Thierry Taliercio
22%
Libre accès
197
Documents
Affiliations actuelles
- 1100589
Identifiants chercheurs
- thierry-taliercio
- 0000-0002-6425-9981
- IdRef : 10103282X
Domaines de recherche
Publications
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0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montreal, Canada. pp.1-2, ⟨10.1109/IRMMW-THz57677.2023.10299360⟩
Communication dans un congrès
hal-04282977v1
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Near-field thermal radiation, thermophotovoltaics and polaritonsThermal Polaritonics Workshop, Apr 2023, Tokyo, France
Communication dans un congrès
hal-04310983v1
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Low bandgap (near-field) TPV: materials and structuresThe 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States
Communication dans un congrès
hal-04156802v1
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Waveguide-integrated optically-controlled THz modulator47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022, Aug 2022, Delft, Netherlands. ⟨10.1109/IRMMW-THz50927.2022.9895784⟩
Communication dans un congrès
hal-04229373v1
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Waveguide-Integrated optically-tuned THz modulatorFrench-German TeraHertz Conference, May 2022, La gande Motte, France
Communication dans un congrès
hal-04283152v1
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Solid-state/optical alternatives to thermoelectricity for thermal-to-electrical energy conversion18th European Conference on Thermoelectrics (ECT), Oct 2022, Barcelona, Spain
Communication dans un congrès
hal-03813779v1
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Controlling near-field thermal energy for conversion devices and sensingProgram on Emerging Regimes and Implications of Quantum and Thermal Fluctuational Electrodynamics (Flectro2022), Kavli Institute of Theoretical Physics (KITP), Jul 2022, UC Santa Barbara, United States. ⟨10.26081/K6R93X⟩
Communication dans un congrès
hal-03813941v1
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Low-energy bandgap thermophotovoltaic cells for harnessing near-field thermal photonsC’Nano 2020, The Nanoscience meeting, Nov 2021, Toulouse, France
Communication dans un congrès
hal-03457483v1
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Low-energy bandgap thermophotovoltaic cells for medium-grade heat sources2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France
Communication dans un congrès
hal-03437899v1
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Efficient near-field thermophotovoltaic conversion with InSb cells2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France
Communication dans un congrès
hal-03438226v1
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Near-field thermophotovoltaic conversion with high electrical power density and efficiency above 14%MRS Spring meeting, Symposium "Nanoscale heat transport", Apr 2021, Seattle (remote), United States
Communication dans un congrès
hal-03649749v1
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Photogenerated metasurface-based THz ModulatorGDR Plasmonique Active, Jun 2021, Troyes (France), France
Communication dans un congrès
hal-04283765v1
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Efficient near-field thermophotovoltaic conversion with InSb cellsSFT "Nanoscale Heat Transport Days", Jan 2020, Paris, France
Communication dans un congrès
hal-02459116v1
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Long-wave infrared spectral filter with semiconductor materialsNanophotonics VIII, Apr 2020, Online Only, United States. pp.43, ⟨10.1117/12.2554384⟩
Communication dans un congrès
hal-03224540v1
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Recent advances in near-field thermophotovoltaicssTE2C virtual colloquium, Daniele M. Trucchi, Gaspare Varvaro (CNR-ISM, Roma, Italy), Nov 2020, Online, Italy
Communication dans un congrès
hal-03018774v1
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Low pump irradiance to modulate THz waves driven by photogenerated carriers in an InAs slab44th International Conference on Infrared, Millimeter, and Terahertz Waves, Sep 2019, Paris, France
Communication dans un congrès
hal-02356630v1
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Semiconductor-based nanostructures for spectral filteringSPIE Nanoscience + Engineering 2019, Aug 2019, SAN DIEGO, United States. ⟨10.1117/12.2527758⟩
Communication dans un congrès
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Near-field radiative heat transfer measurements between a sphere and a substrate: large temperature differences, geometrical effects and materialsMRS Spring Meeting Symposium "Nanoscale Heat Transport: Fundamentals", Apr 2019, Phoenix, United States
Communication dans un congrès
hal-02043071v1
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Near-field thermophotovoltaic conversion with InSb cellsE-MRS Fall Meeting Symposium "Nanomaterials thermal transport properties and nanothermodynamics, Sep 2019, Varsovie, Poland
Communication dans un congrès
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Semiconductor nanostructures for spectral filteringSPP 9, May 2019, COPENHAGUE, Denmark
Communication dans un congrès
hal-02329474v1
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Mesures expérimentales du transfert radiatif en champ proche et de la conversion thermophotovoltaïqueJournées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France
Communication dans un congrès
hal-02043083v1
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Near-field radiative heat transfer experiments and thermophotovoltaic conversionFocus Session on « Fluctuational Electrodynamics and Heat Transfer », Progress In Electromagnetism Research (PIERS) 2019 conference, Jun 2019, Rome, Italy
Communication dans un congrès
hal-02043078v1
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion5th International Conference on Near-Field Optics, Nanophotonics and Related Techniques (NFO), Aug 2018, Troyes, France
Communication dans un congrès
hal-02025479v1
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Absorbeurs parfaits à base de semi-conducteurs fortement dopés pour la spectroscopie vibrationnelle exaltéeGroupement de Recherches 3430, Plasmonique Moléculaire, Sprectroscopies Exaltées, Journées plénières, 2018, Paris-Saclay, France
Communication dans un congrès
hal-02083488v1
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Mid-infrared surface plasmon polaritons in a novel highly doped semiconductor34th International Conference on the Physics of Semiconductors, 2018, Montpellier, France
Communication dans un congrès
hal-02084182v1
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Plasmonique tout semiconducteur pour les bio-capteurs16èmes JNMO Journées Nano, Micro, et Opto-électronique, 2018, Cap Esterel-Agay, France
Communication dans un congrès
hal-02078651v1
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Design of efficient photovoltaic cells for near-field thermophotovoltaicsEurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Communication dans un congrès
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependenceGDRe workshop on Thermal Nanosciences and NanoEngineering, Oct 2018, Lyon, France
Communication dans un congrès
hal-01932675v1
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Plasmonique tout semiconducteur pour l’infrarougeJournée du département Photonique et Onde de l’Institut d’Electronique et des Systèmes, 2018, Montpellier, France
Communication dans un congrès
hal-02078647v1
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III-V semiconductor plasmonics for microfluidic molecular sensingFinal conference of PROMIS, Photonics by the Lake, 2018, Windermere, United Kingdom
Communication dans un congrès
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Highly doped semiconductors based plasmonic devicesFunctional Materials, Materials and devices for green photonics, EMRS Spring Meeting 2018, 2018, Strasbourg, France
Communication dans un congrès
hal-02078681v1
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Thermophotovoltaic devices for solar and thermal energy conversionJournées Nationales sur l'Énergie Solaire «Congrès JNES 2018», Jun 2018, Villeurbanne, France
Communication dans un congrès
hal-01841462v1
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Plasmonic and metamaterials devices operating from mid infrared to THz frequencies based on highly doped semiconductorsGDR NanoTeraMIR, 2018, Montpellier, France
Communication dans un congrès
hal-02078666v1
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependenceEurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Communication dans un congrès
hal-02021385v1
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All-semiconductor plasmonic metamaterials for mid-infrared perfect absorption and selective thermal emissionNanophotonics and Micro/Nano Optics International Conference, 2018, Roma, Italy
Communication dans un congrès
hal-02083669v1
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Etude expérimentale du transfert radiative en champ proche pour la conversion thermophotovoltaïqueJournées Nationales sur l’Energie Solaire, Jun 2018, Villeurbanne, France
Communication dans un congrès
hal-01832256v1
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Surface enhanced infrared absorption with highly doped InAsSb plasmonic nanostructuresGDR NanoTeraMIR, 2018, Montpellier, France
Communication dans un congrès
hal-02084508v1
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Plasmonic bio-sensing based on highly doped semiconductorsSeminary at Politecnico di Milano, 2018, Milan, Italy
Communication dans un congrès
hal-02078688v1
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Plasmonique tout-semi-conducteur pour les applications du moyen-infrarougeCongrès de la Société Française d’Optique, 2018, Toulouse, France
Communication dans un congrès
hal-02084338v1
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All-semiconductor mid-IR plasmonics for femtolitre IR-spectroscopyInternational Conference on Biomedical Photonics, 2018, La Grande Motte, France
Communication dans un congrès
hal-02084536v1
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Zero-dimensional Zener Tunnelling and Plasmon Resonances due to N- and H- Incorporation in the Narrow Gap InAsEDISON (advanced) Fall Conference, 2017, Buffalo, United States
Communication dans un congrès
hal-01905721v1
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Etude spectroscopique de structures résonantes à plasmons de surface localisés par nanoscopie infrarouge au voisinage de la fréquence plasma20ème Forum des microscopies à sonde locale, Mar 2017, Juvignac, France
Communication dans un congrès
hal-01905800v1
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Spectroscopic investigation of localized surface plasmon resonator structure by infrared nanoscopy near the plasma frequencyMETA’17, 2017, Incheon, South Korea
Communication dans un congrès
hal-01905773v1
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Universal metamaterial absorber11th International Congress on Engineered Material Platforms for Novel Wave Phenomena – Metamaterials, 2017, Marseille, France
Communication dans un congrès
hal-01905767v1
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GaSb oxidation for plasmonic enhanced mid-IR molecular spectroscopyNanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain
Communication dans un congrès
hal-01905752v1
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THz absorbers with highly doped semiconductors based in plasmonic nano-resonatorsE-MRS Spring Meeting, 2017, Strasbourg, France
Communication dans un congrès
hal-01905779v1
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Plasmonic bio-sensing based on highly doped semiconductorsOptics + Photonics (SPIE), 2017, San Diego, United States
Communication dans un congrès
hal-01905149v1
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Surface enhanced infrared absorption with highly doped InAsSb plasmonic nano-antenna arraysNanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain
Communication dans un congrès
hal-01905761v1
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Mid-IR surface enhanced absorption spectroscopy with 1D Highly Si-Doped InAsSb nano-antennasE-MRS Spring Meeting, 2017, Strasbourg, France
Communication dans un congrès
hal-01905789v1
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THz absorbers with Sb-III highly doped semiconductors based in plasmonic nano-resonatorsIEEE Nanotechnology Materials and Devices Conferences (NDMC), 2016, Toulouse, France
Communication dans un congrès
hal-01903774v1
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Brewster mode : optical monitoring of the semiconductor doping levelPhotonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès
hal-01903684v1
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Highly doped InAsSb nanoribbon on GaSb for plasmonics applications13th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2016, Beijing, China
Communication dans un congrès
hal-01903751v1
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Optimization of plasmonic grating resonators based on highly-doped semiconductors for sensing applications using 2D finite-difference time-domain simulationsPhotonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès
hal-01903599v1
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Tuning of the localized surface plasmon wavelength in highly doped InAsSb/GaSb nanostructuresPhotonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès
hal-01903606v1
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Highly doped InAsSb plasmonic arrays for mid-infrared biosensingIEEE Nanotechnology Materials and Devices Conferences (NDMC), 2016, Toulouse, France
Communication dans un congrès
hal-01903761v1
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All semiconductor plasmonics for bio-sensingInternational Conference on Energy, Materials & Photonics, 2016, Troyes, France
Communication dans un congrès
hal-01903594v1
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Surface-enhanced infrared absorption using highly doped InAsSb/GaSb Nanostructures2016 MRS (Material Research Society) Fall Meeting, 2016, Boston, United States
Communication dans un congrès
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Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩
Communication dans un congrès
hal-01436488v1
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Highly doped semiconductor plasmonics for mid-IR applications7th International Conference on Surface Plasmon Photonics, 2015, Jérusalem, Israel
Communication dans un congrès
hal-01903569v1
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Observation of Fano resonances in highly doped semiconductor plasmonic resonatorsSPIE NanoScience + Engineering, 2015, San Diego, United States
Communication dans un congrès
hal-01903562v1
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Brewster “mode” or how to optically monitor the doping concentration in highly doped semiconductor layersMETA15 Conference, 2015, New York, United States
Communication dans un congrès
hal-01903564v1
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Technologies of oxide confinement and high contrast grating mirrors for mid-infrared VCSELsICTON 2014, Jul 2014, Graz, Austria. pp.1-4, ⟨10.1109/ICTON.2014.6876343⟩
Communication dans un congrès
hal-01108786v1
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GaSb-based grating regrowth for mid-infrared optoelectronic devices18th IC-MBE, 2014, Flagstaff, United States
Communication dans un congrès
hal-01805131v1
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Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applicationsPhotonics Plamsonics Magneto-optics 2013, IMAGINENANO, 2013, Bilbao, Spain
Communication dans un congrès
hal-01875563v1
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GaSb-based all-semiconductor mid-IR plasmonicsPhotonics West (SPIE), 2013, San Francisco, United States
Communication dans un congrès
hal-01864230v1
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All-semiconductor plasmonics for mid-IR applicationsOptics + Photonics (SPIE), 2013, San Diego, United States
Communication dans un congrès
hal-01864287v1
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GaAs/GaSb(001) nanostructures at the atomic scaleSPIE Photonics West, Opto-2013, 2013, San Francisco, United States
Communication dans un congrès
hal-01870872v1
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Metal-free plasmonics for infrared applications7th Russian-French workshop on Nanosciences and Nanotechnologies, 2013, Novosibirsk, Russia
Communication dans un congrès
hal-01864257v1
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Highly doped semiconductors for mid-infrared plasmonics36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012), 2012, Porquerolles, France
Communication dans un congrès
hal-01862980v1
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Pseudo-volume-plasmon into arrays of doped and un-doped semiconductors3rd International conference on meta-materials, photonic crystals and plasmonics, META12, 2012, Paris, France
Communication dans un congrès
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GaAs-based monolithic high contrast gratings for mid-infrared VCSELsSemiconductor and Integrated OptoElectronics 2012 (SIOE), 2012, Cardiff, United Kingdom
Communication dans un congrès
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Surface and localized plasmons polaritons on arrays of doped and un-doped semiconductors11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès
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AlOx/GaAs high contrast grating mirrors for mid infrared VCSELsICTON 2012, Jul 2012, Coventry, United Kingdom. pp.1-3, ⟨10.1109/ICTON.2012.6254396⟩
Communication dans un congrès
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Experimental study of surface plasmons polaritons on arrays of doped and un-doped semiconductors3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics (META2012), 2012, Paris, France
Communication dans un congrès
hal-01862196v1
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Nanostructured arrays of doped semiconductors for IR nanophotonicsPhotonics Plamsonics Magneto-optics 2011, IMAGINENANO, 2011, Bilbao, Spain
Communication dans un congrès
hal-01858342v1
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Méta-matériau à bande bande interdite photonique ajustable à base de réseaux de semi-conducteursColloque National Méta-matériaux – Orsay, 2011, Orsay, France
Communication dans un congrès
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Optimized GaAs High Contrast Grating Design and Fabrication for Mid-infrared Application at 2.3 μmFrontiers in Optics 2011, Oct 2011, San Jose, United States. pp.CD-ROM Proceedings
Communication dans un congrès
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MBE growth of highly tensile strained Ga(In)As/GaSb quantum wells16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany
Communication dans un congrès
hal-01830962v1
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Highly Tensile-Strained Ga0.5In0.5As/GaSb Heterostructures37th International Symposium on Compound Semiconductors (ISCS2010), 2010, Takamatsu, Japan
Communication dans un congrès
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Tensile-Strained Ga1-xInxAs / GaSb Heterostructures for Mid-IR Applications10th Mid-Infrared Optcal Materials and Devices International Conference (MIOMD-10), 2010, Shanghai, China
Communication dans un congrès
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryJournées Boîtes Quantiques, Jun 2009, Grenoble, France
Communication dans un congrès
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Which quasi-particles in wide band gap bulk microcavities ?8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan
Communication dans un congrès
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland
Communication dans un congrès
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan
Communication dans un congrès
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Linear polarization of the emission of a single polar GaN/AlN quantum dot7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States
Communication dans un congrès
hal-01306799v1
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Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain
Communication dans un congrès
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩
Communication dans un congrès
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Radiative lifetime in wurtzite GaN/AlN quantum dots.International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩
Communication dans un congrès
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Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany
Communication dans un congrès
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Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan
Communication dans un congrès
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Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩
Communication dans un congrès
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Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩
Communication dans un congrès
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Optical properties of ZnO nanorods and nanowiresE-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩
Communication dans un congrès
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Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France
Communication dans un congrès
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Carrier recombination processes in GaAsN: from the dilute limit to alloyingE-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩
Communication dans un congrès
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Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillarsEuropean Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., European Materials Research Society, May 2004, Strasbourg, France. pp.783-790, ⟨10.1016/j.spmi.2004.09.034⟩
Communication dans un congrès
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès
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New model of electron-hole pair recombination in (Ga,In)N/GaN low-dimensional systems5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan
Communication dans un congrès
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Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩
Communication dans un congrès
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Optical properties of GaN/AlN quantum boxes under high photo-excitation5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩
Communication dans un congrès
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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩
Communication dans un congrès
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Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsNInternational Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩
Communication dans un congrès
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Photo-induced interband absorption in group-III nitride quantum wellsInternational Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.247-249, ⟨10.1016/S1386-9477(02)00785-3⟩
Communication dans un congrès
hal-01322938v1
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Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InPSéminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France
Communication dans un congrès
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Porous silicon membranes and sensors applicationsEUROSENSORS VIII, 1994, Toulouse, France
Communication dans un congrès
hal-01792562v1
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Elastic characterization of porous silicon by acoustic microscopyICSMM-7, 1994, Banff, Canada
Communication dans un congrès
hal-01792473v1
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Positron annihilation investigation of porous siliconICSMM-7, 1994, Banff, Canada
Communication dans un congrès
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Acoustic microscopy investigation of porous siliconE-MRS Spring Conf., 1994, Strasbourg, France
Communication dans un congrès
hal-01792448v1
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Positron lifetime spectroscopy of n-type and p-type porous siliconE-MRS Spring Conf., 1994, Strasbourg, France
Communication dans un congrès
hal-01792466v1
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Porous silicon membranes for gas sensors applicationsE-MRS Spring Conf., 1994, Strasbourg, France
Communication dans un congrès
hal-01792459v1
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Infrared near-field nanoscopy study of all-semiconductor plasmonic gratings near plasma frequency15th International Conference on Near-field Optics, Nanophotonics and related Techniques (NFO-15), Aug 2018, Troyes, France
Poster de conférence
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Which quasi-particle in wide band gap bulk microcavities?Poster de conférence hal-01306849v1 |
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Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipoleWolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩
Poster de conférence
hal-01309696v1
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Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria.
Poster de conférence
hal-01309701v1
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Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France
Poster de conférence
hal-01312282v1
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Carrier recombination dynamics in GaN/AlN quantum dots.EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France
Poster de conférence
hal-01310832v1
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Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Poster de conférence
hal-01312253v1
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Malices et fourberies des boîtes quantiques GaN/AlN.Poster de conférence hal-01312258v1 |
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Nonlinear optical absorption induced by high photo-excitation of group-III nitride based quantum wellsPoster de conférence hal-01312666v1 |
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Semiconductor plasmonics and metamaterials for IR applicationsSPIE Proceedings, 12002, SPIE, pp.1, 2022, ⟨10.1117/12.2612190⟩
Proceedings/Recueil des communications
hal-03914858v1
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Response to "Comment on 'Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition'" Appl. Phys. Lett. 87, 176101 (2005)2005, pp.87, 176102. ⟨10.1063/1.2117613⟩
Autre publication scientifique
hal-00540414v1
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Harnessing near-field thermal photons with efficient photovoltaic conversion2019
Pré-publication, Document de travail
hal-02409826v1
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Spin-Exchange Interaction in ZnO-based Quantum Wells2006
Pré-publication, Document de travail
hal-00021113v2
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