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Sylvain Tricot
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Documents
Identifiants chercheurs
- sylvain-tricot
- 0000-0002-8863-2162
- IdRef : 132073986
Présentation
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Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive PropertiesAdvanced Science, 2022, 9 (2), pp.2101661. ⟨10.1002/advs.202101661⟩
Article dans une revue
hal-03426793v1
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Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applicationsProceedings of SPIE, the International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
Article dans une revue
hal-00842763v1
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Electronic, optical and structural properties of (In,Ga)As/GaP quantum dotsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86, pp.205316. ⟨10.1103/PhysRevB.86.205316⟩
Article dans une revue
hal-00726726v1
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III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production21st International Conference on Molecular Beam Epitaxy (IC-MBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03392254v1
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Robust 2D semimetallic inclusions boost performances of III-V/Si heterostructures for water-splitting17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
Communication dans un congrès
hal-03402743v1
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III-V/Si photoelectrodes with ambipolar properties5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France
Communication dans un congrès
hal-03408282v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
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Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918669v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918734v1
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Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France
Communication dans un congrès
hal-00918787v1
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Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening processinternational conference on MBE, 2012, Nara, Japan
Communication dans un congrès
hal-00726776v1
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Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France
Communication dans un congrès
hal-00788434v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
hal-00726861v1
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(In,Ga)As/GaP quantum dots for monolithic integration on silicon31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland
Communication dans un congrès
hal-00726878v1
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Unusual C2 symmetry properties of (In,Ga)As/GaP quantum dots morphologyinternational conference on superlattice, nanostructures and nanodevices (ICSNN), 2012, Dresden, Germany
Communication dans un congrès
hal-00726864v1
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Single InAs quantum dots morphology and local electronic properties on (113)B InP substrateeuro-MBE, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
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Single InAs/InP quantum dashes and dots morphology on (001) and (113)B substratesJournées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France
Communication dans un congrès
hal-00654323v1
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Using in-plane built-in electric fields and electrical shunts of antiphase boundaries for III-V/Si solar harvesting devices21st EuroMBE Workshop, Apr 2023, Madrid, Spain. 2023
Poster de conférence
hal-04225037v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Poster de conférence
hal-00918662v1
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