SL
Sylvain LE GALL
116
Documents
Présentation
Dr. Sylvain Le Gall,
Assciate Professor, Univ. **Paris-Sud** (Département de Physique, UFR Sciences)
Laboratoire **GeePs** , (pôle PHEMADIC)
11 Rue Joliot Curie, 91190 Gif sur Yvette
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Nanoparticles on p-type Silicon as Catalysts for the Photoelectrochemical CO2 Conversion. 73 rd Annual Meeting of the International Society of Electrochemistry, Sep 2022, Online, France
Communication dans un congrès
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Direct-synthesis of AgxCu100-x bimetallic nanoparticles on p-Si supports for the photoelectrochemical reduction of CO2Spring Meeting EMRS, Jun 2022, Warsaw, Poland
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Development and simulated environment testing of β-(Al)Ga2O3-based photodetectors for space-based observation of the Herzberg continuumSensors, Systems, and Next-Generation Satellites XXV. Proceedings SPIE 11858, Sep 2021, Online, Spain. pp.1185813, ⟨10.1117/12.2603565⟩
Communication dans un congrès
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Investigation of defects in structures based on BP/Si heterojunctionE-MRS Spring Meeting 2021, May 2021, Strasbourg, France
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Defect densities analysis in thin (i) a-Si:H passivation layer inserted in a-Si:H/c-Si heterojunction solar cells using coplanar conductance measurements : a temperature dependence study37th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2020), Sep 2020, Lisbon, Portugal
Communication dans un congrès
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Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France
Communication dans un congrès
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Silicon Band Engineering with 2D materials8th NIMS-UR1-CNRS-SG Workshop, Nov 2019, Tsukuba, Japan
Communication dans un congrès
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Capacitance-Voltage Characterization Technique Adapted to Tandem Solar Cell36th European Photovoltaic Solar Energy Conference and Exhibition, WIP, Sep 2019, Marseille, France. pp.638, ⟨10.4229/EUPVSEC20192019-3CO.8.3⟩
Communication dans un congrès
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Tuning the Schottky barrier height at metal/solid 2D/Si heterostructureNanotech Paris, Jun 2019, Issy-les-Moulineaux, France
Communication dans un congrès
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Defects in the passivating buffer (i) a-Si:H layer of a-Si:H/c-Si heterojunction solar cellsJNPV 2019, Dec 2019, Dourdan, France
Communication dans un congrès
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Determination of Effective Defects States by Varying the Thickness of Passivating (i)a-Si:H Layer in a-Si :H/c-Si Heterojunction Solar Cell Using Coplanar Conductance28th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 28), Aug 2019, Palaiseau, France
Communication dans un congrès
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[Invited] 3D patterning of Si by contact etchning: contribution of the band bending modelingSemi-Conducteurs et Oxydes Poreux, 5ème journée (SCOPE 2019), Jun 2019, Thiais, France
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Recent progress on the amorphous silicon/crystalline silicon interface20th ISCMP School and Conference, Sep 2018, Varna, Bulgaria
Communication dans un congrès
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Local open-circuit voltage characterization of thin-film radial junction PIN solar cells by Kelvin Probe Force MicroscopyMRS Spring Meeting 2018, Apr 2018, Phoenix, United States
Communication dans un congrès
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Interface properties of GaP/Si heterojunction fabricated by PE-ALDEMRS Spring Meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
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3D patterning of silicon with nanoporous goldPorous Semiconductors - Science and Technology Conference, Mar 2018, La Grande Motte, France
Communication dans un congrès
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Modulated photocurrent and photoluminescence for the characterization of silicon heterojunctions: experiments and simulationEMRS Spring Meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
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Application de la technique de caractérisation Capacité-Tension à l’étude des cellules tandemJournées Nationales du PhotoVoltaïque (JNPV) 2018, Dec 2018, Dourdan, France
Communication dans un congrès
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Zn(Sn,Ge)N2 : a new double nitride tunable semiconductor family for LED and solar devicesJournées Nationales du PhotoVoltaïque (JNPV 2018), Fédération de recherche du PhotoVoltaïque (FedPV), Dec 2018, Dourdan, France
Communication dans un congrès
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Characterization of GaP/Si heterojunctions by space charge capacitance measurementsE-MRS 2017 Spring Meeting, May 2017, Strasbourg, France
Communication dans un congrès
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Capacitance characterization of GaP/n-Si structures grown by PE-ALD4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint-Petersburg OPEN 2017), Apr 2017, Saint-Petersbourg, France. pp.052027, ⟨10.1088/1742-6596/917/5/052027⟩
Communication dans un congrès
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Low temperature plasma enhanced atomic layer deposition of GaP films on Si substratesICANS27, The 27th International Conference on Amorphous and Nanocrystalline Semiconductors, Aug 2017, Seoul, South Korea
Communication dans un congrès
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Microstructuration of Silicon Surfaces Using Nanoporous Gold Electrodes21st Topical Meeting of the International Society of Electrochemistry, ISE, Apr 2017, Szeged, Hungary. pp.31375 - 31375
Communication dans un congrès
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Prospective analysis of optoelectronic properties of ZnSnN2 for future tandem solar cells7e Journées Nationales du Photovoltaïque 2017, Fédération de recherche du Photovoltaïque, Dec 2017, Dourdan, France
Communication dans un congrès
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Si doped n-type GaP layers grown on Si wafers by low-temperature PE-ALDPhotovoltaic Technical Conference, PVTC 2017, May 2017, Marseille, France
Communication dans un congrès
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Influence of electrical transport properties on performance of Si nanowire array solar cells assessed by optoelectrical modelingE-MRS 2017 Spring Meeting, May 2017, Strasbourg, France
Communication dans un congrès
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Gravure par contact du silicium à l’aide d’électrodes en or nanoporeuxSemiconduteur et oxyde poreux (SCOPE 2017), Jun 2017, Lille, France
Communication dans un congrès
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Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applications2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), IEEE, Jun 2017, Washington, United States. ⟨10.1109/pvsc.2017.8366525⟩
Communication dans un congrès
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Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching11th INTERNATIONAL CONFERENCE ON SURFACE COATINGS AND NANOSTRUTURED MATERIALS (NANOSMAT), Sep 2016, Aveiro, Portugal
Communication dans un congrès
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Tunable Nanostructuration of Si by MACE with Pt nanoparticles under an applied external bias10th Conference of Porous Semiconductor Science and Technology (PSST) , Mar 2016, Tarragone, Spain
Communication dans un congrès
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Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etchingE-MRS fall meeting 2016, Materials Research Society, Sep 2016, Varsovie, Poland
Communication dans un congrès
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Thermally activated domain wall motion in [Co/Ni](111) superlattices with perpendicular magnetic anisotropyINTERMAG 2015, May 2015, Beijing, China. pp.14419 - 57002, ⟨10.1109/INTMAG.2015.7156512⟩
Communication dans un congrès
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Simulation électrique et optique de nanofils de Silicium en géométrie radiale pour des applications photovoltaïquesJournées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France
Communication dans un congrès
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Spin transfer torque on domain wall state in nanopillar magnetic tunnel junction with perpendicular magnetic anisotropyInternational French-US Workshop: "Toward low power spintronic devices", Jul 2013, San Diego, CA, United States
Communication dans un congrès
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Etude de l'effet de transfert de Spin dans des jonctions tunnel magnétiques en géométrie nanoringColloque Louis Néel, 15th, Mar 2013, Tours, France
Communication dans un congrès
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BEEM as a local probe of electronic properties at buried interfaces: band structure effects in the epitaxial Au(110)/GaAs(001) Schottky contact13th ICFSI, 2011, Prague, Czech Republic
Communication dans un congrès
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Etude des états de défauts à l'interface MgO/GaAs(001)24èmes Journées Surfaces et Interfaces, 2010, Nantes, France
Communication dans un congrès
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Preliminary study of the growth of MgO on Si(001) by x-ray photoelectron spectroscopyInternational Workshop and Winter School: Photoemission, 2010, Dijon, France
Communication dans un congrès
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Transverse-momentum selection rules for ballistic electrons at epitaxial metal/GaAs(001) interfaces24èmes Journées Surfaces et Interfaces, 2010, Nantes, France
Communication dans un congrès
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Study of MgO/GaAs(001) contacts for spin injection/detection in n-type unipolar devicesMaterials Research Society (MRS) Spring Meeting, Materials Research Society, Apr 2009, San Fransisco, France
Communication dans un congrès
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Microscopie à émission d'électrons balistiques (BEEM) : Etude des propriétés électroniques locales de barrières tunnel de MgO12eme Colloque Louis Néel, 2008, La Grande Motte, France
Communication dans un congrès
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Microscopie à émission d'électrons balistiques (BEEM) : Imagerie et Spectroscopie d'interfaces avec une résolution nanométrique2èmes Journées Nanosciences de Bretagne, 2008, Nantes, France
Communication dans un congrès
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Local electronic properties of MgO tunnel barrier studied by Ballistic Electron Emission Microscopy (BEEM)European Conference On Surface Science, 2008, Liverpool, United Kingdom
Communication dans un congrès
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