Nombre de documents

6

CV de Vincent Renard


Article dans une revue6 documents

  • V. Jousseaume, J. Cuzzocrea, N. Bernier, Vincent Renard. Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature. Applied Physics Letters, American Institute of Physics, 2011, 98, pp.123103. <10.1063/1.3569142>. <hal-00558867>
  • Vincent Renard, M. Jublot, P. Gergaud, P. Cherns, D. Rouchon, et al.. Catalyst preparation for CMOS-compatible silicon nanowire synthesis. Nature Nanotechnology, Nature Publishing Group, 2009, 4, pp.654-657. <10.1038/nnano.2009.234>. <hal-00445734>
  • Vincent Renard, O. A. Tkachenko, V.A. Tkachenko, T. Ota, N. Kumada, et al.. Boundary-mediated electron-electron interactions in quantum point contacts. Physical Review Letters, American Physical Society, 2008, 100, pp.186801. <10.1103/PhysRevLett.100.186801>. <hal-00266529v2>
  • E. B. Olshanetsky, Vincent Renard, Z.D. Kvon, J.-C. Portal, J.-M. Hartmann. Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots.. EPL - Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2006, 76 (4), pp.657. <10.1209/epl/i2006-10320-5>. <hal-00097094>
  • Vincent Renard, O. A. Tkachenko, Ze Don Kvon, E. B. Olshanetsky, A. I. Toropov, et al.. Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime.. Physical Review B : Condensed matter and materials physics, American Physical Society, 2005, 72, pp.075313. <hal-00003624>
  • Vincent Renard, Ze Don Kvon, G. Gusev, J.C Portal. Large positive magneto-resistance in high mobility 2D electron gas : interplay of short and long range disorder. Physical Review B : Condensed matter and materials physics, American Physical Society, 2004, 70, pp.033303. <hal-00001007v2>