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Sylvie Schamm-Chardon

8

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519179

Identifiants chercheurs

sylvie-schamm-chardon
ResearcherId : A-2307-2015
0000-0001-5534-8475
IdRef : 143045121
ResearcherId : http://www.researcherid.com/rid/A-2307-2015

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Publications

712580

	Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics Sylvie Schamm-Chardon , Pierre-Eugène Coulon , L. Lamagna , C. Wiemer , S. Baldovino Microelectronic Engineering, 2011, 88 (4), pp.419-422. ⟨10.1016/j.mee.2010.10.012⟩ Article dans une revue hal-01745022v1
	Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001) C. Wiemer , S. Baldovino , L. Lamagna , M. Perego , Sylvie Schamm-Chardon Microelectronic Engineering, 2011, 88 (4), pp.415-418. ⟨10.1016/j.mee.2010.10.032⟩ Article dans une revue hal-01745019v1
	Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks C. Wiemer , L. Lamagna , S. Baldovino , M. Perego , Sylvie Schamm-Chardon Applied Physics Letters, 2010, 96 (18), pp.182901. ⟨10.1063/1.3400213⟩ Article dans une revue hal-01745025v1
	O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates L. Lamagna , C. Wiemer , M. Perego , S. N. Volkos , S. Baldovino Journal of Applied Physics, 2010, 108 (8), pp.084108. ⟨10.1063/1.3499258⟩ Article dans une revue hal-01745024v1
	Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks D. Tsoutsou , L. Lamagna , S. N. Volkos , A. Molle , S. Baldovino Applied Physics Letters, 2009, 94 (5), pp.53504 - 53504. ⟨10.1063/1.3075609⟩ Article dans une revue hal-01745031v1
	Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100) L. Lamagna , C. Wiemer , S. Baldovino , A. Molle , M. Perego Applied Physics Letters, 2009, 95 (12), pp.122902. ⟨10.1063/1.3227669⟩ Article dans une revue hal-01745026v1
	Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks Sylvie Schamm-Chardon , Pierre-Eugène Coulon , S. Miao , S. N. Volkos , L. H. Lu Journal of The Electrochemical Society, 2009, 156 (1), pp.H1-H6. ⟨10.1149/1.3000594⟩ Article dans une revue hal-01745032v1
	Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing D. Tsoutsou , G. Scarel , A. Debernardi , S. C. Capelli , S. N. Volkos Microelectronic Engineering, 2008, 85 (12), pp.2411-2413. ⟨10.1016/j.mee.2008.09.033⟩ Article dans une revue hal-01745039v1