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30 résultats
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triés par
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Etude par microscopie à effet tunnel de la croissance épitaxiale de GaP sur substrats Si(001) nominaux et vicinaux pour l’optoélectroniqueRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
Poster de conférence
hal-01497147v1
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GaP Template on Si for Solar Water Splitting: surface energy engineeringnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
Communication dans un congrès
hal-01909068v1
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Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applicationsEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Poster de conférence
hal-01497071v1
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A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Communication dans un congrès
hal-01910554v1
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PhD in progress :Caractérisations avancées des propriétés électroniques et structurales de matériaux III - V intégrés sur silicium [Defense : cancelled]2015
Pré-publication, Document de travail
hal-02293763v1
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy31è colloque Journées Surfaces et Interfaces (JSI 2017), Jan 2017, Rennes, France
Poster de conférence
hal-01715988v1
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Zinc-blende group III-V/group IV epitaxy: Importance of the miscutPhysical Review Materials, 2020, 4 (5), pp.053401. ⟨10.1103/PhysRevMaterials.4.053401⟩
Article dans une revue
hal-02878985v1
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Study of the 3D growth mode of III-V on Si by DFTRéunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France
Poster de conférence
hal-01708149v1
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(114) GaP surface texturation on Si for water splittingEMRS Spring meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01708047v1
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Fe/SrTiO3(001) interface : electron accumulation layer and Schottky barrierJournées GDR OXYFUN, Mar 2018, Piriac-sur-Mer, France
Communication dans un congrès
hal-01742995v1
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A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01910535v1
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III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01910543v1
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Solar Water Splitting: surface energy engineering of GaP Template on SiEuropean Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Communication dans un congrès
hal-02114792v1
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Etude de la croissance cohérente de GaP/Si(001) en couche minceRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
Communication dans un congrès
hal-01497149v1
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3D GaP/Si(001) growth mode and antiphase boundaries19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Communication dans un congrès
hal-01497144v1
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Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03402689v1
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Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01496729v1
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X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on SiliconInternational Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016
Poster de conférence
hal-01496666v1
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(In)GaP integration on Si for photonics and energyEuropean Materials Research Society - Fall Meeting 2015 (E-MRS 2015 Fall Meeting), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01497184v1
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Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
Communication dans un congrès
hal-01910556v1
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GaP/Si Antiphase domains annihilation at the early stages of growthSummer School of the French Epitaxy Network, Sep 2015, Porquerolles, France
Poster de conférence
hal-02497252v1
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Universal description of III-V/Si epitaxial growth processesPhysical Review Materials, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩
Article dans une revue
hal-01833206v1
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy.Réunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France
Communication dans un congrès
hal-01715954v1
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy16th International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany
Communication dans un congrès
hal-01715971v1
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Nano Beam X-ray Scattering on GaP/Si for III-V Monolithic Integration on SiliconEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-02352639v1
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A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Communication dans un congrès
hal-02048639v1
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Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on SiEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Poster de conférence
hal-01497064v1
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
Communication dans un congrès
hal-01708282v1
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A Stress-Free and Textured GaP Template on Silicon for Solar Water SplittingAdvanced Functional Materials, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩
Article dans une revue
hal-01803990v1
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Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applicationsEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018
Poster de conférence
hal-01866135v1
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