Nombre de documents

99

Sidi OULD SAAD HAMADY


Semiconducteurs

Optoélectronique

Caractérisation électrique

Instrumentation

Simulation numérique

Programmation


Article dans une revue47 documents

  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Effects of structural defects and polarization charges in InGaN-based double-junction solar cell. Superlattices and Microstructures, Elsevier, 2017, 〈10.1016/j.spmi.2017.04.025〉. 〈hal-01513102〉
  • Mohammed Bouzaki, Michel Aillerie, S. Ould Saad Hamadi, Meriem Chadel, Boumediene Benyoucef. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells. Materials Research Express, IOP Publishing Ltd, 2016, 3 (10), pp.105502. 〈http://stacks.iop.org/2053-1591/3/i=10/a=105502〉. 〈hal-01402158〉
  • Sidi Ould Saad Hamady, Abdoulwahab Adaine, Nicolas Fressengeas. Numerical simulation of InGaN Schottky solar cell . Materials Science in Semiconductor Processing, Elsevier, 2016, 41, pp.219-225. 〈http://www.sciencedirect.com/science/article/pii/S1369800115301797〉. 〈10.1016/j.mssp.2015.09.001〉. 〈hal-01256060〉
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Simulation study of a new InGaN p-layer free Schottky based solar cell. Superlattices and Microstructures, Elsevier, 2016, 96, pp.121-133. 〈10.1016/j.spmi.2016.05.020〉. 〈hal-01318037〉
  • J. Huguenin, S. O. S. Hamady, P. Bourson. Monitoring deprotonation of gallic acid by Raman spectroscopy. Journal of Raman Spectroscopy, Wiley, 2015, 46 (7), pp.DOI: 10.1002/jrs.4752. 〈hal-01227879〉
  • A. Bedia, F.Z. Bedia, M. Aillerie, Nabila Maloufi, S. Ould Saad, et al.. Optical, electrical and structural properties of nano-pyramidal ZnO films grown on glass substrate by spray pyrolysis technique. Optical Materials, Elsevier, 2014, 36 (7), pp.1123-1130. 〈10.1016/j.optmat.2014.02.012〉. 〈hal-00964885〉
  • S. Ould Saad Hamady. A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors. Journal of Semiconductors, 2012, 33 (3), pp.034002. 〈hal-00772108〉
  • S. Ould Saad Hamady. Simulation of AlGaN and BGaN metal-semiconductor-metal ultraviolet photodetectors. physica status solidi (c), Wiley, 2012, 9 (3-4), pp.1099-1104. 〈hal-00772112〉
  • A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012. 〈hal-00720225〉
  • Frédéric Genty, Samuel Margueron, Sidi Ould Saad Hamady, Jean-Claude Petit, Hussein Srour, et al.. Low Temperature Transparent ITO-based Contacts for Mid-IR Applications. MRS Proceedings, 2011, 1327, pp.mrss11--1327. 〈hal-01276965〉
  • H Srour, Jp Salvestrini, A Ahaitouf, S Gautier, T Moudakir, et al.. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices. Applied Physics Letters, American Institute of Physics, 2011, 99 (22), pp.221101. 〈hal-01277006〉
  • B. Belaabed, S. Lamouri, N. Naar, P. Bourson, S. Ould Saad. Polyaniline-doped benzene sulfonic acid/epoxy resin composites: structural, morphological, thermal and dielectric behaviors. Polymer Journal, Nature Publishing Group, 2010, 42, pp.546-554. 〈hal-00587328〉
  • Belkacem Belaabed, Saad Lamouri, Nacera Naar, Patrice Bourson, Sidi Ould Saad Hamady. Polyaniline-doped benzene sulfonic acid/epoxy resin composites: structural, morphological, thermal and dielectric behaviors. Polymer Journal, Nature Publishing Group, 2010, 42 (7), pp.546--554. 〈hal-01277009〉
  • R. Hammoum, S. Ould Saad Hamady, M.D. Fontana. Generalized model for incoherent detection in confocal optical microscopy. Applied optics, Optical Society of America, 2010, pp.96-105. 〈hal-00515692〉
  • T. Baghdadli, S. Ould Saad Hamady, S. Gautier, T. Moudakir, B. Benyoucef, et al.. Electrical and Structural Characterizations of BGaN Thin Films Grown by Metal-Organic Vapor-Phase Epitaxy. physica status solidi (c), Wiley, 2009, 6 (S2), pp.S1029-S1032. 〈hal-00448879〉
  • W.H. Goh, J. Martin, S. Ould-Saad Hamadi, A. Martinez, L. Le Gratiet, et al.. Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy. physica status solidi (c), Wiley, 2009, 6 (S2), pp.S510-S513. 〈hal-00335012〉
  • T Baghdadli, Sidi Ould Saad Hamady, S Gautier, T Moudakir, B Benyoucef, et al.. Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy. physica status solidi (c), Wiley, 2009, 6 (S2), pp.S1029--S1032. 〈hal-01277011〉
  • A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by MOVPE on ZnO-buffered c-sapphire Substrates. Journal of Crystal Growth, Elsevier, 2008, 310, pp.944-947. 〈10.1016/j.jcrysgro.2007.11.137〉. 〈hal-00181628〉
  • A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, Elsevier, 2008, pp.944. 〈hal-00350864〉
  • Sidi Ould Saad Hamady, N Dupuis, J Décobert, A Ougazzaden. Micro-Raman for compositions characterization of selective area growth of AlxGayIn 1- x- yAs materials by metal-organic vapor-phase epitaxy. Journal of Crystal Growth, Elsevier, 2008, 310 (23), pp.4741--4746. 〈hal-01276973〉
  • S. Ould Saad Hamady, N. Dupuis, J. Decobert, A. Ougazzaden. Micro-Raman for compositions characterization of selective area growth of AlxGayIn1 -x-yAs materials by metal-organic vapor-phase epitaxy. Journal of Crystal Growth, Elsevier, 2008, 310 (23), pp.4741-4746. 〈hal-00319145〉
  • Sidi Ould Saad Hamady, T Baghdadli, S Gautier, M Bouchaour, J Martin, et al.. Raman scattering study of BxGa1―xN growth on AlN template substrate. physica status solidi (c), Wiley, 2008, 5 (9), pp.3051--3053. 〈hal-01276975〉
  • Sidi Ould Saad Hamady, T Baghdadli, S Gautier, M Bouchaour, J Martin, et al.. Raman scattering study of BxGa1―xN growth on AlN template substrate. physica status solidi (c), Wiley, 2008, 5 (9), pp.3051--3053. 〈hal-01277013〉
  • S. Ould Saad Hamady, T. Baghdadli, S. Gautier, M. Bouchaour, J. Martin, et al.. Raman scattering study of BxGa1–xN growth on AlN template substrate. physica status solidi (c), Wiley, 2008, 5 ((9)), pp.3051-3053. 〈hal-00319115〉
  • T. Moudakir, G. Orsal, N. Maloufi, S. Gautier, M. Bouchaour, et al.. Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE. European Physical Journal: Applied Physics, EDP Sciences, 2008, 43, pp.295-299. 〈hal-00181707〉
  • T Moudakir, G Orsal, N Maloufi, Aa Sirenko, S Gautier, et al.. Structural and morphological studies of GaN thin films grown on different oriented LiNbO 3 substrates by MOVPE. European Physical Journal: Applied Physics, EDP Sciences, 2008, 43 (03), pp.295--299. 〈hal-01277015〉
  • S. Gautier, C. Sartel, S. Ould-Saad Hamady, J. Martin, A. Sirenko, et al.. GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3. Journal of Crystal Growth, Elsevier, 2007, 298, pp.428-432. 〈hal-00181789〉
  • S Gautier, C Sartel, Sidi Ould Saad Hamady, J Martin, A Sirenko, et al.. GaN materials growth by MOVPE in a new-design reactor using DMHy and NH 3. Journal of Crystal Growth, Elsevier, 2007, 298, pp.428--432. 〈hal-01276979〉
  • T Baghdadli, Sidi Ould Saad Hamady, S Gautier, J Martin, M Bouchaour, et al.. Optimisation des contacts Métal/Semi-conducteur et caractérisation électrique de matériaux grand gap à base de nitrure de gallium. Journal of Electron Devices, 2007, 5, pp.101--103. 〈hal-01277016〉
  • T Baghdadli, Sidi Ould Saad Hamady, S Gautier, J Martin, M Bouchaour, et al.. Optimisation des contacts Métal/Semi-conducteur et caractérisation électrique de matériaux grand gap à base de nitrure de gallium. Journal of Electron Devices, 2007, 5, pp.101--103. 〈hal-01276976〉
  • G. Adamopoulos, T. Heiser, U. Giovanella, S. Ould-Saad, K.I.(van De) Wetering, et al.. Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films, Elsevier, 2006, 511-512, pp.371-376. 〈hal-00081210〉
  • George Adamopoulos, Thomas Heiser, U Giovanella, Sidi Ould Saad Hamady, Ki Wetering, et al.. Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films, Elsevier, 2006, 511, pp.371--376. 〈hal-01276982〉
  • T. Heiser, G. Adamopoulos, M. Brinkman, U. Giovanella, S. Ould-Saad, et al.. Nanostructure of self-assembled rod-coil block copolymer films for photovoltaic applications. Thin Solid Films, Elsevier, 2006, 511-512, pp.219-223. 〈hal-00081380〉
  • G. Adamopoulos, Thomas Heiser, U. Giovanella, S. Ould-Saad, K. Van de Wetering, et al.. Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films, Elsevier, 2006, 511-512, pp.371-376. 〈10.1016/j.tsf.2005.12.029〉. 〈hal-00403002〉
  • Thomas Heiser, G. Adamopoulos, Martin Brinkmann, U. Giovanella, S. Ould-Saad, et al.. Nanostructure of self-assembled rod-coil block copolymer films for photovoltaic applications. Thin Solid Films, Elsevier, 2006, 511-512, pp.219-223. 〈10.1016/j.tsf.2005.12.134〉. 〈hal-00402995〉
  • George Adamopoulos, Thomas Heiser, U Giovanella, Sidi Ould Saad Hamady, Ki Wetering, et al.. Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films, Elsevier, 2006, 511, pp.371--376. 〈hal-01277021〉
  • S Gautier, C Sartel, Sidi Ould Saad Hamady, Nabila Maloufi, J Martin, et al.. MOVPE growth study of B x Ga (1- x) N on GaN template substrate. Superlattices and Microstructures, Elsevier, 2006, 40 (4), pp.233--238. 〈hal-01276980〉
  • S. Gautier, C. Sartel, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. MOVPE Growth Study of BxGa(1-x)N on GaN Template Substrate. Superlattices and Microstructures, Elsevier, 2006, 40, pp.233-238. 〈hal-00181630〉
  • C. Sartel, S. Gautier, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and Nitrogen. Superlattices and Microstructures, Elsevier, 2006, 40, pp.476-482. 〈hal-00181631〉
  • C Sartel, S Gautier, Sidi Ould Saad Hamady, Nabila Maloufi, J Martin, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen. Superlattices and Microstructures, Elsevier, 2006, 40 (4), pp.476--482. 〈hal-01276983〉
  • A Sirenko, A Ougazzaden, C Sartel, S Gautier, Sidi Ould Saad Hamady, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen. Superlattices and Microstructures, Elsevier, 2006, 40 (4), pp.476--482. 〈hal-01277025〉
  • F.T. Reis, Denis Mencaraglia, Sidi Ould Saad, Isabelle Seguy, M. Oukachmih, et al.. Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I-V measurements. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.599-602. 〈hal-00320881〉
  • T Heiser, Sidi Ould Saad Hamady, U Giovanella Ki van De Wetering, G Adamopoulos, C Brochon, et al.. Couches minces de copolymères à blocs pour des applications photovolta\"ıques: étude de la morphologie et des propriétés de transport électronique. Rencontres et Journées Techniques sur les Matériaux et Procédés pour la Conversion Photovolta"ıque de l'Énergie Solaire, 2004, pp--223. 〈hal-01277028〉
  • D Mencaraglia, Sidi Ould Saad Hamady, Z Djebbour. Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu (In, Ga) Se 2 and a-Si: H cases. Thin Solid Films, Elsevier, 2003, 431–432, pp.135-142. 〈10.1016/S0040-6090(03)00198-6〉. 〈hal-01276987〉
  • Ft Reis, D Mencaraglia, Sidi Ould Saad Hamady, I Séguy, M Oukachmih, et al.. Characterization of ITO/CuPc/AI and ITO/ZnPc/Al structures using optical and capacitance spectroscopy. Synthetic Metals, Elsevier, 2003, 138 (1–2), pp.33-37. 〈10.1016/S0379-6779(02)01284-5〉. 〈hal-01277029〉
  • J-F Guillemoles, D Lincot, Sidi Ould Saad Hamady, Z Djebbour, D Mencaraglia, et al.. XPS and electrical studies of buried interfaces in Cu (In, Ga) Se 2 solar cells. Thin Solid Films, Elsevier, 2002, 403-404, pp.425-431. 〈10.1016/S0040-6090(01)01539-5〉. 〈hal-01276991〉
  • B Canava, J Vigneron, A Etcheberry, Sidi Ould Saad Hamady, Z Djebbour, et al.. Interface Defects in CIGS-Based Solar Cells From Coupled Electrical and Chemical Points of View. Materials Research Society Symposium Proceedings, 2001, 668, pp.H5--2. 〈hal-01277034〉

Communication dans un congrès42 documents

  • Abdoulwahab Adaine, Nicolas Fressengeas, Sidi Ould Saad Hamady. Simulation et Optimisation d’une cellule solaire Schottky à base d’InGaN. 22ème Colloque de Recherche Inter Écoles Centrales et CentraleSupélec (CRIEC 2016), Jun 2016, Châtenay-Malabry, Gif-sur-Yvette, France. 〈hal-01338308〉
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. New Optimized InGaN Metal-IN Solar Cell. China France Second Workshop on Advanced Materials, Aug 2016, Metz, France. 〈http://www.lem3.fr/CFWAM-2〉. 〈hal-01358346〉
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Comparative study of of PN, PIN and new Schottky based InGaN thin films solar cells. Nanotech France 2016, Jun 2016, Paris, France. 〈http://www.setcor.org/conferences/Nanotech-France-2016〉. 〈hal-01326148〉
  • Joris Huguenin, Hadrien Chaynes, Sidi Ould Saad Hamady, Patrice Bourson. Detection of natural algaecide at low concentration by SERS. 18th EuroAnalysis, 2015, Unknown, Unknown or Invalid Region. 2015. 〈hal-01276996〉
  • J. Huguenin, Sidi Ould Saad Hamady, P. Bourson. Détection d'une substance algicide naturelle à faible concentration par Spectroscopie Raman et SERS. GFSV XX, May 2014, Paris, France. 〈hal-01280716〉
  • J. Huguenin, Sidi Ould Saad Hamady, P. Bourson. Detection of natural algaecide at low concentration with Raman spectroscopy. Europtrode XIΙ, Apr 2014, Athène, France. 〈hal-01280715〉
  • J Huguenin, Sidi Ould Saad Hamady, P Bourson. Détection d'une substance algicide naturelle à faible concentration par Spectroscopie Raman et SERS. GFSV XX, 2014, Unknown, Unknown or Invalid Region. 2014. 〈hal-01276961〉
  • J Huguenin, Sidi Ould Saad Hamady, P Bourson. Detection of natural algaecide at low concentration with Raman spectroscopy. Europtrode XII, 2014, Unknown, Unknown or Invalid Region. 2014. 〈hal-01276998〉
  • J. Huguenin, Sidi Ould Saad Hamady, P. Bourson. Detection of natural algaecide at low concentration with Raman spectroscopy. Europtrode XIΙ, Apr 2014, Athènes, Greece. 〈hal-01117152〉
  • J. Huguenin, Sidi Ould Saad Hamady, P. Bourson. Détection d'une substance algicide naturelle à faible concentration par Spectroscopie Raman et SERS. GFSV XX, May 2014, Paris, France. 〈hal-01117155〉
  • Sidi Ould Saad Hamady, Nicolas Fressengeas. Rigorous optimization of InGaN multijunction solar cells efficiency. E-MRS 2013 SPRING MEETING, May 2013, Strasbourg, France. 〈hal-00835335〉
  • T. Baghdadli, S. Ould Saad Hamady. Measurement and Modeling of Temperature-dependent Resistivity in N- and P-doped AlGaN Epilayers. European Materials Research Society (EMRS 2011), May 2011, Nice, France. 〈hal-00578899〉
  • S. Ould Saad Hamady. Simulation of AlGaN and BGaN Metal-Semiconductor-Metal Ultraviolet Photodetectors. European Materials Research Society (EMRS 2011), May 2011, Nice, France. 〈hal-00578893〉
  • Sidi Ould Saad Hamady. Simulation of AlGaN and BGaN MSM UV photodetectors. 9th International Conference on Nitride Semiconductors, Jul 2011, Glasgow, United Kingdom. 9 (3-4), pp.1099-1104, 2012. 〈hal-00689569〉
  • H Srour, Jp Salvestrini, B Assouar, Sidi Ould Saad Hamady, A Ahaitouf. Investigation of specific contact resistance of optimized ohmic contacts in BGaN/AlN/GaN heterostructures for" solar blind" UV photodetector. Conférence Méditerranéenne sur les Matériaux Innovants et Applications (CIMA 2011), 2011, Unknown, Unknown or Invalid Region. 2011. 〈hal-01277007〉
  • T Baghdadli, Sidi Ould Saad Hamady. Measurement and Modeling of Temperature-dependent Resistivity in N-and P-doped AlGaN Epilayers. European Materials Research Society (EMRS 2011), 2011, Unknown, Unknown or Invalid Region. 2011. 〈hal-01277005〉
  • Frédéric Genty, Samuel Margueron, Sidi Ould Saad Hamady, Jean-Claude Petit, Hussein Srour, et al.. Low Temperature Transparent ITO-based Contacts for Mid-IR Applications. 2011 MRS Spring Meeting and Exhibit, Apr 2011, San Francisco, United States. 1327, mrss11-1327-g09-02-s08-02 (6 p.), 2011, 〈10.1557/opl.2011.1123〉. 〈hal-00652277〉
  • H. Srour, J.P. Salvestrini, B. Assouar, Sidi Ould Saad Hamady, A. Ahaitouf, et al.. Ohmic and Schottky contacts for BGaN based UV photo- and α,β detectors. E-MRS 2011 SPRING MEETING IUMRS ICAM 2011 & E-MRS / MRS BILATERAL CONFERENCE on ENERGY, May 2011, Nice, France. 〈hal-00573026〉
  • A. Ahaitouf, S. Ould Saad, J.P. Salvestrini, H. Srour. Analyse et caractérisation de diodes Schottky Pt/n-GaN. Matériaux 2010, Nov 2010, Mahdia, Tunisie. 〈hal-00579824〉
  • M. Abid, S. Gautier, T. Moudakir, G. Orsal, V. Ravindran, et al.. Investigation of microstructural, optical and electrical properties of BGaN materials grown by MOVPE. ISGN 3, Jun 2010, Montpellier, France. 〈hal-00554354〉
  • D'Havh Boumba Sitou, Sidi Ould Saad Hamady, Nicolas Fressengeas, Hervé Frezza-Buet, Stéphane Vialle, et al.. Cellular based simulation of semiconductors thin films. Innovations in Thin Film Processing and Characterization - ITFPC 09, Nov 2009, Nancy, France. 〈hal-00433062〉
  • T. Baghdadli, S. Ould Saad Hamady, S. Gautier, T. Moudakir, A. Ougazzaden, et al.. Electrical and Structural Characterizations of BGaN Thin Films Grown by Metal-Organic Vapor-Phase Epitaxy. International Workshop on Nitride semiconductors, Oct 2008, Montreux, Switzerland. 〈hal-00362788〉
  • S. Gautier, T. Aggerstam, T. Moudakir, S. Ould Saad, G. Orsal, et al.. HeteroEpitaxial growth of crystalline GaN epilayers on LiNbO3 substrate by MOVPE. EW-MOVPE XII, Jun 2007, Bratislava, Czech Republic. 〈hal-00334605〉
  • M. Bouchaour, N. Maloufi, S. Gautier, J. Martin, T. Baghdadli, et al.. Etude de la morphologie de couches minces à base de GaN épitaxiées par MOVPE sur substrat template AlN. ICRESD'07, 2007, Tlemcen, Algeria. 〈hal-00182455〉
  • S. Gautier, S. Ould Saad Hamady, A. Soltani, T. Aggerstam, J. Martin, et al.. Study of structural and electrical properties of BGa(Al)N alloys grown by MOVPE. EW- MOVPE XII, 2007, Czech Republic. G, pp.261, 2007. 〈hal-00181661〉
  • A. Ougazzaden, S. Gautier, T. Aggerstam, J. Martin, S. Ould Saad Hamadi, et al.. Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications. Symposium on Integrated Optoelectronic Devices, 2007, San Jose, United States. 〈hal-00181651〉
  • T. Moudakir, G. Orsal, N. Maloufi, S. Gautier, M. Bouchaour, et al.. Structural study of GaN grown oriented LiNbO3 by MOVPE. ITFPC, 2007, Nancy, France. 〈hal-00181993〉
  • A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. E-MRS 2007 Spring Meeting, 2007, France. 〈hal-00322269〉
  • S Gautier, Sidi Ould Saad Hamady, A Soltani, T Aggerstam, J Martin, et al.. Study of structural and electrical properties of BGa (Al) N alloys grown by MOVPE. EW-MOVPE XII, 2007, Unknown, Unknown or Invalid Region. pp.261, 2007. 〈hal-01277018〉
  • S. Gautier, C. Sartel, S. Ould Saad Hamady, J. Martin, A. Sirenko, et al.. GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3. IC MOVPE, 2006, Miyazaki, Japan. 〈hal-00334614〉
  • J. Martin, S. Gautier, C. Sartel, N. Maloufi, A. Ramdane, et al.. Etude par épitaxie en phase vapeur aux organométalliques de la micro et nano épitaxie du GaN sur pseudo substrat GaN. Matériaux, 2006, Dijon, France. 〈hal-00181893〉
  • S. Gautier, C. Sartel, J. Martin, S. Ould Saad Hamady, P. Bonanno, et al.. Nouveau matériau a grand gap BGaN pour les applications optoelectroniques dans l'ultraviolet : croissance et caractérisation. JNOG, 2006, Metz, France. 〈hal-00181892〉
  • S. Gautier, C. Sartel, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. MOVPE Growth Study of BxGa(1-x)N on GaN Template Substrate. EMRS spring meeting, 2006, Nice, France. 〈hal-00181874〉
  • C. Sartel, S. Gautier, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and Nitrogen. EMRS spring meeting, 2006, Nice, France. 〈hal-00181889〉
  • S. Gautier, C. Sartel, J. Martin, Sidi Ould Saad, P. Bonanno, et al.. Nouveau matériau à grand gap BGaN pour les applications optoélectroniques dans l'ultraviolet : croissance et caractérisation. 25èmes Journées Nationales d'Optique Guidée, 2006, France. 2006. 〈hal-00321872〉
  • S Gautier, C Sartel, Sidi Ould Saad Hamady, A Ougazzaden. MOVPE growth of wide bandgap materials containing boron B (Al) GaN for compact Ultraviolet lasers. PHysics & Applications of SEmiconductor LASERs, 2006, Unknown, Unknown or Invalid Region. 2006. 〈hal-01277022〉
  • T. Heiser, G. Adamopoulos, M. Brinkman, U. Giovanella, S. Ould Saad Hamady, et al.. Nanostructure of self-assembled rod-coil block copolymer films for photovoltaic applications. European Material Research Society (E-MRS) Spring Conference, Symposium on Thin Film and Nano-Structured Materials for Photovoltaics, 2005, Strasbourg, France. 2005. 〈hal-00021669〉
  • S. Gautier, C. Sartel, S. Ould-Saad Hamady, A. Ougazzaden. MOVPE growth of wide bandgap materials containing boron B(Al)GaN for compact Ultraviolet lasers. PHysics & Applications of SEmiconductor LASERs, 2005, Metz, France. 〈hal-00181871〉
  • T. Heiser, S. Ould Saad Hamady, U. Giovanella K.I. (van De) Wetering, G. Adamopoulos, C. Brochon, et al.. Couches minces de copolymères à blocs pour des applications photovoltaïques : étude de la morphologie et des propriétés de transport électronique. 2004, Actes, pp. 223-226, 2004. 〈hal-00133399〉
  • B. Canava, A. Etcheberry, J. Vigneron, J.-F. Guillemoles, D. Lincot, et al.. Electrical and chemical characterizations of the heterointerfaces in Cu(In,Ga)Se2 solar cells. 19th European Photovoltaic Solar Energy Conference, 2004, France. pp.1962-1964, 2004. 〈hal-00321099〉
  • B Canava, A Etcheberry, J Vigneron, Jf Guillemoles, D Lincot, et al.. ELECTRIC AND CHEMICAL CHARACTERIZATIONS OF THE HETEROINTERFACES IN THE Cu (In, Ga) Se2 SOLAR CELLS. 19th European Photovoltaic Solar Energy Conference, 2004, Unknown, Unknown or Invalid Region. 2004. 〈hal-01276984〉
  • Z Djebbour, A Dubois, Sidi Ould Saad Hamady, D Mencaraglia, B Canava, et al.. Ammonia pretreatment influence on the defect properties of Cu (In, Ga) Se/sub 2/solar cells from admittance spectroscopy. Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on, 2003, Unknown, Unknown or Invalid Region. 1, pp.388-391, 2003. 〈hal-01276990〉

Poster8 documents

  • Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Effect of Interface Properties on the Electrical Characteristics of InGaN-based Multijunction Solar Cell. ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France. 〈hal-01579140〉
  • Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Influence of defect and polarization on efficiency of InGaN-based double-junction solar cell. Compound Semiconductor Week 2017 , May 2017, Berlin, Germany. 〈http://www.csw2017.org/〉. 〈hal-01523515〉
  • Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Multivariate numerical optimization of an InGaN-based hetero junction solar cell. The Euro-TMCS II: Theory, Modelling and Computational Methods for Semiconductors, Dec 2016, Cork, Ireland. 0001. 〈hal-01425924〉
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Simulation et Optimisation d’une cellule solaire Schottky à base d’InGaN. Séminaire de l’école doctorale EMMA, Apr 2016, Nancy, France. 〈hal-01338242〉
  • J. Huguenin, H. Chaynes, Sidi Ould Saad Hamady, P. Bourson. Detection of natural algaecide at low concentration by SERS. GFSV XXI, Jun 2015, Reims, France. 2015. 〈hal-01227893〉
  • J. Huguenin, H. Chaynes, P. Bourson, Sidi Ould Saad Hamady. Detection of natural algaecide at low concentration by SERS. 18th EuroAnalysis, Sep 2015, Bordeaux, France. 2015. 〈hal-01227897〉
  • J. Huguenin, P. Bourson, S. Ould Saad Hamady, I. Durickovic. Use of Raman spectroscopy coupled to the chemometrics for measuring weak concentration in a aqueous solution. NIR / GFSV 2013, Jun 2013, La Grande Motte, France. 〈hal-01280739〉
  • J. Huguenin, P. Bourson, S. Ould Saad Hamady, I. Durickovic. Use of Raman spectroscopy coupled to the chemometrics for measuring weak concentration in a aqueous solution. NIR / GFSV 2013, Jun 2013, La Grande Motte, France. 〈hal-01281395〉

Ouvrage (y compris édition critique et traduction)1 document

  • S Gautier, Sidi Ould Saad Hamady, A Soltani, T Aggerstam, N Maloufi, et al.. EWMOVPE 2007, Vol. G, 261, 2007. 〈hal-01276978〉

Pré-publication, Document de travail1 document

  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance. 2017. 〈hal-01523416〉