Sylvie Contreras
100
Documents
Publications
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Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximitéID en action !, Mission pour les initiatives transverses et interdisciplinaires du CNRS (MITI), Nov 2022, Paris, France
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Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France
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Sublimation de carbure de silicium : de la couche tampon à la monocouche de graphèneCongrès annuel SFEC, Apr 2020, Samatan, France
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Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001)GDR-I Graphene and co Annual meeting 2018, Oct 2018, Sète, France
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High Temperature Annealing of MBE-grown Mg-doped GaN33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩
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Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressureGDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France
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Optical investigations and strain effect in AlGaN/GaN epitaxial layers33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩
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Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275
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Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79
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Electrical transport properties of p-type 4H-SiCE-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩
Communication dans un congrès
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Non-trivial Berry phase in the Cd3As2 3D Dirac semimetalEDISON 19, Jun 2015, Salamanca, Spain. ⟨10.1088/1742-6596/647/1/012064⟩
Communication dans un congrès
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩
Communication dans un congrès
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p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with AluminumICSCRM, Oct 2015, Giardini Naxos, France. pp.137 - 142, ⟨10.4028/www.scientific.net/MSF.858.137⟩
Communication dans un congrès
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Raman spectroscopy as a tool to study the doping of grapheneNanospain Conference 2014, Mar 2014, Spain
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La spectrométrie Raman comme outil pour l'étude du dopage du graphèneMatériaux 2014, Nov 2014, Montpellier, France
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Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.717 - 720, ⟨10.4028/www.scientific.net/MSF.821-823.717⟩
Communication dans un congrès
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Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP), Jun 2014, Santa Fe, United States. pp.76-80, ⟨10.1016/j.infrared.2014.09.036⟩
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Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVDHETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩
Communication dans un congrès
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P3 : un outil pour la formation à la gestion et au pilotage d'ateliers de productionVII° colloque 'Questions de Pédagogies dans l'Enseignement Supérieur' (QPES'13), 2013, Sherbrooke, Unknown Region
Communication dans un congrès
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Reversible Optical Doping of grapheneGDR-I GNT 2013, Apr 2013, Guidel-Plages, Lorient, France
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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS TransportHeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩
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Reversible Optical Doping of grapheneImagineNano/Nanospain 2013, Apr 2013, Bilbao, Spain
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Changes induced by doping on the Raman spectrum of monolayer and bilayer grapheneAdvances and Applications in Carbon Related nanomaterials: From pure to doping including heteroatom, Sep 2013, Castelldefels, Spain
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Raman investigation of aluminum-doped 4H-SiCECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩
Communication dans un congrès
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Mobility spectrum analysis on AlGaN/AlN/GaN heterostructures grown on Fe-doped GaN templatesEXMATEC 2012, May 2012, Ile de Porquerolles, France
Communication dans un congrès
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Pressure studies of multicarrier conduction in undoped InN grown on GaN bufferHPSP 2012, Jul 2012, Montpellier, France. pp.746 - 749, ⟨10.1002/pssb.201200508⟩
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Genomic and EST microsatellite loci development and use in olive: molecular tools for genetic mapping and association studies7. International Symposium on Olive Growing, International Society for Horticultural Science (ISHS). Leuven, INT., Sep 2012, San Julian, Argentina. 736 p
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Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩
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Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin PhotodiodeConference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, FL, United States. pp.801213, ⟨10.1117/12.882133⟩
Communication dans un congrès
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Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device ApplicationsHeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩
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Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.Conference On Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco (CA), France. pp.76081U
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Propriétés électriques de photodiodes infrarouges à superréseaux InAs/GaSbXIIIème Journées Nationales Microélectronique Optoélectronique (JNMO), 2010, Les Issambres, France
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Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiodeExmatec Conference, 2010, Darmstadt, Germany
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Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16), Aug 2009, Montpellier (FRANCE), France. pp.012030
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Zero-thermal drift quantum Well Hall SensorProceeding Eurosensors XXII, Sep 2008, Dresden, Germany
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Electrical transport phenomena in magnesium-doped p-type GaN13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.658-663
Communication dans un congrès
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Effect of pressure on electrical properties of short period InAs/GaSb superlattice13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647
Communication dans un congrès
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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4
Communication dans un congrès
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Pressure characterization of AlGaN/GaN Hall sensors13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil
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Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependenceProceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
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Top injection and side injection to a buried 2DEG : beyond the Murrmann-Berger modelProceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
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Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT methodInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636
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Impact of annealing temperature ramps on the electrical activation of N+ and P+ co-implanted SiC layersInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.795-798
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Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120
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Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.401-404
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High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443
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Innovative pressure and Hall sensors based on semiconductor compoundsESTEC, 4th Round Table on Micro/Nano Technologies for Space, May 2003, Noordwijk, Netherlands
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From Transport Measurements to Infrared Reflectance Spectra of n-type Doped 4H-SiC Layer StacksEuropean Conference on Silicon Carbide and Related Materials (ECSCRM2002), Sep 2002, Linköping, Sweden. pp.403-406
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High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), Aug 2002, GUILDFORD (ENGLAND), France. pp.232-237
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Process-induced strain in silicon-on-insulator materialsConference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416
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Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOIInternational Conference on Silicon and Carbide and Related Materials 2001 (9th) (ICSCRM2001), Oct 2001, Tsukuba, Japan. pp.343-346
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4H-SiC material for Hall effect and high-temperature sensors working in harsh environmentsInternational Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438
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A novel selectively delta-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructureSpring Conference of the E-MRS/IUMRS/ICEM, May 2000, Strasbourg, France. pp.299-303, ⟨10.1016/S0925-3467(01)00095-7⟩
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Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.725-728
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Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates1062, pp.59-63, 2022, ⟨10.4028/p-1ak21z⟩
Proceedings/Recueil des communications
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