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Impact ionization and band-to-band tunneling in In x Ga 1-x As PIN ungated devices: A Monte Carlo analysis
B. Vasallo
,
T. Gonzalez
,
V. Talbo
,
Y. Lechaux
,
Nicolas Wichmann
,
et al.
Article dans une revue
hal-02115681v1
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The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter
S. Bollaert
,
Y. Cordier
,
M. Zaknoune
,
H. Happy
,
Virginie Hoel
,
et al.
Solid-State Electronics, 2000, 44, pp.1021-1027
Article dans une revue
hal-00157879v1
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Noise optimization of ultra-short gate HEMTs using Monte Carlo simulation
J. Mateos
,
T. Gonzales
,
D. Pardo
,
S. Bollaert
,
T. Parenty
,
et al.
2001, pp.245-248
Communication dans un congrès
hal-00151775v1
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70nm gate InP-based HEMTs with high ft and fmax
T. Parenty
,
S. Bollaert
,
J. Mateos
,
X. Wallart
,
A. Cappy
11th European Heterostructure Technology Workshop, HETECH 01, 2001, Padova, Italy
Communication dans un congrès
hal-00151776v1
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Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions
I. Iniguez de La Torre
,
T. Gonzalez
,
D. Pardo
,
C. Gardes
,
Yannick Roelens
,
et al.
Article dans une revue
hal-00471809v1
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Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
N. Dyakonova
,
J. Lusakowski
,
W. Knap
,
M. Levinshtein
,
M. S. Shur
,
et al.
Journal of Applied Physics, 2005, 97, pp.114313-1-5
Article dans une revue
hal-00125161v1
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HEMT structures on GaAs or InP substrates for millimeter wave power amplification
Didier Theron
,
Yvon Cordier
,
X. Wallart
,
S. Bollaert
,
Mohammed Zaknoune
,
et al.
24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece
Communication dans un congrès
hal-00159030v1
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Ballistic GaInAs/AlInAs devices technology and characterization at room temperature
J.S. Galloo
,
Yannick Roelens
,
S. Bollaert
,
Emmanuelle Pichonat
,
X. Wallart
,
et al.
Communication dans un congrès
hal-00133881v1
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Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates
G. Moschetti
,
H. Zhao
,
P.A. Nilsson
,
S. Wang
,
A. Kalabukhov
,
et al.
35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18
Communication dans un congrès
hal-00799700v1
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Terahertz emission and noise spectra in HEMTs
J. Mateos
,
S. Perez
,
D. Pardo
,
T. Gonzalez
,
J. Lusakowski
,
et al.
Terahertz emission and noise spectra in HEMTs, L. Reggiani, 2005, Lecce, Italy. pp.423-430, ⟨10.1063/1.2138647⟩
Communication dans un congrès
hal-00154897v1
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Nanoscaled double Y-Branch junction operating as room temperature RF to DC rectifier
Lukasz Bednarz
,
R. Rashmi
,
Benoit Hackens
,
Hervé Boutry
,
Vincent Bayot
,
et al.
Communication dans un congrès
hal-00133899v1
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Frequency response of T-shaped three branch junctions as mixers and detectors
I. Iniguez de La Torre
,
T. Gonzalez
,
D. Pardo
,
C. Gardes
,
Yannick Roelens
,
et al.
Communication dans un congrès
hal-00474095v1
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Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content
Y. Cordier
,
M. Zaknoune
,
S. Bollaert
,
A. Cappy
2000, pp.102-105
Communication dans un congrès
hal-00159005v1
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InAlAs/InGaAs double gate HEMTS with high extrinsic transconductance
Nicolas Wichmann
,
I. Duszynski
,
T. Parenty
,
S. Bollaert
,
J. Mateos
,
et al.
2004, pp.295-298
Communication dans un congrès
hal-00133877v1
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Imaging the electron local density of states inside buried semiconductor quantum rings
B. Hackens
,
F. Martins
,
M.G. Pala
,
H. Sellier
,
T. Ouisse
,
et al.
29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008, Jul 2008, Rio de Janeiro, Brazil
Communication dans un congrès
hal-00392551v1
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Dwell-time-limited coherence in open quantum dots
B. Hackens
,
S. Faniel
,
C. Gustin
,
X. Wallart
,
S. Bollaert
,
et al.
Physical Review Letters, 2005, 94, pp.146802-1-4
Article dans une revue
hal-00125163v1
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Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation
Minghua Shi
,
J. Saint-Martin
,
A. Bournel
,
D. Querlioz
,
P. Dollfus
,
et al.
Communication dans un congrès
hal-00799795v1
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Low-IQ : MMIC ultra faible consommation cryogénique et ambiant pour télécommunications spatiales en bande Q
S. Bollaert
,
Francois Danneville
,
Yannick Roelens
,
L. Desplanque
,
Cyrille Gardes
,
et al.
Les Rencontres du Numérique, 2013, Paris, France
Communication dans un congrès
hal-00974542v1
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Sb-HEMT : toward 100-mV cryogenics electronics
A. Noudewiva
,
Yannick Roelens
,
Francois Danneville
,
A. Olivier
,
Nicolas Wichmann
,
et al.
Article dans une revue
hal-00548570v1
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Long dephasing time and high temperature ballistic transport in an InGaAs quantum dot
Benoit Hackens
,
Sébastien Faniel
,
François Delfosse
,
Cédric Gustin
,
Hervé Boutry
,
et al.
Article dans une revue
hal-00145986v1
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Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot
Yannick Roelens
,
Benoit Hackens
,
Sébastien Faniel
,
Cédric Gustin
,
Hervé Boutry
,
et al.
International Conference on Superlattices Nano-structures and Nano-devices, ICSNN-02, Jul 2002, Toulouse, France
Communication dans un congrès
hal-00147857v1
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Room temperature nonlinear transport in InGaAs/InAlAs based ballistic nanodevices
Javier Mateos
,
B.G. Vasallo
,
Daniel Pardo
,
Tomás González
,
Hervé Boutry
,
et al.
International Conference onIndium Phosphide and Related Materials, May 2003, Barbara, CA, France. pp.484-487
Communication dans un congrès
hal-00145996v1
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Les structures métamorphiques AlInAs/GaInAs sur substrat GaAs : croissance et applications
Yvon Cordier
,
Mohammed Zaknoune
,
S. Bollaert
,
Mustafa Boudrissa
,
E. Lefebvre
,
et al.
20ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2001, 2001, St Aygulf, France
Communication dans un congrès
hal-00152677v1
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Réalisation de transistors InAlAs/InGaAs sur substrats reportés
I. Duszynski
,
Nicolas Wichmann
,
S. Bollaert
,
X. Wallart
,
Sylvie Lepilliet
,
et al.
Actes des 9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, St Aygulf, France
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hal-00147827v1
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0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer
S. Bollaert
,
X. Wallart
,
Sylvie Lepilliet
,
A. Cappy
,
E. Jalaguier
,
et al.
Article dans une revue
hal-00147840v1
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Design optimisation of ultra-short gate HEMTs using Monte Carlo simulation
J. Mateos-Lopez
,
T. Gonzalez
,
D. Pardo
,
Virginie Hoel
,
S. Bollaert
,
et al.
2000, pp.624-627
Communication dans un congrès
hal-00157877v1
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HEMTs AlSb/InAs pour applications ultra faible consommation
S. Bollaert
,
A. Olivier
,
Yannick Roelens
,
N. Wichmannn
,
A. Shchepetov
,
et al.
12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, 2008, St Pierre d'Oléron, France
Communication dans un congrès
hal-00361523v1
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Plasma wave transistors for THz detection and emission
S. Bollaert
European Microwave Week, Workshop ‘From THz devices to systems : Design, Modeling, Processes and Characterization', 2007, Munich, Germany
Communication dans un congrès
hal-00286246v1
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Terahertz emission and detection by plasma waves in nanoscale transistors
F. Teppe
,
J. Lusakowski
,
N. Dyakonova
,
Y.M. Meziani
,
W. Knap
,
et al.
2005, pp.1523-1524
Communication dans un congrès
hal-00154898v1
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Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
J. Lusakowski
,
F. Teppe
,
N. Dyakonova
,
Y.M. Meziani
,
W. Knap
,
et al.
physica status solidi (a), 2005, 202, pp.656-659
Article dans une revue
hal-00154893v1
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