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[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors

 E. Frayssinet , L. Nguyen , Marie Lesecq , N. Defrance , R. Comyn , et al.
13th International Conference on Nitride Semiconductors (ICNS 2019), Jul 2019, Washington, Seattle, United States
Communication dans un congrès hal-04039430v1

Amélioration des performances des HEMTs AlGaN/GaN sur substrat Si

 A. Minko , Virginie Hoel , Christophe Gaquière , D. Theron , Jean-Claude de Jaeger , et al.
GDR Grand Gap, 2004, Fréjus, France
Communication dans un congrès hal-00141966v1

AlGaN/GaN HEMTs on a (001)-oriented silicon substrate based on 100-nm SiN recessed gate technology for microwave power amplification

 S. Boulay , S. Touati , A. Sar , Virginie Hoel , Christophe Gaquière , et al.
IEEE Transactions on Electron Devices, 2007, 54, pp.2843-2848. ⟨10.1109/TED.2007.907189⟩
Article dans une revue hal-00283493v1

[Invité] Micro et nanorésonateurs électromécaniques radio-fréquences. Principes et applications

 Marc Faucher , Bernard Legrand , Benjamin Walter , Emmanuelle Algre , A. Ben-Amar , et al.
TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, papier 554, 1-6
Communication dans un congrès hal-00806730v1

Conception et réalisation de transistors de type FP-HEMT AlGaN/GaN

 J.C. Gerbedoen , A. Soltani , Michel Rousseau , N. Defrance , Y. Cordier , et al.
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D10-1-4
Communication dans un congrès hal-00370331v1

Les hétérostructures AlInAs/GaInAs/GaAs métamorphiques : étude de la relaxation

 J.M. Chauveau , I. Androussi , D. Ferre , J. Dipersio , Y. Cordier
7èmes Journées de la Matière Condensée, 2000, Poitiers, France
Communication dans un congrès hal-00158438v1

Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

 M. Mattalah , A. Soltani , J.C. Gerbedoen , A. Ahaitouf , N. Defrance , et al.
physica status solidi (c), 2012, 9, pp.1083-1087. ⟨10.1002/pssc.201100211⟩
Article dans une revue istex hal-00790433v1

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

 F. Lecourt , N. Defrance , S. Rennesson , Virginie Hoel , Y. Cordier , et al.
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2
Communication dans un congrès hal-00801154v1

Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology

 M. Ardouin , B. Bonte , M. Zaknoune , Y. Cordier , S. Bollaert , et al.
25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia
Communication dans un congrès hal-00149713v1

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

 Tasnia Hossain , Mohammad Junaebur Rashid , Eric Frayssinet , Nicolas Baron , Benjamin Damilano , et al.
physica status solidi (b), 2018, 255 (5), pp.1700399. ⟨10.1002/pssb.201700399⟩
Article dans une revue hal-01871066v1
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Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

 Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros , et al.
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
Communication dans un congrès hal-03284079v1

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

 Jean-Claude Jacquet , Raphaël Aubry , H. Gerard , E. Delos , Nathalie Rolland , et al.
12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238
Communication dans un congrès hal-00142308v1

Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate

 Philippe Altuntas , François Lecourt , Adrien Cutivet , N. Defrance , Etienne Okada , et al.
IEEE Electron Device Letters, 2015, 36 (4), pp.303-305. ⟨10.1109/LED.2015.2404358⟩
Article dans une revue hal-03276913v1

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

 Guillaume Gomme , Gaël Gautier , Marc Portail , Eric Frayssinet , Daniel Alquier , et al.
physica status solidi (a), 2017, 214 (4), pp.1600450. ⟨10.1002/pssa.201600450⟩
Article dans une revue hal-02152388v1

Pressure characterization of AlGaN/GaN Hall sensors

 Leszek Konczewicz , Sylvie Contreras , L. Bouguen , Benoit Jouault , Jean Camassel , et al.
13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil
Communication dans un congrès hal-00401344v1

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

 A. Michon , E. Roudon , M. Portail , Benoit Jouault , S. Contreras , et al.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩
Communication dans un congrès hal-03037521v1
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

 R. Aristegui , P. Lefebvre , C. Brimont , T. Guillet , M. Vladimirova , et al.
Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩
Article dans une revue hal-04251300v1

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

 Marie Lesecq , Y. Fouzi , A. Abboud , N. Defrance , Francois Vaurette , et al.
European Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland
Communication dans un congrès hal-04039596v1

A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

 Roy Dagher , Elisabeth Blanquet , Christian Chatillon , Timotée Journot , Marc Portail , et al.
CrystEngComm, 2018, 20 (26), pp.3702 - 3710. ⟨10.1039/c8ce00383a⟩
Article dans une revue hal-01871982v1

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

 Rémi Comyn , Yvon Cordier , Sébastien Chenot , Abdelatif Jaouad , Hassan Maher , et al.
physica status solidi (a), 2016, 213 (4), pp.917 - 924. ⟨10.1002/pssa.201532732⟩
Article dans une revue istex hal-01918142v1

Role of magnetic polarons in ferromagnetic GdN

 F. Natali , B.J. Ruch , H. J. Trodahl , Do Le Binh , S. Vézian , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87 (3), pp.035202. ⟨10.1103/PhysRevB.87.035202⟩
Article dans une revue hal-01002353v1

Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C

 Laure Bouguen , Sylvie Contreras , Benoit Jouault , Leszek Konczewicz , Jean Camassel , et al.
Applied Physics Letters, 2008, 92, pp.043504. ⟨10.1063/1.2838301⟩
Article dans une revue hal-00535633v1
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Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off

 Daniel Rouly , Josiane Tasselli , Patrick Austin , Yvon Cordier , Aimeric Courville , et al.
Symposium de génie électrique SGE 2023, Université de Lille, Jul 2023, Lille, France
Communication dans un congrès hal-04127127v1

Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates

 Idriss Abid , Riad Kabouche , Malek Zegaoui , C. Bougerol , Rémi Comyn , et al.
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States
Communication dans un congrès hal-03287398v1
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Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate

 Reda Elwaradi , Jash Mehta , Thi Huong Ngo , Maud Nemoz , Catherine Bougerol , et al.
Journal of Applied Physics, 2023, 133 (14), pp.145705. ⟨10.1063/5.0147048⟩
Article dans une revue hal-04086494v1

Regrowth of GaN quantum wells on GaN substrates for TeraHertz generation by amplification of transverse electromagnetic waves

 M. Chmielowska , S. Chenot , Y. Cordier , T. Laurent , P. Nouvel , et al.
18th European Heterostructure Technology Workshop – HETECH, 2009, Günzburg / Ulm, Germany
Communication dans un congrès hal-02455804v1

MicroRaman analysis of resistance ohmic contact to n-AlGaN/GaN

 A. Soltani , S. Touati , Virginie Hoel , Jean-Claude de Jaeger , J. Laureyns , et al.
Proceedings of the 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Diamond 2005, 2005, Toulouse, France
Communication dans un congrès hal-00131350v1

MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances

 Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali , et al.
Journal of Crystal Growth, 2003, 251, pp.811-815
Article dans une revue hal-00146661v1

Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement

 Mustafa Boudrissa , Elisabet Delos , Christophe Gaquière , Michel Rousseau , Yvon Cordier , et al.
IEEE Transactions on Electron Devices, 2001, 48 (6), pp.1037-1044. ⟨10.1109/16.925223⟩
Article dans une revue hal-00152595v1

Bias dependence of gallium nitride micro-electro-mechanical systems actuation using a two-dimensional electron gas

 A. Ben Amar , M. Faucher , B. Grimbert , Y. Cordier , M. François , et al.
Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5, pp.067201-1-3. ⟨10.1143/APEX.5.067201⟩
Article dans une revue hal-00787414v1
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