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Isolation mésa par gravures humide et sèche des HEMTs AlSb/InAs sur substrat InP

 A. Olivier , T. Gehin , L. Desplanque , X. Wallart , J. Cheng , et al.
11èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2008, 2008, Bordeaux, France
Communication dans un congrès hal-00361522v1

Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

 Jean-Sebastien Galloo , Emmanuelle Pichonat , Yannick Roelens , S. Bollaert , X. Wallart , et al.
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩
Communication dans un congrès hal-00133896v1

Ballistic nanodevices for high frequency applications

 C. Gardes , Yannick Roelens , S. Bollaert , J.S. Galloo , X. Wallart , et al.
International Journal of Nanotechnology, 2008, 5, 796-808, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018698⟩
Article dans une revue hal-00356665v1

Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics

 Yannick Roelens , A. Olivier , L. Desplanque , A. Noudeviwa , Francois Danneville , et al.
68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩
Communication dans un congrès hal-00549924v1

100mV noise performances of Te-doped Sb-HEMT

 A. Noudeviwa , A. Olivier , Yannick Roelens , Francois Danneville , Nicolas Wichmann , et al.
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩
Communication dans un congrès hal-00549922v1

InAlAs/InGaAa HEMTs on polyimide flexible substrate with high cut-off frequencies

 J.S. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
Journées Nationales Technologies Emergentes en Micro-Nanofabrication, JNTE 2013, 2013, Evian, France
Communication dans un congrès hal-00813609v1
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Voltage tunable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor

 J. Lusakowski , W. Knap , N. Dyakonova , L. Varani , J. Mateos , et al.
Journal of Applied Physics, 2005, 97, pp.64307-1-7
Article dans une revue hal-00125162v1

THz emission induced by sub-threshold instability optical excited in nanometer-length field-effect transistors

 P. Nouvel , J. Torres , H. Marinchio , A. Penot , C. Palermo , et al.
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
Communication dans un congrès hal-00799965v1

Room-temperature terahertz emission from nanometer field-effect transistors

 N. Dyakonova , A.E. Fatimy , J. Lusakowski , W. Knap , M.I. Dyakonov , et al.
Applied Physics Letters, 2006, 88, pp.141906-1-3
Article dans une revue hal-00126524v1

Room-temperature terahertz emission from nanometer field-effect transistors

 N. Dyakonova , A. El Fatimy , J. Łusakowski , W. Knap , M.I. Dyakonov , et al.
Applied Physics Letters, 2006, 88, pp.141906-1-3
Article dans une revue hal-00127944v1

GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

 Giuseppe Di Gioia , Mohammed Samnouni , Vinay Kumar Chinni , Priyanka Mondal , Jeanne Treuttel , et al.
Superlattices and Microstructures, 2022, 164, pp.107116. ⟨10.1016/j.spmi.2021.107116⟩
Article dans une revue hal-03542163v1

Effects of substrate preparation on properties of YBaCuO thin films

 A. Dégardin , X. Castel , M. Achani , Maryline Guilloux-Viry , E. Caristan , et al.
2000, pp.1993-1994
Communication dans un congrès hal-00157906v1

RF Performances and De-Embedding Techniques of Passive Devices in 3D Homogeneous Integration at Sub-THz

 A. Oliveira , O. Valorge , C. Dubarry , Y. Roelens , M. Zaknoune , et al.
2023 53rd European Microwave Conference (EuMC), Sep 2023, Berlin, Germany. pp.616-619, ⟨10.23919/EuMC58039.2023.10290293⟩
Communication dans un congrès hal-04370209v1
Image document

Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

 I. Iniguez de La Torre , T. Gonzalez , D. Pardo , C. Gardes , Yannick Roelens , et al.
Journal of Applied Physics, 2009, 105 (9), pp.094504. ⟨10.1063/1.3124363⟩
Article dans une revue hal-00471809v1

Terahertz emission and noise spectra in HEMTs

 J. Mateos , S. Perez , D. Pardo , T. Gonzalez , J. Lusakowski , et al.
Terahertz emission and noise spectra in HEMTs, L. Reggiani, 2005, Lecce, Italy. pp.423-430, ⟨10.1063/1.2138647⟩
Communication dans un congrès hal-00154897v1

Nanoscaled double Y-Branch junction operating as room temperature RF to DC rectifier

 Lukasz Bednarz , R. Rashmi , Benoit Hackens , Hervé Boutry , Vincent Bayot , et al.
4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.284-286, ⟨10.1109/NANO.2004.1392326⟩
Communication dans un congrès hal-00133899v1

Frequency response of T-shaped three branch junctions as mixers and detectors

 I. Iniguez de La Torre , T. Gonzalez , D. Pardo , C. Gardes , Yannick Roelens , et al.
7th Spanish Conference on Electron Devices, CDE 09, 2009, Spain. pp.168-171, ⟨10.1109/SCED.2009.4800457⟩
Communication dans un congrès hal-00474095v1

Ballistic GaInAs/AlInAs devices technology and characterization at room temperature

 J.S. Galloo , Yannick Roelens , S. Bollaert , Emmanuelle Pichonat , X. Wallart , et al.
4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.98-100, ⟨10.1109/NANO.2004.1392262⟩
Communication dans un congrès hal-00133881v1

InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

 Ndèye Arame Thiam , Yannick Roelens , Christophe Coinon , Vanessa Avramovic , Brice Grandchamp , et al.
IEEE Electron Device Letters, 2014, 35 (10), pp.1010-1012. ⟨10.1109/LED.2014.2347256⟩
Article dans une revue hal-01090844v1

Sb-HEMT : toward 100-mV cryogenics electronics

 A. Noudewiva , Yannick Roelens , Francois Danneville , A. Olivier , Nicolas Wichmann , et al.
IEEE Transactions on Electron Devices, 2010, 57, pp.1903-1909. ⟨10.1109/TED.2010.2050109⟩
Article dans une revue hal-00548570v1

Low-IQ : MMIC ultra faible consommation cryogénique et ambiant pour télécommunications spatiales en bande Q

 S. Bollaert , Francois Danneville , Yannick Roelens , L. Desplanque , Cyrille Gardes , et al.
Les Rencontres du Numérique, 2013, Paris, France
Communication dans un congrès hal-00974542v1

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

 Mohammed Zaknoune , Etienne Okada , Estelle Mairiaux , Yannick Roelens , Damien Ducatteau , et al.
IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩
Article dans une revue hal-00955679v1
Image document

Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and Astrophysics

 P. Mondal , G. D. Gioia , H. Bouillaud , Yannick Roelens , T. Vacelet , et al.
Nano, Meso, Micro: Science and Innovation for Radio and Photonic, URSI JS22, Mar 2022, Palaiseau, France. pp.87-96
Communication dans un congrès hal-03835088v1

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

 N. Dyakonova , Michel Dyakonov , A. El Fatimy , J. Lusakowski , W. Knap , et al.
Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩
Article dans une revue hal-00264792v1

Plasma wave detection of sub-terahertz radiation : towards the Dyakonov-Shur instability

 S. Boubanga-Tombet , F. Teppe , D. Coquillat , S. Nadar , N. Dyakonova , et al.
EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM
Communication dans un congrès hal-00360411v1

Plasma wave HEMTs for THz applications

 A. Shchepetov , Yannick Roelens , S. Bollaert , A. Cappy , N. Dyakonova , et al.
Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.136, ⟨10.1109/ICIMW.2006.368344⟩
Communication dans un congrès hal-00241319v1

Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

 Nicolas Wichmann , B.G. Vasallo , S. Bollaert , Yannick Roelens , X. Wallart , et al.
Applied Physics Letters, 2009, 94, pp.103504-1-3. ⟨10.1063/1.3095482⟩
Article dans une revue hal-00469682v1

Nanotransistors pour émission THz

 S. Bollaert , Yannick Roelens , A. Shchepetov , X. Wallart , A. Cappy , et al.
3èmes Journées THz, 2005, Aussois, France
Communication dans un congrès hal-00125897v1

Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot

 Yannick Roelens , Benoit Hackens , Sébastien Faniel , Cédric Gustin , Hervé Boutry , et al.
International Conference on Superlattices Nano-structures and Nano-devices, ICSNN-02, Jul 2002, Toulouse, France
Communication dans un congrès hal-00147857v1

HEMTs AlSb/InAs pour applications ultra faible consommation

 S. Bollaert , A. Olivier , Yannick Roelens , N. Wichmannn , A. Shchepetov , et al.
12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, 2008, St Pierre d'Oléron, France
Communication dans un congrès hal-00361523v1
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