Nombre de documents

98

Sidi OULD SAAD HAMADY


Semiconducteurs

Optoélectronique

Caractérisation électrique

Instrumentation

Simulation numérique

Programmation


Article dans une revue47 documents

  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Effects of structural defects and polarization charges in InGaN-based double-junction solar cell. Superlattices and Microstructures, Elsevier, 2017, <10.1016/j.spmi.2017.04.025>. <hal-01513102>
  • Mohammed Bouzaki, Michel Aillerie, S. Ould Saad Hamadi, Meriem Chadel, Boumediene Benyoucef. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells. Materials Research Express, IOP Publishing Ltd, 2016, 3 (10), pp.105502. <http://stacks.iop.org/2053-1591/3/i=10/a=105502>. <hal-01402158>
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Simulation study of a new InGaN p-layer free Schottky based solar cell. Superlattices and Microstructures, Elsevier, 2016, 96, pp.121-133. <10.1016/j.spmi.2016.05.020>. <hal-01318037>
  • Sidi Ould Saad Hamady, Abdoulwahab Adaine, Nicolas Fressengeas. Numerical simulation of InGaN Schottky solar cell . Materials Science in Semiconductor Processing, Elsevier, 2016, 41, pp.219-225. <http://www.sciencedirect.com/science/article/pii/S1369800115301797>. <10.1016/j.mssp.2015.09.001>. <hal-01256060>
  • J. Huguenin, S. O. S. Hamady, P. Bourson. Monitoring deprotonation of gallic acid by Raman spectroscopy. Journal of Raman Spectroscopy, Wiley, 2015, 46 (7), pp.DOI: 10.1002/jrs.4752. <hal-01227879>
  • A. Bedia, F.Z. Bedia, M. Aillerie, Nabila Maloufi, S. Ould Saad, et al.. Optical, electrical and structural properties of nano-pyramidal ZnO films grown on glass substrate by spray pyrolysis technique. Optical Materials, Elsevier, 2014, 36 (7), pp.1123-1130. <10.1016/j.optmat.2014.02.012>. <hal-00964885>
  • S. Ould Saad Hamady. Simulation of AlGaN and BGaN metal-semiconductor-metal ultraviolet photodetectors. physica status solidi (c), Wiley, 2012, 9 (3-4), pp.1099-1104. <hal-00772112>
  • S. Ould Saad Hamady. A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors. Journal of Semiconductors, 2012, 33 (3), pp.034002. <hal-00772108>
  • A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012. <hal-00720225>
  • Frédéric Genty, Samuel Margueron, Sidi Ould Saad Hamady, Jean-Claude Petit, Hussein Srour, et al.. Low Temperature Transparent ITO-based Contacts for Mid-IR Applications. MRS Proceedings, 2011, 1327, pp.mrss11--1327. <hal-01276965>
  • H Srour, Jp Salvestrini, A Ahaitouf, S Gautier, T Moudakir, et al.. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices. Applied Physics Letters, American Institute of Physics, 2011, 99 (22), pp.221101. <hal-01277006>
  • B. Belaabed, S. Lamouri, N. Naar, P. Bourson, S. Ould Saad. Polyaniline-doped benzene sulfonic acid/epoxy resin composites: structural, morphological, thermal and dielectric behaviors. Polymer Journal, Nature Publishing Group, 2010, 42, pp.546-554. <hal-00587328>
  • Belkacem Belaabed, Saad Lamouri, Nacera Naar, Patrice Bourson, Sidi Ould Saad Hamady. Polyaniline-doped benzene sulfonic acid/epoxy resin composites: structural, morphological, thermal and dielectric behaviors. Polymer Journal, Nature Publishing Group, 2010, 42 (7), pp.546--554. <hal-01277009>
  • R. Hammoum, S. Ould Saad Hamady, M.D. Fontana. Generalized model for incoherent detection in confocal optical microscopy. Applied optics, Optical Society of America, 2010, pp.96-105. <hal-00515692>
  • T. Baghdadli, S. Ould Saad Hamady, S. Gautier, T. Moudakir, B. Benyoucef, et al.. Electrical and Structural Characterizations of BGaN Thin Films Grown by Metal-Organic Vapor-Phase Epitaxy. physica status solidi (c), Wiley, 2009, 6 (S2), pp.S1029-S1032. <hal-00448879>
  • W.H. Goh, J. Martin, S. Ould-Saad Hamadi, A. Martinez, L. Le Gratiet, et al.. Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy. physica status solidi (c), Wiley, 2009, 6 (S2), pp.S510-S513. <hal-00335012>
  • T Baghdadli, Sidi Ould Saad Hamady, S Gautier, T Moudakir, B Benyoucef, et al.. Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy. physica status solidi (c), Wiley, 2009, 6 (S2), pp.S1029--S1032. <hal-01277011>
  • S. Ould Saad Hamady, T. Baghdadli, S. Gautier, M. Bouchaour, J. Martin, et al.. Raman scattering study of BxGa1–xN growth on AlN template substrate. physica status solidi (c), Wiley, 2008, 5 ((9)), pp.3051-3053. <hal-00319115>
  • Sidi Ould Saad Hamady, T Baghdadli, S Gautier, M Bouchaour, J Martin, et al.. Raman scattering study of BxGa1―xN growth on AlN template substrate. physica status solidi (c), Wiley, 2008, 5 (9), pp.3051--3053. <hal-01277013>
  • Sidi Ould Saad Hamady, T Baghdadli, S Gautier, M Bouchaour, J Martin, et al.. Raman scattering study of BxGa1―xN growth on AlN template substrate. physica status solidi (c), Wiley, 2008, 5 (9), pp.3051--3053. <hal-01276975>
  • T Moudakir, G Orsal, N Maloufi, Aa Sirenko, S Gautier, et al.. Structural and morphological studies of GaN thin films grown on different oriented LiNbO 3 substrates by MOVPE. European Physical Journal: Applied Physics, EDP Sciences, 2008, 43 (03), pp.295--299. <hal-01277015>
  • T. Moudakir, G. Orsal, N. Maloufi, S. Gautier, M. Bouchaour, et al.. Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE. European Physical Journal: Applied Physics, EDP Sciences, 2008, 43, pp.295-299. <hal-00181707>
  • Sidi Ould Saad Hamady, N Dupuis, J Décobert, A Ougazzaden. Micro-Raman for compositions characterization of selective area growth of AlxGayIn 1- x- yAs materials by metal-organic vapor-phase epitaxy. Journal of Crystal Growth, Elsevier, 2008, 310 (23), pp.4741--4746. <hal-01276973>
  • A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by MOVPE on ZnO-buffered c-sapphire Substrates. Journal of Crystal Growth, Elsevier, 2008, 310, pp.944-947. <10.1016/j.jcrysgro.2007.11.137>. <hal-00181628>
  • A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, Elsevier, 2008, pp.944. <hal-00350864>
  • S. Ould Saad Hamady, N. Dupuis, J. Decobert, A. Ougazzaden. Micro-Raman for compositions characterization of selective area growth of AlxGayIn1 -x-yAs materials by metal-organic vapor-phase epitaxy. Journal of Crystal Growth, Elsevier, 2008, 310 (23), pp.4741-4746. <hal-00319145>
  • T Baghdadli, Sidi Ould Saad Hamady, S Gautier, J Martin, M Bouchaour, et al.. Optimisation des contacts Métal/Semi-conducteur et caractérisation électrique de matériaux grand gap à base de nitrure de gallium. Journal of Electron Devices, 2007, 5, pp.101--103. <hal-01276976>
  • T Baghdadli, Sidi Ould Saad Hamady, S Gautier, J Martin, M Bouchaour, et al.. Optimisation des contacts Métal/Semi-conducteur et caractérisation électrique de matériaux grand gap à base de nitrure de gallium. Journal of Electron Devices, 2007, 5, pp.101--103. <hal-01277016>
  • S Gautier, C Sartel, Sidi Ould Saad Hamady, J Martin, A Sirenko, et al.. GaN materials growth by MOVPE in a new-design reactor using DMHy and NH 3. Journal of Crystal Growth, Elsevier, 2007, 298, pp.428--432. <hal-01276979>
  • S. Gautier, C. Sartel, S. Ould-Saad Hamady, J. Martin, A. Sirenko, et al.. GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3. Journal of Crystal Growth, Elsevier, 2007, 298, pp.428-432. <hal-00181789>
  • A Sirenko, A Ougazzaden, C Sartel, S Gautier, Sidi Ould Saad Hamady, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen. Superlattices and Microstructures, Elsevier, 2006, 40 (4), pp.476--482. <hal-01277025>
  • S Gautier, C Sartel, Sidi Ould Saad Hamady, Nabila Maloufi, J Martin, et al.. MOVPE growth study of B x Ga (1- x) N on GaN template substrate. Superlattices and Microstructures, Elsevier, 2006, 40 (4), pp.233--238. <hal-01276980>
  • C Sartel, S Gautier, Sidi Ould Saad Hamady, Nabila Maloufi, J Martin, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen. Superlattices and Microstructures, Elsevier, 2006, 40 (4), pp.476--482. <hal-01276983>
  • C. Sartel, S. Gautier, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and Nitrogen. Superlattices and Microstructures, Elsevier, 2006, 40, pp.476-482. <hal-00181631>
  • S. Gautier, C. Sartel, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. MOVPE Growth Study of BxGa(1-x)N on GaN Template Substrate. Superlattices and Microstructures, Elsevier, 2006, 40, pp.233-238. <hal-00181630>
  • George Adamopoulos, Thomas Heiser, U Giovanella, Sidi Ould Saad Hamady, Ki Wetering, et al.. Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films, Elsevier, 2006, 511, pp.371--376. <hal-01276982>
  • George Adamopoulos, Thomas Heiser, U Giovanella, Sidi Ould Saad Hamady, Ki Wetering, et al.. Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films, Elsevier, 2006, 511, pp.371--376. <hal-01277021>
  • Thomas Heiser, G. Adamopoulos, Martin Brinkmann, U. Giovanella, S. Ould-Saad, et al.. Nanostructure of self-assembled rod-coil block copolymer films for photovoltaic applications. Thin Solid Films, Elsevier, 2006, 511-512, pp.219-223. <10.1016/j.tsf.2005.12.134>. <hal-00402995>
  • G. Adamopoulos, Thomas Heiser, U. Giovanella, S. Ould-Saad, K. Van de Wetering, et al.. Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films, Elsevier, 2006, 511-512, pp.371-376. <10.1016/j.tsf.2005.12.029>. <hal-00403002>
  • G. Adamopoulos, T. Heiser, U. Giovanella, S. Ould-Saad, K.I.(van De) Wetering, et al.. Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films, Elsevier, 2006, 511-512, pp.371-376. <hal-00081210>
  • T. Heiser, G. Adamopoulos, M. Brinkman, U. Giovanella, S. Ould-Saad, et al.. Nanostructure of self-assembled rod-coil block copolymer films for photovoltaic applications. Thin Solid Films, Elsevier, 2006, 511-512, pp.219-223. <hal-00081380>
  • T Heiser, Sidi Ould Saad Hamady, U Giovanella Ki van De Wetering, G Adamopoulos, C Brochon, et al.. Couches minces de copolymères à blocs pour des applications photovolta\"ıques: étude de la morphologie et des propriétés de transport électronique. Rencontres et Journées Techniques sur les Matériaux et Procédés pour la Conversion Photovolta"ıque de l'Énergie Solaire, 2004, pp--223. <hal-01277028>
  • F.T. Reis, Denis Mencaraglia, Sidi Ould Saad, Isabelle Seguy, M. Oukachmih, et al.. Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I-V measurements. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.599-602. <hal-00320881>
  • D Mencaraglia, Sidi Ould Saad Hamady, Z Djebbour. Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu (In, Ga) Se 2 and a-Si: H cases. Thin Solid Films, Elsevier, 2003, 431–432, pp.135-142. <10.1016/S0040-6090(03)00198-6>. <hal-01276987>
  • Ft Reis, D Mencaraglia, Sidi Ould Saad Hamady, I Séguy, M Oukachmih, et al.. Characterization of ITO/CuPc/AI and ITO/ZnPc/Al structures using optical and capacitance spectroscopy. Synthetic Metals, Elsevier, 2003, 138 (1–2), pp.33-37. <10.1016/S0379-6779(02)01284-5>. <hal-01277029>
  • J-F Guillemoles, D Lincot, Sidi Ould Saad Hamady, Z Djebbour, D Mencaraglia, et al.. XPS and electrical studies of buried interfaces in Cu (In, Ga) Se 2 solar cells. Thin Solid Films, Elsevier, 2002, 403-404, pp.425-431. <10.1016/S0040-6090(01)01539-5>. <hal-01276991>
  • B Canava, J Vigneron, A Etcheberry, Sidi Ould Saad Hamady, Z Djebbour, et al.. Interface Defects in CIGS-Based Solar Cells From Coupled Electrical and Chemical Points of View. Materials Research Society Symposium Proceedings, 2001, 668, pp.H5--2. <hal-01277034>

Communication dans un congrès42 documents

  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Comparative study of of PN, PIN and new Schottky based InGaN thin films solar cells. Nanotech France 2016, Jun 2016, Paris, France. <http://www.setcor.org/conferences/Nanotech-France-2016>. <hal-01326148>
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. New Optimized InGaN Metal-IN Solar Cell. China France Second Workshop on Advanced Materials, Aug 2016, Metz, France. <http://www.lem3.fr/CFWAM-2>. <hal-01358346>
  • Abdoulwahab Adaine, Nicolas Fressengeas, Sidi Ould Saad Hamady. Simulation et Optimisation d’une cellule solaire Schottky à base d’InGaN. 22ème Colloque de Recherche Inter Écoles Centrales et CentraleSupélec (CRIEC 2016), Jun 2016, Châtenay-Malabry, Gif-sur-Yvette, France. <hal-01338308>
  • Joris Huguenin, Hadrien Chaynes, Sidi Ould Saad Hamady, Patrice Bourson. Detection of natural algaecide at low concentration by SERS. 18th EuroAnalysis, 2015, Unknown, Unknown or Invalid Region. 2015. <hal-01276996>
  • J. Huguenin, Sidi Ould Saad Hamady, P. Bourson. Detection of natural algaecide at low concentration with Raman spectroscopy. Europtrode XIΙ, Apr 2014, Athènes, Greece. <hal-01117152>
  • J. Huguenin, Sidi Ould Saad Hamady, P. Bourson. Détection d'une substance algicide naturelle à faible concentration par Spectroscopie Raman et SERS. GFSV XX, May 2014, Paris, France. <hal-01117155>
  • J Huguenin, Sidi Ould Saad Hamady, P Bourson. Detection of natural algaecide at low concentration with Raman spectroscopy. Europtrode XII, 2014, Unknown, Unknown or Invalid Region. 2014. <hal-01276998>
  • J Huguenin, Sidi Ould Saad Hamady, P Bourson. Détection d'une substance algicide naturelle à faible concentration par Spectroscopie Raman et SERS. GFSV XX, 2014, Unknown, Unknown or Invalid Region. 2014. <hal-01276961>
  • J. Huguenin, Sidi Ould Saad Hamady, P. Bourson. Detection of natural algaecide at low concentration with Raman spectroscopy. Europtrode XIΙ, Apr 2014, Athène, France. <hal-01280715>
  • J. Huguenin, Sidi Ould Saad Hamady, P. Bourson. Détection d'une substance algicide naturelle à faible concentration par Spectroscopie Raman et SERS. GFSV XX, May 2014, Paris, France. <hal-01280716>
  • Sidi Ould Saad Hamady, Nicolas Fressengeas. Rigorous optimization of InGaN multijunction solar cells efficiency. E-MRS 2013 SPRING MEETING, May 2013, Strasbourg, France. <hal-00835335>
  • Frédéric Genty, Samuel Margueron, Sidi Ould Saad Hamady, Jean-Claude Petit, Hussein Srour, et al.. Low Temperature Transparent ITO-based Contacts for Mid-IR Applications. 2011 MRS Spring Meeting and Exhibit, Apr 2011, San Francisco, United States. 1327, mrss11-1327-g09-02-s08-02 (6 p.), 2011, <10.1557/opl.2011.1123>. <hal-00652277>
  • Sidi Ould Saad Hamady. Simulation of AlGaN and BGaN MSM UV photodetectors. 9th International Conference on Nitride Semiconductors, Jul 2011, Glasgow, United Kingdom. 9 (3-4), pp.1099-1104, 2012. <hal-00689569>
  • H. Srour, J.P. Salvestrini, B. Assouar, Sidi Ould Saad Hamady, A. Ahaitouf, et al.. Ohmic and Schottky contacts for BGaN based UV photo- and α,β detectors. E-MRS 2011 SPRING MEETING IUMRS ICAM 2011 & E-MRS / MRS BILATERAL CONFERENCE on ENERGY, May 2011, Nice, France. <hal-00573026>
  • T. Baghdadli, S. Ould Saad Hamady. Measurement and Modeling of Temperature-dependent Resistivity in N- and P-doped AlGaN Epilayers. European Materials Research Society (EMRS 2011), May 2011, Nice, France. <hal-00578899>
  • H Srour, Jp Salvestrini, B Assouar, Sidi Ould Saad Hamady, A Ahaitouf. Investigation of specific contact resistance of optimized ohmic contacts in BGaN/AlN/GaN heterostructures for" solar blind" UV photodetector. Conférence Méditerranéenne sur les Matériaux Innovants et Applications (CIMA 2011), 2011, Unknown, Unknown or Invalid Region. 2011. <hal-01277007>
  • S. Ould Saad Hamady. Simulation of AlGaN and BGaN Metal-Semiconductor-Metal Ultraviolet Photodetectors. European Materials Research Society (EMRS 2011), May 2011, Nice, France. <hal-00578893>
  • T Baghdadli, Sidi Ould Saad Hamady. Measurement and Modeling of Temperature-dependent Resistivity in N-and P-doped AlGaN Epilayers. European Materials Research Society (EMRS 2011), 2011, Unknown, Unknown or Invalid Region. 2011. <hal-01277005>
  • M. Abid, S. Gautier, T. Moudakir, G. Orsal, V. Ravindran, et al.. Investigation of microstructural, optical and electrical properties of BGaN materials grown by MOVPE. ISGN 3, Jun 2010, Montpellier, France. <hal-00554354>
  • A. Ahaitouf, S. Ould Saad, J.P. Salvestrini, H. Srour. Analyse et caractérisation de diodes Schottky Pt/n-GaN. Matériaux 2010, Nov 2010, Mahdia, Tunisie. <hal-00579824>
  • D'Havh Boumba Sitou, Sidi Ould Saad Hamady, Nicolas Fressengeas, Hervé Frezza-Buet, Stéphane Vialle, et al.. Cellular based simulation of semiconductors thin films. Innovations in Thin Film Processing and Characterization - ITFPC 09, Nov 2009, Nancy, France. <hal-00433062>
  • T. Baghdadli, S. Ould Saad Hamady, S. Gautier, T. Moudakir, A. Ougazzaden, et al.. Electrical and Structural Characterizations of BGaN Thin Films Grown by Metal-Organic Vapor-Phase Epitaxy. International Workshop on Nitride semiconductors, Oct 2008, Montreux, Switzerland. <hal-00362788>
  • S. Gautier, S. Ould Saad Hamady, A. Soltani, T. Aggerstam, J. Martin, et al.. Study of structural and electrical properties of BGa(Al)N alloys grown by MOVPE. EW- MOVPE XII, 2007, Czech Republic. G, pp.261, 2007. <hal-00181661>
  • A. Ougazzaden, S. Gautier, T. Aggerstam, J. Martin, S. Ould Saad Hamadi, et al.. Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications. Symposium on Integrated Optoelectronic Devices, 2007, San Jose, United States. <hal-00181651>
  • S Gautier, Sidi Ould Saad Hamady, A Soltani, T Aggerstam, J Martin, et al.. Study of structural and electrical properties of BGa (Al) N alloys grown by MOVPE. EW-MOVPE XII, 2007, Unknown, Unknown or Invalid Region. pp.261, 2007. <hal-01277018>
  • A. Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, et al.. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. E-MRS 2007 Spring Meeting, 2007, France. <hal-00322269>
  • S. Gautier, T. Aggerstam, T. Moudakir, S. Ould Saad, G. Orsal, et al.. HeteroEpitaxial growth of crystalline GaN epilayers on LiNbO3 substrate by MOVPE. EW-MOVPE XII, Jun 2007, Bratislava, Czech Republic. <hal-00334605>
  • M. Bouchaour, N. Maloufi, S. Gautier, J. Martin, T. Baghdadli, et al.. Etude de la morphologie de couches minces à base de GaN épitaxiées par MOVPE sur substrat template AlN. ICRESD'07, 2007, Tlemcen, Algeria. <hal-00182455>
  • T. Moudakir, G. Orsal, N. Maloufi, S. Gautier, M. Bouchaour, et al.. Structural study of GaN grown oriented LiNbO3 by MOVPE. ITFPC, 2007, Nancy, France. <hal-00181993>
  • C. Sartel, S. Gautier, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and Nitrogen. EMRS spring meeting, 2006, Nice, France. <hal-00181889>
  • S. Gautier, C. Sartel, J. Martin, Sidi Ould Saad, P. Bonanno, et al.. Nouveau matériau à grand gap BGaN pour les applications optoélectroniques dans l'ultraviolet : croissance et caractérisation. 25èmes Journées Nationales d'Optique Guidée, 2006, France. 2006. <hal-00321872>
  • S. Gautier, C. Sartel, S. Ould Saad Hamady, J. Martin, A. Sirenko, et al.. GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3. IC MOVPE, 2006, Miyazaki, Japan. <hal-00334614>
  • J. Martin, S. Gautier, C. Sartel, N. Maloufi, A. Ramdane, et al.. Etude par épitaxie en phase vapeur aux organométalliques de la micro et nano épitaxie du GaN sur pseudo substrat GaN. Matériaux, 2006, Dijon, France. <hal-00181893>
  • S. Gautier, C. Sartel, S. Ould Saad Hamady, N. Maloufi, J. Martin, et al.. MOVPE Growth Study of BxGa(1-x)N on GaN Template Substrate. EMRS spring meeting, 2006, Nice, France. <hal-00181874>
  • S. Gautier, C. Sartel, J. Martin, S. Ould Saad Hamady, P. Bonanno, et al.. Nouveau matériau a grand gap BGaN pour les applications optoelectroniques dans l'ultraviolet : croissance et caractérisation. JNOG, 2006, Metz, France. <hal-00181892>
  • S Gautier, C Sartel, Sidi Ould Saad Hamady, A Ougazzaden. MOVPE growth of wide bandgap materials containing boron B (Al) GaN for compact Ultraviolet lasers. PHysics & Applications of SEmiconductor LASERs, 2006, Unknown, Unknown or Invalid Region. 2006. <hal-01277022>
  • T. Heiser, G. Adamopoulos, M. Brinkman, U. Giovanella, S. Ould Saad Hamady, et al.. Nanostructure of self-assembled rod-coil block copolymer films for photovoltaic applications. European Material Research Society (E-MRS) Spring Conference, Symposium on Thin Film and Nano-Structured Materials for Photovoltaics, 2005, Strasbourg, France. 2005. <hal-00021669>
  • S. Gautier, C. Sartel, S. Ould-Saad Hamady, A. Ougazzaden. MOVPE growth of wide bandgap materials containing boron B(Al)GaN for compact Ultraviolet lasers. PHysics & Applications of SEmiconductor LASERs, 2005, Metz, France. <hal-00181871>
  • T. Heiser, S. Ould Saad Hamady, U. Giovanella K.I. (van De) Wetering, G. Adamopoulos, C. Brochon, et al.. Couches minces de copolymères à blocs pour des applications photovoltaïques : étude de la morphologie et des propriétés de transport électronique. 2004, Actes, pp. 223-226, 2004. <hal-00133399>
  • B. Canava, A. Etcheberry, J. Vigneron, J.-F. Guillemoles, D. Lincot, et al.. Electrical and chemical characterizations of the heterointerfaces in Cu(In,Ga)Se2 solar cells. 19th European Photovoltaic Solar Energy Conference, 2004, France. pp.1962-1964, 2004. <hal-00321099>
  • B Canava, A Etcheberry, J Vigneron, Jf Guillemoles, D Lincot, et al.. ELECTRIC AND CHEMICAL CHARACTERIZATIONS OF THE HETEROINTERFACES IN THE Cu (In, Ga) Se2 SOLAR CELLS. 19th European Photovoltaic Solar Energy Conference, 2004, Unknown, Unknown or Invalid Region. 2004. <hal-01276984>
  • Z Djebbour, A Dubois, Sidi Ould Saad Hamady, D Mencaraglia, B Canava, et al.. Ammonia pretreatment influence on the defect properties of Cu (In, Ga) Se/sub 2/solar cells from admittance spectroscopy. Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on, 2003, Unknown, Unknown or Invalid Region. 1, pp.388-391, 2003. <hal-01276990>

Poster7 documents

  • Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Influence of defect and polarization on efficiency of InGaN-based double-junction solar cell. Compound Semiconductor Week 2017 , May 2017, Berlin, Germany. <http://www.csw2017.org/>. <hal-01523515>
  • Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Multivariate numerical optimization of an InGaN-based hetero junction solar cell. The Euro-TMCS II: Theory, Modelling and Computational Methods for Semiconductors, Dec 2016, Cork, Ireland. 0001. <hal-01425924>
  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Simulation et Optimisation d’une cellule solaire Schottky à base d’InGaN. Séminaire de l’école doctorale EMMA, Apr 2016, Nancy, France. <hal-01338242>
  • J. Huguenin, H. Chaynes, P. Bourson, Sidi Ould Saad Hamady. Detection of natural algaecide at low concentration by SERS. 18th EuroAnalysis, Sep 2015, Bordeaux, France. 2015. <hal-01227897>
  • J. Huguenin, H. Chaynes, Sidi Ould Saad Hamady, P. Bourson. Detection of natural algaecide at low concentration by SERS. GFSV XXI, Jun 2015, Reims, France. 2015. <hal-01227893>
  • J. Huguenin, P. Bourson, S. Ould Saad Hamady, I. Durickovic. Use of Raman spectroscopy coupled to the chemometrics for measuring weak concentration in a aqueous solution. NIR / GFSV 2013, Jun 2013, La Grande Motte, France. <hal-01281395>
  • J. Huguenin, P. Bourson, S. Ould Saad Hamady, I. Durickovic. Use of Raman spectroscopy coupled to the chemometrics for measuring weak concentration in a aqueous solution. NIR / GFSV 2013, Jun 2013, La Grande Motte, France. <hal-01280739>

Ouvrage (y compris édition critique et traduction)1 document

  • S Gautier, Sidi Ould Saad Hamady, A Soltani, T Aggerstam, N Maloufi, et al.. EWMOVPE 2007, Vol. G, 261, 2007. <hal-01276978>

Pré-publication, Document de travail1 document

  • Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance. 2017. <hal-01523416>