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Conception de filtres en technologie 2.5 D en bande millimétrique

 Gaëtan Prigent , Eric Rius , Henri Happy , Karine Blary , Sylvie Lepilliet
Workshop du Réseau des Grandes Centrales Technologiques pour la Recherche Technologique de Base (RTB), 2004, Paris, France
Communication dans un congrès hal-00247952v1
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Design of tunable power detector towards 5G applications

 Issa Alaji , Walid Aouimeur , Haitham Ghanem , Etienne Okada , Sylvie Lepilliet , et al.
Microwave and Optical Technology Letters, 2021, 63 (3), pp.823-828. ⟨10.1002/mop.32685⟩
Article dans une revue hal-03135959v1

On wafer silicon integrated noise source characterization up to 110 GHz based on germanium-on-silicon photodiode

 Sandrine Oeuvrard , Jean-Francois Lampin , Guillaume Ducournau , Sylvie Lepilliet , Francois Danneville , et al.
27th IEEE International Conference on Microelectronic Test Structures, ICMTS 2014, 2014, Udine, Italy. pp.150-154, ⟨10.1109/ICMTS.2014.6841484⟩
Communication dans un congrès hal-01055046v1

80 GHz low noise amplifiers in 65 nm CMOS SOI

 B. Martineau , A. Cathelin , Francois Danneville , A. Kaiser , Gilles Dambrine , et al.
33rd European Solid-State Circuits Conference, ESSCIRC2007, 2007, Germany. pp.348-351, ⟨10.1109/ESSCIRC.2007.4430315⟩
Communication dans un congrès hal-00284027v1

Improved characterization methology for MOSFETs up to 220 GHz

 N. Waldhoff , C. Andrei , D. Gloria , Sylvie Lepilliet , Francois Danneville , et al.
IEEE Transactions on Microwave Theory and Techniques, 2009, 57, pp.1237-1243. ⟨10.1109/TMTT.2009.2017359⟩
Article dans une revue hal-00471808v1

Millimeter wave design with 65 nm LP SOI HR CMOS technology

 B. Martineau , S. Douyere , A. Cathelin , Francois Danneville , C. Raynaud , et al.
IEEE International SOI Conference, 2007, United States. pp.123-124, ⟨10.1109/SOI.2007.4357883⟩
Communication dans un congrès hal-00284028v1

300-GHz intermodulation/noise characterization enabled by a single THz photonics source

 H. Ghanem , Sylvie Lepilliet , Francois Danneville , Guillaume Ducournau
IEEE Microwave and Wireless Components Letters, 2020, 30 (10), pp.1013-1016. ⟨10.1109/LMWC.2020.3020817⟩
Article dans une revue hal-03272137v1

Analog/RF performance of multichannel SOI MOSFET

 T.C. Lim , E. Bernard , O. Rozeau , T. Ernst , B. Guillaumot , et al.
IEEE Transactions on Electron Devices, 2009, 56, pp.1473-1482. ⟨10.1109/TED.2009.2021438⟩
Article dans une revue hal-00469684v1

Design and characterization of a millimeter-long travelling wave THz photomixer

 Fuanki Bavedila , Charbel Tannoury , Vincent Magnin , Sylvie Lepilliet , Vanessa Avramovic , et al.
SPIE Photonics West Opto, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII, Feb 2020, San Francisco (CA), United States
Communication dans un congrès hal-04444318v1
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f max =800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

 M. Samnouni , Nicolas Wichmann , X. Wallart , Christophe Coinon , Sylvie Lepilliet , et al.
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873821⟩
Communication dans un congrès hal-03066235v1

0.12 µm gate length InAlAs/InGaAs HEMTs on transferred substrate

 S. Bollaert , X. Wallart , Sylvie Lepilliet , A. Cappy , E. Jalaguier , et al.
2001, pp.171-174
Communication dans un congrès hal-00151762v1
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Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

 Abdelhalim Saadi , Marc Margalef‐rovira , Youcef Amara , Loïc Vincent , Sylvie Lepilliet , et al.
IET Microwaves Antennas and Propagation, 2022, 16, pp 477-488. ⟨10.1049/mia2.12260⟩
Article dans une revue hal-03666401v1

A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm

 Alice Bossuet , Thomas Quémerais , Christophe Gaquière , Estelle Lauga-Larroze , Jean-Michel Fournier , et al.
IEEE Microwave and Wireless Components Letters, 2016, 26 (11), pp.930-932. ⟨10.1109/LMWC.2016.2614969⟩
Article dans une revue hal-02011282v1

A D-Band Passive Receiver with 10 dB Noise Figure for In-situ Noise Characterization in BiCMOS 55 nm

 Simon Bouvot , Thomas Quemerais , Joao Carlos Azevedo Goncalves , Sylvie Lepilliet , Guillaume Ducournau , et al.
IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, United States. ⟨10.1109/SIRF.2017.7874385⟩
Communication dans un congrès hal-03272697v1

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

 M. Deng , Sylvie Lepilliet , Francois Danneville , Gilles Dambrine , D. Gloria , et al.
8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391
Communication dans un congrès hal-00922492v1

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

 Gilles Dambrine , Daniel Gloria , Patrick Scheerer , Christine Raynaud , Francois Danneville , et al.
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100
Communication dans un congrès hal-00125303v1

Kit d'étalonnage TRL pour la caractérisation sub-mmWave sous pointes de InP-HEMT

 R. Younes , Nicolas Wichmann , Sylvie Lepilliet , Guillaume Ducournau , S. Bollaert
XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France
Communication dans un congrès hal-03702659v1

Design of wide-band branch-line coupler in the G-frequency band

 Gaëtan Prigent , Eric Rius , Karine Blary , Henri Happy , Sylvie Lepilliet
IEEE MTT-S International Microwave Symposium Digest, Jun 2006, San Francisco, CA, United States. pp.WE4F-5, ⟨10.1109/MWSYM.2006.249905⟩
Communication dans un congrès hal-00126799v1

Méthode de conception de filtres planaires en bande G

 Gaëtan Prigent , Eric Rius , Henri Happy , Karine Blary , Sylvie Lepilliet
Actes des 14èmes Journées Nationales Microondes, May 2005, Nantes, France
Communication dans un congrès hal-00127057v1

fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate

 S. Bollaert , Y. Cordier , M. Zaknoune , T. Parenty , H. Happy , et al.
Electronics Letters, 2002, 38, pp.389-391
Article dans une revue hal-00147831v1

Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers

 Jean-Claude de Jaeger , S.L. Delage , Gilles Dambrine , M.A. Poisson , Virginie Hoel , et al.
2005, pp.229-232
Communication dans un congrès hal-00126458v1
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Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor

 Emilien Peytavit , Sylvie Lepilliet , Francis Hindle , Christophe Coinon , Tahsin Akalin , et al.
Applied Physics Letters, 2011, 99, pp.223508-1-3. ⟨10.1063/1.3664635⟩
Article dans une revue hal-00783534v1

Graphene nanotransistors for RF charge detection

 E. Pallecchi , Q. Wilmart , A.C. Betz , S.H. Jhang , G. Fève , et al.
Journal of Physics D: Applied Physics, 2014, 47, 094004, 5 p. ⟨10.1088/0022-3727/47/9/094004⟩
Article dans une revue hal-00946703v1

Tuner intégré large bande en gamme de fréquences millimétriques pour la caractérisation en technologie BiCMOS 55 nm

 Caroline Maye , Marc Margalef-Rovira , Issa Alaji , Sylvie Lepilliet , D. Gloria , et al.
XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France
Communication dans un congrès hal-03702577v1

Low‐loss broadband (DC to 220 GHz) S‐CPW to S‐CPS transition for S‐CPS coplanar probing

 Abdelhalim Saadi , Marc Margalef-Rovira , L. Vincent , Sylvie Lepilliet , Christophe Gaquière , et al.
Electronics Letters, 2019, 55 (21), pp.1137-1139. ⟨10.1049/el.2019.2377⟩
Article dans une revue hal-03133346v1

A 135-150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology

 Alice Bossuet , Thomas Quémerais , Sylvie Lepilliet , Jean-Michel Fournier , Estelle Lauga-Larroze , et al.
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, Oct 2015, Boston, United States. pp.186-189
Communication dans un congrès hal-02012856v1

A G band frequency quadrupler in 55 nm BiCMOS for bist applications

 Walid Aouimeur , Estelle Lauga-Larroze , Jean-Daniel Arnould , José Moron Guerra , Christophe Gaquière , et al.
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), Apr 2017, Graz, Austria. pp.1-4, ⟨10.1109/INMMIC.2017.7927310⟩
Communication dans un congrès hal-02012681v1

A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm

 Simon Bouvot , Joao Carlos Azevedo Goncalves , Alice Bossuet , Thomas Quemerais , Sylvie Lepilliet , et al.
IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Aug 2017, Seoul, South Korea. paper FR_3B_4, ⟨10.1109/RFIT.2017.8048233⟩
Communication dans un congrès hal-03272701v1
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Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

 A. Lecavelier Des Etangs-Levallois , Marie Lesecq , Francois Danneville , Y. Tagro , Sylvie Lepilliet , et al.
Solid-State Electronics, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩
Article dans une revue istex hal-00914203v1

A compact low noise amplifier in SiGe:C BiCMOS technology for 40 GHz wireless communications

 S. Pruvost , I. Telliez , Francois Danneville , A. Chantre , P. Chevalier , et al.
2005, pp.565-568
Communication dans un congrès hal-00125166v1
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