Yvan Cuminal
91
Documents
Publications
Analysis of thermally stressed GaAs solar cells for operation in terrestrial hybrid systems18th International Conference on Concentrator Photovoltaic Systems (CPV-18), Apr 2022, Miyazaki & online (hybrid), Japan
Communication dans un congrès
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Modélisation de cellules solaires multijonctions III-Sb réalistesJournées Nationales du Photovoltaïque, Nov 2022, Dourdan, France
Communication dans un congrès
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Insight into the factors affecting the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2021, Nov 2021, Dourdan, France
Communication dans un congrès
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Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France
Communication dans un congrès
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Characterization and numerical analysis of III-Sb tandem solar cellsJournées Nationales du Photovoltaïque, Dec 2019, Dourdan, France
Communication dans un congrès
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Indoor energy micro-sources for energetically antonomous nomadic devices36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France
Communication dans un congrès
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Sources d'énergies indoor pour objets communicants énergétiquement autonomesJournées Nationales du Photovoltaïque, Dec 2019, Dourdan, France
Communication dans un congrès
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Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cellsForum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy
Communication dans un congrès
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Etude d’une méthode de caractérisation thermique de couches minces par technique opto-électro-thermique sur données synthétiquesCongrès annuel de la Société Française de Thermique (SFT), May 2018, Pau, France
Communication dans un congrès
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Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cellsJournées Nationales du Photovoltaïque, Dec 2018, Dourdan, France
Communication dans un congrès
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Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942
Communication dans un congrès
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Développement et optimisation d'une méthode de caractérisation thermique de couches minces par technique électrothermique sur données synthétiquesCongrès annuel de la Société Française de Thermique (SFT), May 2017, Marseille, France
Communication dans un congrès
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Interest of Antimonide Compounds Based Multijunction Cells for High Concentrating Photovoltaics20th Sede Boqer Symposium on Solar Electricity Production, Sep 2016, Sede Boqer, Israel
Communication dans un congrès
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Impact de la résistance série sous forte concentration solaire dans le cas de cellules antimoniuresJournées Nationales du PhotoVoltaïque, Dec 2016, Dourdan, France
Communication dans un congrès
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Contacts ohmiques pour cellules solaires à base de matériaux antimoniures dans le cadre d'applications aux fortes concentrations solairesJournées Nationales sur l'Energie Solaire, Jun 2016, Perpignan, France
Communication dans un congrès
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Solar cells based on GaAs: Thermal behavior study11TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS: CPV-11, 2016, Aix-les-Bains, France. pp.020002, ⟨10.1063/1.4931502⟩
Communication dans un congrès
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Multi-junctions PV concentrator solar cells, state of the art. Interest of antimonide compoundsEMRS Spring meeting, 2015, Lille, France
Communication dans un congrès
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Structures à base de matériaux antimoniures pour la conversion de l’énergie solaire concentrée4ème JNPV, 2014, Dourdan, France
Communication dans un congrès
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Plasma Texturing for Solar Cell: Study on Hybrid Mono-Like and on Traditional Multicrystalline Wafers28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, Paris, France
Communication dans un congrès
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Homogeneous High Ohmic Phosphorus Doping for Advanced Solar Cell Manufacturing Using Reduced Pressure Diffusion Techniques28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, Montpellier, France
Communication dans un congrès
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Improvement of Performance of Crystalline Silicon Solar Cells by the Use of Dry Polishing28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, Paris, France. ⟨10.4229/28thEUPVSEC2013-2DV.3.9⟩
Communication dans un congrès
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Efficiency limit of AlGaAs solar cell modified by AlGaSb quantum dot intermediate band embedded outside the depletion region24th EUPVSEC, 2012, Frankfurt, Germany
Communication dans un congrès
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CHARACTERIZATION OF GaSb SOLAR CELLS STRUCTURES UNDER HIGH SOLAR CONCENTRATIONSProceedings of International Conference Nanomeeting – 2011, 2011, Minsk, Belarus. ⟨10.1142/9789814343909_0135⟩
Communication dans un congrès
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Deep Levels induced by a negative bias stress applied on commercial VDMOSFET transistorAbstracts of the Materials Research Society spring meeting (MRS), 2011, San Francisco, United States
Communication dans un congrès
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Modelling of the boron diffusion from BCl3 process: Application for N-type crystalline silicon solar cellsCIMA, Beyrouth, 2011, Beyrouth, Lebanon
Communication dans un congrès
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GaSb solar cells structures under high solar concentrationInternational Conference Nanomeeting 2011, 2011, Minsk, Belarus
Communication dans un congrès
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Numerical Model of Transport in Microcrystalline Silicon FilmsInternational Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24), 2011, Tokyo, Japan
Communication dans un congrès
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Process description approach for n-type multicrystalline silicon solar cells fabrication26th European Photovoltaic Solar Energy Conference, 2010, Valencia, Spain
Communication dans un congrès
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GaSb based solar cells designed for high solar concentrationThin films 2010 International Conference, 2010, Aix en Provence, France
Communication dans un congrès
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Optical gain calculation of dilute Nitride InAsN/GaSb laser diodes operating in the mid-infraredEMRS Int. Conference, 2009, Strasbourg, France
Communication dans un congrès
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New chemical etching procedures of antimonide-based materials for infrared detectors2d International Meeting on Materials for Electronic Applications, 2009, Hammamet, Tunisia
Communication dans un congrès
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THEORETICAL COMPARISON OF DILUTE-NITRIDE "W" AND "M" InAsN / GaSb MID-INFRARED LASER DIODESProceedings of the International Conference on Nanomeeting 2009, May 2009, Minsk, Belarus. ⟨10.1142/9789814280365_0141⟩
Communication dans un congrès
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VSpectral characteristics of the photosensitive and light emitting short-period superlattices in the InAs-GaSb systemWorkshop “Frontiers of nanoscale spintronics and photovoltaic", 2009, Marseille, France
Communication dans un congrès
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Effect of pressure on electrical properties of short period InAs/GaSb superlattice13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647
Communication dans un congrès
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Surface treatments of Sb-based photodetectorsMADICA 2008, 2008, Rabat, Morocco
Communication dans un congrès
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Dilute-Nitride "W" and "M" InAsN/GaSb laser diodes for gaz analysis in the mid-infrared domainMADICA 2008, 2008, Rabat, Morocco
Communication dans un congrès
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Improvement performances of InAs/GaSb superlattice photodiodeEXMATEC'08, 2008, Lodz, Poland
Communication dans un congrès
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Improvement material performances of InAs/GaSb superlattice photodiodesEXMATEC, Jun 2008, Łódź, Poland
Communication dans un congrès
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Surface passivation of GaInAsSb photodiode with thioacetamideWILEY-VCH Verlag GmbH & Co. KGaA, Jan 2007, Wenheim, France. 4 p
Communication dans un congrès
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Photodétecteurs infrarouges non redroidis à superréseaux InAs/GaSb : modélisation et caractérisation optique.11eme Journées Nano-Micro Electronique et Optoélectronique, Apr 2006, Aussois, France
Communication dans un congrès
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Nitride-based quantum-well lasers on InAs substrate for midwave-infrared emission.14th International Symposium on Nanostructures: Physics and Technology, NANO 2006, 2006, Saint-Petersbourg, Russia. pp.338-339
Communication dans un congrès
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Electrical and optical properties of InAs/InSb/GaSb superlattices for mid-infrared applications.14th International Symposium nanostrucutres : Physics and Technology., Jun 2006, St Petersbourg., Russia
Communication dans un congrès
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Multiphysic FEMLAB modelling to evaluate mid-infrared photonic detector performancesNov 2005, pp.109-112
Communication dans un congrès
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Edge and surface emitting mid-infrared quantum well lasers for gas analysisMid-Infrared Optoelectronics and Devices, 1998, Prague, Czech Republic
Communication dans un congrès
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Mid-infrared GaSb-InAs-based multiple quantum well lasersOptoelectronics and High-Power Lasers & Applications, 1998, San Jose, United States. ⟨10.1117/12.304451⟩
Communication dans un congrès
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GaInAsSb/GaSb multiple quantum well lasers for tunable diode laser spectroscopy between 2 and 2.65 µm2nd International Conference on Tunable Diode Laser Spectroscopy (TDLS), 1998, Moscow, Russia
Communication dans un congrès
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Room Temperature Mid-Infrared Quantum Well Lasers for Gas AnalysisMaterials Research Society Fall Meeting (MRS), 1998, Boston, United States
Communication dans un congrès
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Improvement of Sb-based multiquantum well lasers by Coulomb enhancementSemiconductor and Integrated Optoelectronics Conference (SIOE), 1998, Cardiff, United Kingdom. pp.3 - 8, ⟨10.1049/ip-opt:19990456⟩
Communication dans un congrès
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The importance of the induced electrostatic confinement in the design of type II mid-infrared lasersSemiconductor and Integrated Opto-electronics conference (SIOE), 1998, Cardiff, United Kingdom
Communication dans un congrès
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Low-threshold continuous-wave operation of 2.38 µm GaInAsSb/GaSb type-II quantum-well laser diodesIEEE 16th International Semiconductor Laser Conference (ISLC), 1998, Nara, Japan
Communication dans un congrès
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Novel Sb-based mid-infrared laser structures designed by wave function engineeringMid-Infrared Optoelectronics and Devices, 1998, Prague, Czech Republic
Communication dans un congrès
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Gas analysis using diode lasers near 2.35 µmMiddle Infrared (2-15 µm) Coherent Sources (MICS), 1998, Cargese, France
Communication dans un congrès
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Edge and Surface Emitting Sb-based Mid-Infrared Type II Quantum Well lasersXth International MBE Congress, 1998, Cannes, France
Communication dans un congrès
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Room temperature GaInAsSb/GaSb Quantum Well Laser for Tunable Diode Laser Absorption Spectroscopy around 2.35 µmMid-Infrared Optoelectronics and Devices, 1998, Prague, Czech Republic
Communication dans un congrès
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Fabrication, characterization and modeling of III-Sb based multijunction solar cellsLes Houches School of Physics - Physics of solar cells: from basic principles to material science, Apr 2022, Les Houches, France
Poster de conférence
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Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSbJournées Nationales du Photovoltaïque, Nov 2021, Dourdan, France
Poster de conférence
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Analysis of the performances of a conventional GaAs solar cell operating at up to 200 °CJournées Nationales du Photovoltaïque 2020, Jan 2021, En ligne, France
Poster de conférence
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Physics of GaAs solar cells operating under thermal stressLes Houches School of Physics - Physics of Solar Cells: from basic principles to advanced characterization, Mar 2020, Les Houches, France
Poster de conférence
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Multiple-junction photovoltaic cell based on antimonide materialsUnited States, Patent n° : US Patent App. 15/312,570, 2017. 2017
Brevet
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