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Mechanical and Thermal Stresses Characterization Maps on Cross-sections of Forward Biased Electronic Power Devices

 Thierry Kociniewski , Zoubir Khatir
IRPS 2015 - IEEE International Reliability Physics Symposium, Apr 2015, Monterey, United States. 10p, ⟨10.1109/IRPS.2015.7112800⟩
Communication dans un congrès hal-01675290v1

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.%

 Christiane Dubois , Gilles Prudon , Jean-Claude Dupuy , Brice Gautier , Bruno Canut , et al.
Surface and Interface Analysis, 2011, 43 (1-2), pp.36-40
Article dans une revue hal-01965028v1

Temperature and strain mappings over forward biased power IGBT cross-section area by Œ-Raman spectroscopy

 Thierry Kociniewski , Zoubir Khatir
EPE'15 ECCE-Europe, 2015 17th European Conference on Power Electronics and Applications, Sep 2015, Geneve, Switzerland. 9p, ⟨10.1109/EPE.2015.7309315⟩
Communication dans un congrès hal-01675271v1

Temperature mapping by µ-Raman spectroscopy over cross-section area of power diode in forward biased conditions

 Thierry Kociniewski , Jeff Moussodji , Zoubir Khatir
Microelectronics Reliability, 2014, 55 (3), pp.547-551. ⟨10.1016/j.microrel.2014.12.007⟩
Article dans une revue hal-01675255v1

Micro-Raman spectroscopy for stress analysis in high power silicon devices

 Thierry Kociniewski , Jeff Moussodji , Zoubir Khatir
Microelectronics Reliability, 2014, 54 (10), pp. 1770-1773. ⟨10.1016/j.microrel.2014.07.149⟩
Article dans une revue hal-01319285v1

Top-metal ageing effects on electro-thermal distributions in an IGBT chip under short circuit conditions

 Jeff Moussodji , Thierry Kociniewski , Zoubir Khatir
European Conference on Power Electronics and Applications, Sep 2013, France. 9p
Communication dans un congrès hal-01056852v1
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HOMOEPITAXIE ET DOPAGE DE TYPE n DU DIAMANT

 Thierry Kociniewski
Matière Condensée [cond-mat]. Université de Versailles-Saint Quentin en Yvelines, 2006. Français. ⟨NNT : ⟩
Thèse tel-00349978v1
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Modélisation Electrothermique distribuée d'une puce IGBT : Application aux effets du vieillissement de la métallisation sur les régimes de court-circuit

 Jeff Moussodji Moussodji , Thierry Kociniewski , Zoubir Khatir
Symposium de Génie Électrique 2014, Jul 2014, Cachan, France
Communication dans un congrès hal-01065181v1
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Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance

 Youssef Metayrek , Thierry Kociniewski , Zoubir Khatir
Microelectronics Reliability, 2020, 114, ⟨10.1016/j.microrel.2020.113843⟩
Article dans une revue hal-03151313v1

New Investigation Possibilities on Forward Biased Power Devices using Cross-Sections

 Thierry Kociniewski , Jeff Moussodji , Zoubir Khatir , Mounira Berkani , Stéphane Lefebvre , et al.
IEEE Electron Device Letters, 2012, 33 (4), pp.576-578. ⟨10.1109/LED.2011.2182492⟩
Article dans une revue hal-00795342v1
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Quantitative analysis of electronic absorption of phosphorus donors in diamond

 I. Stenger , Marie-Amandine Pinault-Thaury , Alain Lusson , Thierry Kociniewski , François Jomard , et al.
Diamond and Related Materials, 2017, 74, pp.24-30. ⟨10.1016/j.diamond.2017.01.012⟩
Article dans une revue hal-02440909v1
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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

 Khalid Hoummada , Franck Dahlem , Thierry Kociniewski , Jacques Boulmer , Christiane Dubois , et al.
Applied Physics Letters, 2012, 101, pp.182602. ⟨10.1063/1.4760261⟩
Article dans une revue hal-00760773v1

Superconducting properties of laser annealed implanted Si:B epilayers

 Audrey Grockowiak , Thierry Klein , Etienne Bustarret , Jozef Kacmarcik , Christiane Dubois , et al.
Superconductor Science and Technology, 2013, 26, pp.045009. ⟨10.1088/0953-2048/26/4/045009⟩
Article dans une revue hal-00853455v1

Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers

 Franck Dahlem , Thierry Kociniewski , C. Marcenat , Audrey Grockowiak , Laëtitia Pascal , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (14), pp.140505. ⟨10.1103/PhysRevB.82.140505⟩
Article dans une revue hal-00735571v1
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