Nombre de documents

100

Liste de publications


Article dans une revue25 documents

  • Zhang Liping, Jean-Francois De Marneffe, Floriane Leroy, Philippe Lefaucheux, Thomas Tillocher, et al.. Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation. Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (17), pp.175203. <10.1088/0022-3727/49/17/175203>. <hal-01324407>
  • Stefan Tinck, Thomas Tillocher, Remi Dussart, Erik Neyts, Annemie Bogaerts. Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation. Journal of Physics D: Applied Physics, IOP Publishing, 2016, <10.1088/0022-3727/49/38/385201>. <hal-01374746>
  • Floriane Leroy, Liping Zhang, Thomas Tillocher, Koichi Yatsuda, Kaoru Maekawa, et al.. Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48, pp.435202. <10.1088/0022-3727/48/43/435202>. <hal-01217648>
  • Stefan Tinck, Thomas Tillocher, Rémi Dussart, Annemie Bogaerts. Cryogenic etching of silicon with SF6 inductively coupled plasmas: a combined modelling and experimental study. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48, pp.155204. <10.1088/0022-3727/48/15/155204>. <hal-01135854>
  • Alexane Vital, M Vayer, Christophe Sinturel, Thomas Tillocher, Philippe Lefaucheux, et al.. Modification of poly(styrene) thin films and enhancement of cryogenic plasma etching resistance by ruthenium tetroxide vapor staining. Polymer, Elsevier, 2015, <10.1016/j.polymer.2015.08.062>. <hal-01228427>
  • Alexane Vital, Marylène Vayer, Christophe Sinturel, Thomas Tillocher, Philippe Lefaucheux, et al.. Polymer masks for structured surface and plasma etching. Applied Surface Science, Elsevier, 2015, 332, pp.237. <10.1016/j.apsusc.2015.01.040>. <hal-01219273>
  • Thomas Tillocher, Philippe Lefaucheux, Bertrand Boutaud, Remi Dussart. Alternated process for the deep etching of titanium. Journal of Micromechanics and Microengineering, IOP Publishing, 2014, 24, pp.075021. <10.1088/0960-1317/24/7/075021>. <hal-01015146>
  • Remi Dussart, Thomas Tillocher, Philippe Lefaucheux, Mohamed Boufnichel. Plasma cryogenic etching of silicon: from the early days to today's advanced technologies. Journal of Physics D: Applied Physics, IOP Publishing, 2014, pp.123001. <10.1088/0022-3727/47/12/123001>. <hal-00959819>
  • Nasreddine Mekkakia Maaza, Remi Dussart, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson. A novel amorphization-etch alternating process for Si(100). Journal of Micromechanics and Microengineering, IOP Publishing, 2013, 23, pp.045023. <10.1088/0960-1317/23/4/045023>. <hal-00831302>
  • Liping Zhang, Rami Ljazouli, Philippe Lefaucheux, Thomas Tillocher, Remi Dussart, et al.. Low Damage Cryogenic Etching of Porous Organosilicate Low-k Materials Using SF6/O2/SiF4. ECS Journal of Solid State Science and Technology, 2013, 2 (6), pp.N131. <10.1149/2.001306jss>. <hal-00831339>
  • Liping Zhang, Rami Ljazouli, Philippe Lefaucheux, Thomas Tillocher, Remi Dussart, et al.. Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film. Electrochemical and Solid-State Letters, Electrochemical Society, 2012, 2 (2), pp.N5. <10.1149/2.007302ssl>. <hal-00831289>
  • Mukesh Kulsreshath, Laurent Schwaederlé, Lawrence Overzet, Philippe Lefaucheux, Julien Ladroue, et al.. Study of dc micro-discharge arrays made in silicon using CMOS compatible technology. Journal of Physics D: Applied Physics, IOP Publishing, 2012, 45, pp.285202. <10.1088/0022-3727/45/28/285202>. <hal-00713105>
  • Laurent Schwaederlé, Mukesh Kulsreshath, Lawrence Overzet, Philippe Lefaucheux, Thomas Tillocher, et al.. Breakdown study of dc silicon micro-discharge devices. Journal of Physics D: Applied Physics, IOP Publishing, 2012, 45, pp.065201. <10.1088/0022-3727/45/6/065201>. <hal-00667649>
  • Thomas Defforge, Gaël Gautier, Thomas Tillocher, Remi Dussart, François Tran-Van. Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches. Journal of Vacuum Science and Technology A, American Vacuum Society, 2011, 30 (1), pp.010601. <10.1116/1.3665217>. <hal-00655000>
  • Thomas Defforge, Xi Song, Gaël Gautier, Thomas Tillocher, Remi Dussart, et al.. Scalloping removal on DRIE via using low concentrated alkaline solutions at low temperature. Sensors and Actuators A: Physical, Elsevier, 2011, 170 (1-2), pp.114. <10.1016/j.sna.2011.05.028>. <hal-00655001>
  • Thomas Tillocher, Wassim Kafrouni, Julien Ladroue, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects. Journal of Micromechanics and Microengineering, IOP Publishing, 2011, 21, pp.085005. <10.1088/0960-1317/21/8/085005>. <hal-00655002>
  • Remi Dussart, Lawrence Overzet, Philippe Lefaucheux, Thierry Dufour, Mukesh Kulsreshath, et al.. Integrated micro-plasmas in silicon operating in helium. The European Physical Journal D, EDP Sciences, 2010, 60, pp.601. <10.1140/epjd/e2010-00272-7>. <hal-00655009>
  • Remi Dussart, Lawrence J. Overzet, P Lefaucheux, Thierry Dufour, M Kulsreshath, et al.. Integrated micro-plasmas in silicon operating in helium. The European Physical Journal D, EDP Sciences, 2010, 60, pp.601-608. <10.1140/epjd/e2010-00272-7>. <hal-01303160>
  • Thomas Tillocher, Remi Dussart, Lawrence Overzet, Xavier Mellhaoui, Philippe Lefaucheux, et al.. Two Cryogenic Processes Involving SF6, O2, and SiF4 for Silicon Deep Etching. Journal of The Electrochemical Society, Electrochemical Society, 2008, 155 (3), pp.D187. <10.1149/1.2826280>. <hal-00349343>
  • Corinne Duluard, Remi Dussart, Thomas Tillocher, Laurianne Pichon, Philippe Lefaucheux, et al.. SO2 passivating chemistry for silicon cryogenic deep etching. Plasma Sources Science and Technology, IOP Publishing, 2008, 17, pp.045008. <10.1088/0963-0252/17/4/045008>. <hal-00349344>
  • Remi Dussart, Xavier Mellhaoui, Thomas Tillocher, Philippe Lefaucheux, Mohamed Boufnichel, et al.. The passivation layer formation in the cryo-etching plasma process. Microelectronic Engineering, Elsevier, 2007, 84, pp.1128. <10.1016/j.mee.2007.01.048>. <hal-00365894>
  • Thomas Tillocher, Remi Dussart, Xavier Mellhaoui, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Silicon cryo-etching of deep holes. Microelectronic Engineering, Elsevier, 2007, 84, pp.1120. <10.1016/j.mee.2007.01.148>. <hal-00365907>
  • Thomas Tillocher, Rémi Dussart, Xavier Mellhaoui, Philippe Lefaucheux, Nasreddine Mekkakia Maaza, et al.. Oxidation threshold in silicon etching at cryogenic temperatures. Journal of Vacuum Science and Technology A, American Vacuum Society, 2006, 24 (4), pp.1073-1082. <hal-00097766>
  • Thomas Tillocher, Philippe Lefaucheux, Xavier Mellhaoui, Remi Dussart, Pierre Ranson, et al.. Oxidation threshold in silicon etching at cryogenic temperatures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, 2006, 24 (4), pp.1073. <10.1116/1.2210946>. <hal-00365909>
  • Xavier Mellhaoui, Rémi Dussart, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson, et al.. SiOxFy passivation layer in silicon cryoetching. Journal of Applied Physics, American Institute of Physics, 2005, 98, pp.104901-10. <hal-00098638>

Communication dans un congrès71 documents

  • Jean-Francois De Marneffe, Zhang Liping, Mikhail Baklanov, Koichi Yatsuda, Kaoru Maekawa, et al.. Low-Damage etching of highly porous OSG low-k dielectrics. SPIE Advanced Lithography 2016, Feb 2016, San José, United States. <hal-01280267>
  • Remi Dussart, Thomas Tillocher, Philippe Lefaucheux. Cryogenic processes for advanced material plasma etching. Quo vadis : Complex plasmas - TR 24, Aug 2016, Hambourg, Germany. <hal-01374747>
  • Stefan Tinck, Erik Neyts, Thomas Tillocher, Remi Dussart, Annemie Bogaerts. Effects of gas and surface temperatures during cryogenic etching of silicon with SF6/O2. 69th Gaseous Electronic Conference, Oct 2016, Bochum, France. <hal-01379701>
  • Remi Dussart, Thomas Tillocher, Floriane Leroy, Philippe Lefaucheux, Koichi Yatsuda, et al.. Low damage cryoetching of low-K materials. SPIE Advanced Lithography 2015, Feb 2015, San José, United States. 2015. <hal-01151543>
  • Thomas Tillocher, Floriane Leroy, Zhang Liping, Philippe Lefaucheux, Christian Dussarat, et al.. Reduction of plasma induced damage in cryogenic etching of low-k materials. 4th French Symposium on Emerging Technologies for micro-nanofabrication, Nov 2015, Ecully, France. 2015. <hal-01277115>
  • Liping Zhang, Jean-Francois De Marneffe, Floriane Leroy, Rami Ljazouli, Philippe Lefaucheux, et al.. A novel low temperature etch approach to reduce ULK plasma damage. Plasma Etch and Strip in Microtecnology, Apr 2015, Leuven, Belgium. 2015. <hal-01151524>
  • Floriane Leroy, Thomas Tillocher, Liping Zhang, A. Girard, Christophe Cardinaud, et al.. Cryogenic Etching of Porous Organosilicate Low-k Materials: Fluorine based plasma analysis. Plasma Etch and Strip in Microtechnology, Apr 2015, Leuven, Belgium. 2015. <hal-01151528>
  • Stefan Tinck, Erik Neyts, Thomas Tillocher, Remi Dussart, Annemie Bogaerts. Cryogenic Etching of Silicon with SF6/O2/SiF4 plasmas: a modeling and experimental study. Plasma Etch and Strip in Microtechnology, Apr 2015, Leuven, Belgium. 2015. <hal-01151530>
  • Thomas Tillocher, Remi Dussart, Floriane Leroy, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Plasma Cryogenic Etching: from 3D Integration to Low-k Materials. China Semiconductor Technology International Conference, Mar 2015, Shanghai, China. 2015. <hal-01151533>
  • Edouard Laudrel, Thomas Tillocher, Philippe Lefaucheux, Bertrand Boutaud, Remi Dussart. Bulk titanium deep etching by plasma processes. , 20th International Colloquium on Plasma Processes (CIP), Jun 2015, Saint-Etienne, France. <hal-01166023>
  • Thomas Tillocher, Floriane Leroy, Liping Zhang, Philippe Lefaucheux, Koichi Yatsuda, et al.. Reduction of plasma induced damage of porous low-k materials using a cryogenic etching process. 22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium. 2015. <hal-01228448>
  • Stefan Tinck, E.C. Neyts, Thomas Tillocher, Remi Dussart, Annemie Bogaerts. Cryogenic etching of silicon with SF6/O2/SiF4 plasmas: a modelling and experimental study. 22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium. <hal-01228451>
  • Floriane Leroy, Thomas Tillocher, Liping Zhang, Philippe Lefaucheux, Koichi Yatsuda, et al.. Cryogenic etching of porous organosilicate low-k materials: Reduction of plasma induced damage. AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States. <hal-01228458>
  • Nicolas Gosset, Thomas Tillocher, Floriane Leroy, Julien Ladroue, Philippe Lefaucheux, et al.. Limitation of surface defects in deep GaN etching. AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States. <hal-01228462>
  • Edouard Laudrel, Thomas Tillocher, Philippe Lefaucheux, Bertrand Boutaud, Remi Dussart. DRY DEEP ETCHING OF BULK TITANIUM BY PLASMA PROCESSES. AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States. <hal-01228465>
  • Nicolas Gosset, Floriane Leroy, Thomas Tillocher, Julien Ladroue, Philippe Lefaucheux, et al.. Surface state improvement in GaN deep etching for power electronics applications. 37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan. <hal-01228470>
  • Floriane Leroy, Thomas Tillocher, Philippe Lefaucheux, Remi Dussart, Koichi Yatsuda, et al.. Cryoetching processes applied to ULK material. 37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan. <hal-01228477>
  • Alexane Vital, Mohamed Boufnichel, Remi Dussart, Nicolas Gosset, Philippe Lefaucheux, et al.. Submicronic etched features of silicon with high aspect ratio obtained by cryogenic plasma deep-etchingthrough perforated polymer thin films. 2015 MRS Spring Meeting & Exhibit, Apr 2015, San francisco, United States. 2015. <hal-01151542>
  • Floriane Leroy, Thomas Tillocher, Philippe Lefaucheux, Remi Dussart, Christian Dussarat, et al.. Cryoetching processes applied to ULK material. 37th International Symposium on Dry process , Nov 2015, Awaji, Japan. <hal-01287233>
  • Remi Dussart, Thomas Tillocher, Nicolas Gosset, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Cryoetching of Silicon and Advanced Materials for 3D Interconnects. 226th meeting of the Electroschemical Society, Oct 2014, Cancun, Mexico. <hal-01151844>
  • Nicolas Gosset, Julien Ladroue, Thomas Tillocher, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices. 226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico. <hal-01151851>
  • Nicolas Gosset, Julien Ladroue, Thomas Tillocher, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Effect of surface fluorination on GaN deep dry etching defects. Plasma Etch and Strip in Microtechnology, May 2014, Grenoble, France. <hal-01057239>
  • Alexane Vital, Thomas Tillocher, Remi Dussart, Marylène Vayer, Christophe Sinturel. Submicrometric structured silicon surfaces obtained from polymer blend film by silica replication and cryogenic plasma etching. Plasma Etch and Strip in Microtechnology, May 2014, Grenoble, France. <hal-01057586>
  • Remi Dussart, Thomas Tillocher, Nicolas Gosset, Alexane Vital, Philippe Lefaucheux, et al.. Plasma cryoetching processes for silicon and advanced materials. International Conference on Microelectronics and Plasma Technology, Jul 2014, Gunsan, South Korea. <hal-01057585>
  • Thomas Tillocher, Xiao Liu, Alexane Vital, Nicolas Gosset, Philippe Lefaucheux, et al.. Multiscale etching of holes by cryogenic silicon etching. Plasma Etch and Strip in Microtechnology, May 2014, Gernoble, France. <hal-01057242>
  • Thomas Tillocher, Alexane Vital, Marylène Vayer, Nicolas Gosset, Philippe Lefaucheux, et al.. Cryogenic etching of submicronic features in silicon using masks based on porous polymer films. 226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico. <hal-01151839>
  • Thomas Tillocher, Julien Ladroue, Philippe Lefaucheux, Mohamed Boufnichel, Remi Dussart. Plasma surface interactions in deep dry etching. Workshop on particle - surface interactions : from surface analysis to materials processing, Jun 2013, Luxembourg, Luxembourg. 2013. <hal-00831337>
  • Remi Dussart, Philippe Lefaucheux, Thomas Tillocher, Pierre Ranson, Mohamed Boufnichel, et al.. Applications of cryogenic plasma etching for microtechnology and advanced CMOS manufacturing. Plasma Etch and Strip in Microtechnology, Mar 2013, Louvain, Belgium. <hal-00831344>
  • Remi Dussart, Julien Ladroue, Thomas Tillocher, Mohamed Boufnichel, Nicolas Gosset, et al.. Deep etching of gallium nitride by chlorine based plasma. Journées Nationales des Technologies Emergentes, May 2013, Evian, France. <hal-00831346>
  • Thomas Tillocher, Philippe Lefaucheux, Bertrand Boutaud, Remi Dussart. Reproducible process for Titanium deep etching. Plasma Etch and Strip in Microtechnology, Mar 2013, Louvain, Belgium. <hal-00831358>
  • Thomas Tillocher, Philippe Lefaucheux, Remi Dussart. Deep etching processes for silicon micro- and nano-machining. Le Studium workshop : Bottom-up approaches to nanotechnology, May 2013, Orléans, France. <hal-00831360>
  • Remi Dussart, Philippe Lefaucheux, Thomas Tillocher, Nicolas Gosset, Julien Ladroue, et al.. Plasma deep etching of silicon, titanium and gallium nitride for microtechnology. AVS 60th International Symposium & Exhibition, Oct 2013, United States. <hal-01006364>
  • Nicolas Gosset, Julien Ladroue, Thomas Tillocher, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Dry deep etching of GaN wide-bandgap semiconductor. 19th International Vacuum Conference, Sep 2013, Paris, France. <hal-01056606>
  • Remi Dussart, Mukesh Kulsreshath, Valentin Félix, Lawrence Overzet, Judith Golda, et al.. Integrated microplasmas on silicon: performances and limitations. 19th International Vacuum Conference, Sep 2013, Paris, France. <hal-01056618>
  • Thomas Tillocher, Philippe Lefaucheux, Bertrand Boutaud, Remi Dussart. Reproducible process for titanium deep etching. 19th International Vacuum Conference, Sep 2013, Paris, France. <hal-01057233>
  • Nicolas Gosset, Julien Ladroue, Thomas Tillocher, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Dry deep etching of GaN wide band-gap Semiconductor. AVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States. <hal-01057235>
  • Thomas Tillocher, Philippe Lefaucheux, Bertrand Boutaud, Remi Dussart. Titanium deep etching for medical applications. AVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States. <hal-01057236>
  • Mukesh Kulsreshath, Laurent Schwaederlé, Lawrence Overzet, Thomas Tillocher, Sébastien Dozias, et al.. Development of microdicharges in silicon operating in DC for medical applications. 4th International Conference on Plasma Medecine, Jun 2012, Orléans, France. <hal-00831349>
  • Mukesh Kulsreshath, Laurent Schwaederlé, Lawrence Overzet, Thomas Tillocher, Sébastien Dozias, et al.. Development of microdicharge arrays in silicon operating in DC and AC. European Physical Society/International Conference on Plasma Physics, Jul 2012, Stockholm, Sweden. <hal-00831351>
  • Thomas Tillocher, Judith Golda, Philippe Lefaucheux, Bertrand Boutaud, Pierre Ranson, et al.. Investigations in SF6 and Cl2/Ar plasmas used for titanium deep etching by means of mass spectrometry. ESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal. <hal-00831352>
  • Thomas Tillocher, Jérémy Pereira, Nasreddine Mekkakia Maaza, Philippe Lefaucheux, Pierre Ranson, et al.. Formation of black silicon by cryogenic plasma etching processes. Micro- and Nano-Engineering (MNE), Sep 2012, Toulouse, France. <hal-00831357>
  • Remi Dussart, Mukesh Kulsreshath, Laurent Schwaederlé, Valentin Felix, Philippe Lefaucheux, et al.. Development and limitations of microplasma arrays on silicon operating in DC. AVS 59th International Symposium and Exhibition, Oct 2012, United States. <hal-00747741>
  • Thomas Tillocher, Philippe Lefaucheux, Julien Ladroue, Mohamed Boufnichel, Pierre Ranson, et al.. Optimization of STiGer process used to etch high aspect ratio silicon microstructures. AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States. <hal-00747743>
  • Julien Ladroue, Mohamed Boufnichel, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson, et al.. Deep GaN Etching : Role of SiCl4 in Plasma Chemistry. AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States. <hal-00747746>
  • Liping Zhang, Rami Ljazouli, Philippe Lefaucheux, Thomas Tillocher, Remi Dussart, et al.. Damage free cryogenic etching of porous organosilicate low-k films for advanced interconnect application. AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States. <hal-00747749>
  • Remi Dussart, Thierry Dufour, Mukesh Kulsreshath, Valentin Felix, Laurent Schwaederlé, et al.. Development and characterization of microplasma arrays on Silicon. International Workshop on Physics of Microplasmas, May 2012, Bochum, Germany. <hal-00707932>
  • Remi Dussart, Mukesh Kulsreshath, Valentin Felix, Lawrence Overzet, Thomas Tillocher, et al.. Integrated microplasmas on silicon: a new tool for lab-on-a-chip applications. Cancer Cells On Chip, Jun 2012, Lyon, France. <hal-00707933>
  • Mukesh Kulsreshath, Laurent Schwaederlé, Valentin Felix, Philippe Lefaucheux, Thomas Tillocher, et al.. Caractérisation de matrices de micro plasmas sur silicium. XIIeme congrès de la division Plasmas de la Société Française de Physique, May 2012, Orléans, France. <hal-00707935>
  • Julien Ladroue, Mohamed Boufnichel, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson, et al.. Deep Gallium Nitride Etching: ways to avoid etching defects. 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Mar 2011, Nagoya, Japan. <hal-00696396>
  • Julien Ladroue, Mohamed Boufnichel, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson, et al.. Deep GaN Etching by Inductively Coupled Plasma. HeteroSiC-WASMPE 2011, Jun 2011, Tours, France. <hal-00696418>
  • Julien Ladroue, Mohamed Boufnichel, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson, et al.. Obtaining a smooth surface after deep GaN etching. 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France. <hal-00696419>
  • Wassim Kafrouni, Thomas Tillocher, Julien Ladroue, Philippe Lefaucheux, Mohamed Boufnichel, et al.. STiGer process for silicon deep etching: extended scalloping reduction on submicron trenches. 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France. <hal-00696422>
  • Thomas Tillocher, Julien Ladroue, Wassim Kafrouni, Mukesh Kulsreshath, Philippe Lefaucheux, et al.. Deep etching of bulk titanium by plasma. 18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France. <hal-00696425>
  • Thomas Tillocher, Wassim Kafrouni, Julien Ladroue, Philippe Lefaucheux, Pierre Ranson, et al.. Deep silicon etching of 0.8 µm to hundreds of microns wide trenches with the STiGer process. AVS 58th International Symposium & Exhibition, Oct 2011, Nashville, United States. <hal-00696428>
  • Mukesh Kulsreshath, Laurent Schwaederlé, Philippe Lefaucheux, Thomas Tillocher, Julien Ladroue, et al.. Characterisation of Silicon based micro discharge plasma arrays in Direct Current (DC) at atmospheric pressure. 6th International Workshop on Microplasmas, Apr 2011, Paris, France. <hal-00707925>
  • Remi Dussart, Mukesh Kulsreshath, Lawrence Overzet, Laurent Schwaederlé, Thomas Tillocher, et al.. Micro Hollow Cathode Discharge Arrays in silicon devices. 63rd Gaseous Electronics Conference, Oct 2010, Paris, France. <hal-00681902>
  • Thomas Tillocher, Wassim Kafrouni, Vincent Girault, Julien Ladroue, Philippe Lefaucheux, et al.. Optimization of STiGer process for silicon deep etching. 63rd Gaseous Electronics Conference, Oct 2010, Paris, France. <hal-00696366>
  • Julien Ladroue, Mohamed Boufnichel, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson, et al.. Deep Gallium Nitride Etching. 63rd Gaseous Electronics Conference, Oct 2010, Paris, France. <hal-00696376>
  • Remi Dussart, Mukesh Kulsreshath, Thierry Dufour, Lawrence Overzet, Philippe Lefaucheux, et al.. Ignition and extinction of a Micro Hollow Cathode Discharge operating in DC regime. AVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States. <hal-00696390>
  • Julien Ladroue, Mohamed Boufnichel, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson, et al.. Deep Inductively Coupled Plasma Etching of GaN. AVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States. <hal-00696393>
  • Julien Ladroue, Remi Dussart, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson. Gravure du GaN pour la prochaine génération de diodes Schottky. Workshop MNTS 12-20, Minatec, Mar 2010, Grenoble, France. <hal-00487358>
  • Thomas Tillocher, Vincent Girault, Guillaume Gomme, Franck Moro, Laurianne Pichon, et al.. Silicon deep cryoetching with the STiGer process. 3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France. <hal-00487360>
  • Julien Ladroue, Mohamed Boufnichel, Thomas Tillocher, Philippe Lefaucheux, Pierre Ranson, et al.. Deep GaN Etching by Inductively Coupled Plasma. 3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France. <hal-00487363>
  • Remi Dussart, Thierry Dufour, Thomas Tillocher, Mukesh Kulsreshath, Olivier Aubry, et al.. Study of an MHCD operating in He using optical and electrical diagnostics. Diagnostics Microplasmas, Mar 2010, Germany. <hal-00487365>
  • Corinne Duluard, Thomas Tillocher, Laurianne Pichon, Remi Dussart, Philippe Lefaucheux, et al.. A comparative study on O2 and SO2 passivating chemistry for silicon deep cryogenic etching. AVS 53rd International Symposium & Exhibition, Nov 2009, San Francisco, United States. <hal-00442683>
  • Laurianne Pichon, Corinne Duluard, Thomas Tillocher, Remi Dussart, Philippe Lefaucheux, et al.. SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature. 18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105, 2007. <hal-00444241>
  • Remi Dussart, Thomas Tillocher, El-Houcine Oubensaid, Philippe Lefaucheux, Pierre Ranson, et al.. Enhanced robustness of the cryogenic process for silicon deep etching. Micro- and Nano-Engineering, Sep 2007, Copenhague, Denmark. <hal-00444248>
  • Remi Dussart, Philippe Lefaucheux, Pierre Ranson, Laurianne Pichon, Corinne Duluard, et al.. Cryoetching of silicon for MEMS and microelectronic components. 16th International Colloquium on Plasma Processes, Jun 2007, France. <hal-00442662>
  • Remi Dussart, Philippe Lefaucheux, Pierre Ranson, Laurianne Pichon, Corinne Duluard, et al.. A new generation of cryogenic processes for silicon deep etching. 60th Gaseous Electronics Conference, Oct 2007, Arlington, United States. <hal-00442668>
  • Xavier Mellhaoui, Remi Dussart, Thomas Tillocher, Philippe Lefaucheux, Lawrence Overzet, et al.. SiOxFy passivation layer characterization in the silicon cryoetching. Eighth International Conference on Advanced Surface Engineering (8th ICASE), Apr 2006, Japan. <hal-00442663>
  • Thomas Tillocher, Remi Dussart. Mechanisms and optimization in the cryogenic etching plasma process. Workshop on Silicon dry processing, Sep 2006, Aix-La-Chapelle, Germany. <hal-00442676>

Poster4 documents

  • Chengkun Tu, Ying Cui, Remi Dussart, Thomas Tillocher, Philippe Lefaucheux. Deep silicon etching: STiGer vs. BOSCH. Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France. <hal-01344704>
  • Floriane Leroy, Nataniel Brochu, Romain Chanson, Remi Dussart, Thomas Tillocher, et al.. Advance in low-k cryogenic etching of porous organoscilicate : Investigation of a new gas with higher boiling point Organic (HBPO) and comparison with C4F8. Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France. <hal-01344722>
  • Stefan Tinck, Erik Neyts, Thomas Tillocher, Remi Dussart, Annemie Bogaerts. Cryogenic etching of silicon with SF6/O2: a computational and experimental study. Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France. <hal-01344725>
  • Valentin Felix, Vincent Ah-Leung, Judith Golda, Philippe Lefaucheux, Olivier Aubry, et al.. Near Atmospheric Pressure Etching of Silicon by Microplasma. International workshop on microplasmas, May 2015, Newark, France. <hal-01166020>