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129 résultats
Electrical characterization of advanced MIM capacitors with ZrO2 Insulator for high-density packaging and RF applicationsIEEE Transactions on Components, Packaging and Manufacturing Technology, 2012, pp.2 (2012) 502-509
Article dans une revue
hal-00777838v1
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“Keep on shrinking interconnect size: is it still the best solution ?”IEEE Int. Electronics Manufacturing Technology Conf., Nov 2010, Melaka, Malaysia
Communication dans un congrès
hal-01074798v1
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Benefit on Interconnect Performance of a Relaxed Wire Density in a 45 nm Node of the Back End of LineIEEE 14th Workshop on Signal Propagation on Interconnects, Germany. pp.9
Communication dans un congrès
lirmm-00485629v1
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Modélisation RLCG de lignes coplanaires sur un substrat Silicium pour applications CMOS15e Compatibilité Electromagnétique CEM 2010, Apr 2010, Limoges, France
Communication dans un congrès
hal-00604508v1
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Extraction de l'impédance caractéristique d'interconnexions16èmes Journées Nationales Microondes, May 2009, Grenoble, France
Communication dans un congrès
hal-00399912v1
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A Versatile Platform towards High Reliability Compact Package for Digital Chips2017 IEEE 67th Electronic Components and Technology Conference (ECTC), May 2017, Orlando, United States. pp.623-630, ⟨10.1109/ECTC.2017.331⟩
Communication dans un congrès
hal-02017756v1
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Fast and robust RF characterization method of insulators used in high speed interconnects networks2018 IEEE 22nd Workshop on Signal and Power Integrity (SPI), May 2018, Brest, France. pp.1-4, ⟨10.1109/SaPIW.2018.8401670⟩
Communication dans un congrès
hal-01988726v1
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Modélisation et caractérisation hyperfréquences de capacités 3D « Through Silicon Capacitors » pour le découplage des réseaux d’alimentation de circuits intégrés20èmes Journées Nationales Microondes JNM'17, May 2017, Saint-Malo, France
Communication dans un congrès
hal-01988731v1
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Extraction of Equivalent High Frequency Models for TSV and RDL Interconnects Embedded in Stacks of the 3D Integration Technology" Naples, Italy.IEEE Signal Propagation on Interconnects, May 2011, Naples, Italy
Communication dans un congrès
hal-01068872v1
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Effects of silicon substrate coupling phenomena on signal integrity for RF or high speed communications in 3D-IC.IEEE 62nd Electronic Components and Technology Conf.,, May 2012, San Diego, United States
Communication dans un congrès
hal-01062188v1
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High Frequency Characterization of Advanced MIM Capacitors Using SiN Dielectic LayersIEEE Transactions on Components and Packaging Technologies, 2008, 31 (3), pp.546 - 551
Article dans une revue
hal-00397514v1
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Evaluation of 3D Interconnect Routing and Stacking Strategy to Optimize High Speed Signal Transmission for Memory on Logic",IEEE 62nd Electronic Components and Technology Conf.,, May 2012, San Diego, United States
Communication dans un congrès
hal-01062192v1
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Modélisation haute fréquence de « Through Silicon Via » en fonction des matériaux, des architectures last et middle et des modes de transmission14èmes Journées de Caractérisation Microondes et Matériaux (JCMM'16), Mar 2016, Calais, France
Communication dans un congrès
hal-02003962v1
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Caractérisation très large bande des oxydes ZrO2 et TiTaO à permittivité élevée pour la réalisation de capacités MIM RF intégréesXVIIes Journées Nationales Microondes, 2011, Brest, France
Communication dans un congrès
hal-00650167v1
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Intercomparaisons de caractérisations électromagnétiques de couches minces ferroélectriques12èmes Journées de Caractérisation Microondes et Matériaux, Mar 2012, Chambéry, France. pp.Inconnu
Communication dans un congrès
hal-00734812v1
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Extraction entre 40 MHz et 67 GHz de la permittivité complexe du KTa0.65Nb0.3503 déposé en couche mince12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S1, papier ID52, 1-4
Communication dans un congrès
hal-00806607v1
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Characteristic impedance extraction of embedded and integrated interconnectsEuropean Physical Journal: Applied Physics, 2011, 53 (3), ⟨10.1051/epjap/2010100066⟩
Article dans une revue
hal-00672782v1
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Capacités MIM accordables pour circuits intégrés et caractérisation HF du SrTiO310èmes Journées de Caractérisation Microondes et Matériaux, Apr 2008, France, France
Communication dans un congrès
hal-00398487v1
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Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node18th Materials for Advanced Metallization Conf.,, Mar 2009, Grenoble, France
Communication dans un congrès
hal-00399048v1
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3D interconnect optimization for single channel 100-GBps transmission in a photonic interposer2017 IEEE 21st Workshop on Signal and Power Integrity (SPI), May 2017, Lake Maggiore, Italy. pp.1-4, ⟨10.1109/SaPIW.2017.7944026⟩
Communication dans un congrès
hal-01988728v1
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High frequency modeling of Through Silicon Capacitors (TSC) architectures in silicon interposer2016 IEEE 20th Workshop on Signal and Power Integrity (SPI), May 2016, Turin, Italy. pp.1-4, ⟨10.1109/SaPIW.2016.7496285⟩
Communication dans un congrès
hal-01992951v1
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Lateral Field Excitation of thickness shear modes in an AlN membraneIEEE International Frequency Control Symposium and European Frequency and Time Forum (IFCS 2011),, May 2011, San Francisco, United States
Communication dans un congrès
hal-01068868v1
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Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm nodeMicroelectronic Engineering, 2010, 87 (issue 3), pp.329-332
Article dans une revue
hal-01073580v1
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Electrical Performance Modeling of Unbalanced Comb Tree Networks on Advanced PCB Interconnects for High-Rate Clock Signal DistributionIEEE 63rd Electronic Components and Technology Conf., May 2013, Las Vegas, United States. pp.2024-2034
Communication dans un congrès
hal-01018036v1
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RF characterization of substrate coupling between TSV and MOS transistors in 3D integrated circuitsIEEE Int. Conf. on 3D System Integration (3DIC), Oct 2013, San Francisco, United States. pp.1-8
Communication dans un congrès
hal-01018442v1
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3D Integration of CMOS Image Sensor with Coprocessor Using TSV last and Micro-Bumps TechnologiesIEEE 63rd Electronic Components and Technology Conf., May 2013, Las Vegas, United States. pp.674-682
Communication dans un congrès
hal-01018405v1
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Wideband frequency and in-situ characterization of Aluminum Nitride (AlN) in a Metal/Insulator/Metal (MIM) configurationMaterials for Advanced Metallization, Mar 2010, Mechelen, Belgium
Communication dans un congrès
hal-00604324v1
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Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm nodeMicrowave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node, Mar 2009, Grenoble, France
Communication dans un congrès
hal-00602820v1
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Rise Time Reduction of High Speed Digital Signals on Interconnects of the CMOS 45 nm Node by Optimizing Interconnect Inductance"Rise Time Reduction of High Speed Digital Signals on Interconnects of the CMOS 45 nm Node by Optimizing Interconnect Inductance, Nov 2009, Belem, Brazil
Communication dans un congrès
hal-00602870v1
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High Frequency Characterization and Modeling of High Density TSV in 3D Integrated CircuitsHigh Frequency Characterization and Modeling of High Density TSV in 3D Integrated Circuits, May 2009, Strasbourg, France
Communication dans un congrès
hal-00602841v1
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