei Barhoumi , Benoît Manchon , Ingrid Canero Infante , Mathieu Bugnet
15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès hal-04055083v1

How ALD deposition analysis can help PVD deposition process!

Bertrand Vilquin , Damien Deleruyelle , Jordan Bouaziz , Martine Le Berre , Céline Chevalier
9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France
Communication dans un congrès hal-04308002v1
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1S1R sub-threshold operation in Crossbar Arrays for Neural Networks hardware implementation

Joel Minguet Lopez , Manon Dampfhoffer , Tifenn Hirtzlin , Lucas Reganaz , Laurent Grenouillet
MIXDES 2023, Jun 2023, CRACOVIE, Poland
Communication dans un congrès cea-04161135v1

Engineering the nano and micro structures of sputtered HfZrO2 thin films

Jordan Bouaziz , Greta Segantini , Benoît Manchon , Rabei Barhoumi , Ingrid Cañero Infante
15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès hal-04053582v1

Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJ

Greta Segantini , Benoît Manchon , Infante Ingrid C. , Matthieu Bugnet , Pedro Rojo Romeo
EMRS 2023 Fall Meeting, European Materials Research Society, Sep 2023, Warsaw (Poland), Poland
Communication dans un congrès hal-04216334v1

Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel Junctions

Greta Segantini , Benoît Manchon , Infante Ingrid C. , Matthieu Bugnet , Rabei Barhoumi
ISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès hal-04195857v1

Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitors

Benoît Manchon , Greta Segantini , Pedro Rojo Romeo , Dominique Drouin , Damien Deleruyelle
EMRS 2023 Fall Meeting, European Materials Research Society (E-MRS), Sep 2023, Warsaw, Poland
Communication dans un congrès hal-04213060v1

Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 K

Benoit Manchon , Dorian Coffineau , Greta Segantini , Nicolas Baboux , Pedro Rojo Romeo
ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès hal-03719069v1

Influence of the electrode interface on the properties of ferroelectric HfZrO2

Jordan Bouaziz , Greta Segantini , Benoît Manchon , Rabei Barhoumi , Ingrid Cañero Infante
High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany
Communication dans un congrès hal-03775873v1

Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced Ferroelectricity

Greta Segantini , Benoit Manchon , Rabei Barhoumi , Pedro Rojo Romeo , Ingrid Cañero Infante
ISAF-PFM-ECAPD 2022, Jun 2022, Tours, France
Communication dans un congrès hal-03715029v1
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A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching

Ingrid C. Infante , Sergio Gonzalez Casal , Xiaofei Bai , Kevin Alhada‐lahbabi , Sara Gonzalez
ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès hal-03719104v1

How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties

Jordan Bouaziz , Greta Segantini , Benoit Manchon , Rabei Barhoumi , Ingrid Cañero Infante
EMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès hal-03682220v1

Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties

Greta Segantini , Benoit Manchon , Rabei Barhoumi , Pedro Rojo Romeo , Ingrid Cañero Infante
EMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès hal-03690321v1

Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited)

Cristell Maneux , Mukherjee Chhandak , Marina Deng , Maeva Dubourg , Lucas Réveil
High Performance Embedded Architecture and Compilation, Computing Systems Week, (HiPEAC CSW) Autumn 2021, Oct 2021, Lyon, France
Communication dans un congrès hal-03408071v1
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Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization

J Minguet Lopez , L. Hudeley , L. Grenouillet , D Alfaro Robayo , J. Sandrini
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405195⟩
Communication dans un congrès hal-03333678v1

Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions

Greta Segantini , Benoit Manchon , Pedro Rojo Romeo , Rabei Barhoumi , Nicolas Baboux
EMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès hal-03368741v1
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Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited)

Cristell Maneux , Mukherjee Chhandak , Marina Deng , Maeva Dubourg , Lucas Réveil
67th Annual IEEE International Electron Devices Meeting (IEDM 2021), Dec 2021, San Fransisco, United States. ⟨10.1109/IEDM19574.2021.9720572⟩
Communication dans un congrès hal-03408078v1

Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1S1R crossbar arrays

J. Minguet Lopez , N. Castellani , L. Grenouillet , L. Reganaz , G. Navarro
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩
Communication dans un congrès hal-03622145v1

Effect of bottom electrodes on HZO thin film properties

Bertrand Vilquin , Greta Segantini , Benoit Manchon , Ingrid Cañero Infante , Pedro Rojo Romeo
International Symposium on Applications of Ferroelectrics (ISAF) 2021, https://isaf-isif-pfm2021.org/, May 2021, Sydney, Australia
Communication dans un congrès hal-03274229v1

Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications

Greta Segantini , Pedro Rojo Romeo , Benoit Manchon , Rabei Barhoumi , Damien Deleruyelle
Journées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France
Communication dans un congrès hal-03372588v1

Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application

Benoit Manchon , Greta Segantini , Pedro Rojo Romeo , Nicolas Baboux , Rabei Barhoumi
EMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès hal-03354311v1

Optimization of RRAM and OTS selector for advanced low voltage CMOS compatibility

J. Minguet Lopez , D. Alfaro Robayo , L. Grenouillet , C. Carabasse , G. Navarro
2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108126⟩
Communication dans un congrès hal-03029496v1

Crosspoint Memory Arrays: Principle, Strengths and Challenges

G. Molas , D. Alfaro Robayo , J. Minguet Lopez , L. Grenouillet , C. Carabasse
2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108143⟩
Communication dans un congrès hal-03029495v1

CBRAM devices with a water casted solid polymer electrolyte for flexible electronic applications

Prabir Mahato , Etienne Puyoo , Damien Deleruyelle , Sébastien Pruvost
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Oct 2019, Stockholm, France. pp.1-5, ⟨10.1109/NMDC47361.2019.9083996⟩
Communication dans un congrès hal-03029533v1

Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration

D. Alfaro Robayo , D. Deleruyelle , E. Vianello , N. Castellani , L. Ciampolini
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩
Communication dans un congrès hal-03029486v1

Optimization of resistive memories using In2O3 nanostructures integration with a CMOS Back-End-Off-Line process

Abdelkader Souifi , Pierre-Vincent Guenery , D. Deleruyelle , Liviu Militaru , J. Moeyaert
Annual Conference on Nanotechnology and Advanced Materials, Nov 2019, San Francisco, United States
Communication dans un congrès hal-03029510v1
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Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology

Jean-Jacques Fagot , Philippe Boivin , V. Della Marca , Jeremie Postel-Pellerin , Damien Deleruyelle
IEEE International Memory Workshop (IMW 2018), May 2018, Kyoto, Japan. ⟨10.1109/IMW.2018.8388839⟩
Communication dans un congrès hal-01900758v1

Conductive Bridge Random Access Memory devices with Ecofriendly Solid Polymer Electrolyte for flexible electronics applications

Prabir Mahato , Etienne Puyoo , Sébastien Pruvost , Damien Deleruyelle
11th International Symposium on Organic Flexible Electronics (ISFOE), Jul 2018, Thessaloniki, Greece
Communication dans un congrès hal-03029545v1

Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL

P.-V. Guenery , E. Leon Perez , K. Ayadi , J. Moeyaert , S. Labau
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩
Communication dans un congrès hal-02330674v1

Conductive Bridge Random Access Memory Devices Based on an Ecofriendly Solid Polymer Electrolyte

Prabir Mahato , Etienne Puyoo , Sébastien Pruvost , D. Deleruyelle
8th Advanced Functional Materials and Devices, Aug 2018, Leuven, Belgium
Communication dans un congrès hal-03029542v1
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Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity

A. Krakovinsky , Marc Bocquet , R. Wacquez , J. Coignus , D. Deleruyelle
2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156
Communication dans un congrès hal-01435097v1
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

G. Piccolboni , G. Molas , M. Portal , R. Coquand , Marc Bocquet
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Communication dans un congrès hal-01804658v1

Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte

Charles Rebora , Marc Bocquet , T. Ouled-Khachroum , Magali Putero , Damien Deleruyelle
2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩
Communication dans un congrès hal-01804660v1
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Analytical study of complementary memristive synchronous logic gates

Jean-Michel Portal , Mathieu Moreau , Marc Bocquet , Hassen Aziza , Damien Deleruyelle
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. ⟨10.1109/NanoArch.2013.6623047⟩
Communication dans un congrès hal-01745759v1
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Analytical study of complementary memristive synchronous logic gates

Jean-Michel Portal , M. Moreau , Marc Bocquet , Hassen Aziza , D. Deleruyelle
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, France. ⟨10.1109/NanoArch.2013.6623047⟩
Communication dans un congrès hal-01827052v1
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Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells

Y Zhang , Erya y Deng , Jacques-Olivier O Klein , Damien Querlioz , Dafiné Ravelosona
11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. ⟨10.1109/NEWCAS.2013.6573578⟩
Communication dans un congrès hal-01840795v1
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Crossbar architecture based on 2R complementary resistive switching memory cell

Weisheng Zhao , Y Zhang , Jacques-Olivier Klein , Damien S Querlioz , Dafine Ravelosona
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩
Communication dans un congrès hal-01745351v1
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Design challenges for prototypical and emerging memory concepts relying on resistance switching

Christophe Muller , D. Deleruyelle , O. Ginez , Jean-Michel Portal , Marc Bocquet
2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. ⟨10.1109/CICC.2011.6055316⟩
Communication dans un congrès hal-01745644v1
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On the electrical variability of resistive-switching memory devices based on NiO oxide

S Tirano , Marc Bocquet , Christophe Muller , D. Deleruyelle , L. Perniola
2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States
Communication dans un congrès hal-01745633v1

Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer

L. Courtade , C. Turquat , J.G. Lisoni , L. Goux , D.J. Wouters
ESSDERC 2008 - 38th European Solid-State Device Research Conference, Sep 2008, Edinburgh, United Kingdom. pp.218-221
Communication dans un congrès hal-02271988v1

Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystals

D. Deleruyelle , D. Fraboulet , B. de Salvo , N. Buffet , D. Mariolle
Silicon Nano-electronics Workshop 2002, 2002, Honolulu, United States
Communication dans un congrès hal-00484534v1

A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals

D. Deleruyelle , C. Leroyer , B. de Salvo , G. Lecarval , M. Gely
Silicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404
Communication dans un congrès hal-00485182v1

Emerging Memory Concepts

Christophe Muller , Damien Deleruyelle , Olivier Ginez
Design Technology for Heterogeneous Embedded Systems, Springer Netherlands, pp.339-364, 2012, ⟨10.1007/978-94-007-1125-9_16⟩
Chapitre d'ouvrage hal-03505264v1

A single Nano-Dot Embedded in a Plate Capacitor

Damien Deleruyelle , Gilles Micolau
Sattler, Klaus D. Handbook of Nanophysics - Nanoelectronics and Nanophotonics, CRC Press, 2010, 978-1-4200-7550-2
Chapitre d'ouvrage hal-03505265v1