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[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors
E. Frayssinet
,
L. Nguyen
,
Marie Lesecq
,
N. Defrance
,
R. Comyn
,
et al.
13th International Conference on Nitride Semiconductors (ICNS 2019), Jul 2019, Washington, Seattle, United States
Communication dans un congrès
hal-04039430v1
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Amélioration des performances des HEMTs AlGaN/GaN sur substrat Si
A. Minko
,
Virginie Hoel
,
Christophe Gaquière
,
D. Theron
,
Jean-Claude de Jaeger
,
et al.
GDR Grand Gap, 2004, Fréjus, France
Communication dans un congrès
hal-00141966v1
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AlGaN/GaN HEMTs on a (001)-oriented silicon substrate based on 100-nm SiN recessed gate technology for microwave power amplification
S. Boulay
,
S. Touati
,
A. Sar
,
Virginie Hoel
,
Christophe Gaquière
,
et al.
Article dans une revue
hal-00283493v1
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[Invité] Micro et nanorésonateurs électromécaniques radio-fréquences. Principes et applications
Marc Faucher
,
Bernard Legrand
,
Benjamin Walter
,
Emmanuelle Algre
,
A. Ben-Amar
,
et al.
TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, papier 554, 1-6
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hal-00806730v1
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Conception et réalisation de transistors de type FP-HEMT AlGaN/GaN
J.C. Gerbedoen
,
A. Soltani
,
Michel Rousseau
,
N. Defrance
,
Y. Cordier
,
et al.
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D10-1-4
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hal-00370331v1
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Les hétérostructures AlInAs/GaInAs/GaAs métamorphiques : étude de la relaxation
J.M. Chauveau
,
I. Androussi
,
D. Ferre
,
J. Dipersio
,
Y. Cordier
7èmes Journées de la Matière Condensée, 2000, Poitiers, France
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hal-00158438v1
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Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate
M. Mattalah
,
A. Soltani
,
J.C. Gerbedoen
,
A. Ahaitouf
,
N. Defrance
,
et al.
Article dans une revue
istex
hal-00790433v1
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Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs
F. Lecourt
,
N. Defrance
,
S. Rennesson
,
Virginie Hoel
,
Y. Cordier
,
et al.
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2
Communication dans un congrès
hal-00801154v1
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Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology
M. Ardouin
,
B. Bonte
,
M. Zaknoune
,
Y. Cordier
,
S. Bollaert
,
et al.
25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia
Communication dans un congrès
hal-00149713v1
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Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate
Tasnia Hossain
,
Mohammad Junaebur Rashid
,
Eric Frayssinet
,
Nicolas Baron
,
Benjamin Damilano
,
et al.
Article dans une revue
hal-01871066v1
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Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy
Micka Bah
,
Damien Valente
,
Marie Lesecq
,
N. Defrance
,
Maxime Garcia Barros
,
et al.
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
Communication dans un congrès
hal-03284079v1
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Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement
Jean-Claude Jacquet
,
Raphaël Aubry
,
H. Gerard
,
E. Delos
,
Nathalie Rolland
,
et al.
12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238
Communication dans un congrès
hal-00142308v1
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Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate
Philippe Altuntas
,
François Lecourt
,
Adrien Cutivet
,
N. Defrance
,
Etienne Okada
,
et al.
Article dans une revue
hal-03276913v1
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A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate
Guillaume Gomme
,
Gaël Gautier
,
Marc Portail
,
Eric Frayssinet
,
Daniel Alquier
,
et al.
Article dans une revue
hal-02152388v1
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Pressure characterization of AlGaN/GaN Hall sensors
Leszek Konczewicz
,
Sylvie Contreras
,
L. Bouguen
,
Benoit Jouault
,
Jean Camassel
,
et al.
13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil
Communication dans un congrès
hal-00401344v1
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Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
A. Michon
,
E. Roudon
,
M. Portail
,
Benoit Jouault
,
S. Contreras
,
et al.
Communication dans un congrès
hal-03037521v1
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films
R. Aristegui
,
P. Lefebvre
,
C. Brimont
,
T. Guillet
,
M. Vladimirova
,
et al.
Article dans une revue
hal-04251300v1
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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate
Marie Lesecq
,
Y. Fouzi
,
A. Abboud
,
N. Defrance
,
Francois Vaurette
,
et al.
European Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland
Communication dans un congrès
hal-04039596v1
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A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations
Roy Dagher
,
Elisabeth Blanquet
,
Christian Chatillon
,
Timotée Journot
,
Marc Portail
,
et al.
Article dans une revue
hal-01871982v1
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Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS
Rémi Comyn
,
Yvon Cordier
,
Sébastien Chenot
,
Abdelatif Jaouad
,
Hassan Maher
,
et al.
Article dans une revue
istex
hal-01918142v1
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Role of magnetic polarons in ferromagnetic GdN
F. Natali
,
B.J. Ruch
,
H. J. Trodahl
,
Do Le Binh
,
S. Vézian
,
et al.
Article dans une revue
hal-01002353v1
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Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C
Laure Bouguen
,
Sylvie Contreras
,
Benoit Jouault
,
Leszek Konczewicz
,
Jean Camassel
,
et al.
Article dans une revue
hal-00535633v1
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Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off
Daniel Rouly
,
Josiane Tasselli
,
Patrick Austin
,
Yvon Cordier
,
Aimeric Courville
,
et al.
Symposium de génie électrique SGE 2023, Université de Lille, Jul 2023, Lille, France
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hal-04127127v1
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Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates
Idriss Abid
,
Riad Kabouche
,
Malek Zegaoui
,
C. Bougerol
,
Rémi Comyn
,
et al.
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States
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hal-03287398v1
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Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate
Reda Elwaradi
,
Jash Mehta
,
Thi Huong Ngo
,
Maud Nemoz
,
Catherine Bougerol
,
et al.
Article dans une revue
hal-04086494v1
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Regrowth of GaN quantum wells on GaN substrates for TeraHertz generation by amplification of transverse electromagnetic waves
M. Chmielowska
,
S. Chenot
,
Y. Cordier
,
T. Laurent
,
P. Nouvel
,
et al.
18th European Heterostructure Technology Workshop – HETECH, 2009, Günzburg / Ulm, Germany
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hal-02455804v1
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MicroRaman analysis of resistance ohmic contact to n-AlGaN/GaN
A. Soltani
,
S. Touati
,
Virginie Hoel
,
Jean-Claude de Jaeger
,
J. Laureyns
,
et al.
Proceedings of the 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Diamond 2005, 2005, Toulouse, France
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hal-00131350v1
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MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances
Y. Cordier
,
F. Semond
,
P. Lorenzini
,
N. Grandjean
,
F. Natali
,
et al.
Journal of Crystal Growth, 2003, 251, pp.811-815
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hal-00146661v1
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Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement
Mustafa Boudrissa
,
Elisabet Delos
,
Christophe Gaquière
,
Michel Rousseau
,
Yvon Cordier
,
et al.
Article dans une revue
hal-00152595v1
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Bias dependence of gallium nitride micro-electro-mechanical systems actuation using a two-dimensional electron gas
A. Ben Amar
,
M. Faucher
,
B. Grimbert
,
Y. Cordier
,
M. François
,
et al.
Article dans une revue
hal-00787414v1
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