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Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories

 V. Della Marca , J. Postel-Pellerin , G. Just , P. Canet , J.-L. Ogier
Microelectronics Reliability, 2014, 54 (9-10), pp.2262 - 2265. ⟨10.1016/j.microrel.2014.07.063⟩
Article dans une revue hal-01760459v1
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Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

 Corentin Pigot , Marc Bocquet , Fabien Gilibert , Marina Reyboz , Olga Cueto , et al.
IEEE Transactions on Electron Devices, 2018, pp.1 - 8. ⟨10.1109/TED.2018.2862155⟩
Article dans une revue hal-01869957v1
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Experimental study to push the Flash floating gate memories toward low energy applications

 V. Della Marca , A. Regnier , J. Ogier , R. Simola , S. Niel , et al.
2011 International Semiconductor Device Research Symposium (ISDRS), Dec 2011, College Park, France. pp.73 - 77, ⟨10.1109/ISDRS.2011.6135271⟩
Communication dans un congrès hal-01760595v1

Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories

 J. Amouroux , V. Della Marca , E. Petit , D. Deleruyelle , Magali Putero , et al.
MRS Proceedings, 2011, 1337, ⟨10.1557/opl.2011.975⟩
Article dans une revue hal-01760606v1

A new non-volatile memory cell based on the flash architecture for embedded low energy applications: ATW (Asymmetrical Tunnel Window)

 J. Bartoli , V. Della Marca , J. Delalleau , A. Regnier , S. Niel , et al.
2014 International Semiconductor Conference (CAS), Oct 2014, Sinaia, France. ⟨10.1109/SMICND.2014.6966409⟩
Communication dans un congrès hal-01760564v1
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Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser

 Philippe Chiquet , Maxime Chambonneau , V. Della Marca , Jérémy Postel-Pellerin , Pierre Canet , et al.
Scientific Reports, 2019, 9 (7392), ⟨10.1038/s41598-019-43344-x⟩
Article dans une revue hal-02137915v1
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Push the flash floating gate memories toward the future low energy application

 V. Della Marca , G. Just , A. Regnier , L. Ogier , R. Simola , et al.
Solid-State Electronics, 2013, 79, pp.210 - 217. ⟨10.1016/j.sse.2012.09.001⟩
Article dans une revue hal-01760461v1
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How to improve the silicon nanocrystal memory cell performances for low power applications

 V. Della Marca , J. Amouroux , G. Molas , J. Postel-Pellerin , F. Lalande , et al.
2012 International Semiconductor Conference (CAS 2012), Oct 2012, Sinaia, Romania. ⟨10.1109/SMICND.2012.6400686⟩
Communication dans un congrès hal-01760587v1

Programming optimization for low energy NOR Flash memories

 V. Della Marca , J. Postel-Pellerin , G. Just , P. Canet , J.-L. Ogier
Non-Volatile Memory Workshop, Mar 2015, San Diego, United States
Poster de conférence hal-01760653v1

Optimization of the ATW Non-Volatile Memory for Connected Smart Objects

 Jonathan Bartoli , V. Della Marca , Jérémy Postel-Pellerin , Julien Delalleau , Arnaud Regnier , et al.
2015 IEEE International Memory Workshop (IMW), May 2015, Monterey, France. ⟨10.1109/IMW.2015.7150299⟩
Communication dans un congrès hal-01760536v1
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Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology

 Romeric Gay , Vincenzo Della Marca , Hassen Aziza , Arnaud Regnier , Stephan Niel , et al.
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), Jun 2021, Montpellier, France. pp.1-4, ⟨10.1109/DTIS53253.2021.9505093⟩
Communication dans un congrès hal-03502360v1
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Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction

 V. Della Marca , J. Postel-Pellerin , T. Kempf , A. Regnier , P. Chiquet , et al.
Microelectronics Reliability, 2018, 88-90, pp.159 - 163. ⟨10.1016/j.microrel.2018.06.116⟩
Article dans une revue hal-01900789v1
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Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

 V. Della Marca , L. Masoero , J. Postel-Pellerin , F. Lalande , J. Amouroux , et al.
IEEE International Conference on Solid Dielectrics (ICSD 2013), Jun 2013, Bologne, Italy. ⟨10.1109/ICSD.2013.6619820⟩
Communication dans un congrès hal-01760571v1

Advanced experimental setup for reliability and current consumption measurements of Flash non-volatile memories

 V. Della Marca , T. Wakrim , J. Postel-Pellerin , P. Canet
IMEKO TC4, Sep 2014, Benevento, Italy
Communication dans un congrès hal-01760548v1
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Characterization and modeling of advanced charge trapping non volatile memories

 V. Della Marca
Micro and nanotechnologies/Microelectronics. Université d'Aix-Marseille, 2013. English. ⟨NNT : ⟩
Thèse tel-01760693v1
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NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

 V. Della Marca , M. Chambonneau , S. Souiki-Figuigui , J. Postel-Pellerin , P. Canet , et al.
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016, Pasadena, United States. ⟨10.1109/IRPS.2016.7574580⟩
Communication dans un congrès hal-01418479v1

Energy consumption optimization in nonvolatile silicon nanocrystal memories

 V. Della Marca , Julien Amouroux , Julien Delalleau , Laurent Lopez , Jean-Luc Ogier , et al.
2011 International Semiconductor Conference (CAS 2011), Oct 2011, Sinaia, France. ⟨10.1109/SMICND.2011.6095810⟩
Communication dans un congrès hal-01760593v1

Simulation of the programming efficiency and the energy consumption of Flash memories during endurance degradation

 J. Postel-Pellerin , P. Chiquet , V. Della Marca
International Semiconductor Conference (CAS), 2016, Oct 2016, Sinaia, Romania. ⟨10.1109/SMICND.2016.7783052⟩
Communication dans un congrès hal-01436469v1
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Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip

 T. Kempf , V. Della Marca , L. Baron , F. Maugain , F. La Rosa , et al.
IEEE International Reliability Physics Symposium (IRPS 2018), Mar 2018, Burlingame, CA, United States. ⟨10.1109/IRPS.2018.8353642⟩
Communication dans un congrès hal-01900771v1
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Impact of CMOS Post Nitridation Annealing on Reliability of 40nm 512kB Embedded Flash Array

 Thibault Kempf , Marc Mantelli , François Maugain , Arnaud Regnier , Jean-Michel Portal , et al.
2017 IEEE International Integrated Reliability Workshop (IIRW), Oct 2017, Fallen Leaf Lake, CA, United States
Communication dans un congrès hal-01900747v1
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True random number generation exploiting SET voltage variability in resistive RAM memory arrays

 Jérémy Postel-Pellerin , Hussein Bazzi , Hassen Aziza , Pierre Canet , Mathieu Moreau , et al.
2019 19th Non-Volatile Memory Technology Symposium (NVMTS), Oct 2019, Durham, France. pp.1-5, ⟨10.1109/NVMTS47818.2019.9043369⟩
Communication dans un congrès hal-03504849v1
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TCAD investigation of zero-cost high voltage transistor architectures for logic memory circuits

 Jordan Locati , Christian Rivero , Julien Delalleau , V. Della Marca , Karine Coulié , et al.
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870384⟩
Communication dans un congrès hal-02332336v1
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A Novel Trench-Based Triple Gate Transistor With Enhanced Driving Capability

 R. Gay , V. Della Marca , Hassen Aziza , M. Mantelli , F. Trenteseaux , et al.
IEEE Electron Device Letters, 2021, 42 (6), pp.832-834. ⟨10.1109/LED.2021.3076609⟩
Article dans une revue hal-03504285v1

Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability

 Guillaume Just , V. Della Marca , Arnaud Regnier , Jean-Luc Ogier , Jérémy Postel-Pellerin , et al.
Journal of Low Power Electronics, 2012, 8 (5), pp.717 - 724. ⟨10.1166/jolpe.2012.1230⟩
Article dans une revue hal-01760474v1

A new flash architecture for embedded low energy applications: ATW (Asymmetrical Tunnel Window)

 J. Bartoli , V. Della Marca , Julien Delalleau , Arnaud Regnier , S. Niel , et al.
Non-Volatile Memory Workshop, Mar 2014, San Diego, United States
Poster de conférence hal-01760651v1
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Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM

 Nicole Yazigy , J. Postel-Pellerin , G. Di Pendina , R.C. Sousa , V. Della Marca , et al.
Microelectronics Reliability, 2023, 150, pp.115167. ⟨10.1016/j.microrel.2023.115167⟩
Article dans une revue hal-04524638v1
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Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology

 Jean-Jacques Fagot , Philippe Boivin , V. Della Marca , Jeremie Postel-Pellerin , Damien Deleruyelle , et al.
IEEE International Memory Workshop (IMW 2018), May 2018, Kyoto, Japan. ⟨10.1109/IMW.2018.8388839⟩
Communication dans un congrès hal-01900758v1
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True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

 Hassen Aziza , Jeremy Postel-Pellerin , Hussein Bazzi , Pierre Canet , Mathieu Moreau , et al.
IEEE Transactions on Nanotechnology, 2020, 19, pp.214-222. ⟨10.1109/TNANO.2020.2976735⟩
Article dans une revue hal-03504843v1

Investigation of $I-V$ Linearity in TaO x -Based RRAM Devices for Neuromorphic Applications

 Changhyuck Sung , Andrea Padovani , Bastien Beltrando , Donguk Lee , Myunghoon Kwak , et al.
IEEE Journal of the Electron Devices Society, 2019, 7, pp.404-408. ⟨10.1109/JEDS.2019.2902653⟩
Article dans une revue hal-02332457v1
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Morphology and reliability aspects of 40 nm eSTM™ architecture

 Franck Melul , V. Della Marca , Marc Bocquet , Madjid Akbal , Pierre Laine , et al.
Microelectronics Reliability, 2021, 126, pp.114266. ⟨10.1016/j.microrel.2021.114266⟩
Article dans une revue hal-03596892v1
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